• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.2
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• pp.53-63
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• 1993

Device degradations by the Fowler-Nordheim tunneling have been studide. The changes of device characteristics such as the threshold voltage, subthreshold slope, I-.or. curves have been measured after bidirectionally stressing n-channel MOSFET's and p-channel MOSFET's. Also the interface states have been directly measured by the charge pumping methodIt is shown that the change of interface states is determined by the number of hole carriers tunneling the gate oxide and electrons which are trapped in the gate oxide. Also, in this paper, we propose a model for device lifetime limited by the increase of interface states.

• Journal of Applied Reliability
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• v.10 no.1
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• pp.65-71
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• 2010

NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.156-161
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• 2017

This work presents a novel structure for junction-less tunneling field effect transistor (JL-TFET) with a floating gate over the source region. Introduction of floating gate instead of fixed metal gate removes the limitation of fabrication process suitability. The proposed device is based on a heavily n-type-doped Si-channel junction-less field effect transistor (JLFET). A floating gate over source region and a control-gate with optimized metal work-function over channel region is used to make device work like a tunnel field effect transistor (TFET). The proposed device has exhibited excellent ID-VGS characteristics, ION/IOFF ratio, a point subthreshold slope (SS), and average SS for optimized device parameters. Electron charge stored in floating gate, isolation oxide layer and body doping concentration are optimized. The proposed JL-TFET can be a promising candidate for switching performances.

• Journal of the Optical Society of Korea
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• v.14 no.4
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• pp.363-367
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• 2010

A new two step on-axis digital holography (DH) is proposed without any assumptions, phase shifting, or complicated optical components. A dual-channel Mach-Zehnder interferometer was employed. Using that setup, the object field can be reconstructed requiring only two step measurements. To eliminate position difference between two charge-coupled device (CCD) cameras, a matched filter algorithm was used. Experimental results are compared to those of the traditional phase shifting technique. The proposed approach can also be applied to single-exposure on-axis DH for real time measurement.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.971-973
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• 1999

채널길이에 따른 n-채널과 p-채널 poly-Si TFT's를 제작하고 그 전기적 특성을 분석하였다. n-채널과 p-채널소자는 공통적으로 기생바이폴라트 랜지스터현상(parasitic bipolar transistor action)에 의한 kink 효과, 전하공유(charge sharing)에 의한 문턱전압의 감소, 소오스와 드레인 근처의 결함에 의한 RSCE(reverse short channel effect) 효과, 수직전계에 의한 이동도의 감소, 그리고 avalanche 증식에 의한 S-swing의 감소가 나타났다. n-채널은 p-채널 보다 더 큰 kink, 이동도, S-swing의 변화가 나타났으며, 높은 드레인 전압에서의 문턱전압의 이동은 avalanche 증식(multiplication)에 의한 것이 더 우세한 것으로 나타났다. 누설전류의 경우, 채널 길이가 짧아짐에 따라 n-채널은 큰 증가를 나타냈으나 p-채널의 경우는 변화가 나타나지 않았다.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.6
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• pp.951-957
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• 1994

We present a new model for the series resistance of inverted-staggered amorphous silicon (a-Si) thin film transistors (TFT's) by employing the current spreading under the source and the drain contacts as well as the space charge limited current model. The calculated results based on our model have been in good agreements with the measured data over a wide range of applied voltage, gate-to-source and gate-to-drain overlap length, channel length, and operating temperature. Our model shows that the contribution of the series resistances to the current-voltage (I-V) characteristics of the a-Si TFT in the linear regime is more significant at low drain and high gate voltages, for short channel and small overlap length, and at low operating temperature, which have been verified successfully by the experimental measurements.

• Journal of Korea Technology Innovation Society
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• v.8 no.3
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• pp.911-931
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• 2005

This paper analyzes the demand characteristics of DMB services using survey data. According to a Logit analysis, the willingness to adopt the services is higher if the would-be user is male, is better informed with the service, is watching TV longer, and is spending more for the telecommunications services. And the survey results tell us that for the stimulation of the service, efforts should be made to increase the level of public awareness of the services. The survey response from the would-be DMB users shows that the respondents who value the nationwide coverage and the numbers of channel are more inclined to use the satellite DMB service. On the other hand, the service charge and the availability of the terrestrial broadcasting channel for the time being does not seem to influence the intention of using the terrestrial DMB service. It could be interpreted that the potential user are deciding whether to use the service more by the quality and contents of the service rather than by the cost of the service.

• Proceedings of the PSK Conference
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• 2003.10b
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• pp.233.3-234
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• 2003

Electroosmotic flux during iontophoresis originates due to the net negative charge of the current passing channel (pores) in skin at physiological pH (pH 7.4). Thus, the channel is permselective to cations, and this causes the convective solvent flow, from anode to cathode direction. This solvent flow facilitates the flux of cations (from anode), inhibits that of anions (from cathode), and enables the enhanced transport of neutral, polar solutes. In this work, we have investigated the effect of a series of polyethylene glycols (PEGs) with different molecular weights on the electroosmtic flow to get more detail understanding of this phenomena. (omitted)

• Journal of Microbiology and Biotechnology
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• v.11 no.4
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• pp.614-618
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• 2001

Low-threshold T-type $Ca^{2+}$ channels are distinctive voltage-operated gates for external $Ca^{2+}$ entry around a resting membrane potential due to their low voltage activation. These phenomena have already been extensively studied due to their relevance in diverse physiological functions. Recently, three T-type $Ca^{2+}$ channel ${\alpha}$$_1$subunits were cloned and their biophysical properties were characterized after expression in mammalian expression systems. In this study, ${\alpha_IG} and {\alpha_IH}$ low-threshold $Ca^{2+}$ channels were expressed and characterized in Xenopus oocytes after adding 5' and 3'untranslated portions of a Xenopus ${\beta}$ globin to improve their expression levels. The added portions dramatically enhanced the expression levels of the ${\alpha_IG} and {\alpha_IH}$ T-type channels. When currents were recorded in 10 mM $Ba^{2+}$ as the charge carrier, the activation thresholds were about -60 mV, peak currents appeared at -20 mV, and the reversal potentials were between +40 and +45. The activation time constants were very similar to each other, while the inactivation time constants of the ${\alpha_IG}$ currents were smaller than those of ${\alpha_IH}$. Taken together, the electrophysiological properties of the ${\alpha_IG} and {\alpha_IH}$ channels expressed in Xenopus oocytes were similar to the previously reported characteristics of low-threshold $Ca^{2+}$ channel currents.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.