• Korean Journal of Materials Research
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• v.12 no.7
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• pp.587-590
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• 2002

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$ , and the spin orbit splitting, $\Delta_{so}$ , have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.d.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.714-721
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• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.107-112
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• 2010

The Cu$(In_{1-x}Ga_x)Se_2$ is the absorber material for thin film solar cell with high absorption coefficient of $1{\times}10^5cm^{-1}$. In the case of CIGS, the movable energy band gap from $CuInSe_2$ (1.00 eV) to $CuGaSe_2$ (1.68 eV) can be acquired while controlling Ga contain ratio. Generally, the co-evaporator method have used for development and fabrication of the CIGS absorption layer. However, this method should need many steps and lengthy deposition time with high temperature. For these reasons, in this paper, a new growth method of CIGS layer was attempted to hydride vapor transport (HVT) method. The CIGS mixed-source material reacted for HCl gas in the source zone was deposited on the substrate after transporting to growth zone. c-plane $Al_2O_3$ and undoped GaN were used as substrates for growth. The characteristics of grown samples were measured from SEM and EDS.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.661-668
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• 2010

Cu(In,Ga)$Se_2$(CIGS) photovoltaic thin films were electrodeposited on Mo/glass substrates with an aqueous solution containing 2 mM $CuCl_2$, 8 mM $InCl_3$, 20 mM $GaCl_3$ and 8mM $H_2SeO_3$ at the electrodeposition potential of -0.6 to -1.0 V(SCE) and pH of 1.8. The best chemical composition of $Cu_{1.05}In_{0.8}Ga_{0.13}Se_2$ was found to be achieved at -0.7 V(SCE). The precursor Cu-In-Ga-Se films were annealed for crystallization to chalcopyrite structure at temperatures of 100-$500^{\circ}C$ under Ar gas atmosphere. The chemical compositions, microstructures, surface morphologies, and crystallographic structures of the annealed films were analyzed by EPMA, FE-SEM, AFM, and XRD, respectively. The precursor Cu-In-Ga-Se grains were grown sparsely on the Mo-back contact and also had very rough surfaces. However, after annealing treatment beginning at $200^{\circ}C$, the empty spaces between grains were removed and the grains showed well developed columnar shapes with smooth surfaces. The precursor Cu-In-Ga-Se films were also annealed at the temperature of $500^{\circ}C$ for 60 min under Se gas atmosphere to suppress the Se volatilization. The Se amount on the CIGS film after selenization annealing increased above the Se amount of the electrodeposited state and the $MoSe_2$ phase occurred, resulting from the diffusion of Se through the CIGS film and interaction with Mo back electrode. However, the selenization-annealed films showed higher crystallinity values than did the films annealed under Ar atmosphere with a chemical composition closer to that of the electrodeposited state.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.1-6
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• 2013

In this paper, to develop linear source for evaporating $600{\times}1,200mm$ size of large area CIGS absorber layer, we simulated linear thermal source and obtained ${\pm}5%$ thickness uniformity with various nozzle sizes and regular nozzle distance. Flux density was confirmed linear source length. Using this linear source, we tested thickness uniformity of Copper, Indium single layer which was obtained Cu ${\pm}5%$ and In ${\pm}5%$ thickness uniformity. And then CIGS absorber layers were evaporated with In-line single-stage co-evaporation. Large area CIGS absorber layers were confirmed composition uniformity of $$Cu{\leq_-}5%$$, $$In{\leq_-}7%$$, $$Ga{\leq_-}4%$$, $$Se{\leq_-}3%$$ with 600 mm width by XRF. Uniform shape of CIGS absorber layers was confirmed by SEM. XRD showed peaks which indicate chalcopyrite structure of CIGS absorber layers. Thus, developed linear source is suitable for evaporating CIGS absorber layer.

• Journal of the Korean Electrochemical Society
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• v.13 no.2
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• pp.89-95
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• 2010

The chalcopyrite $Cu(In_xGa_{(1-x)})Se_2$ (CIGS) is considered to be one of the effective light-absorbing materials for thin film photovoltaic solar cells. We describe the electrodeposition of CIGS thin films in ambient laboratory conditions, and suggest the electrochemical conditions to prepare stoichiometric CIGS thin films of Ga/(In + Ga) = 0.3. In acidic solutions containing $Cu^{2+}$, $In^{3+}$, $Ga^{3+}$ and $Se^{4+}$ ions, the CIGS films of different Cu/In/Ga/Se chemical compositions were electrodeposited onto Mo/Glass substrate. The structure, morphology and chemical composition of electrodeposited CIGS films were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), and Energy dispersive X-ray spectroscopy (EDS), respectively.

• Korean Journal of Mineralogy and Petrology
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• v.34 no.1
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• pp.57-67
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• 2021

The geology of the Iskaycruz project are mainly composed of sedimentary rocks within Cretaceous basin. The basal part is composed up of dark-gray shale, gray sandstone, and clastic rock of Oyon formation interbedded with coal measures. In the folded zone in the eastern part of the survey area, there is Chimu formation that has medium-grained massive and white quarztite. In terms of geological structure, the Iskaykruz region is located in the folded and overthrust zones of the central part of the Occidental Mountains. Ore body was formed by hydrothermal replacement process and consists of zinc, lead, silver, and copper. Stratabound-type deposits are hosted in limestone of Santa formation. It extends 12 kilometers discontinuously from northern Canaypata to southern Antapampa. Irregular iron oxide and sulfide minerals hosted in Santa and Parihuanca formations are observed. The mineralization observed on the surface consist of primary sulfides consisting of sphalerite with galena and chalcopyrite, and iron and manganese oxide produced from oxidation of primary sulfides. Skarn minerals are accompanied by tremolite, garnet, epidote and quartz.

• Economic and Environmental Geology
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• v.48 no.2
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• pp.103-114
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• 2015

Jinsan gold deposit is a hydrothermal vein type deposit consisting of several fissure filling quartz veins developed within the Changri Formation of the Ogcheon Supergroup in Geumsan, Chungnam. This study is to provide an efficient exploration and development strategies based on the characteristics of the geology, geological structure, core logging, and ore vein occurrence and grade for the four pits (New pit, Main pit, Yanghapan pit and Teugho pit). Quartz veins are mostly developed with the strike of $N10^{\circ}-25^{\circ}W$ and $N5^{\circ}-20^{\circ}E$, and the thickness is in the range of 0.1~0.5 m, sometimes extending to over 1m. Although the quartz veins commonly form massive shape, they sometimes show zonal structure, comb structure as well as brecciated texture. Major ore minerals are pyrite and chalcopyrite, and pyrrhotite, sphalerite, galena, marcasite, electrum and chalcocite are also accompanied as minor phases. Gray and milky white quartz veins, which are occasionally crosscut by calcite vein, also include fluorite. Ore evaluations for the 22 samples revealed that the samples from the pits generally have very low Au contents, lower than 1 g/t, but some clay samples of drilled core show very high Au concentrations, up to 141 g/t, indicating that Au content is much higher within fault gouges rather than within fresh quartz veins. This may represent that gold might have been reworked and reprecipitated by hydrothermal fluids in association with reactivation of the faults, and thus suggest that ore occurrence in this deposit is very complex and irregular and therefore more precise and systematic exploration is required.

• Economic and Environmental Geology
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• v.43 no.2
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• pp.73-84
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• 2010

Gold and silver deposits within the Eunjeok and Sangeun mines are located in Yeongam district, Cheollanamdo-province. They are composed of vein ore bodies infilling the fractures of Cretaceous rhyolitic tuff. The Eunjeok mine have three gold and silver bearing hydrothermal veins which is infilling the fracture of rhyolitic tuff. Major ore minerals within the Eunjeok and Sangeun mines are arsenopyrite, pyrite, chalcopyrite, sphalerite and galena and minor ores are electrum, native silver and argentite. Sericitization is dominant in alteration zone and chloritization and dickitization is minor. Quartz veins in the Eunjeok and Sangeun mine have the similar paragenesis and vein textures such like breccia, crustiform, comb and vuggy morphology indicating the formation of typical epithermal environment. In order to carry out the preliminary feasibility study of mine according to the commodity and elucidate the occurrence features of mineral resources from Eunjeok and Sangeun mine, common commodity (Pb, Zn, Cu, Fe, Mo, W, Au and U), and industrial commodity (In, Re, Ga, Ge, Se, Te, Y, Eu and Sm) for 17 ore specimen were analyzed. It is tentatively thought that there is no exploitable mine for iron, lead, zinc, copper, tungsten and uranium based on the preliminary result. If the reserves are secured through the detailed prospecting in case of molybdenum and silver, it is tentatively thought that there will be exploitable deposits depending on international metal price. If we assume the vein width from 0.25 m to 2 m including alteration zone with the gold grade of 80g/t, it is inferred that the resources amount of the Eunjeok-Sangeun mines range from 6.5 to 65ton. However, as the vein structure of the Eunjeok and Sangeun mines is developed together with alteration zone, it should be estimated to include potential alteration zone in order to yield the average grade. It is needed to carry out more exploration in the near future because the reserves can be flexibly estimated according to the change of average grade considering the alteration zone.

• Journal of the Mineralogical Society of Korea
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• v.31 no.4
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• pp.307-323
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• 2018

The Inseong Au-Ag and base metal deposit, located in Chungchengbuk-do, Korea, consists of series of quartz veins filling fissures. The deposit occurs in Hwanggangri meta-sediment formation, a lime pebble-bearing phyllite, in the Okcheon Supergroup. Abundant ore minerals in the deposit are pyrite, arsenopyrite, sphalerite, chalcopyrite and galena. The gangue minerals are quartz, calcite and chlorite. Hydrothermal alteration such as chlorization, silicitication, sericitization and carbonitization can be observed around the quartz veins. 4 vein stages can be distinguished based on its paragenetic sequence, vein structure, alteration features and ore minerals. Microthermometry of the fluid inclusion assemblages occur in the veins are conducted to reconstruct a hydrothermal P-T evolution. Fluid inclusions in clean and barren quartz vein in stage 1 have Th of $270{\sim}342^{\circ}C$ and salinity of 1.7~6.4 (NaCl eqiv.) wt%. Euhedral quartz crystal in stage 2 have Th of $108{\sim}350^{\circ}C$ and salinity of 0.5~7.5 wt%. Barren milky quartz vein in stage 3 have Th of $174{\sim}380^{\circ}C$ and salinity of 0.8~7.5 wt%. Calcite vein in stage 4 have Th of $103{\sim}265^{\circ}C$ and salinity of 0.7~6.4 wt%. Calculated paleodepth about 0.5~1.5 km (hydrostatic pressure) indicate epithermal ore-forming condition. Shallow depth but relatively high-T hydrothermal fluids possibly create a steep geothermal gradient, sufficient for base metal precipitation in the Inseong deposit.