• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.2113_2114
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• 2009

Chalcopyrite based sollar cells have received much attention because of their tunable electronic and optical properties. As a typical ternary chalcopyrite material, $CuInS_2$ has been considered as one of the most popular and promising candidates as absorber materials for photovoltaic applications because of its high absorption coefficient and environmental consideration. In this study, $CuInS_2$ powders have been synthesized using polyol process of a mixture of copper nitrate, indium nitrate, and thiourea with various stoichiometric molar ratios in ethylene glycol at $196^{\circ}C$. As boiling time goes by, the color of metal ion mixed solutions were changed transparent green to dark green and finally turned to black by reduction of OH- radicals. The prepared powders were fully characterized using SEM, XRD. The particle shape of black colored powders showed sphere with about 50 nm in particle size compared to those with dark green colored powders showed irregular shape with about $1{\mu}m$ in particle size. The XRD results showed highly crystallized $CuInS_2$.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1587-1589
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• 2002

Photovoltaics is considered as one of the most promising new energy technology, because its energy source is omni present, pollution-free and inexhaustive. It is agreed that these solar cells must be thin film type because thin film process is cost-efficive in the fact that it uses much less raw materials and can be continuous. The defect chalcopyrite material $CuIn_3Se_5$ has been identified as playing an essential role in efficient photovoltaic action in $CuInSe_2$-based devicesm It has been reported to be of n-type conductivity, forming a p-n junction with its p-type counterpart CuInSe2. Because the most efficient cells consist of the $Cu(In,Ga)Se_2$ quarternary, knowledge of some physical properties of the Ga-containing defect chalcopyrite $Cu(In,Ga)_3Se_5$ may help us better understand the junction phenomena in such devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.376-376
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• 2011

I-III-VI2 chalcopyrite compounds, particularly copper, indium, gallium selenide(Cu(InxGa1-x)Se2, CIGS), are effective light-absorbing materials in thin-film solar application. They are direct band-gap semiconductors with correspondingly high optical absorption coefficients. Also they are stable under long-term excitation. CIS (CIGS) solar cell reached conversion efficiencies as high as 19.5%. Several methods to prepare CIS (CIGS) absorber films have been reported, such as co-evaporation, sputtering, selenization, and electrodeposition. Until now, co-evaporation is the most successful technique for the preparation of CIS (CIGS) in terms of solar efficiency, but it seems difficult to scale up. CIS solar cells have been hindered by high costs associated with a fabrication process. Therefore, inorganic colloidal ink suitable for a scalable coating process could be a key step in the development of low-cost solar cells. Here, we will present the preparation of CIS photo absorption layer by a solution process using novel metal precursors. Chalcopyrite copper indium diselenide (CuInSe2) nanocrystals ranging from 5 to 20nm in diameter were synthesized by arrested precipitation in solution. For the fabrication of CIS photo absorption layer, the CuInSe2 colloidal ink was prepared by dispersing in organic solvent and used to drop-casting on molybdenum substrate. We have characterized the nanoparticless and CIS layer by XRD, SEM, TEM, and ICP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.969-974
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• 2003

HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.47-52
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• 2004

$HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.12-17
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• 2021

The electronic and magnetic properties for Mn-adsorbed on the chalcopyrite (CH) AlGaP2 semiconductor are investigated by using first-principles FPLMTO method. The clean CH-AlGaP2 without adsorbed Mn is a p-type semiconductor with a direct band-gap. The Mn-adsorbed CH-AlGaP2 exhibits the ferromagnetic state. It is more energetically stable than the other magnetic ones. The interstitial site on P-terminated surface is more energetically favorable one than the Al/Ga-terminated surface, or the other adsorbing sites. In the case of Mn-adsorbed Al/Ga-terminated surface, it is induced a strong coupling between Mn-3d and neighboring P-3p electrons. The holes of partially unoccupied minority Mn-3d state and majority (or minority) Al-3p or P-3p state are induced. Thus a high magnetic moment of Mn is sustained by holes-mediated double-exchange coupling. It is noticeable that the semiconducting and half-metallic characteristics of CH-AlGaP2:Mn thin film is disappeared.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.125-129
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• 2021

We investigated the electronic property and atomic structure for chalcopyrite (CH) Al_xGa_1-xAs semiconductor by using first-principles FPLMTO method. The CH-Al_xGa_1-xAs exhibits a p-type semiconductor with a direct band-gap. For low Al concentration unoccupied hole-carriers are induced, but for high Al concentration it is formed a localized bonding or anti-bonding state below Fermi level. The hybridization of Al(3s)-Ga(4s, or 4p) is larger than that of Al(3s)-As(4s, or 4p). And the Al film on As-terminated surface, Al/AsGa(001), is more energetically favorable one than that on Ga-terminated (001) surface. Consequently, the band-gap of CH-Al_xGa_1-xAs system increases exponentially with increasing Al concentration. The change of lattice parameter is shown two different configurations with increasing Al concentration. The calculated lattice parameters for CH-Al_xGa_1-xAs system are compared to the experimental ones of zinc-blend GaAs and AlAs.

• Journal of the Mineralogical Society of Korea
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• v.28 no.1
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• pp.17-28
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• 2015

In order to study the mineralogical and chemical characteristics of copper slag, optical microscopy, SEM/EDS, EPMA, AAS and XRD analyses were carried out. In addition, sulfuric acid leaching experiments were performed to investigate the potential of the slag as a copper resource. It was confirmed that fayalite, chromite, bornite and chalcopyrite were contained in the slag. The slag mainly consisted of acicular fayalite and skeletal lath -euhedral chromite crystals. Also a very large amount of bornite and chalcopyrite grains were contained in the slag. The content of Fe and Cu in the slag was 18.37% and 0.93%, respectively. As a result of sulfuric acid leaching experiments, the leaching rates of Cu and Fe were increased through decreasing the slag particle size, increasing the sulfuric acid concentration and the leaching temperature. The maximum efficiency of Cu and Fe leaching were obtained under the conditions of particle size of 32 mesh, sulfuric acid concentration of 2.0 M, and leaching temperature of $60^{\circ}C$. Accordingly, it is expected that the slag could be available as a potential and alternative resource of metallic copper.

• Economic and Environmental Geology
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• v.26 no.2
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• pp.145-154
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• 1993

Gold-silver deposits in the Kwangyang-Seungju area are emplaced along $N4^{\circ}{\sim}10^{\circ}W$ to $N40^{\circ}{\sim}60^{\circ}W$ trending fissures and fault in Pre-cambrian Jirisan gneiss complex or Cretaceous diorite. Mineral constituents of the ore from above deposits are composed mainly of pyrite, arsenopyrite, pyrrhotite, magnetite, sphalerite, chalcopyrite, galena and minor amount of electrum, tetrahedrite, miargyrite, stannite, covellite and goethite. The gangue minerals are predominantly quartz and calcite. Gold minerals consist mostly of electrum with a 56.19~79.24 wt% Au and closely associated with pyrite, chalcopyrite, miargyrite and galena. K-Ar analysis of the altered sericite from the Beonjeong mine yielded a date of $94.2{\pm}2.4\;Ma$ (Lee, 1992). This indicates a likely genetic tie between ore mineralization and intrusion of the middle Cretaceous diorite ($108{\pm}4\;Ma$). The ${\delta}^{34}S$ values ranged from +1.0 to 8.3‰ with an average of +4.4‰ suggest that the sulfur in the sulfides may be magmatic origin. The temperatures of mineralization by the sulfur isotopic composition with coexisting pyrite-galena and pyrite-chalcopyrite from Beonjeong and Jeungheung mines were $343^{\circ}C$ and $375^{\circ}C$ respectively. This temperature is in reasonable agreement with the homogenization temperature of primary fluid inclusion quartz ($330^{\circ}C$ to $390^{\circ}C$; Park.1989). Four samples of quartz from ore veins have ${\delta}^{18}O$ values of +6.9~+10.6‰ (mean=8.9‰) and three whole rock samples have ${\delta}^{18}O$ values of +7.4~+10.2‰ with an average of 7.4‰. These values are similar with those of the Cretaceous Bulgugsa granite in South Korea (mean=8.3‰; Kim et al. 1991). The calculated ${\delta}^{18}O_{water}$ in the ore-forming fluid using fractionation factors of Bulgugsa et al. (1973) range from -1.3 to -2.3‰. These values suggest that the fluid was dominated by progressive meteoric water inundation through mineralization.

• Resources Recycling
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• v.25 no.5
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• pp.36-43
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• 2016

The leaching behaviors of copper from chalcopyrite were investigated by sulfuric acid. The leaching of copper was examined according to concentration of sulfuric acid, leaching temperature and addition of hydrogen peroxide and ethylene glycol. The concentrations sulfuric acid and hydrogen peroxide in the leaching solution were increased, the leaching efficiencies of Cu were increased. At $30 -60^{\circ}C$, the leaching efficiency of Cu was increased but it was decreased at $70 - 80^{\circ}C$. The results were due to the increasing of hydrogen peroxide decomposition in the solution above $70^{\circ}C$. In the case of ethylene glycol added at $80^{\circ}C$, the decomposition of hydrogen peroxide was decreased and the leaching efficiency was increased. As a result of SEM analysis of leaching residue after leaching, the residue was found to porous form in the case of the ethylene glycol added and then the leaching efficiency of Cu was increased by the increase of surface area under $60^{\circ}C$ with ethylene glycol.