• 제목/요약/키워드: Chalcogenide memory

검색결과 70건 처리시간 0.032초

비정질칼코게나이드반도체를 이용한 기억소자의 스위칭전압에 관한 연구 (A Study on the Switching Voltage of Memory Device using Amorphous Chalcogenide Semiconductor)

  • 박창엽;정홍배
    • 대한전자공학회논문지
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    • 제14권2호
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    • pp.10-16
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    • 1977
  • Ge-Si-Te 비정질기억소자에서 기억스위칭을 여러가지 소자의 두께와 온도에 의해 변화되는 량으로 관찰하였다. 주어진 두께에서 문턱전압의 분포는 진성스위칭동작기구에 기여하는 강한 피크를 이루었다. 두께와 Vth의 좌표계에서 두께가 감소하면 문턱전압은 낮아지며 스위칭전계는 증가함을 보였다. 또한 문턱전압은 온도가 증가함에 따라 낮아짐을 알수있었으므로 Tg이하의 온도범위에서는 문턱전안을 낮출수있다는 사실을 보였다.

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메모리 응용을 위한 비정질 Ge-Se 재료의 전해질 메카니즘 연구 (Electrolyte Mechanizm Study of Amorphous Ge-Se Materials for Memory Application)

  • 남기현;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.67-68
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    • 2009
  • In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

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비정질 칼코게나이드 재료를 이용한 PMC소자 제작 (The PMC fabrication using the amorphous chalcogenide materials)

  • 정홍배;허정화;손정우;박인애;조동환;김성진;남기현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1262_1263
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    • 2009
  • Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. In this study, we investigate the nature of thin films formed by photo doping of Ag ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

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Ge-Se-Te Chalcogenide 물질의 열적, 전기적 특성에 관한 연구 (A study for thermal and electrical properties of Ge-Se-Te Chalcogenide materials)

  • 남기현;박형관;김재훈;구상모;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.33-34
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    • 2008
  • $Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were prepared by e-beam evaporator system and thermal evaporator technique. The thermal properties were investigated in the temperature range 300K-400K and the electrical properties were studied in the voltage range from 0V to 3V below the corresponding glass trasition temperature. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

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The Study on the Characteristic of Phase Transition in Differential Thickness of Se1Sb2Se2 Thin Films

  • Lee Jae-Min;Yang Sung-Jun;Shin Kyung;Chung Hong-Bay
    • Transactions on Electrical and Electronic Materials
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    • 제5권6호
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    • pp.241-243
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    • 2004
  • The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can be controlled by electrical or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. In this letter, the characteristics of phase transition in differential chalcogenide thin film are investigated. Al was used for the electrode as the thickness of 100, 300, 500 nm, respectively.

The Study of Phase-change with Temperature and Electric field in Chalcogenide Thin Film

  • Yang, Sung-Jun;Shin, Kyung;Park, Jung-Il;Lee, Ki-Nam;Chung, Hong-Bay
    • Transactions on Electrical and Electronic Materials
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    • 제4권5호
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    • pp.24-27
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    • 2003
  • We have been investigated phase-change with temperature and electric field in chalcogenide Ge$_2$Sb$_2$Te$\sub$5/ thin film. T$\sub$c/(crystallization temperature) is confirmed by measuring the resistance with the varying temperature on the hotplate. We have measured I-V characteristics with Ge$_2$Sb$_2$Te$\sub$5/ chalcogenide thin film. It is compared with I-V characteristics after impress the variable pulse. The pulse has variable height and duration.

Programmable Metallization Cell에서 칼코게나이드 물질의 열처리에 따른 특성 (Properties on Annealing of Chalcogenide Materials at Programmable Metallization Cell)

  • 최혁;김현구;남기현;구용운;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.164-164
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    • 2007
  • Photodiffusion of silver into chalcogenide thin film is one of the most interesting effects that occurs in chalcogenide glass as it theatrically changes the properties of the initial material and forms a ternary. Programmable Metallization Cell(PMC) Randon Access Memory use for photodiffusion of mobile metal is based on the electrochemical growth and removal of nanoscale metallic pathway in thin film of solid electrolyte. This paper investigates the annling properties on Ag-doped $Ge_{25}Se_{75}$ thin film structure and describes the electrical characteristics of PMC-RAM. The composition of the intercalation products containing Ag is confirmed using X-ray diffraction which shows the formation of Ag-doped $Ge_{25}Se_{75}$.

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칼코게나이드 박막의 전기적 펄스에 의한 상변화 연구 (The phase transition with electric field in chalcogenide thin films)

  • 양성준;신경;이재민;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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    • pp.115-118
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    • 2004
  • The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semoconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline stale are assigned to binary states. AST(AsSbTe) used to phase change material by applying electical pulses. Thickness of AST chalcogenide thin film have about 100nm. Electrodes are made of ITO and Al. $T_c$(Crystallization temperature) of AST system is lower than that of the GST(GeSbTe) system, so that the current pulse width of crystallization process can be decreased.

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상변화 메모리 응용을 위한 ${Ge_1}{Se_1}{Te_2}$ 비정질 칼코게나이드 박막의 전도 록성 (Conductivity Characteristics of ${Ge_1}{Se_1}{Te_2}$ Amorphous Chalcogenide Thin Film for the Phase-Change Memory Application)

  • 최혁;김현구;조원주;정홍배
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.32-33
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    • 2006
  • As next generation nonvolatile memory, chalcogenide-based phase change memory can substitute for a conventional flash memory from its high performance. Also, fast writing speed, low writing voltage, high sensing margin, low power consumption and repetition reliability over $10^{15}$ cycle shows its possibility. At our laboratory, we invented ${Ge_1}{Se_1}{Te_2}$ material to alternate with conventional ${Ge_2}{Sb_2}{Te_5}$ for improve its ability. We respect the ${Ge_1}{Se_1}{Te_2}$ material can be a solution for high power consumption problem and long time at 'set' performance. A conductivity experiment from variable temperature was performed to see reliability of repetition at read and write performance. Compare with conventional ${Ge_2}{Sb_2}{Te_5}$ material, these two materials are used as complex compound to get the finest parameter.

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비정질 $Ge_2Sb_2Te_5$ 박막의 물리적 성질 및 스위칭 특성 (The physical properties and switching characteristics of amorphous $Ge_2Sb_2Te_5$ thin film)

  • 이재민;양성준;신경;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.268-271
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    • 2004
  • The phase transition from amorphous to crystalline states, and vice versa, of $Ge_2Sb_2Te_5$ films by applying electrical pulses have been studied. This material can be used as nonvolatile memory. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

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