• Journal of the Korean Ceramic Society
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• v.11 no.3
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• pp.19-26
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• 1974

Mechanical properties of the system PbO-B2O3-V2O5 low melting glass during crystallization by heat-treatment were investigated. Wettability of the system PbO-B2O3-V2O5 was excellent and appropriate for commercial sealing as a low melting solder glass. Crystals, during heat-treated at 30$0^{\circ}C$ of the system PbO-B2O3-V2O5 were $\beta$-4PbO.B2O3, 5PbO.4B2O3, and Pb2V2O7 mainly. The percent of crystallinity was 82$\pm$5%. Mechanical properties of the system PbO-B2O3-V2O5 were influenced not only by the differences of density and coefficient of thermal expansion and the stress induced from the difference in the density and coefficient of thermal expansion between glass phase and crystals but also crystallization conditions.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.70-78
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• 1983

This paper discusses the application of Si-Borosilicate glass sealing to a new sealing method which utilizes a large electrostatic field to pormote bound formation at relatively low temperature. Bonding mechanism and the effect of bonding time bonding temperature glass thickness and surface roughness on the bond strength were investigated. Application of a de voltage across bonded specimen gradually produced a layer of glass adjacent silicon which was depleted of mobile ions. As a consequence a n increasingly larger fraction of the applied voltage appeared across the depleted region and very large electric field resulted This field accompanyed by large electrostatic force acted as driving force the of strong bond. And stronger bond was formed with increasing bonding time and temperature. A low temperature preoxidation is advantageous for the Si surface having a rougher surface finish that 1 microinch.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.79-83
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• 2009

The glass-ceramic of the $Li_{2}O-Al_{2}O_{3}-SiO_{2}$ system was investigated to develop the low thermal expansion materials. The glass of this system was heat treated at $775^{\circ}C$ for 2 h for nucleation and subsequently at $825{\sim}900^{\circ}C$ for 2 h for crystallization. The crystal structure of the glass-ceramic of this system was a single phase of $\beta$-quartz solid solution($Li_{x}Al_{x}Si_{1-x}O_{2}$). The thermal expansion of the glass-ceramic showed $4.40{\times}10^{-7}{\sim}1.33{\times}10^{-6}K^{-1}$ between $25{\sim}300^{\circ}C$ and $1.56{\times}10^{-6}{\sim}2.53{\times}10^{-6}K^{-1}$ between $25{\sim}800^{\circ}C$, higher than lower temperature range. The mechanical strength remained almost same at around high 110 MPa with heating temperature changes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.246-254
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• 2013

Translucent opal glass was fabricated in order to substitute polycarbonate diffuser of LED lighting for the purpose of improving the durability problem. Calcium phosphate was used for the opacifier of opal glass and melted at $1550^{\circ}C$ for 2 hrs in electric furnace. Because opal glass was made by phase separation and growth of opacifier grains during cooling procedure after forming of melted glass, we identified the effect of opaque properties by the change of forming and cooling temperature, as R.T. (room temperature), $850^{\circ}C$, $1100^{\circ}C$ and $1200^{\circ}C$. As the results, it had excellent optical properties for the diffuser of LED lighting in the fabricated sample of forming and cooling at $1200^{\circ}C$, with no dazzling from direct light by high haze value over 82 % and low parallel transmittance value under 10 %. For the thermal properties, it had expressed thermal expansion coefficient of $6.352{\times}10^{-6}/^{\circ}C$ and softening point of $839^{\circ}C$.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.140.2-140
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• 2003

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.151-156
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• 1995

Low temperature firing $(Ba, Sr)TiO_{3}$ dielectrics were successfully prepared with lead based glass and those electrical properties were investigated. Different amount of PbO content glass materials were added to dielectrics to investigate the sinterability and its dielectric properties. Also, various compositions of ceramic capacitors were prepared to applicate in multilayer ceramic capacitors. A large amount of experiment has been done with various Pb contented glasses and different sintering temperatures. The sintering temperature of $(Ba,Sr)TiO_{3}$can be reduced from $1350^{\circ}C$to as low as $1050^{\circ}C$ with 4wt% addition of $PbO-ZnO-B_{2}O_{2}$ glass materials. Its dielectric constant at room temperature was up to 8100 with low dielectric loss, 0.005. This ceramic capacitor showed fully fired microstructures with its grain size of 1-3$\mu \textrm{m}$. The sintered body which was sintered at $1150^{\circ}C$ for 2hr with 4wt% $PbO-ZnO-B_{2}O_{2}$ glass material addition satisfied the Z5U specification of the EIAS.

• Journal of the Korean Ceramic Society
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• v.44 no.10
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• pp.548-553
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• 2007

Ceramic green sheets consisting Bi-based glass frit were fabricated for an application to PDP transparent dielectric front panel. The dispersion condition of the slurry for tape casting was pre-examined, and two kinds of hinder and plasticizer were used in the non-aqueous slurry system. In the fabrication process for the frit film, the properties such as dry and firing shrinkage, elongation, and transmittance were examined at the condition of various mixing ratio of plasticizers. In the mixing ratio of polyethylene glycol to dibutyl phthalate of 3:5wt%, a good adhesion, elongation and transmittance were observed at the firing temperature of $580^{\circ}C$. The photograph for the cross section of the interface was also showed a dense microstructure.

• Journal of the Korean Ceramic Society
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• v.36 no.5
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• pp.490-496
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• 1999

The sintering behavior of LTCC (low temperature cofired ceramics) chip couplers was investigated in relation with Ag diffusion at the interface of glass ceramic substrate-Ag electrode. Sintering temperature was in the range of 825$^{\circ}C$-975$^{\circ}C$. The commercial green sheet and silver electrode were used. Below 875$^{\circ}C$ the diffusion of the Ag ion into the substrate and the penetration of glassy phases into the electrode occurred due to an increase of fluidity. Thus the lectrode line was severely deformed and damaged. At 975$^{\circ}C$ the transformation of crystalline phases into glassy phases and the melting of the Ag electrode resulted in the diffusion of the considerable amount of Ag ions.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.601-607
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• 1995

The bond strength between the low-firing-substrate and Cu conductor depended on the softening point and the amount of frit added to the metal paste. The addition of 3 wt% frit (softening point: 68$0^{\circ}C$) to the metal paste resulted in the improvement of bond strength, which was approximately 3 times higher (3kg/$\textrm{mm}^2$) than that of non frit condition. It was also found that fracture surface shifted to the ceramic substrate in the interface region. These phenomena were attributed to the frit migration into the metal-ceramic interface. It was thought that the migration of glass frit occurred extensively when the softening point of glass firt was 68$0^{\circ}C$. The sheet resistance of Cu conductor remained constant by the addition of 4 wt% frit regardless of softening point of frit. For all samples with more than 4 wt% frit, the sheet resistance increased abruptly.

• Proceedings of the Korean Ceranic Society Conference
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• 2004.10a
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• pp.94.2-94.2
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• 2004