• Korean Journal of Materials Research
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• v.22 no.2
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• pp.86-90
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• 2012

Insoluble catalytic electrodes were fabricated by RF magnetron sputtering of Pt on Ti substrates and the performance of seawater electrolysis was compared in these electrodes to that is DSA electrodes. The Pt-sputtered insoluble catalytic electrodes were nearly 150 nm-thick with a roughness of $0.18{\mu}m$, which is 1/660 and 1/12 of these values for the DSA (dimensionally stable anodes) electrodes. The seawater electrolysis performance levels were determined through measurements of the NaOCl concentration, which was the main reaction product after electrolysis using artificial seawater. The NaOCl concentration after 2 h of electrolysis with artificial seawater, which has 3.5% NaCl normally, at current densities of 50, 80 and 140 mA/$cm^2$ were 0.76%, 1.06%, and 2.03%, respectively. A higher current density applied through the electrodes led to higher electrolysis efficiency. The efficiency reached nearly 58% in the Pt-sputtered samples after 2 h of electrolysis. The reaction efficiency of DSA showed higher values than that of the Pt-sputtered insoluble catalytic electrodes. One plausible reason for this is the higher specific surface area of the DSA electrodes; the surface cracks of the DSAs resulted in a higher specific surface area and higher reaction sites. Upon the electrolysis process, some Mg- and Ca-hydroxides, which were minor components in the artificial seawater, were deposited onto the surface of the electrodes, resulting in an increase in the electrical resistances of the electrodes. However, the extent of the increase ranged from 4% to 7% within an electrolysis time of 720 h.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.988-993
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• 2002

Electrochemical cells for decomposing $NO_x$ were fabricated using a hydrothermally synthesized lanthanum stannate pyrochlore catalyst. Thick film of the catalyst on the YSZ electrolyte disk was produced by screen-printing a paste consisted of $La_2Sn_2O_7$ and YSZ powders. Direct current was applied to the electrochemical cell to promote an electrochemical catalytic decomposition of $NO_x$. $NO_x$ decomposition behavior of the rectant gas mixture ($NO_x$ 0.1%, $O_2$ 2%) was investigated at 700${\circ}C$ under atmosphere pressure using on-line gas chromatography and $NO_x$ analyzer. It was observed that microstructure of the catalyst layer significantly influences the electrocatalystic decomposition of $NO_x$.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.377-385
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• 2002

The possibility of $ZrO_2$ thin film as insulator for Metal-Ferroelectric-Insulator-Semiconductor(MFIS) structure was investgated. $SrBi_2Ta_2O_9$ and $SrBi_2Ta_2O_9$(SBT) thin films were deposited on P-type Si(111) wafer by R. F. magnetron sputtering method. The electrical properties of MFIS gate were relatively improved by inserting the $ZrO_2$ buffer layer. The window memory increased from 0.5 to 2.2V in the applied gate voltage range of 3-9V when the thickness of SBT film increased from 160 to 220nm with 20nm thick $ZrO_2$. The maximum value of window memory is 2.2V in Pt/SBT(160nm)/$ZrO_2$(20nm)/Si structure with the optimum thickness of $ZrO_2$. These memory windows are sufficient for practical application of NDRO-FRAM operating at low voltage.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.202-208
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• 1997

Bi-layered SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si sibstrates by rf magnetron sputt-ering at room temperature and then were annealed at 75$0^{\circ}C$, 80$0^{\circ}C$ and 85$0^{\circ}C$ for 1 hour in oxygen at-mosphere. The film composition of SrBi2Ta2O9 was obtained after depositing at room temperature and annealing at 80$0^{\circ}C$. Excess 20mole% Bi2O3 and 30 mole% SrCO3 were added to the target to compensate for the lack of Bi and Sr in SBT film. 200 nm thick SBT film exhibited and dense microstructure, adielectric constant of 210, and a dissipation factor of 0.05 at 1 MHz frequency. The films exhibited Curie temperature of 32$0^{\circ}C$ and a dielectric constant of 314 at that temperature under 100 kHz frequency. The remanent polarization(2Pr) and the coercive field(2Ec) of the SBT films were 9.1 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm at an applied voltage of 3V, resspectively and the SBT film showed a fatigue-free characteristics up to 1010 cy-cles under 5V bipolar pulse. The leakage current density of the SBT film was about 7$\times$10-7A/$\textrm{cm}^2$ at 150 kV/cm. Fatigue-free SBT films prepared by rf magnetron sputtering can be suitable for application to non-volatile memory device.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.9
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• pp.826-834
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• 2004

In this paper, we fabricated thick film monopole antennas using Bi$_2$O$_3$-doped BaTi$_4$$O_{9}$ ceramics for small size and broadband intenna. In the result, the high permittivity was fixed and the quality factor was also significantly decreased by the formation of secondary phase of Bi$_4$Ti$_3$O$_{12}$ repleced by addtion Bi. The antenna property influenced by the quality value more than the permittivity. The bandwidth of antenna was increased to 33 %. On the other hand, the gain was reduced to -4.3 dBi. Also radiation patterns were showed low dBi value by increasing of dielectric loss. Specially, Measured x-y plane radiation patterns was distorted as the dispersion of wavelength and high permittivity difference. But the result is showed execellent bandwidth because of low quality value in all formation range.nge.

• Journal of the Korean Ceramic Society
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• v.46 no.2
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• pp.175-180
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• 2009

Multilayer ceramic capacitors (MLCCs) have continually been made smaller in size and larger in capacity in resent years. However, the end termination electrode is still thick in many MLCCs. In this study, we used small grain glass frit to embody thin film and highly densification in the end termination by improve sintering driving force with well-dispersion and rising surface energy. Pastes were fabricated using size changed glass frit, such as 0.1 ${\mu}m$, 0.5 ${\mu}m$, 1.0 ${\mu}m$, 4.0 ${\mu}m$. Fabricated pastes were applied 05A475KQ5 chip and fired various sintering temperatures to analyze sintering behavior of pastes. Consequently, small glass frit used pastes have many merits than larger, such as well-dispersion, improve cornercoverage and surface roughness, possibility of low temperature sintering. However, we confirmed that small glass frit used pastes have narrow sintering window by rapid completion of sintering densification.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.852-856
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• 2014

$BaTiO_3$ nano powder can be synthesized by hydrate salt method at $120^{\circ}C$ in air. Decreasing the thickness of thick film, the nano dielectric particle is needed in electronic ceramics. However, the synthesis of $BaTiO_3$ nano particle at low temperature in air and their mechanism were not reported enough. And ultrasonic treatment can be tried because of low temperature process in air. Therefore, in this study, the $BaTiO_3$ nano powder was synthesised with the synthesis time and ultrasonic treatment at $120^{\circ}C$ in air. In the synthesis process, the effects of process were evaluated. From the experimental observation, the synthesis mechanism was proposed. The homogeneous $BaTiO_3$ particle was synthesised by KOH salt solution at $120^{\circ}C$ for 1hour. It was conformed that the ultrasonic treatment effected on the increase of synthesis rate. After cutting the salt powder using FIB, $BaTiO_3$ nano particles observed homogeneously in the cross-section of the salt particle.

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.63-69
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• 2013

Negative-temperature coefficient (NTC) thermistors based on nickel manganite spinel ($NiMn_2O_4$) are widely used for many applications, such as sensors and temperature compensators, due to their good thermistor characteristics and stabilities. However, to achieve thermistors with a high NTC B constant, which is an important figure of merit pertaining to the degree of temperature sensitivity, the activation energy should be high such that high resistivity at ambient temperatures results. To obtain a high B constant and low resistivity, Al and Si modified spinel structured $Ni_{0.6}Si_{0.2}Al_{0.6}Mn_{1.6}O_4$ hybrid thick films with the conducting metal oxide of $LaNiO_3$ were fabricated on a glass substrate by aerosol deposition at room temperature (RT). The NTC-$LaNiO_3$ hybrid thick films showed resistivity as low as < $100k{\Omega}\;cm$ at $90^{\circ}C$, which is one or two orders of magnitude lower than that of the monolithic NTC films, while retaining a high B constant of $NiMn_2O_4$ of over 5500 K when 20 wt% $LaNiO_3$ was added without a post-thermal treatment. These phenomena are explained by the percolation threshold mechanism.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.479-483
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• 2002

Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{\circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{\circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${\mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${\mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.9
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• pp.931-935
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• 2012

In this study, we fabricate and investigate low-temperature solid oxide fuel cells with a ceramic substrate/porous metal/ceramic/porous metal structure. To realize low-temperature operation in solid oxide fuel cells, the membrane should be fabricated to have a thickness of the order of a few hundreds nanometers to minimize IR loss. Yttrium-doped barium zirconate (BYZ), a proton conductor, was used as the electrolyte. We deposited a 350-nm-thick Pt (anode) layer on a porous substrate by sputter deposition. We also deposited a 1-${\mu}m$-thick BYZ layer on the Pt anode using pulsed laser deposition (PLD). Finally, we deposited a 200-nm-thick Pt (cathode) layer on the BYZ electrolyte by sputter deposition. The open circuit voltage (OCV) is 0.806 V, and the maximum power density is 11.9 mW/$cm^2$ at $350^{\circ}C$. Even though a fully dense electrolyte is deposited via PLD, a cross-sectional transmission electron microscopy (TEM) image reveals many voids and defects.