• 한국세라믹학회지
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• 제33권10호
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• pp.1101-1108
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• 1996

No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$\AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{\circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${\mu}{\textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $\mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$\times$10-7 A/cm2 at the applied voltage of 1.5 V.

• 한국세라믹학회지
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• 제43권5호
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• pp.265-269
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• 2006

We have deposited NiO films by RF sputtering on $Al_2O_3/SiO_2/Si$ and 100 nm-thick Gd doped $CeO_2$ covered $Al_2O_3/SiO_2/Si$ substrates at various $Ar/O_2$ ratios. The deposited films were reduced to form porous Ni thin fllms in 4% $H_2\;at\;400^{\circ}C$. For the films deposited in pure Ar, the reduction was retarded due to the thickness and the orientation of the NiO films. On the other hand, the films deposited in oxygen mixed ambient were reduced and formed porous Ni films after 20 min of reduction. We also investigated the possibility of using the films for the single chamber operation by studying the electrical property of the films in the fuel/air mixed environment. It is shown that the resistance of the Ni film increases quickly in the mixed gas environment and thus further improvements of Ni-base anodes are required for using them in the single chamber operation.

• 한국전기전자재료학회논문지
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• 제37권2호
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• pp.119-132
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• 2024

Dielectric ceramic capacitors present high output power density due to the fast energy charge and discharge nature of dielectric polarization. By forming dense ceramic films with nano-grains through the Aerosol Deposition (AD) process, dielectric ceramic capacitors can have high dielectric breakdown strength, high energy storage density, and leading to high power density. Dielectric capacitors fabricated by AD process are expected to meet the increasing demand in applications that require not only high energy density but also high power output in a short time. This article reviews the recent progress on the dielectric ceramic capacitors with improved energy storage properties through AD process, including energy storage capacitors based on both leadbased and lead-free dielectric ceramics.

• 한국세라믹학회지
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• 제36권3호
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• pp.237-243
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• 1999

스크린 프린팅법을 이용하여 NOX 감지용 WO3 후막형 가스센서를 제조하였다. 본 실험에서는 감지막의 소성 온도에따른 감도변화 및 Ru을 첨가함으로써 감도의 증진을 중점적으로 조사하였다. 또한 NO2 50 ppm하에서 CO, H2, CH4 그리고 i-C4H10등의 가스에 대하여 cross sensitivity를 조사하였다. WO3 가스센서는 소성온도 50$0^{\circ}C$, 작동온도 30$0^{\circ}C$에서 최대감도를 얻었다. 순수한 WO3에 Ru(0.004 wt%)을 첨가시 NO2 및 NO 가스에 대한 감도가 크게 증진되었다. 그러나 순수한 WO3 센서는 Ru(0.004 wt%)이 첨가된 WO3 센서보다 더 우수한 cross sensitivity를 보였다.

• 한국레이저가공학회지
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• 제3권2호
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• pp.25-33
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• 2000

One of perspective direction of microfabrication is direct laser writing technology that allows to create metal, semiconductive and dielectric micropatterns on substrate surface. In this work, a two step method, the combination of seed forming process, in which metallic Al seed was selectively generated on AlN ceramic substrate by direct writing technique using a pulsed Nd : YAG laser and subsequent electroless Ni plating on the activated Al seed, was presented. The effects of laser parameters such as pulse energy, scanning speed and pulse frequency on shape of Alseed and conductor line after electroless Ni plating were investigated. The nature of the laser activated surface is analyzed from XPS data. The line width of this metallic Al and Ni is analyzed using SEM. As a results, Al seed line with 24㎛ width and 100㎛ isolated line space is obtained. Finally, laser direct writing can be applied in the field between thin and thick film technique in electronic industry.

• 한국산학기술학회논문지
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• 제18권7호
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• pp.17-25
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• 2017

최근에 LED나 OLED와 같은 조명용 소자의 온도 상승에 따른 문제점을 개선하기 위하여 전기 도금 방법을 사용하여 제작한 두께가 두꺼운 금속 필름을 heat sink로 사용하고 있다. Cu 필름과 같은 두꺼운 금속 필름은 습식 방법인 전기 도금으로 제작하여 주로 소자의 방열판으로 사용되어 왔으나 건식의 증착 방법을 이용한 수 백 ${\mu}m$의 Cu 금속 필름에 대한 필요성이 요구되고 있다. 본 연구에서 설계 제작된 유도 가열 방식의 Cu 필름 증착 장비는 가열부가 세라믹 도가니 히터 부분과 세라믹 도가니 부분으로 분리된 이중 구조의 heating 방식을 채택하여 열 손실을 최소화 하고 보온 효과를 극대화시켰다. 또한 유도 가열 방식으로 초고속의 필름 증착 속도를 구현하였다. 그리고 열전도도가 높고 안정적인 두꺼운 Cu 필름 증착기술을 확보하고 최적화 하여 $1000{\AA}/s$의 증착율로 $100{\mu}m$의 필름을 증착 하였으며 ~2.0% 이내의 두께 균일도를 얻었다.

• 한국결정성장학회지
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• 제30권5호
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• pp.183-188
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• 2020

에어로졸 증착법에 의해서 상온에서 5~10 ㎛ 두께의 PZN-PZT(0 %, 20 %, 40 %) 복합체의 막을 실리콘/사파이어 기판 위에서 제조하였다. PZN의 농도는 0 %, 20 % 및 40 %까지 첨가하였다. 실리콘기판 및 사파이어 기판 위에서 증착된 막은 전기로에서 700℃ 및 900℃에서 각각 어닐링처리 하였으며 900℃에서 어닐링한 경우의 잔류분극 및 유전 상수 등의 전기적 특성이 700℃에서의 특성보다 우수하였다. 특히 900℃에서 어닐링한 2PZN-8PZT 막의 경우 1200℃에서 소결한 같은 조성의 벌크재에서 얻은 값과 상호 비교하였다. 열처리 온도가 높아짐에 따라 유전상수가 증가하는 경향을 보이는데 이는 후열처리에 따른 막의 결정성의 향상과 입자 성장으로 기인한다.

• 한국재료학회지
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• 제18권4호
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• pp.169-174
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• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

• 한국세라믹학회지
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• 제38권11호
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• pp.1037-1041
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• 2001

저온(32$0^{\circ}C$)에서 SiH$_4$와 $N_2$O 가스의 혼합을 통해 플라즈마화학기상증착(PECVD)법을 이용하여 실리카 광도파로의 클래딩막으로 사용되는 SiO$_2$후막을 제조하였다. 증착변수가 SiO$_2$후막의 특성에 미치는 영향을 살펴보기 위해 $N_2$O/SiH$_4$flow ratio와 RF power에 변화를 주었다. $N_2$O/SiH$_4$ flow ratio가 감소함에 따라 증착속도는 2.9 $mu extrm{m}$/h), 굴절률은 thermal oxide의 굴절률(n=1.46)에 근접하였다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.239-242
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• 2003

Optical module package is a hermetic metal-ceramic package for carrying optical IC. In case of LD(laser diode) module, window is used for both the path of optical signal and hermetic sealing of package. So, window has the metallization pattern on the surface for brazing process with package wall. In this study, several method were investigated for metallization. Thin film, thick film and mixed method were used for fabrication of metallization pattern. After brazing process, hermeticity and adhesion strength were tested for characterization of metallization pattern.