• Title/Summary/Keyword: Ceramic thick film

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Thick-Film Strain-gage Ceramic-Pressure Sensor (세라믹 다이어프램을 이용한 후막 스트레인 게이지 압력센서)

  • 이성재;박하용;민남기
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.987-993
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    • 2001
  • In this paper, we presents the construction details and output characteristics of a thick film piezoresistive strain gage. The thick film was printed on the ceramic diaphragm back side by screen printing and cured at 850$^{\circ}C$. The strain distribution and deflection on ceramic diaphragm were performed with finite-element method(FEM tool ANSYS-5.3). Various thick film strain gage characteristics were analysed, including nonlinearity, hysteresis, stability and sensitivity of thick film strain gages.

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The estimation of dielectric constant of thick film using Vickers indentation

  • Kim, Hyeong-Jun;Kim, Kibum;Kim, Jongcheol;Yoon, Kyung-Han;Shin, Dongwook
    • Journal of Ceramic Processing Research
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    • v.13 no.spc2
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    • pp.241-245
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    • 2012
  • The barrier rib on plasma display panel (PDP) is a typical 3D-patterned thick film with thickness of 120 ㎛ and it is hard to measure its dielectric constant in this state of the product. Because the porosity of ceramic thick film influenced the mechanical and dielectric characteristics, it was expected that there was the relationship between two properties. Therefore, the correlation analysis between porosity, hardness and dielectric constant of the barrier rib was studied and the exponential curve between porosity and hardness, and the quadratic curve between porosity and dielectric constant were drawn. The dielectric constant was well related to hardness by K400kHz = 0.5672 + 5.695 ln(Hv). The hardness was measured at five points on two real panels which sintered by two types of profiles and then dielectric constants and deviation were estimated by the above equation.

Characteristics of $\alpha$-$Fe_2O_3$ Thick Film Fabricated by Screen Printing Method

  • Kim, Byung-Soo;Chung, Yong-Sun;Auh, Keun-Ho
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1998.09a
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    • pp.65-70
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    • 1998
  • Fine powders of $\alpha$-Fe2O3 were prepared by precipitation method using iron (III) nitrate in ethanol solvent and the thick film using this powder was made by the screen printing technology. Effects of the reaction temperature and concentration of the iron (III) nitrate on the particle size and specific surface area were studied. Also, the relationship between the powder size and properties of the thick film was discussed.

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Fabrication of Solid State Electrolyte Li7La3Zr2O12 thick Film by Tape Casting (테잎캐스팅을 이용한 전고체전해질 Li7La3Zr2O12 후막 제조)

  • Shin, Ran-Hee;Son, Samick;Ryu, Sung-Soo;Kim, Hyung-Tae;Han, Yoon-Soo
    • Journal of Powder Materials
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    • v.23 no.5
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    • pp.379-383
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    • 2016
  • A thick film of $Li_7La_3Zr_2O_{12}$ (LLZO) solid-state electrolyte is fabricated using the tape casting process and is compared to a bulk specimen in terms of the density, microstructure, and ion conductivity. The final thickness of LLZO film after sintering is $240{\mu}m$ which is stacked up with four sheets of LLZO green films including polymeric binders. The relative density of the LLZO film is 83%, which is almost the same as that of the bulk specimen. The ion conductivity of a LLZO thick film is $2.81{\times}10^{-4}S/cm$, which is also similar to that of the bulk specimen, $2.54{\times}10^{-4}S/cm$. However, the microstructure shows a large difference in the grain size between the thick film and the bulk specimen. Although the grain boundary area is different between the thick film and the bulk specimen, the fact that both the ion conductivities are very similar means that no secondary phase exists at the grain boundary, which is thought to originate from nonstoichiometry or contamination.

A Study of Deflection of Ceramic Diaphragm for a Pressure Sensor (후막저항의 기하학적 위치에 따른 압력센서의 출력특성 고찰)

  • Lee, Seong-Jae;Lee, Deuk-Young;Ha, Young-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.884-887
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    • 2003
  • Strain gages were widely used transducers. Essentially a strain gage was an electric element to which an appropriate type was attached. Strain was sensed by gages and provided electrical output proportional to applied forced. This paper describes the recent development of a thick film strain gage ceramic pressure sensors. The thick film resistors as strain gage in the Wheatstone bridge were fabricated with a novel mixture of ruthenium. The thick-film technology of resistors were printed on the ceramic diaphragm back side by screen printing and cured at $850^{\circ}C$. The mechanical measurements were performed with the computer simulation results(ANSYS 5.1). The output sensitivity was 1.2mV/V, of which max. nonlinearity was less than 0.29%, hysteresis was less than 0.38%FS.

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EPD Thick Film Formation of Ceramic Powder Materials (세라믹 분말재료의 EPD 후막형성 기술)

  • Soh, Dea-Wha;Jeon, Yong-Woo
    • Journal of the Speleological Society of Korea
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    • no.75
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    • pp.49-54
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    • 2006
  • Electrophoretic Deposition (EPD) is the most convenient technology to deposit natural or oxide powders of nonconductive materials in alcoholic suspension solution with adding electrolyte of iodine to form ceramic thick film on metal substrate under applied electric field with double electric layer between electrode and metal substrate. In this research work, the important parameters and technical ways were studied to form EPD thick films of typical oxide ceramics of Al2O3, YBCO and tourmaline powders.

Characteristics of PMN-PZ-PT Thick Film Ceramic by Low-Temperature Sintering Aids (저온 소결 조제에 따른 PMN-PZ-PT 후막 세라믹 특성)

  • Jung, Myungwon;Jeon, Dae-Woo;Kim, Jin-Ho;Lee, Youngjin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.8
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    • pp.476-482
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    • 2016
  • Convectional PZT based piezoelectric ceramics have to sinter at high temperature about $1,200^{\circ}C$ for their suitable electrical properties. However, some issues: low temperature sintering piezoelectric ceramic composition and reliable internal electrode, have recently attracted a great deal of interest as a highly efficient multi-layered piezoelectric ceramics. In order to optimize low temperature sintering conditions of thick-film PMN-PZ-PT ceramic, it was investigated sintering and piezoelectric properties according to the change of $LiBiO_2$ contents. Thus, the superior piezoelectric properties were found at the pallet type PMN-PZ-PT optimized with low sintering processing at $925^{\circ}C$ including 7 wt% $LiBiO_2$ sintering aid. Consequentially, we successfully manufactured thick-film PMN-PZ-PT ceramics, which had superior piezoelectric and dielectric properties, with 5 wt% of $LiBiO_2$ sintering aid at temperature of $900^{\circ}C$.

Effect of Screen Printing and Sintering Conditions on Properties of Thick Film Resistor on AlN Substrate (인쇄 및 소결조건이 AlN 기판용 후막저항체의 특성에 미치는 영향)

  • Koo, Bon Keup
    • Journal of the Korean Ceramic Society
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    • v.51 no.4
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    • pp.344-349
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    • 2014
  • $RuO_2$-based high frequency thick-film resistor paste was printed at the speed of 10, 100, 300 mm/sec on the AlN substrate, and then sintered at between 750 and $900^{\circ}C$. The sintered thick films were characterized in terms of printing and sintering conditions. With increasing printing speed, the thickness and roughness of sintered film increased. The resistance of the thick film resistor was reduced by increasing the printing speed from 10 to 100 mm/sec, but did not significantly change at 300 mm/sec speed. With increasing sintering temperature, the surface roughness and thickness of sintered resistor film decreased. The reduction rate was large in case of fast printed resistor. The resistance of the resistor increased up to $800^{\circ}C$ with sintering temperature, but again decreased at the higher sintering temperature.

On the Stannic Oxide Thick Film (산화 주석 후막에 대하여)

  • 박순자
    • Journal of the Korean Ceramic Society
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    • v.12 no.1
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    • pp.5-11
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    • 1975
  • Thick film resistor paste was made utilizing oxide materials such as SnO, SnO+Sb2O3, and SnO+Zn. The oxide materials were mixed respectively with Q-12 glass powder and finally suspended in ethyl cellulose dissolved in ethyl cellosolve. Thick film resistor was made by screen printing the paste on the alumina substrate and firing it at a suitable temperature. Among thick films made from the resistor paste, the thick film containing 85% SnO and fired at $600^{\circ}C$ demonstrated the finest electrical properties showing 10 K ohm in sheet resistance, 110 ppm/$^{\circ}C$ in TCR. In general, TCR of the thick films made from the oxide-mixture paste is good in linearity, therefore it is suggested the oxide-mixture paste is utilized as the negative thermistor.

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Fabrication of Ceramic-based Passive Mixers for Microfluidic Application by Thick Film Lithography (후막리소그라피를 이용한 세라믹기반의 미세유체소자용 수동형 혼합기의 제조)

  • Choi, Jae-Kyung;Yoon, Young-Joon;Lim, Jong-Woo;Kim, Hyo-Tae;Koo, Eun-Hae;Choi, Youn-Suk;Lee, Jong-Heun;Kim, Jong-Hee
    • Journal of the Korean Ceramic Society
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    • v.45 no.11
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    • pp.739-743
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    • 2008
  • Microfluidic device can be applied in a wide range of chemical and biological technology. In this paper, ceramic-based T-type passive mixers for microfluidic applications were fabricated by LTCC process combined with thick film photolithography. The base ceramic material in thick film was amorphous cordierite $((Mg,Ca)_2Al_4Si_5O_{18})$ and photoimageable polymers were added to give a photosensitivity. Two types of passive mixer, which showed the channel width of 1.0 mm and $200{\mu}m$, respectively, were designed considering mixing efficiency in the channel and their microfluidic properties were discussed in detail.