• Title/Summary/Keyword: Ceramic deposition

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Electrical and Optical Properties of Sb-doped SnO2 Thin Films Fabricated by Pulsed Laser Deposition (펄스레이저 공정으로 제조한 Sb가 도핑된 SnO2 박막의 전기적 및 광학적 특성)

  • Jang, Ki-Sun;Lee, Jung-Woo;Kim, Joongwon;Yoo, Sang-Im
    • Journal of the Korean Ceramic Society
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    • v.51 no.1
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    • pp.43-50
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    • 2014
  • We fabricated undoped and Sb-doped $SnO_2$ thin films on glass substrates by a pulsed laser deposition (PLD) process. Undoped and 2 - 8 wt% $Sb_2O_3$-doped $SnO_2$ targets with a high density level of ~90% were prepared by the spark plasma sintering (SPS) process. Initially, the effects of the deposition temperature on undoped $SnO_2$ thin films were investigated in the region of $100-600^{\circ}C$. While the undoped $SnO_2$ film exhibited the lowest resistivity of $1.20{\times}10^{-2}{\Omega}{\cdot}cm$ at $200^{\circ}C$ due to the highest carrier concentration generated by the oxygen vacancies, 2 wt% Sb-doped $SnO_2$ film exhibited the lowest resistivity value of $5.43{\times}10^{-3}{\Omega}{\cdot}cm$, the highest average transmittance of 85.8%, and the highest figure of merit of 1202 ${\Omega}^{-1}{\cdot}cm^{-1}$ at $400^{\circ}C$ among all of the doped films. These results imply that 2 wt% $Sb_2O_3$ is an optimum doping content close to the solubility limit of $Sb^{5+}$ substitution for the $Sb^{4+}$ sites of $SnO_2$.

Room-temperature Preparation of Al2O3 Thick Films by Aerosol Deposition Method for Integrated RE Modules

  • Tsurumi, Takaaki;Nam, Song-Min;Mori, Naoko;Kakemoto, Hirofumi;Wada, Satoshi;Akedo, Jun
    • Journal of the Korean Ceramic Society
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    • v.40 no.8
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    • pp.715-719
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    • 2003
  • The Aerosol Deposition (AD) process will be proposed as a new fabrication technology for the integrated RF modules. $\alpha$-A1$_2$O$_3$ thick films were successfully grown on glass and Al substrates at room temperature by the AD process. Relative dielectric permittivity and loss tangent of the $Al_2$O$_3$ thick films on Al showed 9.5 and 0.005, respectively. To form microstrip lines on aerosol-deposited A1903 thick films, copper electroplating and lithography processes were employed, and the square-type cross section with sharp edges could be obtained. Low-pass LC filters with 10 GHz cutoff frequency were simulated by an electromagnetic analysis, exhibiting the validity of the AD process as a fabrication technology f3r integrated RF modules.

Multi-walled Carbon Nanotube-Reinforced Hydroxyapatite Coating on Ti Substrates by Aerosol Deposition (에어로졸 증착법에 의해 티타늄 기판위에 제조된 다중벽 탄소나노튜브 강화 수산화아파타이트 코팅층)

  • Hahn, Byung-Dong;Park, Dong-Soo;Ryu, Jung-Ho;Choi, Jong-Jin;Yoon, Woon-Ha;Lee, Byung-Kuk;Kim, Hyoun-Ee
    • Journal of the Korean Ceramic Society
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    • v.45 no.10
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    • pp.610-617
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    • 2008
  • Multi-walled carbon nanotube(CNT) reinforced hydroxyapatite composite coating with a thickness of $5{\mu}m$ has been successfully deposited on Ti substrate using aerosol deposition(AD). The coating had a dense microstructure with no cracks or pores, showing good adhesion with the Ti substrate. Microstructural observation using field-emission scanning electron microscopy(FE-SEM) and transmission electron microscopy(TEM) showed that CNTs with original tubular morphology were found in the hydroxyapatite-CNT(HA-CNT) composite coating. Measurements of hardness and elastic modulus for the coating were performed by nanoindentation tests, indicating that the mechanical properties of the coating were remarkably improved by the addition of CNT to HA coating. Therefore, HA-CNT composite coating produced by AD is expected to be potentially applied to the coating for high load bearing implants.

Thin Film (La0.7Sr0.3)0.95MnO3-δ Fabricated by Pulsed Laser Deposition and Its Application as a Solid Oxide Fuel Cell Cathode for Low-Temperature Operation

  • Noh, Ho-Sung;Son, Ji-Won;Lee, Heon;Kim, Hae-Ryoung;Lee, Jong-Ho;Lee, Hae-Weon
    • Journal of the Korean Ceramic Society
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    • v.47 no.1
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    • pp.75-81
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    • 2010
  • The feasibility of using the thin film technology in utilizing lanthanum strontium manganite (LSM) for a solid oxide fuel cell (SOFC) cathode in a low-temperature regime is investigated in this study. Thin film LSM cathodes were fabricated using pulsed laser deposition (PLD) on anode-supported SOFCs with yttria-stabilized zirconia (YSZ) electrolytes. Although cells with a 1 ${\mu}m$-thick LSM cathode showed poor low-temperature cell performance compared to that of a cell with a bulk-processed cathode due to the lack of a triple-phase boundary length, the cell with 200 nm-thick gadolinia-doped ceria (GDC) inserted between the LSM and YSZ showed enhanced performance and more stable operation characteristics in a comparison of a cell without a GDC layer. We postulate that the GDC layer likely improved the cathode adhesion, therefore contributing to the improvement of the cell performance instead of serving as an interfacial reaction buffer.

The Effect of Tail State on the Electrical and the Optical Properties in Amorphous IGZO (비정질 InGaZnO4 박막의 전기적, 광학적 특성간의 상관관계 연구)

  • Bae, Sung-Hwan;Yoo, Il-Hwan;Kang, Suk-Ill;Park, Chan
    • Journal of the Korean Ceramic Society
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    • v.47 no.4
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    • pp.329-332
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    • 2010
  • In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at $150^{\circ}C$ right after the film deposition. The $O_2$ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to $18\;cm^2/Vs$ at carrier concentrations greater than $10^{18}\;cm^{-3}$. As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in >3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.

The Effect of RF Power and $SiH_4$/($N_2$O+$N_2$) Ratio in Properties of SiON Thick Film for Silica Optical Waveguide (실리카 광도파로용 SiON 후막 특성에서 RF Power와 $SiH_4$/($N_2$O+$N_2$) Ratio가 미치는 영향)

  • 김용탁;조성민;서용곤;임영민;윤대호
    • Journal of the Korean Ceramic Society
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    • v.38 no.12
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    • pp.1150-1154
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    • 2001
  • Silicon oxynitride (SiON) thick films using the core layer of silica optical waveguide have been deposited on Si wafer by PECVD at low temperature (32$0^{\circ}C$) were obtained by decomposition of appropriate mixture of (SiH$_4$+$N_2$O+$N_2$) gaseous mixtures under RF power and SiH$_4$/($N_2$O+$N_2$) ratio deposition condition. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4663 to 1.5496. A high SiH$_4$/($N_2$O+$N_2$) of 0.33 and deposition power of 150 W leads to deposition rates of up to 8.67 ${\mu}{\textrm}{m}$/h. With decreasing SiH$_4$/($N_2$O+$N_2$) ratio, the SiON layer become smooth from 41$\AA$ to 6$\AA$.

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Dielectric and Pyroelectric Prooperties of (Ba,Sr)TiO$_3$ Thin Films Grown by RF Magntron Sputtering (RF 마그네트론 스퍼터링 방법으로 제조한 (Ba,Sr)TiO$_3$ 박막의 유전 및 초전특성)

  • 박재석;김진섭;이정희;이용현;한석룡;이재신
    • Journal of the Korean Ceramic Society
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    • v.36 no.4
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    • pp.403-409
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    • 1999
  • The dielectric and pyroelectric properties of $Ba_{0.66}$$Sr_{0.38}$$TiO_{3}$(BST) thin films growtn on Pt/Ti/NON/Si us-ing RF magnetron sputtering have been investigated. With increasing the substrate temperature during de-position of the BST film in the range of 300-$600^{\circ}C$ the dielectric and pyroelectric constants of the film were increased due to improved crystallinity of the film. In addition the dependence of the microstructural and electrical properties of BST films onthe deposition temperature of the bottom Pt electrode was studied. The preferred orientation of the BST films as well as the microstructure of the Pt film was greatly in-fluenced by the deposition temperature of the bottom Pt electrode was studied. The preferred orientation of the BSt films as well as the microstructure of the Pt film was greatly in-fluenced by the deposition temperature of the bottom Pt electrodes. and thus so were the pyrolelectric pro-perties of the BST film. The highest value of pyroelectric coefficient at room temperature obtained in this work was $nCcm^{-2}K^{-1}$ which is much higher than those previously reported on other perovskite fer-roelectric thin films.

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Importance of Hardness and Elasticity of Polymer Powders on Growth of Ceramic-based Polymer Composite Thick Films Using Aerosol Deposition Method (Aerosol Deposition Method를 이용한 세라믹 기반 폴리머 복합체 후막의 성장에 있어 폴리머 파우더의 경도와 탄성의 중요성)

  • Na, Hyun-Jun;Yoon, Young-Joon;Kim, Jong-Hee;Nam, Song-Min
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.345-345
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    • 2008
  • 최근 전자 소자의 고주파화, 소형화에 대한 요구가 증대 되면서 많은 소자들을 하나의 시스템에 3차원적으로 실장시키는 SOP (System-on-Package)가 새로운 대안으로 떠오르고 있으며 SOP를 실현하기 위해서는 집적기판에 대한 저온화 공정 기술이 절실히 필요한 실정이다. 현재 집적기판에 사용되는 재료로서 세라믹이 널리 알려져 있지만 세라믹은 취성이 있으며 $1000^{\circ}C$ 이상의 고온화 공정 프로세스를 필요로 하는 근본적인 약점이 있다. 이에 본 연구에서는 상온에서 고속으로 치밀한 성막을 가능케 하는 Aerosol Deposition Method (ADM)를 이용하여 최초로 세라믹-폴리머 복합체 후막을 성공적으로 제작하였다. XRD와 FT-IR 분석 결과 $Al_2O_3$-PMMA, $Al_2O_3$-PI 혼합물을 출발 파우더로 사용하여 제조한 후막이 세라믹-폴리머 복합체임을 확인할 수 있었다. 또한 SEM 분석결과 $Al_2O_3$-PMMA 복합체와 $Al_2O_3$-PI 복합체의 표면 양상이 매우 다르다는 점을 확인하였으며 $Al_2O_3$-PMMA 복합체의 성막률이 $Al_2O_3$-PI 복합체의 성막률에 비해 매우 낮음을 확인하였다. 이러한 현상들은 폴리머 파우더들의 경도와 탄성 차이 때문인 것으로 사료되어 이를 증명하기 위한 실험을 실시하였다. 결국 PMMA 막과 PI 막에 대한경도측정결과와 PMMA 파우더와 PI 파우더의 유성 볼밀링 전후에 대한 SEM 이미지를 통해 PMMA 파우더가 PI 파우더에 비해 경도가 낮으며 반면 탄성이 높다는 것을 간접적으로 확인할 수 있었다. 이와 같은 분석을 통하여 ADM을 이용한 세라믹-폴리머 복합체 후막의 제조에 있어 폴리머 파우더의 경도와 탄성이 매우 큰 영향을 미친다는 것을 알 수 있었다. 본 연구에서는 세라믹-폴리머 복합체 후막을 성공적으로 제조하기 위해서 폴리머 파우더의 적절한 선택이 중요함을 알 수 있었으며 ADM을 이용한 세라믹-폴리머 복합체 후막의 제조에 대한 가이드 라인을 제시할 수 있을 것으로 기대된다.

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Preparation of Electrolyte Thin Film for Anode Support Type Solid Oxide Fuel Cells by Electrophoretic Deposition and Dip-Coating (전착법과 담금법에 의한 음극지지형 SOFC 지르코니아 전해질막 제조)

  • 김상우;이병호;손용배;송휴섭
    • Journal of the Korean Ceramic Society
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    • v.36 no.8
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    • pp.791-798
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    • 1999
  • The preparation method of yttria-stabilized zirconia(YSZ) thin film for an anode support type solid oxide fuel cell(SOFC) by electrophoretic deposition(EPD) and dip-coating was studied. And the difference in both preparation method was investigated through basic understanding of processing parameters which may significantly affect weight microstruxcture and defect of film. In dip-coating the thickness of film increased with time until 30 s and then the weight of film decreased with time due to particle falling off from the coagulated film. In EPD although the weight of film increased with time and applied constant-current sagging of the film was observed when the applied current was less that 0.035 mA/$cm^2$ and more than 120 s. Since YSZ thin film by EPD on porous substrate was dense smooth and homogeneous it was expected to be suitable for the electrolyte of an anode support type SOFC.

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Electrochemical Corrosion Properties of YSZ Coated AA1050 Aluminium Alloys Prepared by Aerosol Deposition (에어로졸 증착법에 의한 YSZ 코팅된 AA1050 알루미늄 합금의 전기화학적 부식 특성)

  • Ryu, Hyun-Sam;Lim, Tae-Seop;Ryu, Jung-Ho;Park, Dong-Soo;Hong, Seong-Hyeon
    • Journal of the Korean Ceramic Society
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    • v.48 no.5
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    • pp.439-446
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    • 2011
  • Yttria stabilized zirconia (YSZ) coating was formed on AA1050 Al alloys by aerosol deposition (AD), and its electrochemical corrosion properties were investigated in 3.5 wt% NaCl and 0.5M $H_2SO_4$ solutions. The crack-free, dense, and ~5 ${\mu}m$ thick YSZ coating was successfully obtained by AD. The as-deposited coating was composed of cubic-YSZ nanocrystallites of ~10 nm size. The potentiodynamic test indicated that the YSZ coated Al alloy had much lower corrosion current densities (2 nA/$cm^2$) by comparison to uncoated sample and exhibited a passive behavior in anodic branch. Particularly, a pitting breakdown potential could not be identified in $H_2SO_4$. EIS tests revealed that the impedance of YSZ coated sample was ${\sim}10^6{\Omega}cm^2$ in NaCl and ${\sim}10^7{\Omega}cm^2$ in $H_2SO_4$, which was about 3 or 4 orders of magnitude higher than that of uncoated sample. Consequently, the corrosion resistance of Al alloy had been significantly enhanced by the YSZ coating.