• 한국세라믹학회지
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• 제35권9호
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• pp.945-952
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• 1998

Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{\circ}C$to 780$^{\circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{\circ}C$ and then SBT thin films were annealed at 800$^{\circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{\circ}C$ remanant polarization values (2Pr) were 6.7 9 ${\mu}$C/cm2 and those of leakage current densities were 3.73${\times}$10-7 1.32${\times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS.

• Carbon letters
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• 제26권
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• pp.51-60
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• 2018

An electroless deposition method was used to modify the surface properties of rice husk ceramic particles (RHC) by depositing nano-nickel on the surface of the RHC (Ni-RHC). The dry tribological performances of aluminum matrix composite adobes containing different contents of RHC and Ni-RHC particles have been investigated using a micro-tribometer. Results showed that the Ni-RHC particles substantially improved both the friction and wear properties of the Ni-RHC/aluminum matrix adobes. The optimal concentration was determined to be 15 wt% for both the RHC and Ni-RHC particles. The improvements in the tribological properties of aluminum adobes including the Ni-RHC were ascribed to friction-induced peeling off of Ni coating and formation of protection layer on the wear zone, both of which led to low friction and wear volume.

• 한국세라믹학회지
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• 제41권6호
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• pp.435-438
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• 2004

MOCVD is one of the major deposition techniques for Cu thin films and Ta-Si-N is one of promising barrier metal candidates for Cu with high thermal stability. Effects of hydrogen plasma pretreatment of the underlying Ta-Si-N film surface on the Cu nucleation in Cu MOCVD were investigated using scanning electron microscopy, X-ray photoelectron spectroscopy and Auger electron emission spectrometry analyses. Cu nucleation in MOCVD is enhanced as the rf-power and the plasma exposure time are increased in the hydrogen plasma pretreatment. The optimal plasma treatment process condition is the rf-power of 40 Wand the plasma exposure time of 2 min. The hydrogen gas flow rate in the hydrogen plasma pretreatment process does not affect Cu nucleation much. The mechanism through which Cu nucleation is enhanced by the hydrogen plasma pretreatment of the Ta-Si-N film surface is that the nitrogen and oxygen atoms at the Ta-Si-N film surface are effectively removed by the plasma treatment. Consequently the chemical composition was changed from Ta-Si-N(O) into Ta-Si at the Ta-Si-N film surface, which is favorable for Cu nucleation.

• 한국염색가공학회지
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• 제22권2호
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• pp.118-122
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• 2010

The interest in textile which has far-infrared ray emissive property has been increased in the field of biophysics and medicine. In this study, far-infrared ray emissive polyurethane nano-web was obtained using electrospinning of polyurethane(PU) solution mixed with ceramics powder and far-infrared ray emissive properties of nano-web were evaluated by measuring far-infrared ray emission power and emissivity(%). To investigate the influence of concentration of ceramics powder in PU solution and temperature for far-infrared ray emissive properties, far-infrared ray emissivity was measured at varied temperature using various nano-web including varied concentration of ceramics powder. Polyurethane nano-web was characterized by SEM to observe the deposition of ceramics powder on polyurethane nano-web surface. The far-infrared ray emissivity was increased with the concentration of ceramics powder in the nano-web. The far-infrared ray emission power was enhanced with increasing temperature of the samples; however, far-infrared ray emissivity was decreased with increasing temperature because the increase of emission power of ceramic containing nano-web was lower than the emission power of black body one.

• 한국세라믹학회지
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• 제38권4호
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• pp.370-379
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• 2001

PLD(pulsed laser deposition) 기법을 이용하여 LaAl $O_3$(100) 기판 위에 L $a_{0.67}$ $A_{0.33}$Mn $O_{3-{\delta}}$ (A=Ca, Sr, Ba) 에피 박막을 성장하였다. 박막의 격자 상수 및 스트레인 상태는 GID(grazing incidence X-ray diffraction)법과 투과 전자 현미경 법을 이용하여 조사하였다. 박막의 <001> 방향은 기판 표면의 수직방향에 평행하게 놓였으며, 박막의 단위포는 기판과의 격자 불일치에 기인하여 a/c=0.98인 의사-정방정 페롭스카이트(pseudo-tetragonal perovskite) 구조를 가졌다. A 자리의 양이온 반경이 증가함에 따라 단위포의 체적, $\varepsilon$$^{∥}$, 그리고 $\varepsilon$$_{⊥}$이 각각 증가하였다. L $a_{0.67}$ $A_{0.33}$Mn $O_{3-{\delta}}$ (A=Ca, Sr, Ba) 박막의 온도 및 자장에 따른 전기 전도 특성 MR(%), Tc, $T_{MI}$ 들을 조사하였으며, 이 결과들을 박막의 구조적 특성과 상관하여 고찰하였다.여 고찰하였다.

• 한국세라믹학회지
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• 제42권3호
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• pp.150-154
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• 2005

Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_{3}O_{12}(BSmT)$ thin films were synthesized by sol-gel process. In this experiments, $Bi(TMHD)_{3},\;Sm_{5}(O^{i}Pr)_{13},\;Ti(O^{i}Pr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. The BSmT thin films were deposited on the Pt/TiO/SiO/Si substrates by spin-coating. Thereafter, the thin films with the thickness of 240 nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 h, and post-annealed in oxygen atmosphere for 1 h after deposition of Pt electrode to enhance the electrical properties. To investigate the effects of Sm-substitution in the BTO thin films, the BTO and BSmT thin films were prepared, respectively. The remanent polarization and coercive voltage of the BSmT thin films annealed at $720^{\circ}C$ were $19.48{\mu}C/cm^2$ and 3.40 V, respectively.

• 한국세라믹학회지
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• 제30권6호
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• pp.441-448
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• 1993

The Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ by rf magnetron sputtering method have individual preferential orientations as a function of composition (X=0, 0.25, 0.5, 0.75, 1) due to the stress relief interactions among the intrinsic compressive stress, thermal tensile stress adn extrinsic compressive stress (compressive stress in case of BaTiO3(Tc=12$0^{\circ}C$) and Ba0.75Sr0.25TiO3(Tc=57$^{\circ}C$)). This behavior also appears on the (BaSr)TiO3 thin films (X=0.5) deposited on ITO-coated glass substrate at deposition temperature between 35$0^{\circ}C$ and 55$0^{\circ}C$. The composition of Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ is close to stoichiometry (1.009~1.089 in A/B ratio), but the compositional deviation from a stoichiometry is larger as SrTiO3 is added. The morphology of Ba1-xSrxTiO3 thin films is very similar for over all substrate temperatures, and the roughness due to the differences of cluster size is the smallest at X=0.25.

• 한국세라믹학회지
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• 제43권1호
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• pp.38-41
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• 2006

Surface of PC (Polycarbonate) and PES (Polyethersulphone) treated by plasma modification with rf power from 50 W to 200 W substrates in Ar (3 sccm), $O_2$ (12 sccm) atmosphere. From the results of modified substrates in XPS (X-ray Photoelectron Spectroscopy), the ratio of oxide containing bond increased with rf power. As the rf power was 200 W, the contact angle was the lowest value of 14.09 degree. And the datum from AFM (Atomic Force Microscopy), rms roughness value of PES and PC substrates increased with rf power. We could deposit $Ta_2O_5$ with good adhesion on plasma treated PES and PC substrates using by in-situ rf magnetron sputter.

• 한국세라믹학회지
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• 제44권8호
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• pp.403-406
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• 2007

Ferroelectric Ce-doped $Bi_4Ti_3O_{12}$ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a $Pt(111)/Ti/SiO_2/Si(100)$ substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric flims. After annealing above $640^{\circ}C$, the BCT films exhibited a polycrystalline structure with preferred (001) and (117) orientations. The BCT lam capacitor with a top Pt electrode showed a large remnant polarization ($2P_r$) of $44.56{\mu}C/cm^2$ at an applied voltage of 5 V and exhibited fatigue-free behavior up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.

• 한국세라믹학회지
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• 제52권1호
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• pp.72-76
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• 2015

150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick $SiO_2$ buffer layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates. The electrical, structural, and optical properties of the IZTO/$SiO_2$/PET films were analyzed with respect to the thickness of the $SiO_2$ buffer layer. The mechanical properties were outstanding at a $SiO_2$ thickness of 50 nm, with a resistivity of $1.45{\times}10^{-3}{\Omega}-cm$, carrier concentration of $8.84{\times}10^{20}/cm^3$, hall mobility of $4.88cm^2/Vs$, and average IZTO surface roughness of 12.64 nm. Also, the transmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the $SiO_2$ thickness. These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices.