• The Korean Journal of Ceramics
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• 제3권4호
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• pp.263-268
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• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

• 공업화학
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• 제29권1호
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• pp.18-21
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• 2018

본 연구에서는 대용량 구조 촉매의 제조 및 활용 가능성을 확인하고자 셀 밀도가 높은 세라믹 허니컴 구조체와 온도조절 화학기상증착법을 활용하여 촉매를 제조하고 건식 개질 반응에 대한 촉매 활성을 평가하였다. 셀 밀도 600 cpsi 코디어라이트 허니컴(CDR)을 대상으로 니켈을 코팅한 NiO/CDR 촉매는 코팅 조건과 시간을 조절함으로써 허니컴 구조체 셀 내부까지 충분한 균일 증착이 가능하였다, $800^{\circ}C$, 공간속도 $10,000h^{-1}$과 $CH_4$와 $CO_2$를 1 : 1로 주입한 조건에서 $CH_4$는 약 83%, $CO_2$는 약 90% 이상의 우수한 전환율을 보여 건식 개질 반응에 효과적으로 적용이 가능하다는 것을 확인하였다. 이 결과를 토대로 대면적, 대용량 촉매 제조 시 온도조절 화학기상증착법이 매우 유용하게 활용될 수 있음을 확인하였다.

• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.14-17
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• 2002

The effects of substrate temperatures and annealing temperatures on the microstructures and ferroelectric properties of PbZ $r_{0.52}$ $Ti_{0.48}$ $O_3$(PZT) thin fims prepared by pulsed laser deposition (PLD) were investigated. For this purpose, the PZT films were deposited at various substrate temperatures (400~$600^{\circ}C$) with post annealing process in oxygen atmosphere. The single perovskite phase was formed at the deposition temperature of 500 to 55$0^{\circ}C$ without post annealing and the PZT films deposited below 50$0^{\circ}C$ formed the single phase with post annealing at $650^{\circ}C$. The grain size of the films increased and the grain boundary of the films was clearly defined as the substrate temperature increased from 400 to 55$0^{\circ}C$. The remnant polarization (Pr) and the coercive field (Ec) of the films deposited at 55$0^{\circ}C$ and annealed at $650^{\circ}C$ were 34.3 $\mu$C/c $m^2$and 60.2 kV/cm, respectively.y.y.

• 한국세라믹학회지
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• 제46권3호
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• pp.234-241
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• 2009

In this study, CNT/$TiO_2$ composites derived from various titanium alkoxides and multiwalled carbon nanotubes (MWCNTs) were synthesized and characterized. Surface areas and pore volumes of the CNT/$TiO_2$ samples showed catastrophic decrease due to deposition of titanium compounds. Scanning electron microscopy (SEM) results indicated that the MWCNTs were homogenously decorated and well-dispersed onto/into the composites without apparent agglomeration of $TiO_2$ particles. In the X-ray diffraction (XRD) patterns, peaks of anatase and rutile phase were observed. The energy dispersive X-ray spectroscopy (EDX) spectra revealed the presence of major elements such as C and O with strong Ti peaks. According to the photocatalytic results, MB removal by a treatment with CNT/$TiO_2$ composites seems to have an excellent removal effect as order of CTIP, CTNB and CTPP composites due to a photolysis of the supported $TiO_2$, the radical reaction and the adsorptivity and absorptivity of the MWCNTs.

• 한국세라믹학회지
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• 제55권3호
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• pp.285-289
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• 2018

We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.

• 한국세라믹학회지
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• 제46권1호
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• pp.10-15
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• 2009

We have fabricated silicon-rich silica thin films via RF magnetron sputtering using a SiO target. Thickness evolution and microstructure change of such $SiO_x$ (1$SiO_x$ thin films turned out to be mainly responsible for the increase of refractive index.

• 한국세라믹학회지
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• 제29권7호
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• pp.525-532
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• 1992

TiO2 fine powder was synthesized in the gas phase by chemical vapor deposition using hydrolysis of TiCl4. Content of rutile phase in the powder was investigated. Powder characteristics such as size, crystallinity and morphology were also studied by means of TEM, SEM and XRD. Rutile phase in TiO2 powder started to be formed from 100$0^{\circ}C$ and the content increased with the reaction temperature and TiCl4 concentration. As the temperature increased from 80$0^{\circ}C$ to 140$0^{\circ}C$, the primary particle size increased while secondary particle size decreased. Spherical secondary particle with fine primary crystals agglomerated was produced at low temperature of 80$0^{\circ}C$ whereas the grown primary particle being final particle size was produced at higher temperature of 140$0^{\circ}C$. Other effects of TiCl4 and H2O partial pressures on particle size were also reported in this study.

• 한국세라믹학회지
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• 제41권12호
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• pp.880-883
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• 2004

Carbon nanofibers could be selectively formed at the groove area of the MgO substrate using microwave plasma-enhanced chemical vapor deposition system. Iridium metal was used as a catalyst layer for the formation of the carbon nanofibers. The growth direction of the carbon nanofibers was vertical to the substrate surface. The selectively grown iridium-catalyzed carbon nanofibers show around $1.8V/{\mu}m$ turn-on voltage and $1.0\;mA/cm^2$ field emission current density at $2.65\;V/{\mu}m$ in the field emission measurement.

• 한국세라믹학회지
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• 제38권8호
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• pp.683-686
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• 2001

Electrochemically active lithium nickel cobalt oxide thin-film was not fabricated until now. The thin-film was deposited by RF magnetron sputtering at room temperature, and its initial phase was amorphous. By varying deposition condition, the different characteristics of thin-film were achieved. Using electrochemical analyses, the relationship between physical and electrochemical characteristics was identified. Crystallized thin-film by RTA (Rapid Thermal Annealing) was shown a good capacity and cycle property.

• 한국세라믹학회지
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• 제32권4호
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• pp.441-447
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• 1995

Ba0.65Sr0.35TiO3 (BST) thin films were deposited on Pt/SiO2/Si(100) substrate by rf magnetron sputtering. The substrate temperature changed from 35$0^{\circ}C$ to 55$0^{\circ}C$ and crystalline BST thin films were deposited above 45$0^{\circ}C$. Most of the films had (111) preferred orientation regardless of deposition temperature, but the films changed to (100) preferred orientation as gas pressure increased. The dielectric constant increased with increasing substrate temperature and film thickness, and ranged from 100 to 600 at room temperature. The leakage current increased as substrate temperature increased or as film thickness decreased.