• 한국전기전자재료학회논문지
• /
• 제30권1호
• /
• pp.59-62
• /
• 2017

CNT (carbon nanotube) resistors with low resistance and negative TCR (temperature coefficient of resistance) were fabricated with yarned CNT (carbon nanotube) fibers. The CNT fibers were prepared by yarning CNTs grown on the silicone substrate by CVD (chemical vapor deposition) method. The CNT resistors were fabricated by winding CNT fibers on the surface of ceramic rod. Both metal terminals were connected with the CNT fiber wound on the ceramic rod. We measured electrical resistance and thermal stability with the number of CNT fibers wound. The CNT resistor system shows linearly decreased resistance with the number of CNTs wound on the ceramic rod and saturated at 20 strands. The CNT resistor system has negative TCR between $-1,000{\sim}-2,000ppm/^{\circ}C$ and stable frequency properties under 100 kHz.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.116-116
• /
• 2007

We investigated the characteristics of the Hafnium silicate (Hf-silicate) film which is grown by ALD (atomic layer deposition). The Hf-silicate films that were annealed by the RTP. The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas and $NH_3$ gas annealing, were investigated by XPS, TEM and I-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The tendency of nitnitridation in NO gas and $NH_3$ is different. Leakage current is improved in post NO gas annealing.

• 한국수소및신에너지학회논문집
• /
• 제32권5호
• /
• pp.340-346
• /
• 2021

The initial electrochemical performance of ceramic fuel cell with thin-film electrolyte fabricated by plasma-enhanced atomic layer deposition method was evaluated in terms of peak power density ratio, open circuit voltage ratio, and activation/ohmic resistance ratios at 500℃. Hydrogen and air were used as anode fuel and cathode fuel, respectively. The peak power density ratio reduced as ~52% for 30 min, which continually decreased as time increased but degradation rate gradually decreased. The open circuit voltage ratio decreased with respect time; however, its behavior was evidently different from the reduction behavior of the peak power density. The activation resistance ratio increased as ~127% for 30 min, which was almost similar with the reduction behavior of the peak power density ratio.

• 한국전기전자재료학회논문지
• /
• 제32권3호
• /
• pp.192-195
• /
• 2019

Single-crystal diamond obtained by chemical vapor deposition (CVD) exhibits great potential for use in next-generation power devices. Low defect density is required for the use of such power devices in high-power operations; however, plastic deformation and lattice strain increase the dislocation density during diamond growth by CVD. Therefore, characterization of the dislocations in CVD diamond is essential to ensure the growth of high-quality diamond. In this work, we analyze the characteristics of the dislocations in CVD diamond through synchrotron white beam X-ray topography. In estimate, many threading edge dislocations and five mixed dislocations were identified over the whole surface.

• The Korean Journal of Ceramics
• /
• 제6권2호
• /
• pp.134-137
• /
• 2000

Zirconia films stabilized b $Y_2O_3$, YSZ, films were deposition by metal organic chemical vapor deposition (MOCVD) onto various kind of substrates. $Y_2O_3$, $ZrO_2$and the mixtures of these two were deposited and characterized. The deposition rate, the film composition and the structure could be systematically varied through the $Y(C_{11}H_{19}O_2)_3$, Zr(O.t-$C_H_9)_4$source gas ratios and the deposition temperature. The Y/Zr ratio in YSZ film could be adjusted by controlling the ratio of $Y(C_{11}H_{19}O_2)_3$, Zr(O.t-$C_4H_9)_4$partial pressures. This is because the ratios of the deposition rates of Y and Zr atoms in $Y_2O_3$and $ZrO_2$films to those in YSZ films, Ф, are constant irrespective of the input gas concentration. However, the Y/Zr ratio was found to be smaller than that estimated based on the deposition rates of un-mixed $Y_2O_3$and $ZrO_2$films. This is because the Фs of Y and Zr atoms are not equal. The activation energy of $Y_2O_3$component in YSZ films was similar to that of $ZrO_2$component in YSZ films. These YSZ values were more than 4 times larger than those of un-mixed $Y_2O_3$or $ZrO_2$films.

• 한국세라믹학회지
• /
• 제50권1호
• /
• pp.1-17
• /
• 2013

Since their first discovery, carbon nanotubes (CNTs) have become a material central to the field of nanotechnology. Owing to their splendid physical, structural and chemical properties, they have the potential to impact a wide range of applications, including advanced ceramics, nanoelectronic devices, nanoscale sensors, solar cells, battery electrodes, and field emitters. This review summarizes the synthetic methods of preparing CNTs and focuses on the chemical vapor deposition (CVD) method, especially catalytic CVD. In order to stabilize and disperse the catalyst nanoparticles (NPs) during synthesis, zeolite was implemented as the template to support metal-containing NPs, so that both CNTs in the bulk and on a 2D substrate were successfully synthesized. Despite more challenges ahead, there is always hope for widespread ever-new applications for CNTs with the development of technology.

• 한국세라믹학회지
• /
• 제45권9호
• /
• pp.518-523
• /
• 2008

The mechanical properties of silicon carbide deposited by chemical vapor deposition process onto a graphite substrate are studied using nanoindentation techniques. The silicon carbide coating was fabricated in a chemical vapor deposition process with different microstructures and thicknesses. A nanoindentation technique is preferred because it provides a reliable means to measure the mechanical properties with continuous load-displacement recording. Thus, a detailed nanoindentation study of silicon carbide coatings on graphite structures was conducted using a specialized specimen preparation technique. The mechanical properties of the modulus, hardness and toughness were characterized. Silicon carbide deposited at $1300^{\circ}C$ has the following values: E=316 GPa, H=29 GPa, and $K_c$=9.8 MPa $m^{1/2}$; additionally, silicon carbide deposited at $1350^{\circ}C$ shows E=283 GPa, H=23 GPa, and $K_c$=6.1 MPa $m^{1/2}$. The mechanical properties of two grades of SiC coating with different microstructures and thicknesses are discussed.

• 한국세라믹학회지
• /
• 제34권3호
• /
• pp.249-256
• /
• 1997

100-500KHz범위의 주파수전원을 인가하여 발생한 플라즈마를 이용하여 질화붕소(boron nitride)막의 합성시 육방정상(hexagonal phase)과 입방정상(cubic phase)의 생성거동을 관찰하였다. BCl3와 NH3를 붕소와 질소의 공급기체로 선택하였고 Ar과 수소를 carrier기체로 사용하였다. 합성변수로는 플라즈마전원의 전압, 기판의 bias, 합성압력, 기체의 조성, 기판의 온도이었는데, 합성된 박막은 FT-IR결과로부터 육방정과 입방정의 혼합상으로 나타났고, 각 상의 분률은 변수의 크기에 의존하였다. TEM분석결과 육방정으로만 구성된 박막은 비정질상으로 이루어졌으며, 입방정과 육방정의 혼합상의 경우는 비정질기지상에 수십 nanometer크기의 입방정입자가 분산된 구조를 하고 있었다.

• 한국세라믹학회지
• /
• 제41권9호
• /
• pp.653-656
• /
• 2004

(110) 배향 TiO$_2$ 단결정 위에 성장시킨 CrO$_2$(110) 박막의 결정 구조, 미세구조와 자기적 특성의 상관 관계에 대해 연구하였다. 소스 물질로는 CrO$_3$ 분말을 사용하였으며, 열분해 화학증착법으로 CrO$_2$박막을 형성하였다. (110) 배향된 TiO$_2$루타일 단결정 위에 형성된 CrO$_2$ 박막은 (110) 방향으로 우선 배향되었고, 미세구조적으로 평활한 박막을 형성하였다. 흘려주는 산소량이 많을수록 CrO$_2$ 박막의 두께가 두꺼워지고 저항치가 낮았으며, 음의 자기저항치의 변화 및 자기 이력 곡선에서 보자력과 잔류 자화 값이 감소하는 경향을 보였다.

• 한국세라믹학회지
• /
• 제33권5호
• /
• pp.514-518
• /
• 1996

Sb doped SnO2(ATO: Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using an oxide target and the electrical characteristics of ATO films were investigated. The experimen-tal conditions are as follows :Ar flow rate ; 0~100 sccm deposition tempera-ture ; 250~40$0^{\circ}C$ DC sputter powder ; 150~550W and sputteing pressure ; 2~7 mTorr, The thickness of depositied ATO films were 600$\AA$~1100 $\AA$ ranges. The resistivity of ATO films was decreased due to the increase of the crystallinity of ATO films with deposition temperature. The decrease of carrier concentration of films with the increase of oxygen flow rate and working pressure is responsible for the increase of resistivity. Increasing of sputtering power raised the resistivity of films by decreasing the carrier mobility.