• 제목/요약/키워드: CeO2

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Magnetroresistance Effect of $Fe/CeO_{2}Fe_{75}Co_{25}$ Tunnel Junctions ($Fe/CeO_{2}Fe_{75}Co_{25}$ 터널접합의 잔기저항효과)

  • 이창호;김익준
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.8
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    • pp.688-693
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    • 2001
  • A series of Fe/CeO$_2$/Fe$_{75}$Co$_{25}$ tunnel junctions (Magnetic Tunnel Junction, MTJ) having CeO$_2$ barrier layers from 30 to 90$\AA$ in thickness were prepared by ion beam sputtering (IBS) method. In order to compare the properties of MTJs, Fe/Al oxide/Fe-Co tunnel junctions were also prepared. Some junctions with a CeO$_2$ barrier layer showed the ferromagnetic tunneling effect and the highest MR ratio at room temperature was 5%. The electric resistance of junctions with a CeO$_2$ barrier layer was higher that that of junctions with an Al oxide barrier. On the other hand, The interface analysis of the Fe/CeO$_2$ bilayer was conducted by means of X-ray photoelectron spectroscopy (XPS). It was found that CeO$_2$ was decomposed to Ce and $O_2$ during sputtering, and Fe was oxidized with these decomposed $O_2$ molecules. The reduction of both electric resistance and MR ratio may be associated with the decomposed Ce in the barrier layer.r.r.

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A Study on the Ceria Stabilized Tetragonal Zirconia Polycrystals (Ce-TZP) (IV) ; Effect of MgO Addition on 12 Ce-TZP Ceramics (CeO2 안정화 정방정 Zirconia 다결정체(Ce-TZP)에 관한 연구(IV) : 12 Ce-TZP 세라믹스에 미치는 MgO 첨가 영향)

  • 김문일;박정현;강대석;이현권;문성환
    • Journal of the Korean Ceramic Society
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    • v.27 no.2
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    • pp.233-243
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    • 1990
  • For theinvestigation of MgO addition effect on 12Ce-TZP ceramics, MgO-CeO2-ZrO2 ceramics was fabricated using commercial powders under sintering condition of 130$0^{\circ}C$-1$600^{\circ}C$ for 2hr. Fully tetragonal phase could be obtained by proper heat treatment and MgO addition amount. Minor cubic phase was appeared in relatively high MgO content composition at each sintering temperature. As alloying amount of MgO increased, tetragonal stability increased and grain size decreased. Grain size dependence on MgO content was verified by SEM observation of fractured surface. Surface bloating was observed from the 2 m/o to 6m/o in the temperature range of 150$0^{\circ}C$ to 1$600^{\circ}C$. In spite of very porous microstructure owing to surface bloating, 100% TZP could be maintained in 2.0m/o MgO composition by heat treatment of 150$0^{\circ}C$. This result indicated that MgO was more powerful stabilizer than CeO2. Mechanical proprties of MgO-CeO2-ZrO2 ceramics were consistent with the stability observation of tetragonal phase very well.

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Effect of solvent and precursor on the CeO2 nanoparticles fabrication (CeO2 나노 분말 합성에 미치는 용매 및 전구체의 영향)

  • Ock, Ji-Young;Son, Jeong-Hun;Bae, Dong-Sik
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.28 no.3
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    • pp.118-122
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    • 2018
  • Ceria ($CeO_2$) is a rare earth oxide, which has been widely investigated to improve the property. It is important to increase the surface area of $CeO_2$, because high surface area of $CeO_2$ can improve the catalytic ability. $CeO_2$ nanoparticles were synthesized by a solvothermal process. A discussion on the influence of solvent ratio and precursors on $CeO_2$ nanoparticles was performed. The size and degree of the agglomeration of the synthesized $CeO_2$ could be tuned by controlling those parameters. The average size and distribution of prepared $CeO_2$ powders was in the range of 3 to 13 nm and narrow, respectively. The XRD pattern showed that the synthesized $CeO_2$ powders were crystalline with cubic phase of $CeO_2$. The average particle size was calculated by Scherrer equation and FE-TEM images. The morphology of the synthesized $CeO_2$ particle was objected using FE-TEM and FE-SEM. Specific surface area of the synthesized $CeO_2$ was determined using BET (Brunauer-Emmett-Teller) equation.

Powder Synthesis and Membrane Deposition of BaCe0.9Y0.1O2.95 and SrCe0.9Y0.1O2.95 System for Hydrogen Separation Application (수소분리용 BaCe0.9Y0.1O2.95 및 SrCe0.9Y0.1O2.95 분말 합성 및 분리막 증착)

  • Kang, Kyung-Min;Yun, Young-Hoon
    • Journal of Hydrogen and New Energy
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    • v.22 no.6
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    • pp.759-764
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    • 2011
  • Mixed-conducting oxide powders, $BaCe_{0.9}Y_{0.1}O_{2.95}$ (BCY) and $SrCe_{0.9}Y_{0.1}O_{2.95}$ (SCY) powders have been prepared by a solid-state reaction method. Xray diffraction patterns of the prepared powders showed the sharp peaks of the $BaCe_{0.9}Y_{0.1}O_{2.95}$ and $SrCe_{0.9}Y_{0.1}O_{2.95}$ phases. The oxide powders that were prepared by attrition milling showed rather large particles and severe necking between particles in FE-SEM images as well as residual reactant ($BaCO_3$) and secondary phases ($SrCeO_3$ and $CeO_2$) in XRD patterns. The oxide powders prepared using ball milling showed particles under approximately 500 nm and typical XRD patterns of the $BaCe_{0.9}Y_{0.1}O_{2.95}$ and $SrCe_{0.9}Y_{0.1}O_{2.95}$ phases. Ceramic membranes of the $BaCe_{0.9}Y_{0.1}O_{2.95}$ and $SrCe_{0.9}Y_{0.1}O_{2.95}$ phases were fabricated by the aerosol deposition method using the oxide powders synthesized.

A Study on the Luminescence Properties of LiGd9(SiO4)6O2:Ce3+ (LiGd9(SiO4)6O2:Ce3+ 형광 특성 연구)

  • Jin, Seongjin
    • Journal of the Korean Society of Radiology
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    • v.9 no.3
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    • pp.169-174
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    • 2015
  • $LiGd_9(SiO_4)_6O_2:Ce^{3+}$ phosphors were synthesized by solid-state reaction method. The structural characteristic was investigated by X-ray powder diffraction analysis. The emission and excitation spectra of the $Ce^{3+}$ ions doped $LiGd_9(SiO_4)_6O_2$ phosphors were obtained under the UV excitation. The emission spectra of $LiGd_9(SiO_4)_6O_2:Ce^{3+}$ shows the band at 410 nm corresponding to the $^2F_{5/2}$ and $^2F_{7/2}$ states of $Ce^{3+}$. The red shift of $Ce^{3+}$ emission is found as the $Ce^{3+}$ concentration increases, which could be explained by the change in crystal-field symmetry and strength with increasing $Ce^{3+}$ concentration. Fluorescence decay time of $Ce^{3+}$ was about 20 ns. When the concentration of $Ce^{3+}$ increases life time was slightly reduced.

The study on the dry etching characteristics of $CeO_2$ thin films ($CeO_2$ 박막의 건식 식각 특성 연구)

  • Oh, Chang-Seck;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05b
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    • pp.84-87
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    • 2001
  • In this study, $CeO_2$ thin films were etched with a $CF_4/Ar$ gas combination in inductively coupled plasma (ICP), The maximum etch rate of $CeO_2$ thin films is $270{\AA}/min$under $CF_4/(CF_4+Ar)$ of 0.2, 600 W/-200 V, 15 mTorr, and $25^{\circ}C$. The selectivities of $CeO_2$ to PR and SBT are 0.21, 0.25. respectively. The surface reaction of the etched $CeO_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F, Compounds such as $Ce-F_x$ are remains on the surface of $CeO_2$ thin films. Those products can be removed by Ar ion bombardment effect, The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of $Ce-F_x$ thin films. The etch profile of over-etched $CeO_2$ films with the $0.5 {\mu}m$ line was approximately $65^{\circ}$.

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THE PARTIAL COMBUSTION OF METHANE TO SYNGAS OVER PRECIOUS METALS AND NICKEL CATALYSTS SUPPORTED ON -γAL2O3 AND CEO2

  • Seo, Ho-Joon
    • Environmental Engineering Research
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    • v.10 no.3
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    • pp.131-137
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    • 2005
  • The catalytic activity of precious metals(Rh, Pd, Pt) and nickel catalysts supported on ${\gamma}-Al_2O_3\;and\;CeO_2$ in the partial combustion of methane(PCM) to syngas was investigated based on the product distribution in a fixed bed now reactor under atmospheric condition and also on analysis results by SEM, XPS, TPD, BET, and XRD. The activity of the catalysts based on the syngas yield increased in the sequence $Rh(5)/CeO_2{\geq}Ni(5)/CeO_2>>Rh(5)/Al_2O_3>Pd(5)/Al_2O_3>Ni(5)/Al_2O_3$. Compared to the precious catalysts, the syngas yield and stability of the $Ni(5)/CeO_2$ catalyst were almost similar to $(5)/CeO_2$ catalyst, and superior to these of any other catalysts. The syngas yield of $Ni(5)/CeO_2$ catalyst was 90.66% at 1023 K. It could be suggested to be the redox cycle of the successive reaction and formation of active site, $Ni^{2-}$ and the lattice oxygen, $O^{2-}$ produced due to reduction of $Ce^{4-}$ to $Ce^{3-}$.

Mechanical Properties of $Zr(Y,Ce)O_2$ TZP After Aging in Hydrothermal Conditon ($Zr(Y,Ce)O_2$ TZP의 수열분위기 시효후의 기계적 성질)

  • 손영국;박홍채
    • Journal of the Korean Ceramic Society
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    • v.36 no.12
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    • pp.1390-1395
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    • 1999
  • Zr(Y,Ce)O2 TZP ceramics were prepared by sintering compacts of 3 mol% Y2O3-TZP(3Y-TZP) powders with different amount of 12 mol% CeO2-TZP(12Ce-TZP) in air at 140$0^{\circ}C$ for 2 h. The phase changes microstructure and mechanical properties of Zr(Y. Ce)O2 TZP after hydrothermal aging(20$0^{\circ}C$ 5h) were investigated. Although an addition of 12Ce-TZP accelerated the grain growth of Zr(Y, Ce)O2 TZP it restrained the transformation of tetragonal to the monoclinic phase during aging. The degradation in mechanical properties of sintered bodies was governed by the formed monoclinic phase and chemical composition. Induced Vickers indentation crack was propagated intergranually. From SEM observation of the fracture surfaces the pull-out of individual grain was confirmed.

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A Study on the Etching Characteristics of $CeO_2$ Thin Films using inductively coulped $Cl_2/Ar$ Plasma (유도 결합 플라즈마($Cl_2/Ar$)를 이용한 $CeO_2$ 박막의 식각 특성 연구)

  • 오창석;김창일;권광호
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2000.11a
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    • pp.29-32
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    • 2000
  • Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$to YMnO$_3$was 1.83. As a XPS analysis, the surface of etched CeO$_2$thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

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A Study on the Etching Characteristics of $CeO_2$ Thin Films using inductively coupled $Cl_2$/Ar Plasma (유도 결합 플라즈마($Cl_2$/Ar)를 이용한 $CeO_2$ 박막의 식각 특성 연구)

  • 오창석;김창일;권광호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.29-32
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    • 2000
  • Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$ thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$ film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$ thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$ to YMnO$_3$ was 1.83. As a XPS analysis, the surface of etched CeO$_2$ thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

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