• 한국초전도ㆍ저온공학회논문지
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• 제6권3호
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• pp.27-32
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• 2004

High temperature superconducting coated conductor has a structure of /< superconducting layer>//. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is CeO$_2$(cap layer)/YSZ(diffusion barrier layer)/CeO$_2$(seed layer). Evaporation technique is used for the CeO$_2$ layer and DC reactive sputtering technique is used for the YSZ layer, A chamber was set up specially for DC reactive sputtering, Detailed features are as following. A separator divided the chamber into two halves a sputtering chamber and a reaction chamber. The argon gas for sputtering target elements flows out of the cap of sputtering gun, and water vapor for reaction with depositing species spouts near the substrate. Turbo pump is connected with reaction chamber. High speed deposition of YSZ film could be achieved in the chamber. Detailed deposition conditions (temperature and partial pressure of reaction gas) were investigated for the rapid growth of high quality YSZ film.

• 마이크로전자및패키징학회지
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• 제22권4호
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• pp.77-82
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• 2015

To increase the performance of solid oxide fuel cell operating at intermediate temperature ($600^{\circ}C{\sim}800^{\circ}C$), $Sm_{0.2}Ce_{0.8}O_2$ (SDC) thin layer was applied to the $La_{0.8}Sr_{0.2}Mn_{0.8}Cu_{0.2}O_3$ (LSMCu) cathode by sol-gel coating method. The SDC was employed as a diffusion barrier layer on the yttria-stabilized zirconia(YSZ) to prevent the interlayer by-product formation of $SrZrO_3$ or $La_2Zr_2O_7$. The by-products were hardly formed at the electrolyte-cathode interlayer resulting to reduce the cathode polarization resistance. Moreover, SDC thin film was coated on the cathode pore wall surface to extend the triple phase boundary (TPB) area.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.139-140
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• 2008

최근 누설전류를 줄이기 위해서 게이트 산화막에 대한 연구가 활발히 진행되고 있다. 게이트 산화막에 유전상수가 큰 high-k 물질을 적용시킴으로서 누설 전류를 줄일 수 있어 특성의 향상을 가져다 줄 수 있다. 본 연구에서는 여러 high-k 물질중 $CeO_2$를 블로킹 산화막에 적용시켰다. $CeO_2$는 높은 유전상수를 가지고 있고 실리콘과 화학적으로 안정한 물질이어서 좋은 특성을 기대할 수 있다. 본 연구에서는 Al/$CeO_2/SiN_x/SiO_xN_y$/Si 의 MINOS 구조를 만들고 $CeO_2$ 두께변화에 따른 MINOS 구조의 전기적인 특성을 측정하였다. 그 결과 $CeO_2$의 박막 두께가 40nm 일 때 더 좋은 특성이 나타난다.

• 한국재료학회지
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• 제9권1호
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• pp.73-80
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• 1999

The effect of alloy compositions of the bond coating on the plasma sprayed-thermal barrier coatings was investigated. The performance of the coating composed of Rene80/NiCrAl/ZrO$_2$-CeO$_2$-Y$_2$O$_3$ and Rene80/CoNiCrAlY/ZrO$_2$-CeO$_2$-Y$_2$O$_3$was evaluated by isothermal and thermal cyclic test in an ambient atmosphere at 115$0^{\circ}C$. The failure of Rene80/NiCrAl/ZrO$_2$-CeO$_2$-Y$_2$O$_3$ coatings was occurred at the bond coating/ceramic coating interface while Rene80/CoNiCrAlY/ZrO$_2$-CeO$_2$-Y$_2$O$_3$ coating was failed at the substrate/bond coating interface after thermal cyclic test. The lifetime of Rene80/NiCrAl/ZrO$_2$-CeO$_2$-Y$_2$O$_3$coatings was longer than Rene80/CoNiCrAlY/ZrO$_2$-CeO$_2$-Y$_2$O$_3$coating. The oxidation rate of the NiCrAl bond coating examined by TGA was lower than CoNiCrAlY bond coatings. In summary, these results suggest that Rene80/CoNiCrAlY/ZrO$_2$-CeO$_2$-Y$_2$O$_3$system as thermal barrier coating be not suitable considering the durability of the coating layer for high temperature oxidation and thermal stress.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.58-62
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• 1999

We fabricated a new hairpin type HTS 2-pole microstrip Bandpass filter to operate at 5.8GHz. The fabrication method was pulsed laser deposition and YBCO films were deposited on ${\alpha}$-A1$_2O_3$ substrates with a CeO$_2$ thin layer as a buffer layer. We developed a new style hairpin type filter by using interdigitide innerpole. Compared to the saute size regular hairpin type filters, our filter had a lower center frequency, bandwidth and loss by an amount of 14.5%, 29.6%, 0.5488dB, respectively. The size of the filters were 13.7${\times}$3.3mm. We did simulations on the several types of band pass filters by using HFSS and serenade. We measured growth rate and Tc of YBCO films grown on CeO$_2$/ ${\alpha}$-A1$_2O_3$ substrates which were rotated while growing films.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.287-290
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• 2003

For microwave device applications, c-axis oriented high temperature superconducting YBa$_2$Cu$_3$O$_{7-{\delta}}$ (HTS-YBCO) epitaxial thin films on the r-cut sapphire substrate(Al$_2$O$_3$) were prepared. In order to reduce the lattice mismatch with a substrate and to enhance the crystallity of HTS thin films, CeO$_2$ buffer layer on the r-cut sapphire substrate was grown by the RF-magnetron sputtering. The YBCO films on the CeO$_2$ buffer layer were deposited using the pulsed-laser deposition (PLD) method. These HTS YBCO /CeO$_2$/Al$_2$O$_3$ multilayer thin films(30 $\times$ 30 mm$^2$) routinely exhibited a critical temperature(T$_{c}$) of 89 K from the R-T measurement. Using HTS YBCO/CeO$_2$ /Al$_2$O$_3$ multilayer thin film. We fabricated and characterized the microwave passive devices (planar type filters) with cryopack-age such as the coupled -line type low-pass filter (LPF) and the open-loop meander type bandpass filter (BPF).filter (BPF).).

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.695-699
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• 2001

Cerium dioxide (CeO$_2$) was used as the intermediate layer between the ferroelectric thin film and Si substrate in a metal-ferroelectric-semiconductor field effect transistor (MFSFET), to improve the interface property by preventing the interdiffusion of the ferroelectric material and the Si substrate. In this study, CeO$_2$ thin films were etched with a CF$_4$/Ar gas combination in inductively coupled plasma (ICP). The maximum etch rate of CeO$_2$ thin films was 270$\AA$/min under CF$_4$/(CF$_4$+Ar) of 0.2, 600 W/-200V, 15 mTorr, and $25^{\circ}C$. The selectivities of CeO$_2$ to PR and SBT were 0.21, 0.25, respectively. The surface reaction in the etching of CeO$_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F. Compounds such as Ce-F$_{x}$ remains on the surface of CeO$_2$ thin films. Those products can be removed by Ar ion bombardment. The results of secondary ion mass spectrometry (SIMS) were consistent with those of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of CeO$_2$ thin films. The etch profile of over-etched CeO$_2$ films with the 0.5${\mu}{\textrm}{m}$ line was approximately 65$^{\circ}$.>.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1007-1010
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• 2004

We report crystallization of a-Si using XeCl excimer laser annealing [1] on the plastic substrate. We tried to obtain higher crystallinity as the effect of $CeO_2$ seed layer patterned. Also, we tried to control the direction of crystallization growth of silicon layer for lateral growth as the type of $CeO_2$ pattern. This crystallization method plays an important role in low temperature poly-Si (LTPS) [2] process and flexible display.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.113-116
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• 2003

The growth properties of $Y_2$O$_3$ and CeO$_2$ films for the buffer layers on Ni tapes were studied comparatively. The water vapor larger than 2$\times$10$^{-5}$ Torr and the substrate temperature higher than $700^{\circ}C$ were required for the proper growth of $Y_2$O$_3$ films, while the upper limits of the water vapor and the lower limit of the substrate temperatures for the proper growth of CeO$_2$ were 1$\times$10$^{-5}$ Torr and 50$0^{\circ}C$, respectively. These imply that the windows of the growth conditions of CeO$_2$ are wider than those of $Y_2$O$_3$. However the formation of cracks in CeO$_2$ films were its disadvantage, while $Y_2$O$_3$ showed no cracks. PACS. No 85.25.K, 81.15.A.

• 세라미스트
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• 제21권4호
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• pp.378-387
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• 2018

The optimal fabrication conditions for $Gd_{0.1}Ce_{0.9}O_{2-{\delta}}$(GDC) buffer layer and $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-{\delta}}$ (LSCF) cathode on 1mol% $CeO_2-10mol%\;Sc_2O_3$ stabilized $ZrO_2$ (CeScSZ) electrolyte were investigated for application of IT-SOFCs. GDC buffer layer was used in order to prevent undesired chemical reactions between LSCF and CeScSZ. These experiments were carried out with $5{\times}5cm^2$ anode supported unit cells to investigate the tendencies of electrochemical performance, Microstructure development and interface reaction between LSCF/GDC/CeScSZ along with the variations of GDC buffer layer thickness, sintering temperatures of GDC and LSCF were checked, respectively. Electrochemical performance was analyzed by DC current-voltage measurement and AC impedance spectroscopy. Microstructure and interface reaction were investigated by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). Although the interfacial reaction between these materials could not be perfectly inhibited, We found that the cell, in which $6{\mu}m$ GDC interlayer sintered at $1200^{\circ}C$ and LSCF sintered at $1000^{\circ}C$ were applied, showed good interfacial adhesions and effective suppression of Sr, thereby resulting in fairly good performance with power density of $0.71W/cm^2$ at $800^{\circ}C$ and 0.7V.