• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$ thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$ film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$ thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$ to YMnO$_3$ was 1.83. As a XPS analysis, the surface of etched CeO$_2$ thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 춘계학술발표대회 및 제10회 신소재 심포지엄 논문개요집
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• pp.26.1-26.1
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• 2006

• 한국수소및신에너지학회논문집
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• 제23권6호
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• pp.654-659
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• 2012

The interest in water gas shift (WGS) reaction has grown significantly, as a result of the recent advances in fuel cell technology and the need to develop small-scale fuel processors. Recently, researchers have tried to overcome the disadvantages of the commercial WGS catalysts. As a consequence, supported Pt catalysts have attracted a lot of researchers due to high activity and stability for WGS at low temperatures. In this study, $Pt-Na/Ce_{(1-x)}Zr_{(x)}O_2$ catalysts with various Ce/Zr ratio have been applied to WGS at a gas hourly space velocity (GHSV) of $45,515h^{-1}$. According to TPR patterns of $Pt-Na/Ce_{(1-x)}Zr_{(x)}O_2$ catalysts, the reducibility increases with decreasing the $ZrO_2$ content. As a result, Cubic structure $Pt-Na/Ce_{(1-x)}Zr_{(x)}O_2$ catalysts exhibited higher CO conversion than tetragonal structure $Pt-Na/Ce_{(1-x)}Zr_{(x)}O_2$ catalysts. Expecially, Pt-Na/$CeO_2$ exhibited the highest CO conversion as well as 100% selectivity to $CO_2$. Moreover, Pt-Na/$CeO_2$ catalyst showed relatively stable activity with time on stream. The high activity of cubic structure Pt-Na/$CeO_2$ catalyst was correlated to its higher oxygen storage capacity (OSC) of $CeO_2$ and easier reducibility of Pt/$CeO_2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1278-1282
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• 2004

수열처리법으로 nano-sized $CeO_2$ 입자를 $Al_3O_3$ 입자의 표면에 균일하게 코팅하여 $AL_2O_3/O_2$ composite 연마 입자를 제조하었다. 제조된 $Al_2O_3\CeO_2$ composite 입자의 뭍성을 TEM, XRD, zeta potential analyzer 및 particle size analyzer로 측징하였다. $Al_2O_3/CeO_2$ composite 입자와 구성된 슬러리와 비교 시료로서 $Al_2O_3$와 $CeO_2$ 입자를 혼합한 슬러리를 사용하여 thermal oxide film에 대한 연마특성을 평가하였다. 연마슬러리에 포함된 $A1_2O_3/CeO_2$ composite 입자와 $Al_2O_3$와 $CeO_2$ 혼합입자에서 나노 크기의 세리아 입자가 sub-micron 크기의 알루미나 입자의 표면에 균일하게 코팅되므로서 $Al_2O_3$ 단일 성분의 슬러리에 비해 removal rate(RR)는 106 nm/min, WIWNU는 $8\sim9%$, roughness는 $2.6{\AA}$의 향상된 연마 특성을 나타내었다. 알루미나 입자의 불규칙한 형상 때문에 $Al_2O3/CeO_2$ composite 슬러리와 $Al_2O_3$ 와 $CeO_2$ 혼합슬러리의 연마 특성이 비슷한 수준을 나타내었다.

• 한국초전도ㆍ저온공학회논문지
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• 제6권4호
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• pp.1-4
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• 2004

Three group samples with difference thickness of $CeO_2$ capping layer deposited by PLD were studied. Among them, one group $CeO_2$ films were deposited on stainless steel tape coated with IBAD- YSZ and $CeO_2$ buffer layer ($CeO_2$/IBAD-YSZ/SS); other two groups of $CeO_2 YSZ Y_2O_3$multi-layer were deposited on NiW substrates for fabrication of YBCO coated conductor through RABiTS approach. The pulsed laser deposition (PLD) and DC magnetron sputtering were employed to deposit these buffer layers. On the top of buffer layer, YBCO film was deposited by PLD. The effect of thickness of $CeO_2$ film on the texture of $CeO_2$ film and critical current density ($J_c$) of YBCO film were analyzed. For the case $CeO_2$ on $CeO_2$/IBAD-YSZ/SS, there was a self-epitaxy effect with the increase of $CeO_2$ film. For $YSZ/Y_2O_3$ NiW which was deposited by PLD or DC magnetron sputtering, there is not self-epitaxy effect. However, the capping layer of $CeO_2$ film deposited by PLD improved the quality of buffer layer for $YSZ/Y_2O_3$ which was deposited by DC magnetron sputtering, therefore increased the $J_c$ of YBCO film.

• 한국세라믹학회지
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• 제38권5호
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• pp.418-423
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• 2001

16 mole%의 CeO$_2$가 고용된 Ce-TZP 소결체 사이에 140~240$mu extrm{m}$ 두께의 Ce-TZP-5~30 vol% $Al_2$O$_3$중간층이 삽입된 층상복합체를 분말건식가압성형법에 의해 제조하였다. 소결온도는 $Al_2$O$_3$가 5~30 vol.% 첨가될 때 90% 이상의 소결밀도를 얻을 수 있도록 1$600^{\circ}C$로 정하였다. 이러한 3층 복합체에서 바깥의 Ce-TZP 지역에서의 파괴 형태는 입내파괴를 보여주었지만 $Al_2$O$_3$가 함유된 중간층에서는 입계파괴가 전이되면서 인성증가를 보여주었다. 이러한 층상 복합체의 경우 중간 층에 들어가는 Ce-TZP 중의 $Al_2$O$_3$함량이 30 vol.% 정도에 이르면 층간의 서로 다른 소결밀도 및 수축율, 열팽창계수 때문에 층간 소결 결함이 생겨 층간에서 균열의 전파가 큰 영향을 받음을 알 수 있었다. 반면 중간층의 $Al_2$O$_3$함량이 적을 경우 층간 결함이 생기지 않아 층간에서 균열의 전파가 별 영향을 받지 않음을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• 한국세라믹학회지
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• 제38권9호
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• pp.794-798
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• 2001

Sol-gel법에 의하여 $Y_{2-x}SiO_5:Ce_x^{3+}$ (x=0.002∼0.04) 형광체를 제조하고 발광특성을 평가하였다. 800$^{\circ}$C에서 하소하였을 때는 무정형의 결정상이 나타났지만 1000$^{\circ}$C 이상에서는 $X_2$ type의 $Y_2SiO_5$ 결정상을 얻었다. 230∼360nm에서 형광체 모체의 광흡수가 일어났으며 300∼400nm에서 Ce 첨가로 인한 형광체의 광흡수가 관찰되었다. 436nm에서 최대의 발광 spectrum을 나타내었으며 $Ce^{3+}$ 함량을 0.025mol 첨가 시 $Y_{2-x}SiO_5:Ce_x^{3+}$ 형광체는 최대의 cathodoluminescence 특성과 CIE1931색 좌표 상에서 x=0.161, y=0.124의 색을 나타내었다.

• Korean Chemical Engineering Research
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• 제62권1호
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• pp.125-131
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• 2024

본 연구에서는 제조된 Ni/Ce_xZr_1-xO₂ 촉매를 허니컴 구조의 금속 모노리스 구조체 표면에 코팅하여 수증기 메탄 개질 반응에 대한 활성을 연구하였다. Ce/Zr의 비율을 달리한 지지체를 합성하여 수증기 메탄 개질 반응에서의 거동을 확인하였으며, Ni 함량이 촉매 활성에 미치는 영향을 분석하기 위해 다양한 Ni 함량의 촉매를 제조하였다. 촉매의 특성은 XRD, BET, TPR 및 SEM으로 분석하였으며 TPR 분석에서 활성 금속 Ni이 CeO₂-ZrO₂ 혼합물 지지체와 강한 상호작용으로 Ni-Ce-Zr 산화물을 형성하였음을 나타내었다. 15 wt% Ni/Ce_0.80Zr_0.20O₂ 촉매는 수증기 메탄 개질 반응에서 가장 높은 활성 및 안정성을 보였다. 우수한 산소저장 및 공여 특성의 CeO₂와 열적 특성의 ZrO₂를 복합소재로 제조하여 활성과 안정성이 향상된 촉매를 합성하였다.

• Progress in Superconductivity
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• 제7권2호
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• pp.120-129
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• 2006

We comparatively studied the epitaxial growth conditions of $CeO_2$ and $Y_2O_3$ thin buffers on textured Ni tapes using rf magnetron sputtering and investigated the feasibility of getting a single mixture layer or sequential layers of $CeO_2$ and $Y_2O_3$ for more simplified buffer architecture. All the buffer layers were first deposited using the reducing gas of $Ar/4%H_2$ and subsequently the reactive gas mixture of Ar and $O_2$, The crystalline quality and biaxial alignment of the films were investigated using X-ray diffraction techniques (${\Theta}-2{\Theta},\;{\phi}\;and\;{\omega}\;scans$, pole figures). The $CeO_2$ single layer exhibited well developed (200) epitaxial growth at the condition of $10%\;O_2$ below an $450^{\circ}C$, but the epitaxial property was decreased with increasing the layer thickness. $Y_2O_3$ seldom showed optimum condition for (400) epitaxial growth. The sequential architecture of $CeO_2/Y_2O_3/CeO_2$ having good epitaxial property was achieved by sputtering at a temperature of $700^{\circ}C$ on the initial $CeO_2$ bottom layer sputtered at $400^{\circ}C$. Cracking of the sputtered buffer layers was seldom observed except the double layer structure of $CeO_2/Y_2O_3$.