• 한국전기전자재료학회논문지
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• 제14권8호
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• pp.688-693
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• 2001

A series of Fe/CeO$_2$/Fe$_{75}$Co$_{25}$ tunnel junctions (Magnetic Tunnel Junction, MTJ) having CeO$_2$ barrier layers from 30 to 90$\AA$ in thickness were prepared by ion beam sputtering (IBS) method. In order to compare the properties of MTJs, Fe/Al oxide/Fe-Co tunnel junctions were also prepared. Some junctions with a CeO$_2$ barrier layer showed the ferromagnetic tunneling effect and the highest MR ratio at room temperature was 5%. The electric resistance of junctions with a CeO$_2$ barrier layer was higher that that of junctions with an Al oxide barrier. On the other hand, The interface analysis of the Fe/CeO$_2$ bilayer was conducted by means of X-ray photoelectron spectroscopy (XPS). It was found that CeO$_2$ was decomposed to Ce and $O_2$ during sputtering, and Fe was oxidized with these decomposed $O_2$ molecules. The reduction of both electric resistance and MR ratio may be associated with the decomposed Ce in the barrier layer.r.r.

• 한국세라믹학회지
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• 제27권2호
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• pp.233-243
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• 1990

For theinvestigation of MgO addition effect on 12Ce-TZP ceramics, MgO-CeO2-ZrO2 ceramics was fabricated using commercial powders under sintering condition of 130$0^{\circ}C$-1$600^{\circ}C$ for 2hr. Fully tetragonal phase could be obtained by proper heat treatment and MgO addition amount. Minor cubic phase was appeared in relatively high MgO content composition at each sintering temperature. As alloying amount of MgO increased, tetragonal stability increased and grain size decreased. Grain size dependence on MgO content was verified by SEM observation of fractured surface. Surface bloating was observed from the 2 m/o to 6m/o in the temperature range of 150$0^{\circ}C$ to 1$600^{\circ}C$. In spite of very porous microstructure owing to surface bloating, 100% TZP could be maintained in 2.0m/o MgO composition by heat treatment of 150$0^{\circ}C$. This result indicated that MgO was more powerful stabilizer than CeO2. Mechanical proprties of MgO-CeO2-ZrO2 ceramics were consistent with the stability observation of tetragonal phase very well.

• 한국결정성장학회지
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• 제28권3호
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• pp.118-122
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• 2018

Cerium oxide는 촉매의 효율을 증가하기 위해서는 비표면적이 높은 것이 필요하여 많은 연구가 되고 있다. 비표면적이 높은 세리아 나노 입자를 용매열 공정으로 합성하였다. 세리아 입자 형성에 전구체의 종류와 용매의 비율이 미치는 영향에 대하여 연구하였다. 합성된 세리아의 응집 및 크기를 제어할 수 있었다. 합성된 입자의 크기는 약 3~13 nm이고, 분포는 균일하였다. 합성된 세리아의 결정상은 X-선 회절 분석결과 cubic이고, 미세구조는 투과전자현미경과 주사전자현미경으로 분석하였다. 합성된 세리아 입자의 비표면적은 BET로 측정하였다.

• 한국수소및신에너지학회논문집
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• 제22권6호
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• pp.759-764
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• 2011

Mixed-conducting oxide powders, $BaCe_{0.9}Y_{0.1}O_{2.95}$ (BCY) and $SrCe_{0.9}Y_{0.1}O_{2.95}$ (SCY) powders have been prepared by a solid-state reaction method. Xray diffraction patterns of the prepared powders showed the sharp peaks of the $BaCe_{0.9}Y_{0.1}O_{2.95}$ and $SrCe_{0.9}Y_{0.1}O_{2.95}$ phases. The oxide powders that were prepared by attrition milling showed rather large particles and severe necking between particles in FE-SEM images as well as residual reactant ($BaCO_3$) and secondary phases ($SrCeO_3$ and $CeO_2$) in XRD patterns. The oxide powders prepared using ball milling showed particles under approximately 500 nm and typical XRD patterns of the $BaCe_{0.9}Y_{0.1}O_{2.95}$ and $SrCe_{0.9}Y_{0.1}O_{2.95}$ phases. Ceramic membranes of the $BaCe_{0.9}Y_{0.1}O_{2.95}$ and $SrCe_{0.9}Y_{0.1}O_{2.95}$ phases were fabricated by the aerosol deposition method using the oxide powders synthesized.

• 한국방사선학회논문지
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• 제9권3호
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• pp.169-174
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• 2015

본 연구는 $LiGd_9(SiO_4)_6O_2:Ce^{3+}$ 형광체를 고상법으로 합성하여 X선 회절 실험으로 결정화 정도와 인회석 구조를 확인하였다. $LiGd_9(SiO_4)_6O_2:Ce^{3+}$ 형광체의 $Ce^{3+}$이온의 농도 변화에 따른 여기 및 방출 스펙트럼과 수명시간을 측정하였다. 여기 스펙트럼에서 $Ce^{3+}$ 이온의 농도 증가에 따라 276 nm ($Gd^{3+}$ $^8S_{7/2}{\rightarrow}^6I{_J}$ 전이) 형광 세기가 감소하는 에너지 전달을 확인하였다. 방출 스펙트럼에서 $Ce^{3+}$ 이온의 농도 증가에 따라 결정장의 변화에 의해 410 nm($Ce^{3+}$ $^2F_{5/2}$ and $^2F_{7/2}$) 방출 밴드의 파장이 장파장 쪽으로 이동하는 특성을 확인하였으며 314 nm에서 $Gd^{3+}$에서 $Ce^{3+}$로의 에너지 전달로 인해 $Gd^{3+}$ 형광 방출 세기가 감소하는 것을 확인하였다. $LiGd_9(SiO_4)_6O_2:Ce^{3+}$ 형광체의 $Ce^{3+}$의 수명시간은 약 20 ns로 짧은 특성을 나타내었고 $Ce^{3+}$의 농도가 증가하면 수명시간이 수 ns 감소하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.84-87
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• 2001

In this study, $CeO_2$ thin films were etched with a $CF_4/Ar$ gas combination in inductively coupled plasma (ICP), The maximum etch rate of $CeO_2$ thin films is $270{\AA}/min$under $CF_4/(CF_4+Ar)$ of 0.2, 600 W/-200 V, 15 mTorr, and $25^{\circ}C$. The selectivities of $CeO_2$ to PR and SBT are 0.21, 0.25. respectively. The surface reaction of the etched $CeO_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F, Compounds such as $Ce-F_x$ are remains on the surface of $CeO_2$ thin films. Those products can be removed by Ar ion bombardment effect, The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of $Ce-F_x$ thin films. The etch profile of over-etched $CeO_2$ films with the $0.5 {\mu}m$ line was approximately $65^{\circ}$.

• Environmental Engineering Research
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• 제10권3호
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• pp.131-137
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• 2005

The catalytic activity of precious metals(Rh, Pd, Pt) and nickel catalysts supported on ${\gamma}-Al_2O_3\;and\;CeO_2$ in the partial combustion of methane(PCM) to syngas was investigated based on the product distribution in a fixed bed now reactor under atmospheric condition and also on analysis results by SEM, XPS, TPD, BET, and XRD. The activity of the catalysts based on the syngas yield increased in the sequence $Rh(5)/CeO_2{\geq}Ni(5)/CeO_2>>Rh(5)/Al_2O_3>Pd(5)/Al_2O_3>Ni(5)/Al_2O_3$. Compared to the precious catalysts, the syngas yield and stability of the $Ni(5)/CeO_2$ catalyst were almost similar to $(5)/CeO_2$ catalyst, and superior to these of any other catalysts. The syngas yield of $Ni(5)/CeO_2$ catalyst was 90.66% at 1023 K. It could be suggested to be the redox cycle of the successive reaction and formation of active site, $Ni^{2-}$ and the lattice oxygen, $O^{2-}$ produced due to reduction of $Ce^{4-}$ to $Ce^{3-}$.

• 한국세라믹학회지
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• 제36권12호
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• pp.1390-1395
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• 1999

Zr(Y,Ce)O2 TZP ceramics were prepared by sintering compacts of 3 mol% Y2O3-TZP(3Y-TZP) powders with different amount of 12 mol% CeO2-TZP(12Ce-TZP) in air at 140$0^{\circ}C$ for 2 h. The phase changes microstructure and mechanical properties of Zr(Y. Ce)O2 TZP after hydrothermal aging(20$0^{\circ}C$ 5h) were investigated. Although an addition of 12Ce-TZP accelerated the grain growth of Zr(Y, Ce)O2 TZP it restrained the transformation of tetragonal to the monoclinic phase during aging. The degradation in mechanical properties of sintered bodies was governed by the formed monoclinic phase and chemical composition. Induced Vickers indentation crack was propagated intergranually. From SEM observation of the fracture surfaces the pull-out of individual grain was confirmed.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.388-392
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• 2002

In this work, the etching of $CeO_2$ thin films has been performed in an inductively coupled $Ar/CF_4/Cl_2$ plasma. The highest etch rate of the $CeO_2$ thin film ws 250 ${\AA}/min$ and the selectivity of CeO$_2$to SBT was 0.4 at a 10% additive $Cl_2$ into Ar/($Ar+CF_4$)gas mixing ratio of 0.8. From result of X-ray photoelectron spectroscopy (XPS) analysis, there are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. During the etching of $CeO_2$ thin films in $Ar/CF_4/Cl_2$ plama, Ce-Cl and Ce-F bond is formed, and these prodcuts can be removed by the physical bombardment of Ar ions. The 10% additive $Cl_2$ into the Ar/($Ar+CF_4$)gas mixing ratio of 0.8 could enhance the reaction between Cl, F and Ce.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$to YMnO$_3$was 1.83. As a XPS analysis, the surface of etched CeO$_2$thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).