• Journal of Radiation Protection and Research
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• v.35 no.2
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• pp.81-84
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• 2010

A CSA(Charge Sensitive Amplifier) was designed and fabricated for application in a radiation detection system based on a semiconductor detector such as Si, SiC, CdZnTe and etc.. A fabricated hybrid.type CSA was evaluated by comparison with a commercially available CSA. A comparison was performed by using calculation of ENC (Equivalent Noise Charge) and by using energy resolutions of fabricated radiation detectors based on Si. In energy resolution comparison, a fabricated CSA showed almost the same performance compared with a commercial one. In this study, feasibility of a fabricated CSA was discussed.

• Nuclear Engineering and Technology
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• v.49 no.7
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• pp.1489-1494
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• 2017

The use of a room-temperature gamma spectrometer is an issue in environmental radiation monitoring. To monitor radionuclides released around a nuclear power plant, suitable instruments giving fast and reliable information are required. High-pressure xenon (HPXe) chambers have range of resolution and efficiency equivalent to those of other medium resolution detectors such as those using NaI(Tl), CdZnTe, and $LaBr_3:Ce$. An HPXe chamber could be a cost-effective alternative, assuming temperature stability and reliability. The CEA LIST actively studied and developed HPXe-based technology applied for environmental monitoring. Xenon purification and conditioning was performed. The design of a 4-L HPXe detector was performed to minimize the detector capacitance and the required power supply. Simulations were done with the MCNPX2.7 particle transport code to estimate the intrinsic efficiency of the HPXe detector. A behavioral study dealing with ballistic deficits and electronic noise will be utilized to provide perspective for further analysis.

• Bulletin of the Korea Photovoltaic Society
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• v.3 no.3
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• pp.18-31
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• 2017

박막 태양전지 기술은 현재 가장 큰 시장점유율을 보이고 있는 결정질 Si 태양전지의 차세대 후보로서 큰 관심을 받고 있다. 결정질 Si 태양전지보다 높은 효율로서, 저가로 생산할 수 있는 수준을 목표로 하여 $Cu(In,Ga)Se_2$ (CIGS) 를 비롯한 다양한 종류의 박막 태양전지들이 개발되고 있는데, 이 글에서는 최근에 범용성 초저가 박막 태양전지로 각광을 받고 있는 kesterite 박막 태양전지에 대해서 살펴보기로 한다. 가장 많이 연구되는 kesterite구조의 $Cu_2ZnSn(S,Se)_4$ (CZT(S,Se)) 박막 태양전지는 차세대 태양전지의 유력 후보군인 화합물태양전지 중에서 CdTe와 CIGS 그리고 새롭게 떠오르고 있는 페로브스카이트 등에 비해 범용 무독성 원소를 광흡수층으로 사용한다는 장점을 가지고 있지만 아직까지는 이들보다 효율이 낮아 상용화하기에는 좀 더 시간이 필요할 것으로 판단된다. CZT(S,Se)계 박막 태양전지의 기본적인 물성, 공정, 분석법 등을 알아보고 고효율을 달성하는 방법에 대하여 제시하고자 한다. 공정에 대한 상세한 최근 동향과 설명은 최근 한국공업화학회 소식지에 실린 강진규 박사의 리뷰논문을 참고하였다.

• Journal of Radiation Protection and Research
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• v.34 no.2
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• pp.65-68
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• 2009

Metal-semiconductor contact is very important for the operating property of semiconductor detector. $Cd_{0.96}$ $Zn_{0.04}$ Te semiconductor crystal was grown with Bridgman method, and the crystal was cut and polished. EPMA (Electron Probe Micro Analyzer) and ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analysis were done to obtain the chemical composition and impurity of the crystal. Metal contact was deposited with thermal evaporator on both sides of the crystal. Detectors with Au/CZT/Au and In/CZT/Au structure were made, and I-V curve and the energy spectrum were measured with the detectors. It could be seen that the detector with the In/CZT/Au structure has superior property than the detector with Au/CZT/Au structure when the crystal resistivity was low. However, the metal contact structure effect becomes low when the crystal resistivity was high.

• Analytical Science and Technology
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• v.35 no.2
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• pp.69-81
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• 2022

The method of measuring and classifying the energy category of neutrons directly using raw data acquired through a CZT detector is not satisfactory, in terms of accuracy and efficiency, because of its poor energy resolution and low measurement efficiency. Moreover, this method of measuring and analyzing the characteristics of low-energy or low-activity gamma-ray sources might be not accurate and efficient in the case of neutrons because of various factors, such as the noise of the CZT detector itself and the influence of environmental radiation. We have therefore developed an efficient method of analyzing radiation characteristics using a neutron and gamma-ray analysis algorithm for the rapid and clear identification of the type, energy, and radioactivity of gamma-ray sources as well as the detection and classification of the energy category (fast or thermal neutrons) of neutron sources, employing raw data acquired through a CZT detector. The neutron analysis algorithm is based on the fact that in the energy-spectrum channel of 558.6 keV emitted in the nuclear reaction ¹¹³Cd + ¹n → ¹¹⁴Cd + in the CZT detector, there is a notable difference in detection information between a CZT detector without a PE modulator and a CZT detector with a PE modulator, but there is no significant difference between the two detectors in other energy-spectrum channels. In addition, the gamma-ray analysis algorithm uses the difference in the detection information of the CZT detector between the unique characteristic energy-spectrum channel of a gamma-ray source and other channels. This efficient method of analyzing radiation characteristics is expected to be useful for the rapid radiation detection and accurate information collection on radiation sources, which are required to minimize radiation damage and manage accidents in national disaster situations, such as large-scale radioactivity leak accidents at nuclear power plants or nuclear material handling facilities.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.434-436
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• 2013

Ga-doped ZnO (GZO) was substitutes of the SnO2:F films on soda lime glass substrate in the photovoltaic devices such as CIGS, CdTe and DSSC due to good properties and low cost. However, it was reported that the electrical resistivity of GZO is unstable above $300^{\circ}C$ in air atmosphere. To improve thermal stability of GZO thin films at high temperature above $300^{\circ}C$ an $TiO_2$ thin film was deposited on the top of GZO thin films as a barrier layer by Pulsed Laser Deposition (PLD) method. $TiO_2$ thin films were deposited at various thicknesses from 25 nm to 100 nm. Subsequently, these films were annealed at temperature of $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$ in air atmosphere for 20 min. The XRD measurement results showed all the films had a preferentially oriented ( 0 0 2 ) peak, and the intensity of ( 0 0 2 ) peak nearly did not change both GZO (300 nm) single layer and $TiO_2$ (50 nm)/GZO (300 nm) double layer. The resistivity of GZO (300 nm) single layer increased from $7.6{\times}10^{-4}{\Omega}m$ (RT) to $7.7{\times}10^{-2}{\Omega}m$ ($500^{\circ}C$). However, in the case of the $TiO_2$ (50 nm)/GZO (300 nm) double layer, resistivity showed small change from $7.9{\times}10^{-4}{\Omega}m$ (RT) to $5.2{\times}10^{-3}{\Omega}m$ ($500^{\circ}C$). Meanwhile, the average transmittance of all the films exceeded 80% in the visible spectrum, which suggests that these films will be suitable for photovoltaic devices.

• Korean Journal of Materials Research
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• v.31 no.11
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• pp.619-625
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• 2021

Cu₂ZnSn(S,Se)₄ (CZTSSe) based thin-film solar cells have attracted growing attention because of their earth-abundant and non-toxic elements. However, because of their large open-circuit voltage (V_oc)-deficit, CZTSSe solar cells exhibit poor device performance compared to well-established Cu(In,Ga)(S,Se)₂ (CIGS) and CdTe based solar cells. One of the main causes of this large V_oc-deficit is poor absorber properties for example, high band tailing properties, defects, secondary phases, carrier recombination, etc. In particular, the fabrication of absorbers using physical methods results in poor surface morphology, such as pin-holes and voids. To overcome this problem and form large and homogeneous CZTSSe grains, CZTSSe based absorber layers are prepared by a sputtering technique with different RTA conditions. The temperature is varied from 510 ℃ to 540 ℃ during the rapid thermal annealing (RTA) process. Further, CZTSSe thin films are examined with X-ray diffraction, X-ray fluorescence, Raman spectroscopy, IPCE, Energy dispersive spectroscopy and Scanning electron microscopy techniques. The present work shows that Cu-based secondary phase formation can be suppressed in the CZTSSe absorber layer at an optimum RTA condition.

• Journal of the Mineralogical Society of Korea
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• v.24 no.3
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• pp.245-252
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• 2011

콜롬비아는 안데스 산맥의 북단에 위치하며 NS 방향의 단층대를 기준으로 지질 환경의 차이가 크다. 단층대를 기준으로 동부지역은 원생대 변성암류와 이를 피복하는 고생대 변성퇴적암류가 주로 분포하며, 서부 지역은 고생대 퇴적암류, 중생대 화성암류, 제 3 기 화산양류 및 퇴적암류가 주로 분포한다. 지화학이상대는 6개 그룹으로 분류되며, 철 (Fe), 귀금속(Au, Ag, Pt), 기초금속(Cu, Pb, Zn), 희유금속(Sn, Cr, Co, Mn, Mo, Ni, Nb, W, V, Mg, Ti, Be, REE, Ga, Zr, Hf, Se, Te, Ta, Cd, In, Li 등) 빛 핵원료자원인 U 이상대로 구성된다. 콜롬비아의 주요 부존자원은 석탄, 니켈, 금 및 에메랄드이다. 에메랄드, 석탄 및 니켈은 세계적인 매장규모와 생산량을 보인다. 콜롬비아는 탐사가 거의 수행되지 않은 지역이 전 국토의 49%에 달해 광물부존 잠재성은 현재보다 크게 높을 것으로 보인다. 따라서 최근 콜롬비아와의 광물자원 협력이 강화되고 있는 시점에서 미탐사 지역을 대상한 공동탐사를 지화학 이상대가 확인된 지역을 중심으로 수행하여 신규광체를 확보하고, 광물자원 협력을 강화함으로써 공동개발 여건을 마련할 필요가 있다고 판단된다.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.140-144
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• 2012

Ga-doped ZnO (GZO) was a limit of application on the photovoltaic devices such as CIGS, CdTe and DSSC requiring high process temperature, because it's electrical resistivity is unstable above 300 ℃ at atmosphere. Therefore, ZTO (zinc tin oxide) was introduced in order to improve permeability and thermal stability of GZO film. The resistivity of GZO (300 nm) single layer increased remarkably from 1.8 × 10-3Ωcm to 5.5 × 10-1Ωcm, when GZO was post-annealed at 400 ℃ in air atmosphere. In the case of the ZTO (150 nm)/GZO (150 nm) double layer, resistivity showed relatively small change from 3.1 × 10-3Ωcm (RT) to 1.2 × 10-2Ωcm (400 ℃), which showed good agreement with change of carrier density. This result means that ZTO upper layer act as a barrier for oxygen at high temperature. Also ZTO (150 nm)/GZO (150 nm) double layer showed lower WVTR compared to GZO (300 nm) single layer. Because ZTO has lower WVTR compared to GZO, ZTO thin film acts as a barrier by preventing oxygen and water molecules to penetrate on top of GZO thin film.

• Economic and Environmental Geology
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• v.25 no.3
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• pp.317-336
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• 1992

The garden soils, main road dusts, residential road dusts, and playground soils/dusts of Seoul, Geumsan, Onsan, and Taebaek areas were analyzed in order to investigate the level of heavy metal pollution by urbanization and industrialization. The soil pH is in the range of 5.48~8.40 and was generally neutral. The color of soils and dusts is mainly Raw Umber to dark greyish Raw Umber. Some samples from Taebaek city, a coal mining area, showed a deep black color due to contamination by coal dusts. Major minerals of the dusts and soils are quartz, feldspars, and micas, reflecting the composition of the parent rocks. However, pyrite was found as a major mineral in the samples of industrial road dusts of Onsan, a smelting area, and resicential road dusts of Taebaek. Thus, the high level of heavy metals in mining and smelting areas can be explained with the sulfide minerals. The mode of occurences of heavy metals in Seoul, a comprehensive urbanized area, were related to the metallic pollutants and organic materials through observation by scanning eletron microscopy. In main road and residential road dusts of Onsan area, Cd, Zn, and Cu were extremely high. Some industrial road and residential road dusts of Seoul area showed high Cu, Zn, and Pb contents, wereas some garden soils and residential road dusts of Taebaek area were high in As content. In general, the heavy metal contents in dust samples were two to three times higher than those in soil samples. Main road dust samples were the most reflective from the discriminant analysis of multi-element data. Cadmium, Sb, and Se in Onsan area, As in Taebaek area, Pb and Te in Seoul area were most characteristic in discriminating the studied areas. Therefore, Cd in smelting areas, As in coal mining areas, and Pb in metropolitan areas can be suggested as the characteristic elements of each pollution pattern. The dispersion of heavy metal elements in urban areas tends to orignate in main roads and deposit in garden soils through the atmosphere and residential roads. The heavy metal contamination in Seoul is characteristic in areas with high population, factory, road, and traffic decsities. Heavy metal contents are high in the vicinity of smelters in Onsan area and are decayed to background levels from one kilometer away from the smelters.