• Nuclear Engineering and Technology
• /
• 제53권6호
• /
• pp.1947-1954
• /
• 2021

In the nuclear medicine imaging, quality control (QC) process using quadrant bar phantom is fundamental aspect of evaluating the spatial resolution. In addition, QC process of gamma camera is performed by daily or weekly. Recently, Monte Carlo simulation using the Geant4 application for tomographic emission (GATE) is widely applied in the pre-clinical nuclear medicine field for modeling gamma cameras with pixelated cadmium telluride (CdTe) semiconductor detector. In this study, we modeled a pixelated CdTe semiconductor detector and quadrant bar phantom (0.5, 1.0, 1.5, and 2.0 mm bar thicknesses) using the GATE tool. Similarity analysis based on correlation coefficients and peak signal-to-noise ratios was performed to compare image qualities for various source to collimator distances (0, 2, 4, 6, and 8 cm) and collimator lengths (0.2, 0.4, 0.6, 0.8, and 1.0 cm). To this end, we selected reference images based on collimator length and source to collimator distance settings. The results demonstrate that as the collimator length increases and the source to collimator distance decreases, the similarity to reference images improves. Therefore, our simulation results represent valuable information for the modeling of CdTe-based semiconductor gamma imaging systems and QC phantoms in the field of nuclear medicine.

• Journal of Radiation Protection and Research
• /
• 제41권4호
• /
• pp.328-332
• /
• 2016

Background: Boron Neutron Capture Therapy (BNCT) is a new radiation therapy. In BNCT, there exists some very critical problems that should be solved. One of the severest problems is that the treatment effect cannot be known during BNCT in real time. We are now developing a SPECT (single photon emission computed tomography) system (BNCT-SPECT), with a cadmium telluride (CdTe) semiconductor detector. BNCT-SPECT can obtain the BNCT treatment effect by measuring 478 keV gamma-rays emitted from the excited state of $^7Li$ nucleus created by $^{10}B(n,{\alpha})$ $^7Li$ reaction. In the previous studies, we investigated the feasibility of the BNCT-SPECT system. As a result, the S/N ratio did not meet the criterion of S/N > 1 because deterioration of the S/N ratio occurred caused by the influence of Compton scattering especially due to capture gamma-rays of hydrogen. Materials and Methods: We thus produced an arrayed detector with two CdTe crystals to test cross talk phenomenon and to examine an anti-coincidence detection possibility. For more precise analysis for the anti-coincidence detection, we designed and made a collimator having a similar performance to the real BNCT-SPECT. Results and Discussion: We carried out experiments with the collimator to examine the effect of cross talk of scattering gamma-rays between CdTe elements more practically. As a result of measurement the coincidence events were successfully extracted. Conclusion: We are now planning to carry out evaluation of coincidence rate from the measurement and comparison of it with the numerical calculations.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
• /
• pp.338-341
• /
• 1997

According to reports, it is impossible to make Ohmic Contact with high resistivity p type CdTe or CdZnTe semiconductor theoretically. But it is in need of making Ohmic Contact to fabricate semiconductor radiation detector By electroless deposition method using gold chloride solution, we made Ohmic Contact of Au and p-Cd$_{80}$Zn$_{20}$Te which grown by High Presure Bridgman Method in Aurora Technologies Corporation. We investigated the interface with Rutherford Backscattering Spectrometry and Auger electron spectroscopy. And we evaluated the degree of Ohmic Contact for the Au/CdZnTe interface by the I/V characteristic curve. As a result, we concluded that it showed excellent Ohmic Contact property by tunneling mechanism through the interface.e.

• Nuclear Engineering and Technology
• /
• 제51권3호
• /
• pp.731-737
• /
• 2019

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.116-119
• /
• 2003

[ $Hg_{1-x}Cd_xTe$ ] (MCT) was grown by hot wall epitaxy method. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590 C for 15 min. When the thickness of the CdTe buffer layer was 5 m or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperature in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• Nuclear Engineering and Technology
• /
• 제54권5호
• /
• pp.1747-1753
• /
• 2022

Compton imaging is the main method for locating radioactive hot spots emitting high-energy gamma-ray photons. In particular, this imaging method is crucial when the photon energy is too high for coded-mask aperture imaging methods to be effective or when a large field of view is required. Reconstruction of the photon source requires advanced Compton event processing algorithms to determine the exact position of the source. In this study, we introduce a novel method based on a Deep Learning algorithm with a Convolutional Neural Network (CNN) to perform Compton imaging. This algorithm is trained on simulated data and tested on real data acquired with Caliste, a single planar CdTe pixelated detector. We show that performance in terms of source location accuracy is equivalent to state-of-the-art algorithms, while computation time is significantly reduced and sensitivity is improved by a factor of ~5 in the Caliste configuration.

• Nuclear Engineering and Technology
• /
• 제54권12호
• /
• pp.4693-4697
• /
• 2022

Parylene coating was adopted on CdZnTe (CZT) detector as a mechanical protection layer after wet passivation with hydrogen peroxide (H₂O₂) and ammonium fluoride (NH₄F). Wet chemical passivant lose their effectiveness when exposed to the ambient conditions for a long time. Parylene coating could protect the effectiveness of passivation, by mechanically blocking the exposure to the ambient conditions. Stability of CZT detector was tested with the measurement of leakage current density and response to radio-isotopes. When the enough thickness of parylene (>100 ㎛) is adopted, parylene is a promising protection layer thereby ensuring the performance and long-term stability of CZT detectors.

• 센서학회지
• /
• 제19권5호
• /
• pp.398-402
• /
• 2010

The liquid phase epitaxy(LPE) method was widely used to growth of mercury cadmium telluride(MCT) thin films. However, this method lead to Hg-vacancies in MCT thin film, because Hg has high vapor pressure at this temperature range. This is a well known defect in HgCdTe grown by LPE method. In this study, we report the development of techniques for improving the crystalline quality and controlling the composite uniformity of HgCdTe thin films using high- pressure Hg-ambient annealing method. As a result, we achieved the improvement of the composite uniformity of HgCdTe thin films. It was observed by the high angle annular dark field scanning TEM(HAADF-STEM) analysis. Moreover, new HgTe phase and a shrinking of lattice fringe were observed.

• 대한방사선기술학회지:방사선기술과학
• /
• 제44권5호
• /
• pp.459-464
• /
• 2021

The detector performance is important role in acquiring the gamma rays from patients. Among parameters of detector performances, there is density, which relates to respond to gamma rays. Therefore, we confirm the detection efficiency according to various detector materials based on the density parameter using GATE (geant4 application for emission tomography) simulation tool. The NaI (density: 3.67 g/cm³), CZT (Cadimium Zinc Telluride) (density: 5.80 g/cm³), CdTe (Cadmium Telluride) (5.85 g/cm³), and GAGG (Gadoinium Aluminum Gallium Garnet) (density g/cm³) were used as detector materials. In addition, the point source and quadrant bar phantom, which is modeled for 0.5, 1.0, 1.5, and 2.0 mm thicknesses, were modeled to confirm the quatitative analysis using sensitivity (cps/MBq) and the full width at half maximum (FWHM, mm) at the 2.0 mm bar thickness containing visual evaluation. Based on the results, the sensitivity for NaI, CZT, CdTe, and GAGG detector materials were 0.12, 0.15, 0.16, and 0.18 cps/MBq. In addition, the FWHM for quadrant bar phantom in the 2.0 mm bar thickness is 3.72, 3.69, 3.70, and 3.73 mm for NaI, CZT, CdTe, and GAGG materials, respectively. Compared with performance of detector materials according to density, the high density can improve detection efficiency in terms of sensitivity and mean count. Among these detector materials, the GAGG material is efficient for detection of gamma rays.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2015년도 춘계학술대회 논문집
• /
• pp.113-113
• /
• 2015

본 연구에서는 thermal evaporation법을 이용하여 제작한 CdTe 후막의 미세구조, 전기적 특성 및 X-선 조사에 따른 특성을 비교분석하였다. 기판온도를 $370{\sim}450^{\circ}C$로 변화시키며 증착하였으며, CdCl2 첨가에 따른 미세구조 변화를 관찰하였다. CdTe 막의 상 하부에 전극을 형성하여 I-V 특성을 평가하고, 실제 X-ray를 샘플에 조사하여 sensitivity를 측정하였다. 박막형성 초기에는 기판온도가 증가함에 따라 grain size가 증가하였지만, grain uniformity는 감소하였다. X-ray 특성향상을 위해서는 grain size와 uniformity 모두 중요한 인자이기 때문에 uniformity 향상을 위해 Cl을 첨가하였다. 미량의 Cl 첨가에서는 큰 변화를 보이지 않았지만 더 많은 양의 Cl 첨가 시, grain size 와 uniformity 모두 증가되는 것을 확인하였으며, 그에 따라 I-V, X-ray 조사 특성 모두 개선되는 것을 확인할 수 있었다.