Browse > Article
http://dx.doi.org/10.5369/JSST.2010.19.5.398

Effect of Hg-ambient annealing on Hg0.7Cd0.3Te thin films for IR detector  

Kim, Kwang-Chon (Electronic Materials Center, Korea Institute of Science and Technology(KIST))
Lee, Cha-Hyun (Department of Materials Science and Enguneering, Hongik University)
Choi, Won-Chel (Electronic Materials Center, Korea Institute of Science and Technology(KIST))
Kim, Hyun-Jae (School of Electrical and Electronic Engineering, Yonsei University)
Kim, Jin-Sang (Electronic Materials Center, Korea Institute of Science and Technology(KIST))
Publication Information
Journal of Sensor Science and Technology / v.19, no.5, 2010 , pp. 398-402 More about this Journal
Abstract
The liquid phase epitaxy(LPE) method was widely used to growth of mercury cadmium telluride(MCT) thin films. However, this method lead to Hg-vacancies in MCT thin film, because Hg has high vapor pressure at this temperature range. This is a well known defect in HgCdTe grown by LPE method. In this study, we report the development of techniques for improving the crystalline quality and controlling the composite uniformity of HgCdTe thin films using high- pressure Hg-ambient annealing method. As a result, we achieved the improvement of the composite uniformity of HgCdTe thin films. It was observed by the high angle annular dark field scanning TEM(HAADF-STEM) analysis. Moreover, new HgTe phase and a shrinking of lattice fringe were observed.
Keywords
HgCdTe; Hg-ambient annealing; Te-precipitation;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 A. Rogalski, “HgCdTe infrared detector material: history, status and outlook”, Rep. Prog. Phys., vol. 68, p. 2267, 2005.   DOI   ScienceOn
2 김진상, 서상희, “GaAs 및 CdZnTe 기판위에 MOVPE 법으로 성장된 HgCdTe 박막의 특성”, 한국결정학회지, 제12권, p. 171, 2001.
3 김진상, 서상희, S. Sivananthan, “MBE법으로 성장 된 CdTe(211)/Si 기판을 이용한 MOVPE HgCdTe 박막의 특성 향상”, 센서학회지, 제12권, p. 52, 2003.
4 T. J. de Lyon, J. E. Jensen, M. D. Gorwitz, C. A. Cockrum, S. M. Johnson, and G. M. Vensor, “MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress”, J. Electron. Mater., vol. 28, p. 705, 1999.   DOI   ScienceOn
5 K. D. Maranowski, J. M. Peterson, S. M. Johnson, J. B. Varesi, A. C. Childs, R. E. Bornfreund, A. A. Buell, W. A. Radford, T. J. de Lyon, and J. E. Jensen, “MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays”, J. Electron. Mater., vol. 30, p. 619, 2001.   DOI   ScienceOn
6 R. Ashokan, N. K. Dhar, B. Yang, A. Akhiyan, T. S. Lee, S. Rujifawat. S. Yousuf, and S. Sivananthan, “Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy”, J. Electron. Mater., vol. 29, p. 636, 2000.   DOI
7 G. J. Hails, J. E., Young, M. L., Graham, A., Blackmore, G., Houlton, M. R., Newey, J., and Astles, M. G., “The role of surface adsorbates in the metalorganic vapor phase epitaxial growth of (Hg, Cd)Te onto (100) GaAs substrates”, J. Eletronic Mater., vol. 24. p. 1149, 1995.   DOI
8 P. Moskvin, V. Khodakovsky, J. M. Olchowik, A. Zdyb, S. Gulkowski, and W. Sadowski, “Thermodynamic description of CdXHg1XTe growth process by LPE”, J. non-cryst.solids, vol. 354, p. 4407, 2008.   DOI   ScienceOn
9 S.-H. Suh, J.-H. Song, and S.-W. Moon, “Metalorganic vapor phase epitaxial growth of hillock free (100) HgCdTe/GaAs with good electrical properties”, J. Crystal Growth, vol. 159, p. 1132, 1996.   DOI   ScienceOn
10 O. V. Shcheritsa, O. S. Mazhorova, I. A. Denisov, Y. P. Popov, and A. V. Elyutin, “Numerical study for diffusion processes in dissolution and growth of $Cd_{x}Hg_{1-x}Te=CdTe$ heterostructures formed by LPE. Part II. Effect of programmed temperature changes”, J. Crystal Growth, vol. 290, p. 357, 2006.   DOI   ScienceOn
11 W. J. Everson, C. K. Ard, J. L. Sepich, B. E. Dean, and G. T. Neugebauer, “Etch pit characterization of CdTe and CdZnTe substrates for use in Mercury Cadmium Telluride epitaxy”, J. Electron. Mater.,vol. 24, p. 505, 1995.   DOI