• 제목/요약/키워드: CdS thin films

검색결과 178건 처리시간 0.029초

스퍼터링 방법으로 증착한 CdS박막의 열처리 온도에 따른 표면 및 구조 특성 (Surfacial and Structural Characteristics of Sputtering-deposited CdS Thin Films with a Change of Annealing Temperature)

  • 류승한;임채현;박주선;김남훈;양정태;이우선
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1266_1267
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    • 2009
  • 신재생 에너지 태양광을 활용하기 위한 태양광 발전에 있어서 기존의 고가의 실리콘 기판 대신 저가의 박막형 태양전지 연구가 활발히 진행 되고 있다. 본 연구에서는 박막형 태양전지에 있어서 태양광의 투과층으로 사용되는 CdS 박막의 열처리에 따른 특성을 연구하였다. 실험은 CdS박막을 Sputtering법으로 동일한 조건에서 제조하였고 이 박막을 $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$까지 열처리 하였다. 열처리 전과 후 Ellipsometer를 이용한 박막의 두께 변화, 표면의 RMS Roughness와 Peak to Valley Roughness의 변화 그리고 결정 구조변화 등을 조사하였다. 박막의 두께는 열처리 전보다 처리 후 두께가 얇아졌으나 거칠기나 결정성은 열처리 온도에 따라 거칠어지고 결정성이 떨어졌다.

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In과 Ga가 미포함 된 Kesterite Cu2ZnSn(S1-x,Sex)4 (CZTSS) 박막형 태양전지 개발 현황 (Development of Kesterite Cu2ZnSn(S1-x,Sex)4 (CZTSS)-Based Thin Film Solar Cells with In and Ga Free Absorber Materials)

  • 신승욱;한준희;강명길;윤재호;이정용;김진혁
    • 한국재료학회지
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    • 제22권5호
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    • pp.259-273
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    • 2012
  • Chalcogenide-based semiconductors, such as $CuInSe_2$, $CuGaSe_2$, Cu(In,Ga)$Se_2$ (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of $10^4cm^{-1}$, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.

(N-eicosyl pyridinium)-TCNQ (1 : 2) 착체와 Arachidic acid의 혼합 Langmuir-Blodgett 초박막 제작 (Fabrication of Mixed Langmuir-Blodgett Ultra Thin Films with(N-eicosyl pyridinium)-TCNQ(1:2) Complex and Aracltidic acid)

  • 손병천;정순욱;황교현
    • 한국응용과학기술학회지
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    • 제7권1호
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    • pp.77-80
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    • 1990
  • Using $CdCl_2$ buffer solution as subphase for LB films deposition, it was achieved successively to fabricate the Y-type mixed LB films of (N-eicosyl pyridinium)-TCNQ(1:2) complex and arachidic acid. By measure of U.V spectra and capacitance, deposition status was confirmed. Electrical conductivity was measured on a perpendicular direction of the LB films and in consequence of calculated was average $2.5\;{\times}\;10^{-13}$ - $2\;{\times}\;10^{-14}$ S/cm.

HWE 방법에 의한 CdS 박막의 성장과 광전도 특성 (Growth of CdS thin film using hot wall epitaxy method and their photoconductive characteristics)

  • 홍광준
    • 한국결정성장학회지
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    • 제6권3호
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    • pp.341-350
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    • 1996
  • HWE 방법으로 CdS 박막을 quartz plate 위에 성장하였다. CdS 박막을 성장할 때 증발원과 기판의 온도를 각각 $590^{\circ}C$, $400^{\circ}C$로 하였고 성장된 두께는 $2.5\;\mu\textrm{m}$였다. 성장된 CdS 박막의 X-선 회절 무늬로부터 외삽법에 의해 구한 a와 c는 각각 $4.137\;{\AA}$$6.713\;{\AA}$인 육방정계임을 알았다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도 의존성을 연구하였다. 이동도는 30 K에서 200 K까지는 piezoelectric 산란에 기인하고, 200 K에서 293 K까지는 polar optical 산란에 의하여 감소하였다. 광전도 셀의 특성으로 spectral response, 최대 허용 소비전력 (MAPD), 광전류와 암전류비 (pc/dc), 및 응답시간을 측정하였다. Cu 증기 분위기에서 열처리한 광전도 셀의 경우 ${\gamma}=0.99,\;pc/dc=9.42{\times}10^{6}$, MAPD : 318 mW, rise time 10 ms, decay time 9 ms로 가장 좋은 광전도 특성을 얻었다.

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급속열처리 조건에 따른 II-VI 화합물 태양전지용 CdS 박막의 특성변화 (Effect of Rapid Thermal Process on Properties of CdS Thin Films for II-VI Compound Solar Cell)

  • 최시혁;박승범;김정연;송우창;임동건
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.110-111
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    • 2009
  • 상온에서 밴드갭이 2.42 eV의 에너지를 가지며 직접 에너지 밴드갭을 갖는 고감도의 광전도체로 태양전지의 광투과 물질로 각광을 받고 있으며 광전도 cell로 연구되고 있는 CdS(Cadmium sulfide)를 용액 성장법(CBD)으로 제조하여 박막의 결정립의 향상과 박막내의 결함 등을 제거하기 위해 RTP(Rapid Thermal Process)를 이용하여 열처리 분위기 $N_2$, 처리시간 10분을 기준으로 열처리온도 ($300\;^{\circ}C$, $400\;^{\circ}C$, $500\;^{\circ}C$)를 변화시키며 박막의 전기적, 광학적 특성을 조사하였다. 캐리어 밀도가 급격히 낮아지고 이동도가 증가한 $500\;^{\circ}C$에서 $1.29\times10^3\;{\Omega} m$ 비저항을 나타냈다. 가시광선 영역에서 76.28%의 투과율을 보이는 특성을 나타내었다.

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EBE법으로 제작한 Se/CdS 이종접합의 특성 (Characteristics of Se/CdS Heterojunction Fabricated by EBE Method)

  • 박계춘;조재철;유용택
    • 센서학회지
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    • 제2권1호
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    • pp.87-94
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    • 1993
  • EBE법으로 슬라이드 유리기판 위에 CdS와 Se박막을 각각 증착하고 기판온도 및 열처리에 따른 표면상태, 결정구조, 전기적 및 광학적 특성을 분석하여 최적 제작조건을 찾았다. CdS는 기판온도 $150^{\circ}C$에서 입방정계로 가장 잘 성장되었으며 Se은 기판온도 $100^{\circ}C$까지 비정질을 나타내었으나 기판온도 $150^{\circ}C$일때는 단사정계로 결정성장되었다. 또한 비정질 Se을 온도 $150^{\circ}C$로 15분간 열처리하여 줌으로써 육방정계 결정 구조를 얻을 수 있었다. 최종적으로, 제작한 Se/CdS 이종접합에서 최대출력은 5000 lux일때 4 $mW/cm^{2}$이었으며 최대 분광감도는 585 nm에서 나타났다.

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A study on the characteristics of SrS:Cu TFEL devices prepared by hot wall deposition

  • Lee Sang-Tae
    • Journal of Advanced Marine Engineering and Technology
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    • 제30권4호
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    • pp.514-519
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    • 2006
  • SrS:Cu, Cl thin films have been grown by the hot wall technique with S furnace placed on the outside of the growth chamber in order to investigate the crystallographic and optical characteristics. The films have a good crystallinity independent of CuCl wall temperature and PL characteristics showed a peak assigned by the transition form $3d^94s^1\;(^3Eg)$ to $3d^{10}\;(^1A_{1g})$ of $Cu^+$ center. It has also been found that. from the PLE spectra, $Cu^+$ luminescent centers are doped in the host materials. The EL emission from SrS:Cu-based device showed a greenish-blue but shifted to short wavelength compared to SrS:Ce-based EL. The device was obtained the maximum luminance of $110cd/m^2$ and the maximum luminous efficiency of $0.1\;lm/W$ at $V_{40}$.

Hot-Wall Evaporation Technique으로 성장된 CdS 박막의 광전도 셀 특성 (Photoconductive Cell Characteristics of CdS Thin Films Grown by Hot-Wall Evaporation Technique)

  • 신영진;정태수;신현길;김택성;정철훈;이훈;신영신;유기수
    • 한국진공학회지
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    • 제2권1호
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    • pp.73-77
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    • 1993
  • Hot-wall evaporation technique으로 세라믹 기판 위에 CdS 박막을 성장하였다. 이 때 증발원과 기판의 온도는 각각 570, 40$0^{\circ}C$이고 두께는 3$mu extrm{m}$이었다. 공기 중에서 열처리하여 감도(${\gamma}$), 광전류와 암전류의 비(pc/dc), 최대허용소비전력(MAPD), spectral response 및 응답시간 등을 측정하였다. $550^{\circ}C$, 30분간 열처리한 경우 가장 좋은 광전도 특성을 얻었으며 ${\gamma}$=0.89, pc/cd~104, MAPD: 492mW, rise time이 100ms, decay time이 260ms이었다.

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Synthesis and Characterization of CZTS film deposited by Chemical Bath Deposition method

  • Arepalli, Vinaya Kumar;Kumar, Challa Kiran;Park, Nam-Kyu;Nang, Lam Van;Kim, Eui-Tae
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2012년도 춘계학술발표대회
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    • pp.99.1-99.1
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    • 2012
  • The thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4 - 1.6 eV and a large absorption coefficient of ~104 $cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative aqueous chemical approach based on chemical bath deposition (CBD) method for large area deposition of CZTS thin films. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and some factors like triethanolamine, ammonia, temperature which strongly affect on the morphology of CZTS film.

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마그넬리상 합성과 광전기화학셀 전극 응용 (Synthesis of Magneli Phases and Application to the Photoelectrochemical Electrode)

  • 박지환;;양하늘;홍순현;;김천중;김도진
    • 한국재료학회지
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    • 제28권5호
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    • pp.261-267
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    • 2018
  • Hydrothermal synthesis of highly crystalline $TiO_2$ nanorods is a well-developed technique and the nanorods have been widely used as the template for growth of various core-shell nanorod structures. Magneli/CdS core-shell nanorod structures are fabricated for the photoelectrochemical cell (PEC) electrode to achieve enhanced carrier transport along the metallic magneli phase nanorod template. However, the long and thin $TiO_2$ nanorods may form a high resistance path to the electrons transferred from the CdS layer. $TiO_2$ nanorods synthesized are reduced to magneli phases, $TixO_{2x-1}$, by heat treatment in a hydrogen environment. Two types of magneli phase nanorods of $Ti_4O_7$ and $Ti_3O_5$ are synthesized. Structural morphology and X-ray diffraction analyses are carried out. CdS nano-films are deposited on the magneli nanorods for the main light absorption layer to form a photoanode, and the PEC performance is measured under simulated sunlight irradiation and compared with the conventional $TiO_2/CdS$ core-shell nanorod electrode. A higher photocurrent is observed from the stand-alone $Ti_3O_5/CdS$ core-shell nanorod structure in which the nanorods are grown on both sides of the seed layer.