• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.6-10
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• 2020

The silver nanowires (AgNWs) were synthesized by the conventional polyol process, which revealed 25 ㎛ and 30 nm of average length and diameter, respectively. The synthesized AgNWs were applied to the CdSe/CdZnS quantum dot (QD) based transparent light-emitting device (LED). The device using a randomly networked AgNWs electrode had some problems such as the high threshold voltage (for operating the device) due to the random pores from the networked AgNWs. As a method of improvement, a composite electrode was formed by overlaying the ZnO:Ga on the AgNWs network. The device used the composite electrode revealed a low threshold voltage (4.4 Vth) and high current density compared to the AgNWs only electrode device. The brightness and current density of the device using composite electrode were 55.57 cd/㎡ and 41.54 mA/㎠ at the operating voltage of 12.8 V, respectively, while the brightness and current density of the device using (single) AgNWs only were 1.71 cd/㎡ and 2.05 mA/㎠ at the same operating voltage. The transmittance of the device revealed 65 % in a range of visible light. Besides the reliability of the devices was confirmed that the device using the composite electrode revealed 2 times longer lifetime than that of the AgNWs only electrode device.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1220-1223
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• 2003

TiO$_2$ and TiO$_2$-CdS which were expected to be highly activated photocatalysts with semiconductor properties, were prepared using supercritical fluid method. The powders prepared by supercritical fluid were agglomerate foam in 2-3 ${\mu}{\textrm}{m}$ size and the primary particles of 20 nm were arranged in the powders. The powders which were prepared by supercritical fluid method were anatase phase without any heat treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.684-685
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• 2013

p-형 반도체인 Cu(In,Ga)$Se_2$ (CIGS) 광 흡수 층은 이보다 에너지 밴드 간격이 큰 n-형 반도체와 이종 접합을 형성한다. 흡수층과 윈도우층 사이의 결정구조 차이와 밴드갭 에너지 차이를 완화시키기 위해 버퍼층이 필요하다. 버퍼층을 형성하는 물질로 화학적 용액 성장법(Chemical Bath deposition)을 사용한 CdS가 많이 적용되어 왔으나 Cd의 유해성 및 습식 공정으로 인한 연속공정에 대한 어려움이 있다. 따라서 버퍼층을 Cd을 포함하지 않는 ZnS, $In_2S_3$, (Zn, Mg)O 등과 같은 물질로 대체하여 원자층 증착법(Atomic Layer Deposition), 펄스레이져증착법(Pulsed Laser Deposition), 스퍼터링(sputtering) 등과 같은 건식으로 성장시키는 연구가 활발히 진행되고 있다. 본 연구에서는 $ZnO_{1-x}S_x$ ($0.2{\leq}x{\leq}0.4$)를 반응성 스퍼터링으로 증착하여 큰 밴드갭 에너지와 높은 광투과율를 갖는 버퍼층을 제작하였다. CIGS 박막의 손상을 줄여주기 위하여 RF 파워는 240, 200, 150, 100 W로 변화시켰다. CIGS 태양전지의 I-V 측정 결과, RF 파워가 150 W일 때 10.7%의 가장 높은 변환 효율을 보였고, 150 W 이상에서는 파워가 증가할 때 단락전류는 감소하였으며 개방전압은 다소 증가하였다. 반면 100 W에서 단락전류는 다소 증가하는 것에 반해 개방 전압이 급격히 낮아졌다. 이것은 파워에 따라 결합되는 산소의 양이 다르기 때문으로 생각된다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.6
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• pp.51-55
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• 1984

Band headings, at grain boundary and surface of polycrystalline thin semiconductor films, were assumed. thin film ransistor conduction theory which considered trapping at surface of semiconductor was proposed. CdSe Thin Film Transistors were fabricated. CdSe was thermal evaporated and SiO2 used as insulator was rf sputtered. Output characteristics which was calculated by conduction theory were compared with experimental results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.1
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• pp.101-112
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• 2015

II~VI compound semiconductors, $Zn_xCd_{1-x}S$ thin films have been synthesized onto indium-tin-oxide(ITO) coated glass substrates using thermal evaporation technique. The composition ratio x($0{\leq}x{\leq}1$) was varied to fabricate different kinds of $Zn_xCd_{1-x}S$ thin films including CdS(x=0) and ZnS(x=1) thin films. Then, the deposited thin films were thermally annealed at $400^{\circ}C$ to enhance their crystallinity. The chemical composition and electronic structure of films were investigated by using X-ray photoelectron spectroscopy(XPS). The optical energy gaps of the samples were determined by ultra violet-visible-near infrared(UV-Vis-NIR) spectroscopy and were found to vary in the range of 2.44 to 3.98 eV when x changes from 0 to 1. Finally, we measured the THz characteristics of the $Zn_xCd_{1-x}S$ thin films using THz-TDS(time domain spectroscopy) system to identify the capability for electronic and optical devices in THz region.

• Journal of the Korean Chemical Society
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• v.48 no.3
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• pp.249-253
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• 2004

CdS semiconductor quantum dot (QD) structures in aqueous solution are fabricated by using a gamma-ray irradiation technique and their optical absorption spectra are investigated. Cadmium sulfate solution, 2-mercaptoethanol solution, and reducing agent $e^{-}_{aq}$ are employed to produce CdS molecules, leading to CdS quantum dots. The measured linear absorption spectra before and after g-ray irradiation clearly show exciton peaks between 300 nm and 400 nm, which indicate the formation of CdS QD's. It is also observed that the exciton peaks are red-shifted with increasing the g-ray irradiation time from 5 min to 15 min. Therefore, it is concluded that the mean QD sizes can be systematically controlled with the dosage of the g-ray irradiation.

• Analytical Science and Technology
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• v.28 no.1
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• pp.33-39
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• 2015

CdS-QD particles are a nano-sized semiconducting crystal that emits light. Their optical properties show great potential in many areas of applications such as disease-diagnostic reagents, optical technologies, media industries and solar cells. The wavelength of emitting light depends on the particle size and thus the quality control of CdS-QD particle requires accurate determination of the size distribution. In this study, CdS-QD particles were synthesized by a simple ${\gamma}$-ray irradiation method. As a particle stabilizer polyvinyl pyrrolidone (PVP) were added. In order to determine the size and size distribution of the CdS-QD particles, sedimentation field-flow fractionation (SdFFF) was employed. Effects of carious parameters including the the flow rate, external field strength, and field programming conditions were investigated to optimize SdFFF for analysis of CdS-QD particles. The Transmission electron microscopy (TEM) analysis show the primary single particle size was ~4 nm, TEM images indicate that the primarty particles were aggregated to form secondary particles having the mean size of about 159 nm. As the concentration of the stabilizer increases, the particle size tends to decrease. Mean size determined by SdFFF, TEM, and dynamic light scattering (DLS) were 126, 159, and 152 nm, respectively. Results showed SdFFF may become a useful tool for determination of the size and its distribution of various types of inorganic particles.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.813-815
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• 1992

Accurate Capacitance-Voltage characteristics of Metal-Insulator-Semiconductor (MIS) devices in narrow band-gap semiconductors are presented. The unique band structure of narrow band-gap semiconductors is taken into account such as non-parabolicity and degeneracy. Compensated and partially ionized impurities either in the bulk or the space charge region are also considered. HgCdTe is a defect semiconductor, so this approach is very important for characterization and analysis of MIS devices.

• Journal of the Korean Electrochemical Society
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• v.14 no.1
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• pp.1-8
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• 2011

Ionic liquids are room-temperature molten salts, composed of organic mostly of organic ions that may undergo almost unlimited structural variation. We approach the new aspects of ionic liquids in applications where the semiconductor nanoparticles used as sensitizers of solar cells. We studied the effects of ionic liquids as capping ligand and/or solvent, on the morphology and phase of the CdSe/ZnS nanoparticles. Colloidal CdSe/ZnS nanoparticles were synthesized using a series of imidazolium ionic liquids; 1-R-3-methylimidazolium bis(trifluoromethylsulfonyl) imide ([RMIM][TFSI]), where R = ethyl ([EMIM]), butyl ([BMIM]), hexyl ([HMIM]), octyl ([OMIM]). The average size of nanoparticles was 8~9 nm, and both zinc-blende and wurtzite phase was produced. We also synthesized the nanoparticles using a mixture of trihexyltetradecylphosphonium bis(trifluoromethylsulfonyl)imide ([$P_{6,6,6,14}$][TFSI]) and octadecene (ODE). The CdSe/ZnS nanoparticles have a smaller size (5.5 nm) than that synthesized using imidazolium, and with a controlled phase from zinc-blende to wurtzite by increasing the volume ratio of [$P_{6,6,6,14}$][TFSI]. For the first time, the phase and size control of the CdSe/ZnS nanoparticles was successfully demonstrated using those ionic liquids.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.388-394
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• 1994

A Hg(0.79)Cd(0.21)Te single crystal has been grown by the Traveling Heater Method(THM). Its zinc blend cubic structure is identified from the X-ray diffraction patterns and its lattice constant is determined to be $6.464 {\AA}$ using the least-square method of Cohen. From the values of the lattice constant, the composition x is determined to be 0.21. The electron density is calculated from the relative intensities of the scattered X-ray and compared with the theoretically calculated values. From the electron density distribution, it is shown that the crystal binding of Hg(1-x)Cd(x)Te(MCT) is mainly covalent and has tetrahedron bonds between adjacent atoms.