• Title/Summary/Keyword: CdS/CdSe

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$ZnO_{1-x}S_x$ 버퍼층 건식 성장 시 스퍼터링 파워 변화에 따른 CIGS 태양전지 특성

  • Wi, Jae-Hyeong;Jo, Dae-Hyeong;Kim, Ju-Hui;Park, Su-Jeong;Jeong, Jung-Hui;Han, Won-Seok;Jeong, Yong-Deok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.684-685
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    • 2013
  • p-형 반도체인 Cu(In,Ga)$Se_2$ (CIGS) 광 흡수 층은 이보다 에너지 밴드 간격이 큰 n-형 반도체와 이종 접합을 형성한다. 흡수층과 윈도우층 사이의 결정구조 차이와 밴드갭 에너지 차이를 완화시키기 위해 버퍼층이 필요하다. 버퍼층을 형성하는 물질로 화학적 용액 성장법(Chemical Bath deposition)을 사용한 CdS가 많이 적용되어 왔으나 Cd의 유해성 및 습식 공정으로 인한 연속공정에 대한 어려움이 있다. 따라서 버퍼층을 Cd을 포함하지 않는 ZnS, $In_2S_3$, (Zn, Mg)O 등과 같은 물질로 대체하여 원자층 증착법(Atomic Layer Deposition), 펄스레이져증착법(Pulsed Laser Deposition), 스퍼터링(sputtering) 등과 같은 건식으로 성장시키는 연구가 활발히 진행되고 있다. 본 연구에서는 $ZnO_{1-x}S_x$ ($0.2{\leq}x{\leq}0.4$)를 반응성 스퍼터링으로 증착하여 큰 밴드갭 에너지와 높은 광투과율를 갖는 버퍼층을 제작하였다. CIGS 박막의 손상을 줄여주기 위하여 RF 파워는 240, 200, 150, 100 W로 변화시켰다. CIGS 태양전지의 I-V 측정 결과, RF 파워가 150 W일 때 10.7%의 가장 높은 변환 효율을 보였고, 150 W 이상에서는 파워가 증가할 때 단락전류는 감소하였으며 개방전압은 다소 증가하였다. 반면 100 W에서 단락전류는 다소 증가하는 것에 반해 개방 전압이 급격히 낮아졌다. 이것은 파워에 따라 결합되는 산소의 양이 다르기 때문으로 생각된다.

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Behavior of Microdomains in Block Copolymer/Nanoparticle Nanocomposite Thin Films under Electric Field (공중합체/나노입자 복합체 박막 내 미세구조의 전기장 하에서의 거동)

  • Bae, Joonwon
    • Applied Chemistry for Engineering
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    • v.28 no.3
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    • pp.290-293
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    • 2017
  • In this study, the fundamental behavior of microdomains in block copolymer/nanoparticle composite thin films was examined. In this experiment, polystyrene-b-poly(2-vinylpyridine) block copolymer and CdSe nanoparticles having a noncentrosymmetric property were employed. Composite hybrid thin films were produced by a spin coating method, and changes in the internal structure of composite thin films were monitored mainly by transmission electron microscopy. In summary, nanoparticles resided inside the thin film relatively intact, however, the block copolymer microdomains rotated parallel to the electric field direction. This study will be very helpful for future research activities regarding behaviors of heterogeneous composite materials under external fields.

Effect of Metal Components in Seminal Plasma on Seminal Parameter and Male Fertile Ability (정장액내의 금속성분이 정액지표 및 가임능에 미치는 영향)

  • Park, Nam-Cheol;Kim, Min-Soo;Yoon, Jong-Byung
    • Clinical and Experimental Reproductive Medicine
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    • v.24 no.1
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    • pp.67-81
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    • 1997
  • To determine the concentration and the physiologic role of metal components in blood plasma and seminal plasma in relation to male infertility, the concentrations of twelve metal components in blood plasma and seminal plasma including Na, Mg, K, Ca, Cr, Mn, Fe, Cu, Zn, Se, Cd and Pb were measured by atomic absorbance spectrophotometery or ion selective electrode analysis. Semen and blood samples were obtained from a total of 110 men including 70 male infertility patients, 20 vasectomized persons and 20 fertility proven volunteers visited to the Male Infertility Clinic of Pusan National University Hospital. The concentrations of Ca, Zn, Mg, Cr and Cd in control group were higher in seminal plasma than in blood plasma, and additionally Pb were higher in infertility group. The concentrations of all metal components revealed no significant difference according to patients' age, resident, occupation, sperm density, motility and hormone level in blood plasma, but some metal components including Ca, Mg, Cu, Mn, Cd and Pb revealed a significant difference according to each these parameters except patient's age in seminal plasma. The concentrations of Mn, Cd and Pb in the vasectomy persons were higher than in the infertility group III including testicular and epididymal factors, but not in blood plasma. We conclude that the quantitative changes of metal components in the seminal plasma may have effects on not only spermatogenesis and sperm function, but also contribute to diagnostic parameter according to organ specificity of the metal in the male reproduction.

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Kesterite 태양전지소자의 연구 현황과 향후 전망

  • Kim, Ju-Ran;Jo, Will-Ryeom
    • Bulletin of the Korea Photovoltaic Society
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    • v.3 no.3
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    • pp.18-31
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    • 2017
  • 박막 태양전지 기술은 현재 가장 큰 시장점유율을 보이고 있는 결정질 Si 태양전지의 차세대 후보로서 큰 관심을 받고 있다. 결정질 Si 태양전지보다 높은 효율로서, 저가로 생산할 수 있는 수준을 목표로 하여 $Cu(In,Ga)Se_2$ (CIGS) 를 비롯한 다양한 종류의 박막 태양전지들이 개발되고 있는데, 이 글에서는 최근에 범용성 초저가 박막 태양전지로 각광을 받고 있는 kesterite 박막 태양전지에 대해서 살펴보기로 한다. 가장 많이 연구되는 kesterite구조의 $Cu_2ZnSn(S,Se)_4$ (CZT(S,Se)) 박막 태양전지는 차세대 태양전지의 유력 후보군인 화합물태양전지 중에서 CdTe와 CIGS 그리고 새롭게 떠오르고 있는 페로브스카이트 등에 비해 범용 무독성 원소를 광흡수층으로 사용한다는 장점을 가지고 있지만 아직까지는 이들보다 효율이 낮아 상용화하기에는 좀 더 시간이 필요할 것으로 판단된다. CZT(S,Se)계 박막 태양전지의 기본적인 물성, 공정, 분석법 등을 알아보고 고효율을 달성하는 방법에 대하여 제시하고자 한다. 공정에 대한 상세한 최근 동향과 설명은 최근 한국공업화학회 소식지에 실린 강진규 박사의 리뷰논문을 참고하였다.

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Fabrication and Characterization of $CuInSe_2$Thin Films from $In_2Se_3$ and$Cu_2Se$Precursors ($In_2Se_3$$Cu_2Se$를 이용한 $CuInSe_2$박막제조 및 특성분석)

  • Heo, Gyeong-Jae;Gwon, Se-Han;Song, Jin-Su;An, Byeong-Tae
    • Korean Journal of Materials Research
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    • v.5 no.8
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    • pp.988-996
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    • 1995
  • CuInSe$_2$this films as a light absorber layer were fabricated by vacuum evaporation using In$_2$Se$_3$and Cu$_2$Se precursors and their properties were analyzed. Indium selenide films of 0.5${\mu}{\textrm}{m}$ thickness were first deposited by vacuum evaporation of In$_2$Se$_3$ on a Corning 7059 glass substrate. The films deposited at suscepor temperature of 40$0^{\circ}C$ showed a flat surface morphology with densely Packed grain structure. CuInSe$_2$films directly formed by evaporating Cu$_2$Se on the predeposited In$_2$Se$_2$films also showed a very flat surface when the susceptor temperature was $700^{\circ}C$. Cu$_2$Se, a second phase in the CuInSe$_2$film, was removed by evaporating additional In$_2$Se$_3$on the CuInSe$_2$film at $700^{\circ}C$. The grain size of 1.2${\mu}{\textrm}{m}$ thick CuInSe$_2$, film was about 2${\mu}{\textrm}{m}$ and the film had a (112) preferred orientation. As the amount of deposited In$_2$Se$_3$increased, the electrical resistivity of CuInSe$_2$films increased because of the decrease of hole concentration. But the optical band gap was almost constant at the value of 1.04eV, The CuInSe$_2$film grown on a Mo/glass substrate had a similar smooth microstructure compared to that on a glass substrate. A solar cell with ZnO/CdS/CuInSe$_2$/Mo structure may be realized based on the above CuInSe$_2$films.

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Geochemistry of the Moisan Epithermal Gold-silver Deposit in Haenam Area (해남 모이산 천열수 금은광상의 지구화학적 특성)

  • Moon, Dong-Hyeok;Koh, Sang-Mo;Lee, Gill-Jae
    • Economic and Environmental Geology
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    • v.43 no.5
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    • pp.491-503
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    • 2010
  • Geochemical characteristics of the Moisan epithermal gold-silver deposit with total 140 samples in Haenam area, Jeollanamdo were studied by using multivariate statistical analysis (correlation analysis, factor analysis and cluster analysis). The correlation analysis reveals that Ag, Cu, Bi, Te are highly correlated with Au in the both non-mineralized and mineralized zone. It is resulted from the presence of Au-Ag bearing minerals (electrum, sylvanite, calaverite and stuezite) and non Au-Ag containing minerals (chalcopyrite, tellurobismuthite and bismuthinite). Mo shows relatively much higher correlation at the mineralized zone (0.615) than non-mineralized zone (0.269) which implies Mo content is strongly affected by Au-mineralization. While Mn, Cs, Fe, Se correlated with Au at the nonmineralized zone, they have negative correlation at the mineralized zone. Therefore, they seem to be eluviated elements from the host rock during gold mineralization. Sb is enriched during the gold mineralization showing high correlation at the mineralized zone and negative correlation at the non-mineralized zone. According to the factor analysis, Se, Ag, Cs, Te are the indicators of gold mineralization presence due to the strong affection of gold content in the non-mineralized zone. In the mineralized zone, on the other hand, Mo, Te and Sb, Cu are the indicators of gold and silver mineralization, respectively. While the cluster analysis reveals that Cd-Zn-Pb-S, Bi-Fe-Cu-Mn, Se-Te-Au-Cs-Ag, As-Sb-Ba are the similar behavior elements groups in the non-mineralized zone, Cd-Zn-Mn-Pb, Fe-S-Se, As-Bi-Cs, Ag-Sb-Cu, Au-Te-Mo are the similar behavior elements groups in the mineralized zone. Using multivariate statistical analysis as mentioned above makes it possible to compare the behavior of presented minerals and difference of geochemical characteristics between mineralized and non-mineralized zone. Therefore, it will be expected a useful tool on the similar type of mining exploration.

TEM Observations on the Blue-green Laser Diode (청녹색 레이저 다이오드 구조에 관한 TEM 관찰)

  • Lee, Hwack-Joo;Ryu, Hyun;Park, Hae-Sung;Kim, Tae-Il
    • Applied Microscopy
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    • v.27 no.3
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    • pp.257-263
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    • 1997
  • Microstructural characterizations of II-VI blue laser diodes which consist of quaternary $Zn_{1-x}Mg_xS_ySe_{l-y}$ cladding layer, ternary $ZnS_ySe_{l-y}$ guiding layer and $Zn_{0.8}Cd_{0.2}Se$ quantum well as active layer were carried out using the transmission electron microscope working at 300 kV. Even though the entire structure is pseudomorphic to GaAs substrate, the structure had contained numerous extended stacking faults and dislocations which had created at ZnSe/GaAs interfaces and then further grown to the top of the epilayers. These faults might be expected to cause the degradation and shortening the lifetime of laser devices.

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Quantum Dot-Sensitized Solar Cells Based on Mesoporous TiO2 Thin Films (메조포러스 이산화티타늄 박막 기반 양자점-감응 태양전지)

  • Lee, Hyo Joong
    • Journal of the Korean Electrochemical Society
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    • v.18 no.1
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    • pp.38-44
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    • 2015
  • This review article summarizes the recent progress of quantum dot (QD)-sensitized solar cells based on mesoporous $TiO_2$ thin films. From the intrinsic characteristics of nanoscale inorganic QDs with various compositions, it was possible to construct a variety of 3rd-generation thin film solar cells by solution process. Depending on preparation methods, colloidal QD sensitizers are pre-prepared for later deposition onto the surface of $TiO_2$ or in-situ deposition of QDs from chemical bath is done for direct growth of QD sensitizers over substrates. Recently, colloidal QD sensitizers have shown an overall power conversion efficiency of ~7% by a very precise control of composition while a representative CdS/CdSe from chemical bath deposition have done ~5% with polysulfide electrolytes. In the near future, it is necessary to carry out systematic investigations for developing new hole-conducting materials and controlling interfaces within the cell, thus leading to an enhancement of both open-circuit voltage and fill factor while keeping the current high value of photocurrents from QDs towards more efficient and stable QD-sensitized solar cells.

Pathogenesis of minimal change nephrotic syndrome: an immunological concept

  • Kim, Seong Heon;Park, Se Jin;Han, Kyoung Hee;Kronbichler, Andreas;Saleem, Moin A.;Oh, Jun;Lim, Beom Jin;Shin, Jae Il
    • Clinical and Experimental Pediatrics
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    • v.59 no.5
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    • pp.205-211
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    • 2016
  • Idiopathic nephrotic syndrome (INS) in children is characterized by massive proteinuria and hypoalbuminemia. Minimal change nephrotic syndrome (MCNS) is the most common form of INS in children. The pathogenesis of MCNS still remains unclear, however, several hypotheses have been recently proposed. For several decades, MCNS has been considered a T-cell disorder, which causes the impairment of the glomerular filtration barrier with the release of different circulating factors. Increased levels of several cytokines are also suggested. Recently, a "two-hit" theory was proposed that included the induction of CD80 (B7-1) and regulatory T-cell (Treg) dysfunction, with or without impaired autoregulatory functions of the podocyte. In contrast to the well-established involvement of T cells, the role of B cells has not been clearly identified. However, B-cell biology has recently gained more attention, because rituximab (a monoclonal antibody directed against CD20-bearing cells) demonstrated a very good therapeutic response in the treatment of childhood and adult MCNS. Here, we discuss recent insights into the pathogenesis of MCNS in children.

반응성 스퍼터링 후 열처리를 이용한 CIGS 박막의 조성비 변화에 따른 특성분석

  • Lee, Ho-Seop;Park, Rae-Man;Jang, Ho-Jeong;Kim, Je-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.375-375
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    • 2011
  • Cu(In1-xGax)Se2 (CIGS)박막증착법 중 금속 전구체의 셀렌화 공정법은 다른 제조 방법에 비해 대면적 생산에 유리하고, 비교적 공정 과정이 간단하다는 장점이 있다. 이 제조 방법은 금속 전구체를 만든 후에 셀렌화 공정을 하게 된다. 셀렌화 공정은 대부분 H2Se 가스를 사용하지만 유독성으로 사용하는데 주의해야 한다. 본 실험은 H2Se를 사용하지 않고 Se원료를 주입하기 위해 Se cracker를 사용했고 금속 전구체 증착과 셀렌화를 동시에 하는 반응성 스퍼터링 후 열처리 법을 이용하여 CIGS 박막을 증착 했다. CIGS의 박막의 Cu/[In+Ga], Ga/[In+Ga]비를 변화시켜 특성변화를 관찰했다. Cu/[In+Ga]비가 감소할수록 CIGS의 결정방향인 (112) 이 우세하게 발달했고 Ga/[In+Ga]비가 증가할수록 CIGS의 결정면 사이의 값이 작아지기 때문에 CIGS peak의 2-Theta 값이 증가하게 된다. CIGS 박막 태양전지의 구조는 Al/Ni/ITO/i-ZnO/CdS/CIGS/Mo/glass 제작했다. CIGS박막의 조성비가 Cu/[In+Ga]=0.84, Ga/[In+Ga]=0.24인 박막태양전지에서 개방전압 0.48 V, 단락전류밀도 33.54 mA/cm2, 충실도 54.20% 그리고 변환효율 8.63%를 얻었다.

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