• Current Photovoltaic Research
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• 제1권1호
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• pp.52-58
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• 2013

Two different window-structured $CuInGaSe_2$(CIGS) solar cells, i.e., CIGS/thin-CdS/ZnO:B(sample A) and CIGS/very thin-CdS/Zn(S/O)/ZnO:B(sample B), were prepared, and the diffusivity of Zn, Cd, S, and B atoms, respectively, in the CIGS, ZnO or Zn(S/O) layer was estimated by a theoretical fit to experimental secondary ion mass spectrometer data. Diffusivities of Zn, Cd, S, and B atoms in CIGS were $2.0{\times}10^{-13}(1.5{\times}10^{-13})$, $4.6{\times}10^{-13}(4.4{\times}10^{-13})$, $1.6{\times}10^{-13}(1.8{\times}10^{-13})$, and $1.2{\times}10^{-12}cm^2/s$ at 423K, respectively, where the values in parentheses were obtained from sample B and the others from sample A. The diffusivity of the B atom in a Zn(S/O) of sample B was $2.1{\times}10^{-14}cm^2/sec$. Moreover, the diffusivities of Cd and S atoms diffusing back into ZnO(sample A) or Zn(S/O)(sample A) layers were extremely low at 423K, and the estimated diffusion coefficients were $2.2{\times}10^{-15}cm^2/s$ for Cd and $3.0{\times}10^{-15}cm^2/s$ for S.

• Journal of the Optical Society of Korea
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• 제18권5호
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• pp.598-604
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• 2014

A polarization fluorescence correlation spectroscopy system based on a confocal microscope was built to study the rotational and translational diffusion of CdSe/CdS quantum rods (Q-rods), with the same and different polarization states between the polarizer and the analyzer (i.e. the XXX and XYY states). The rotational diffusion amplitude showed the dependences on polarization of $0.75{\pm}0.05$ in the XXX state and $0.26{\pm}0.03$ in the XYY state, when the translational diffusion amplitude was 1. The diffusion coefficients of the Q-rods were found based on their translational and rotational diffusion times in the two polarization states, in solutions with viscosity ranging from 0.9 to 6.9 cP. The translational and rotational diffusion coefficients ranged from $1.5{\times}10^{-11}$ to $2.6{\times}10^{-12}m^2s^{-1}$ and from $2.9{\times}10^5$ to $5.6{\times}10^4s^{-1}$, respectively.

• 한국지반환경공학회 논문집
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• 제3권1호
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• pp.13-26
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• 2002

본 연구에서는 아연 및 카드뮴의 확산계수에 미치는 온도영향에 대한 연구를 위해 $15^{\circ}C$와 $55^{\circ}C$에서 확산실험을 수행하였다. 온도변화에 따른 유효확산계수의 변화를 비교할 경우 두 금속 모두에서 $55^{\circ}C$에서의 유효확산계수가 $15^{\circ}C$에서의 확산계수에 비해 최대 10배까지 큰 것으로 나타났다. 그리고 온도증가에 따른 확산속도의 증가와 더불어 중금속들의 흡착량 또한 증가하는 것으로 나타났다. 그러므로 지연인자를 얻는 방법의 차이에 따라 비교적 흡착량을 과다하게 평가하는 흡착실험을 통해 얻은 지연인자를 이용하여 유효확산계수를 산정할 경우 확산계수를 과대평가 할 수 있다. 그리고 연속추출 실험 결과, 아연의 경우에는 탄산염 형태로의 분배경향이 가장 크게 나타났고, 카드뮴의 경우에는 이온교환형태로의 분배가 가장 크게 나타났다. 특히 실험을 수행한 온도가 증가함에 따라 아연 확산실험의 경우에는 탄산염 형태와 유기물 형태로의 분배가 증가하는 것으로 나타났다. 반면 카드뮴 확산실험의 경우에는 온도변화와 무관하게 60%이상이 이온교환 형태로 분배됨을 알 수 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 춘계학술발표회 초록집
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• pp.52-53
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• 1999

• 대한화학회지
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• 제15권6호
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• pp.347-352
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• 1971

The variations of the positive and negative electrode potentials, and of internal pressure were measured during the charge of the sealed type Ni-Cd cell. Both polarization characteristics of a paste type Cd-electrode as a gas diffusion electrode in 30% KOH solution and the effects of active carbon electrode as an oxygen consuming auxiliary electrode of the Ni-Cd cell on the charging characteristics of the cell were studied. Peak voltage at the end of charge of the cell is ascribed to the peak at the negative electrode potential, which is due to the concentration polarization by the lack of $Cd^{++}$ ion and oxygen concentration. And the recovery of the negative electrode potential is resulted from depolarization by the increasing diffusion limiting current density with the increasing oxygen pressure. The active carbon electrode was effective as an oxygen consuming auxiliary electrode. The internal pressure of the cell could be maintained below 200mmHg even at one hour rate charge and overcharge by the use of active carbon electrode as an auxiliary electrode.

• 전기학회논문지
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• 제60권6호
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• pp.1169-1174
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• 2011

CdTe thin-film solar cell technology is well known that it can theoretically improve its conversion efficiency and manufacturing costs compared to the conventional silicon solar cell technology, due to its optical band gap energy (about 1.45eV) for solar energy absorption, high light absorption capability and low cost requirements for producing solar cells. Although the prior studies obtained the high light absorption, CdTe thin film solar cell has not been come up to the sufficient efficiency yet. So, doping method was selected for the improvement of the electrical characteristics in CdTe solar cells. Some elements including Cu, Ag, Cd and Te were generally used for the p-dopant as substitutional acceptors in CdTe thin film. In this study, the sputtering-deposited CdTe thin film was immersed in $AgNO_3$ solution for ion exchange method to dope Ag ions. The effects of immersion temperature and Ag-concentration were investigated on the optical properties and electrical characteristics of CdTe thin film by using Auger electron spectroscopy depth-profile, UV-visible spectrophotometer, and a Hall effect measurement system. The best optical and electrical characteristics were sucessfully obtained by Ag doping at high temperature and concentration. The larger and more uniform diffusion of Ag ions made increase of the Ag ion density in CdTe thin film to decrease the series resistance as well as mede the faster diffusion of light by the metal ions to enhance the light absorption.

• Current Photovoltaic Research
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• 제9권3호
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• pp.96-105
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• 2021

Even though above 22% efficiencies have been reported in Cd-free Cu(In,Ga)Se₂ (CIGS) solar cell with Zn-containing buffers, the efficiencies with Zn-containing buffers, in general, are well below 20%. One of the reasons is Zn diffusion from the Zn-containing buffer layer to CIGS film during buffer growth. To avoid the degradation, it is necessary to prevent the diffusion of Zn atoms from Zn-containing buffer to CIGS film. For the purpose, we characterized an In₂Se₃ film as a possible diffusion barrier layer because In₂Se₃ has no Zn component. It was found that an In₂Se₃ layer grown at 300℃ was very effective in preventing Zn diffusion from a Zn-containing buffer. Also, the In₂Se₃ had a large potential barrier in the valence band at the In₂Se₃/CIGS interface. Therefore, In₂Se₃ passivation has the potential to achieve a super-high efficiency in CIGS solar cells that employ Cd-free ALD processed buffers containing Zn.

• 한국지반환경공학회 논문집
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• 제11권1호
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• pp.45-51
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• 2010

본 연구는 hydroxyapatite(HAP) 첨가 활성탄(HAP sorbent)의 카드뮴에 대한 흡착특성을 조사하였다. HAP 첨가량의 변화에 따른 카드뮴의 제거특성은 HAP 첨가량이 증가 할수록 카드뮴의 제거량은 흡착에 의한 영향으로 증가하는 것으로 나타났다. 이러한 결과는 HAP에 의한 이온교환능력의 증가에 의한 것으로 사료된다. 동역학적 흡착과 흡착평형에 관한 연구는 연속적인 회분식 실험을 통하여 조사하였다. 조사된 흡착평형 데이터는 Langmuir와 Freundlich isotherm mode을 사용하여 살펴보았으며, 초기 흡착질의 농도 변화에 따른 HAP 첨가 활성탄의 카드뮴의 흡착은 Freundlich isotherm model에 적합한 것으로 나타났다. Cd의 흡착반응의 동역학적 연구를 위하여 유사 1차 반응속도와 유사 2차 반응속도 모델을 사용하 Cd 흡착반응의 흡착 메커니즘을 조사하였다. 유사 2차 반응속도를 따르며, 유사 2차 반응속도 상수는 활성탄에 HAP의 첨가량이 증가할수록 증가하는 것을 확인할 수 있었다. 또한, intraparticle diffusion model을 사용하여 수용액상의 흡착질과 흡착매질과의 흡착 메커니즘을 조사하였다. 수용액상 카드뮴의 흡착 메커니즘은 흡착질과 흡착매질에서 표면흡착반응과 입자내 확산이 동시에 일어나는 것으로 확인되었다.

• International Journal of Fluid Machinery and Systems
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• 제3권1호
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• pp.20-28
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• 2010

This paper deals with the Design and Analysis of a Controlled Diffusion Aerofoil (CDA) Blade Section for an Axial Compressor Stator and Effect of incidence angle and Mach No. on Performance of CDA. CD blade section has been designed at Axial Flow Compressor Research Lab, Propulsion Division of National Aerospace Laboratories (NAL), Bangalore, as per geometric procedure specified in the U.S. patent (4). The CFD analysis has been performed by a 2-D Euler code (Denton's code), which gives surface Mach No. distribution on the profiles. Boundary layer computations were performed by a 2-D boundary layer code (NALSOF0801) available in the SOFFTS library of NAL. The effect of variation of Mach no. was performed using fluent. The surface Mach no. distribution on the CD profile clearly indicates lower peak Mach no. than MCA profile. Further, boundary layer parameters on CD aerofoil at respective incidences have lower values than corresponding MCA blade profile. Total pressure loss on CD aerofoil for the same incidence range is lower than MCA blade profile.

• 한국재료학회지
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• 제8권5호
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• pp.383-393
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• 1998

고효율 박막형 태양전지 제조를 위해 근접승화법에 의한 CdTe박막의 성장을 연구하였다. 내부압력의 변화, 기판과 소스 사이의 거리, 기판과 소스의 온도 등의 변수가 성장속도와 미세구조에 미치는 영향을 관찰했다. 내부압력의 변화에 따라 성장과정이 diffusion limited transport와 sublimation limited transport로 나뉘어지며, 이 두가지 성장방식의 분기점은 기체분자의 평균자유행정거리에 의해 결정되었다. 소스의 형태에 따라서 박막의 성장속도와 미세구조는 큰 차이를 보였으며, 실험을 통해 이러한 차이가 증발표면의 온도강하에 의한 현상임을 규명하였다. 기판과 소스사이의 간격에 따른 성장속도를 해석하기 위해 일방향열해석을 통해 기판과 소스표면의 온도를 계산하였다. X선 회절분석과 표면형상의 관찰을 통해 성장속도가 박막의 미세구조에 영향을 줌을 알았다. 기판의 온도가 증가하면서 박막성장시 (111)로의 우선성장방위가 관찰되었지만 고온이 되면서 다시 random orientation의 경향을 나타냈다.