• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.15-19
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• 1998

Defects formation of Chemical Vapor Deposition (CVD) diamond on $^4He^{2+}$ irradiation and after remote hydrogen plasma treatment(RHPT) were investigated by cathodoluminescence(CL). As calculated in the TRIM simulation, the light elements of $^4He^{2-}$ can be penetrated into the diamond bulk structure at 3~4 $\mu\textrm{m}$ depth. The effects of the implantation region were observed when 5 keV~20 keV electron energy (insight 0.3~4.0$\mu\textrm{m}$) of CL measurement was irradiated to diamond at temperature 80 K. After the RHPT, rehybridization of irradiation damaged diamond was studied. The intensity of 5RL center(intrinsic defect of C) was diminished. The 2.16 eV center (N-V center) occurring usually by annealing could not be seen after RHPT. The diamond was rehybridized by hydrogen radicals without etching and thermal degradation by the RHPT.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.757-763
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• 1998

The effect of {{{{ {Ga }^{3+ } }} addition on the photoluminescence and cathodoluminescence of {{{{ {SrTiO}_{3 } }}:{{{{ { Pr}^{3+ } }} was stu-died by performing the excitation emission and decay time measurements. Addition of {{{{ {Ga }^{3+ } }} in {{{{ {SrTiO}_{3 } }}:{{{{ { Pr}^{3+ } }} resulted in a considerable enhancement of {{{{ { Pr}^{3+ } }} emission intensity. From the analysis of the experimental results the following mechanism is proposed. Excitation in the {{{{ {SrTiO}_{3 } }} host lattice leads to the formation of electrons in the conduction band and holes in the valence band. The electrons in the conduction band re-combine radiatively with the holes trapped at {{{{ { Ga}^{3+ } }} and the energy is transferred to {{{{ { Pr}^{3+ } }} ion which give its own characteristic red emission.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.743-745
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• 2006

The luminescence properties of $Sr_{1-x}Ba_xTiO_3:Pr$, Al red phosphor for Field Emission Displays (FEDs) have been investigated in powders prepared though solid-state reactions. $Sr_{1-x}Ba_xTiO_3:Pr$, Al red phosphors indicate a higher luminescent intensity, and have been found to have potential for field emission displays. The addition of Ba increased the luminescence intensity at 617 nm by up to 30%. Ba ions are effective in producing the energy transfers from host-to-activator in 4f-5d transitions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.187-191
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• 2005

A ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions at a calcine temperature of 700 $^{\circ}C$ and sintering temperature of 1300 $^{\circ}C$ in order to deposit ZnGa$_2$O$_4$ phosphor thin film at various temperature using rf magnetron sputtering system. A ZnGa$_2$O$_4$ phosphor thin film was deposited on Si(100) substrate and annealed by a rapid thermal processor(RTP) at 700 $^{\circ}C$, for 15 sec. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target and thin film showed the main peak (311) direction. ZnGa$_2$O$_4$ thin film has better crystalization due to as function of increasing substrate and annealing temperature. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor thin film showed the main peak 420 nm wavelength and the maximum intensity at the substrate temperature of 500 $^{\circ}C$ and annealing temperature of 700 $^{\circ}C$, for 15 sec.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.615-619
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• 2007

MgO layer plays an important role for plasma display panels (PDPs). In this experiment, ion beam assisted deposition (IBAD) methode was uesed to deposit a MgO thin film and the assisting oxygen ion beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the secondary electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. The results showed that the assisting ion beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. The properties of MgO thin film were also analyzed using XRD and SEM, these results showed the assisting ion beam energy had direct effect on characteristics of MgO thin film.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.29-32
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• 2007

Zinc gallate, $ZnGa_2O_4:Mn^{2+}$ co-doped with different concentrations of $Mg^{2+}$ (0.001- 0.5 mol%) was prepared by solid state synthesis method. These compositions were investigated for their photoluminescence and cathodoluminescence properties. The optimized composition $Zn_{0.990}Mg_{0.005}Ga_2O_4:Mn_{0.005}$ shows higher luminescence intensity compared to the parent phosphor. The intense green emission peak was found at 504 nm. The $Mg^{2+}$ doping does not affect much the decay time. It remains <10 ms for these compositions which make them potential candidate for application in TV screens.

• Journal of the Korean Ceramic Society
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• v.35 no.3
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• pp.245-250
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• 1998

Field emission display (FED) is currently being explored as a potential flat panel display technology. The need of new materials for low voltage blue phosphors for FED focused our attention on the $Y_2O_3-Nb_2O_5$ sys-tem. Yttrium niobate doped with $Bi^{3+}$ was prepared by solid state reaction technique and the optimization of the luminescent properties with a control of $Bi^{3+}$ amounts and Y/Nb ratio was studied. Under 254 nm and low voltage electron excitations $Bi^{3+}-activated$ YNbO4 phosphors showed a strong and relatively narrow blue em-ission band with a range of 420 to 450 nm, Especially 0.4wt% $Bi^{3+}\;doped\;YNbO_4$ phosphors with Y/Nb ratio of 1/1 showed the maximum emission intensity. Under low voltage electron excitation maximum emission in-tensity appeared at the Y/Nb ratio of 0.495/0.505.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.7
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• pp.443-447
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• 2014

ZnO crystals with different morphologies were synthesized through a thermal evaporation of Zn-Mn mixtures in air. The morphology was dependant on the Mn content in Zn-Mn mixture. The morphology was changed from rod to tetrapod shape with decreasing Mn content in Zn-Mn mixture. The result indicates that the concentration of Mn might be responsible for the different morphologies of ZnO crystals. XRD spectra showed that the ZnO crystals had a hexagonal wurtzite crystal strutures. For all the samples, room temperature cathodoluminescence spectra showed a ultra-violet emission at 380 nm and a green emission at around 500 nm. However, the intensity ratio of ultra-violet emission to green emission was significantly different with the Mn content in the source material.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.152-152
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• 2000

차세대 평판 디스플레이로 주목박고 있는 FED는 현재 저전압 환경에서 기존의 CRT와 비슷한 해상도와 밝기를 얻지 못하고 있다. 이는 형광체 입자의 표면에 존재하는 결함, 오염, band - bonding과 같은 비발광층과 제조공정 중에 산화되거나 공기중에 노출되어 막 표면이 쉽게 오염되기 때문이다. 따라서 본 연구에서는 전기영동법으로 제작된 형광체의 효율 향상을 위해 레이저 표면 처리효과를 연구하였다. 실험에 사용한 레이저 표면처리 방법은 Nd:YAG pulse(355nm), continuous laser를 이용하였으며 레이저 power와 처리 시간을 변화시키면서 실시하였다. 형광체 막의 표면 두께 측정을 위해 Scanning Electron Microscopy(SEM), 처리된 막의 발광세기를 비교 분석하기 위해 Photoluminescence(PL), Cathodoluminescence(CL) intensity를 측정하였다.

• Korean Journal of Materials Research
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• v.28 no.10
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• pp.590-594
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• 2018

ZnO micro/nanocrystals are formed by a vapor transport method. Mixtures of ZnO and TiO powders are used as the source materials. The TiO powder acts as a reducing agent to reduce the ZnO to Zn and plays an important role in the formation of ZnO micro/nanocrystals. The vapor transport process is carried out in air at atmospheric pressure. When the weight ratios of TiO to ZnO in the source material are lower than 1:2, no ZnO micro/nanocrystals are formed. However, when the ratios of TiO to ZnO in the source material are greater than 1:1, the ZnO crystals with one-dimensional wire morphology are formed. In the room temperature cathodoluminescence spectra of all the products, a strong ultraviolet emission centered at 380 nm is observed. As the ratio of TiO to ZnO in the source material increases from 1:2 to 1:1, the intensity ratio of ultraviolet to visible emission increases, suggesting that the crystallinity of the ZnO crystals is improved. Only the ultraviolet emission is observed for the ZnO crystals prepared using the source material with a TiO/ZnO ratio of 2:1.