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http://dx.doi.org/10.4313/JKEM.2005.18.2.187

Characteristics of ZnGa2O4 Phosphor Thin Film with Temperature of Substrate and Annealing  

Kim, Yong-Chun (경원대학교 전자전기정보공학부)
Hong, Beom-Joo (경원대학교 전자전기정보공학부)
Kwon, Sang-Jik (경원대학교 전자전기정보공학부)
Lee, Dal-Ho (경원대학교 전자전기정보공학부)
Kim, Kyung-Hwan (경원대학교 전자전기정보공학부)
Park, Yong-Seo (경원대학교 전자전기정보공학부)
Choi, Hyung-Wook (경원대학교 전자전기정보공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.2, 2005 , pp. 187-191 More about this Journal
Abstract
A ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions at a calcine temperature of 700 $^{\circ}C$ and sintering temperature of 1300 $^{\circ}C$ in order to deposit ZnGa$_2$O$_4$ phosphor thin film at various temperature using rf magnetron sputtering system. A ZnGa$_2$O$_4$ phosphor thin film was deposited on Si(100) substrate and annealed by a rapid thermal processor(RTP) at 700 $^{\circ}C$, for 15 sec. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target and thin film showed the main peak (311) direction. ZnGa$_2$O$_4$ thin film has better crystalization due to as function of increasing substrate and annealing temperature. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor thin film showed the main peak 420 nm wavelength and the maximum intensity at the substrate temperature of 500 $^{\circ}C$ and annealing temperature of 700 $^{\circ}C$, for 15 sec.
Keywords
ZnGa$_2$O$_4$; Phosphor; Rf magnetron sputtering; Cathodoluminescence(CL);
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