• 한국재료학회지
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• 제19권3호
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• pp.163-168
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• 2009

$Eu^{3+}$-doped $Y_2O_3$ red phosphor was synthesized in a flux method using the chemicals $Y_2O_3,\;Eu_2O_3,\;H_3BO_3$ and $BaCl_2{\cdot}2H_2O$. The effect of a flux addition on the preparation of $Y_2O_3:Eu_{3+}$ red phosphor used as a cold cathode fluorescence lamp was investigated. $H_3BO_3$ and $BaCl_2{\cdot}2H_2O$ fluxes were used due to their different melting points. The crystallinity, thermal properties, morphology, and emission characteristics were measured using XRD, TG-DTA, SEM, and a photo-excited spectrometer. Under UV excitation of 254 nm, $Eu_2O_3$ 3.7 mol% doped $Y_2O_3$ exhibited a strong narrow-band red emission, peaking at 612 nm. From this result, the phosphor synthesized by firing $Y_2O_3$ with 3.7 mol% of $Eu_2O_3$, 0.25 mol% of $H_3BO_3$ and 0.5 mol% of $BaCl_2{\cdot}2H_2O$ fluxes at $1400^{\circ}C$ for 2 hours had a larger particle size of $4{\mu}m$ on average compared to the phosphor of the $H_3BO_3$ flux alone. In addition, a phosphor synthesized by the two fluxes together had a rounder corner shape, which led to the maximum emission intensity.

• Bulletin of the Korean Chemical Society
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• 제31권2호
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• pp.327-330
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• 2010

$LiCoO_2$, a cathode material for lithium rechargeable batteries, was prepared in a nanoscale through a simple sonochemistry. First, $Co_3O_4$ nanoparticles were prepared by reacting NaOH and $CoCl_2$ or $CoSO_4$ with a sonochemical method, operated at 20 kHz and 220 W for 20 min, very powerful multibubble sonoluminescence conditions for chemical reactions. Second, LiOH was coated onto the $Co_3O_4$ nanoparticles by the same method as above. Finally, $LiCoO_2$ nanoparticles of about 10~30 nm size in diameter were obtained by the thermal treatment of the resulting LiOH-coated $Co_3O_4$ nanoparticles at $500^{\circ}C$ for 3 hr. This synthetic process is relatively quite mild and simple compared to the known method for the synthesis of $LiCoO_2$ nanoparticles. The materials synthesized were characterized by infrared spectroscopy, X-ray diffraction, inductively coupled plasma spectrometer, and high resolution-transmission electron microscopy analyses.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.179-184
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• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• Tribology and Lubricants
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• 제35권6호
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• pp.362-368
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• 2019

In this study, mechanical and tribological properties were investigated by varying the process temperature (50, 100, 125 and 150℃) to reduce internal stress. The internal stress reduction by thermal dissociation ta-C coating film with increasing temperature is confirmed through the curvature radius of the ta-C coating according to the temperature of the SUS plate. As the coating temperature increased, the mechanical properties (hardness, modulus, toughness) deteriorated, which is in agreement with the Raman analysis results. As the temperature increased, the sp² phase ratio increased owing to the dissociation of the sp³ phase. The friction and wear properties are related to the process temperature during ta-C coating. Low friction and wear properties are observed in high hardness samples manufactured at 50℃, and wear resistance properties decreased with increasing temperature. The contact area is expected to increase owing to the decrease of hardness(72 GPa to 39 GPa) and fracture toughness with increasing temperature which accelerated wear because of the debris generated. It was confirmed that at process temperature of over than 100℃, the bond structure of the carbon film changed, and the effect of excellent internal stress was reduced. However, the wear resistance simultaneously decreased owing to the reduction in fracture toughness. Therefore, in order to increase industrial utilization, optimum temperature conditions that reduce internal stress and retain mechanical properties.

• 한국수소및신에너지학회논문집
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• 제29권2호
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• pp.139-147
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• 2018

Korea Electric Power Research Institute (KEPCO RI) had developed molten carbonate fuel cell (MCFC) system since 1993. Finally, KEPCO RI developed and operated a 125 kW MCFC system in 2010. To make MCFC system compact, it is indispensable to install an ejector in this system where the anode off gas, the cathode off gas, and fresh air are mixed before flowing to the catalytic burner. KEPCO RI had developed various ejectors for MCFC system since 2006. The 125 kW MCFC system built with the developed ejector was operated successfully in Boryeong Thermal Power Plant in 2010. This 125 kW MCFC ejector was designed on the basis of the experimental results of 5 kW and 75 kW MCFC ejectors. The main goal of ejector design in our MCFC system is to maintain the entrainment ratio and the pressure between fuel cell stack and catalytic burner within the operating range. In this paper, the design results of the ejector are presented based on the 125 kW MCFC system operating conditions. In addition, a designed ejector was manufactured and installed in the MCFC system. As the fuel cell is under load operation, the pressure surrounding the ejector was measured to ensure that the fuel cell system is operating smoothly.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.67-67
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• 2008

Application of organic materials with low cost, easy fabrication and advantages of flexible device are increasing attention by research work. Recently, one of them, organic solar cells were rapidly increased efficiency with regioregular poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyricacidmethylester (PCBM) used typical material. To increased efficiency of organic solar cell has tried control of domain of PCBM and crystallite of P3HT by thermal annealing and solvent vapor annealing. [4-6] In those annealing effects, be made inefficiently efficiency, which is increased fill factor (FF), and current density by phase-separated morphology with blended P3HT and PCBM. In addition, increased conductivity by modified hole transfer layer (HTL) such as Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS), increased both optical and conducting effect by titanium oxide (TiOx), and changed cathode material for control work function were increased efficiency of Organic solar cell. In this study, we had described effect of organic photovoltaics by conductivity of interlayer such as PEDOT:PSS and TCO (Transparent conducting oxide) such as ITO, which is used P3HT and PCBM. And, we have measured with exactly defined shadow mask to study effect of solar cell efficiency according to conductivity of hole transfer layer.

• 한국세라믹학회지
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• 제42권2호
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• pp.117-122
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• 2005

나노 코팅 기술로써 빠른 증착 속도와 미세구조 제어가 용이하여 항공기 엔진 부품 열차폐 코팅으로 널리 이용되는 Electron Beam Physical Vapor Deposition (EB-PVD)세라믹 코팅 기술을 연료전지 전해질 제조에 적용하였다. EB-PVD 법을 이용하여 NiO-YSZ 기판에 YSZ 전해질을 약 10$\mu$m의 두께로 짧은 시간에 코팅하였으며 증착온도에 따라 나노 구조의 표면을 가진 YSZ 막을 얻을 수 있었다. 연료전지 전해질로서의 특성을 평가하기 위하여, 같은 조건의 코팅으로 $Al_{2}O_3$기판에 전해질을 동일한 조건으로 코팅하여 전해질의 전기적 특성을 평가하였다. 또한 양극물질로서 $LaSrCoO_3$ 분말을 일반적인 스크린 프린팅 기법으로 코팅하여 EB-PVD의 코팅을 이용한 고체산화물 연료전지 제조 가능성에 대하여 논의하였다

• 반도체디스플레이기술학회지
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• 제6권2호
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• pp.19-23
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• 2007

The blue emitting OLEDs using TMP-BiP[(4'-Benzoylferphenyl-4-yl)phenyl-methanone-Diethyl(biphenyl-4-ymethyl) phosphonate] host and DJNBD-1 dopant have been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] as a hole injection material and NPB [N,N'-bis(1-naphthyl)N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as a hole transport material were deposited on the ITO(indium tin oxide)/glass substrate by vacuum thermal evaporation method. Followed by the deposition, blue color emission layer was deposited using TMP-BiP as a host material and DJNBD-1 as a dopant. Finally, small molecule OLEDs with structure of $ITO/2-TNATA/NPB/TMP-BiP:DJNBD-l/Alq_3/LiF/Al$ were obtained by in-situ deposition of $Alq_3$, LiF and Al as the electron transport material, electron injection material and cathode, respectively. The effect of dopant into host material of the blue OLEDs was studied. The blue OLEDs with DJNBD-1 dopant showed that the maximum current and luminance were found to be about 34 mA and $8110\;cd/m^2$ at 11 V, respectively. In addition, the color coordinate was x=0.17, y=0.17 in CIE color chart, and the peak emission wavelength was 440 nm. The maximum current efficiency of 2.15 cd/A at 7 V was obtained in this experiment.

• 멤브레인
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• 제26권2호
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• pp.141-145
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• 2016

고분자전해질막은 전극 이외에 전기 화학 연료전지의 성능을 결정하는 중요한 요소이다. 고분자전해질막은 가스나 양성자 등의 작은 분자를 선택적으로 수송해야 한다. 고분자전해질막을 투과한 가스는 급속히 전기 화학적 환원을 발생시켜 음극 촉매의 열화를 유발하기 때문에 수소 장벽으로 작동해야 하며 가능한 한 빨리 양성자를 이동시켜야 한다. 지금까지 고분자전해질막의 수소 기체 투과도를 측정하는데 한정된 방법(예 : Constant volume/variable pressure (Time-lag)법)을 사용했다. 그러나 측정의 대부분은 고분자전해질막은 건조된 진공 하에서 이루어진다. 그렇지 않으면 얻어진 수소 투과도는 측정 오차가 커지는 원인이 되기 쉽다. 이 연구에서는 일반적으로 고분자전해질막으로 사용되는 Nafion212의 수소 가스 투과 특성을 온도와 습도가 동시에 제어되는 in-situ 측정 시스템을 이용하여 평가하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.29.1-29.1
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• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.