• Proceedings of the Korea Information Processing Society Conference
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• 2002.04b
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• pp.1239-1242
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• 2002

In this paper, the implementation of MAI(multiple access interference)-cancelled SSMA(spread spectrum multiple access) system using orthogonal carriers was presented. Employing the pseudo periodic spreading codes and orthogonal carriers frequency offset, proposed system have the features no MAI during a certain local time-duration. Spreading signals designed by pseudo periodic method and repetition, have zero correlation duration(ZCD) by orthogonal frequency shift method. The SSMA modem has been designed and implemented using surface-acoustic-wave(SAW) device as the matched filter of receiver. The effects of frequency offset on stability have been evaluated using computer simulation.

• Proceedings of the KIEE Conference
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• 1995.07a
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• pp.394-396
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• 1995

This paper present fuzzy control technique for the control of output voltage and improvement of UPS wave forms. General UPS has the harmonics in carrier because of output of PWM signal using analog circuit. Output voltage is controlled by selecting PWM data to improve these problems, PWM signal discreted is written on ROM and analog circuit is removed at the system and output voltage is controlled by selecting PWM data by fuzzy controller.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.252-253
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• 2000

본 실험에서는 수 MW/$ extrm{cm}^2$ 의 매우 낮은 영역의 세기에서 순수한 GaAs의 bulk에 대하여 실험한 결과 비선형 흡수가 나타남을 관찰 하였으며, 더불어 자유전하 흡수 계수를 여러 가지 세기의 빛에서 측정한 결과 자유전하 흡수 단면적이 빛의 세기에 따라 변화하는 것을 관찰하였다.$^{(1)}$ GaAs의 굴절률이 3.6으로 매우 커서 Fabry-Perot 효과가 나타나므로 시료의 한쪽 면을 SiN로 무반사 코팅을 하여 실험 하였다. GaAs의 표면은 쉽게 레이저 빛에 의해 손상을 입는 것을 고려하여 같은 자리에서 여러 번의 실험을 하여 같은 결과가 나오는 것을 확인하여 실험 결과를 얻었다. 사용된 레이저는 Nd:YAG 레이저로서 1.064 $mu extrm{m}$의 파장에서 7 나노초의 펄스를 방출한다. 빛의 세기는 편광기와 half wave plate를 이용하여 변화 시켰다. (중략)

• Korean Journal of Optics and Photonics
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• v.29 no.1
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• pp.32-39
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• 2018

The impact of the amplified spontaneous emission (ASE) on the gain recovery time of a bulk semiconductor optical amplifier (SOA) is investigated. The gain-recovery time is obtained by determining the time evolution of the gain, carrier density, and ASE in an SOA, after the propagation of a short pump pulse and continuous-wave (CW) probe of gain dynamics. In the simulation, a wide-band-semiconductor model, which can be characterized by the material gain coefficient over a wide wavelength range, is used, because the gain bandwidth of a practical SOA is very wide. The pump pulse and counterpropagating CW probe field are considered in the simulation, with the ASE noise spectrum equally divided.

• International Journal of Naval Architecture and Ocean Engineering
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• v.12 no.1
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• pp.856-867
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• 2020

This paper aims to provide the most useful method of determining an optimum LCB position and design direction of fore- and aft-body hull shape for a SLBV. It is known that the SLBV has a lower length-to-beam ratio, larger Cb and simpler stern shape designed for the installation of azimuth thrusters comparing to those of conventional LNG carriers. Due to these specific particulars of SLBV, the optimum LCB position was very different to that of conventional LNG carrier. And various approaches were applied to determine the optimum fore- and aft-body hull shape. The design direction for the optimum hull-form was evaluated as the minimization of the total resistance which includes the wave-making resistance and form-drag with numerical simulation.

• Structural Engineering and Mechanics
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• v.82 no.4
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• pp.469-476
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• 2022

A mathematical model of Lord-Shulman photo-thermal theorem induced by pulse heat flux is presented to study the propagations waves for plasma, thermal and elastic in two-dimensional semiconductor materials. The medium is assumed initially quiescent. By using Laplace-Fourier transforms with the eigenvalue method, the variables are obtained analytically. A semiconductor medium such as silicon is investigated. The displacements, stresses, the carrier density and temperature distributions are calculated numerically and clarified graphically. The outcomes show that thermal relaxation time has varying degrees of effects on the studying fields.

• Journal of Ocean Engineering and Technology
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• v.24 no.5
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• pp.16-21
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• 2010

During the loading/offloading operation of a liquefied natural gas carrier (LNGC) that is moored in a side-by-side configuration with an offshore plant, sloshing that occurs due to the partially filled LNG tank and the interactive effect between the two floating bodies are important factors that affect safety and operability. Therefore, a time-domain software program, called CHARM3D, was developed to consider the interactions between sloshing and the motion of a floating body, as well as the interactions between multiple bodies using the potential-viscous hybrid method. For the simulation of a floating body in the time domain, hydrodynamic coefficients and wave forces were calculated in the frequency domain using the 3D radiation/diffraction panel program based on potential theory. The calculated values were used for the simulation of a floating body in the time domain by convolution integrals. The liquid sloshing in the inner tanks is solved by the 3D-FDM Navier-Stokes solver that includes the consideration of free-surface non-linearity through the SURF scheme. The computed sloshing forces and moments were fed into the time integration of the ship's motion, and the updated motion was, in turn, used as the excitation force for liquid sloshing, which is repeated for the ensuing time steps. For comparison, a sloshing motion coupled analysis program based on linear potential theory in the frequency domain was developed. The computer programs that were developed were applied to the side-by-side offloading operation between the offshore plant and the LNGC. The frequency-domain results reproduced the coupling effects qualitatively, but, in general, the peaks were over-predicted compared to experimental and time-domain results. The interactive effects between the sloshing liquid and the motion of the vessel can be intensified further in the case of multiple floating bodies.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.2
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• pp.63-67
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• 2015

$TiO_2/Ag/TiO_2$ trilayer films were deposited with radio frequency (RF) and direct current (DC) magnetron sputtering onto the glass substrate to consider the influence of Ag interlayer on the optical properties of the films. The thickness of $TiO_2$ films was kept at 24 nm, while the thickness of Ag interlayer was varied as 5, 10, 15, and 20 nm. As-deposited $TiO_2$ single layer films show the optical transmittance of 66.7% in the visible wave-length region and the optical reflectance of 16.5%, while the $TiO_2$ films with a 15 nm thick Ag interlayer show the enhanced optical transmittance of 80.2% and optical reflectance of 77.8%. The carrier concentration was also influenced by Ag interlayer. The highest carrier concentration of $1.01{\times}10^{23}cm^{-3}$ was observed for a 15 nm thick Ag interlayer in $TiO_2/Ag/TiO_2$ films. The observed result means that an optimized Ag interlayer in $TiO_2/Ag/TiO_2$ films enhanced the structural and optical properties of the films.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.243-243
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• 2010

Low-temperature grown (LTG) InGaAs epilayers were grown by MBE technique for studying a correlation between terahertz (THz) emission and the intrinsic defects. The 1.2-um-thick Be-compensated LTG-InGaAs epilayers were prepared on SI-InP:Fe substrate at $200-250^{\circ}C$, and subsequently in-situ annealed under As environment at $550^{\circ}C$ for 5-30 minutes. The carrier concentration/mobility and the crystalline structure were analyzed by the Hall effect and the x-ray diffraction (XRD), respectively, and the carrier lifetime were determined by the fs time-resolved pump-probe spectroscopy. THz generation from LTG-InGaAs was carried out by a Ti-sapphire laser (800 nm) of a pulse width of 190 fs at a repetition of 76 MHz. Figure shows the spectral amplitude of generated waves in the THz region. As the growth temperature of epilayer increases, the amplitude is enhanced. However, two samples grown at $200^{\circ}C$, as-grown and annealed, show almost no difference in the spectral amplitude. This suggests that the growth temperature is critical in the formation of defect states involved in THz emission. We are now investigating the correlations between the XRD band attributed to defects, the Hall parameter, and the spectral amplitude of generated THz wave.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.11
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• pp.1297-1306
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• 2012

This work presents a 77 GHz radar transmitter for the automotive radar system. An integrated 13 GHz frequency synthesizer fabricated using 130 nm RF CMOS process drives a commercial W-band compound semiconductor monolithic multifunction amplifier(MPA), which includes a frequency multiplier by six to generate 77 GHz transmitting signal. The 13 GHz frequency synthesizer includes a high efficiency injection buffer of 4 dBm output power to drive the MPA. The output power of 77 GHz radar transmitter is higher than 13.99 dBm and the magnitude of the reference spur relative to the carrier is -36.45 dBc. The phase noise is -81 dBc/Hz at 1 MHz offset frequency from the carrier.