• Title/Summary/Keyword: Carrier state

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A Review of Studies on Antibiotic Course and Antibiotic Resistance in Nasopharyngeal Pathogens in Primary Care Setting (일차진료 항생제 치료기간과 비인두 항생제 내성률에 대한 연구 고찰)

  • Shin, Hyang Hwa;Lee, Sun Haeng;Yun, Sung Joong;Chang, Gyu Tae
    • The Journal of Pediatrics of Korean Medicine
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    • v.32 no.2
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    • pp.64-71
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    • 2018
  • Objectives The purpose of this study is to examine the correlation of antibiotics administration duration and antimicrobial resistance by reviewing domestic and foreign literatures. Methods We searched literatures dated up to 23 February, 2018 in PubMed and Cochrane Library using terms of "Anti-Bacterial Agents", "Carrier State", "Nasopharynx", "Drug Administration Schedule", and also searched via RISS (Research Information Service System), KISS (Koreanstudies Information Service System), DBpia (DataBase Periodical Information Academic) using terms of antibiotics, resistance, and dose. Results In comparison with shortened and standard antibiotic course, longer treatment duration is associated with greater antimicrobial resistance or non-significant difference, but we cannot find literature that shortened antibiotic course increases antimicrobial resistance on human nasopharyngeal flora. Conclusions Currently, there is no evidence that completing the standard antibiotic course reduces antimicrobial resistance. It can be a strategy for reducing antibiotic use to apply Korean medicine treatment, as well as short-course antibiotic therapy or delayed antibiotic prescription. Additional well-designed trials should be conducted in domestic and foreign settings about the appropriate duration of antibiotic therapy.

Studies on the canine ringworm by Microsporum canis and carrier state of dermatophytes in canine and feline (Microsporum canis에 의한 개의 피부사상균증 및 개, 고양이의 피부사상균의 보균상황)

  • Choi, Won-pil;Yun, Seong-woong;Song, Tong-chun;Lee, Choon-sik;Kim, Yung-un;Park, Chul-chung
    • Korean Journal of Veterinary Research
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    • v.33 no.2
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    • pp.235-239
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    • 1993
  • This study was performed to examine the distribution of dermatophytes in asymptomatic 454 dogs and 106 cats and in 19 dogs with skin lesions in Taegu The results obtained were summarized as follows ; The causative agent was identified a Microsporum(M) canis in 4 dogs with skin lesions. The isolation rates of dermatophytes were 10.1%(46/454) in asymptomatic dogs and 33.0%(35/106) in asymptomatic cats. The isolation rates of dermatophytes in dogs and cats were lower at house than that at pet cannel and animal care center, and that in females were higher than that in males. From dogs, 43(93.5%) of M canis and 3(6.5%) of M gypseum, and from cats, 33(94.2%) of M canis, 1(2.9%) of M gypseum and M nanum were isolated.

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Physical Layer Security Scheme Based on Polarization Modulation and WFRFT Processing for Dual-polarized Satellite Systems

  • Luo, Zhangkai;Wang, Huali;Zhou, Kaijie
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.11 no.11
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    • pp.5610-5624
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    • 2017
  • A novel scheme based on polarization modulation and the weighted fractional Fourier transform (PM-WFRFT) is proposed in this paper to enhance the physical layer security of dual-polarized satellite systems. This scheme utilizes the amplitude and phase of the carrier as information-bearing parameters to transmit the normal signal and conceals the confidential information in the carrier's polarization state (PS). After being processed by WFRFT, the characteristics of the transmit signal (including amplitude, phase and polarization state) vary randomly and in nearly Gaussian distribution. This makes the signal very difficult for an eavesdropper to recognize or capture. The WFRFT parameter is also encrypted by a pseudo-random sequence and updated in real time, which enhances its anti-interception performance. Furthermore, to prevent the polarization-based impairment to PM-WFRFT caused by depolarization in the wireless channel, two components of the polarized signal are transmitted respectively in two symbol periods; this prevents any mutual interference between the two orthogonally polarized components. Demodulation performance in the system was also assessed, then the proposed scheme was validated with a simulated dual-polarized satellite system.

Heterojunction Solar Cell with Carrier Selective Contact Using MoOx Deposited by Atomic Layer Deposition (원자층 증착법으로 증착된 MoOx를 적용한 전하 선택 접합의 이종 접합 태양전지)

  • Jeong, Min Ji;Jo, Young Joon;Lee, Sun Hwa;Lee, Joon Shin;Im, Kyung Jin;Seo, Jeong Ho;Chang, Hyo Sik
    • Korean Journal of Materials Research
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    • v.29 no.5
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    • pp.322-327
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    • 2019
  • Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

Analysis of Positive Bias Temperature Instability Degradation Mechanism in n+ and p+ poly-Si Gates of High-Voltage SiO2 Dielectric nMOSFETs (고전압 SiO2 절연층 nMOSFET n+ 및 p+ poly Si 게이트에서의 Positive Bias Temperature Instability 열화 메커니즘 분석)

  • Yeohyeok Yun
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.16 no.4
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    • pp.180-186
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    • 2023
  • Positive bias temperature instability (PBTI) degradation of n+ and p+ poly-Si gate high-voltage(HV) SiO2 dielectric nMOSFETs was investigated. Unlike the expectation that degradation of n+/nMOSFET will be greater than p+/nMOSFET owing to the oxide electric field caused by the gate material difference, the magnitude of the PBTI degradation was greater for the p+/nMOSFET than for the n+/nMOSFET. To analyze the cause, the interface state and oxide charge were extracted for each case, respectively. Also, the carrier injection and trapping mechanism were analyzed using the carrier separation method. As a result, it has been verified that hole injection and trapping by the p+ poly-Si gate accelerates the degradation of p+/nMOSFET. The carrier injection and trapping processes of the n+ and p+ poly-Si gate high-voltage nMOSFETs in PBTI are detailed in this paper.

Review : Hydrogen Storage in Solid State (고체상 수소저장기술 동향)

  • Lee, Jun-Wung
    • Journal of the Korea Institute of Military Science and Technology
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    • v.13 no.6
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    • pp.1153-1171
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    • 2010
  • Hydrogen is the most abundant element in the universe. Although hydrogen can produce three times more energy than gasoline and seven times than coal, the most challenging problem in utilizing hydrogen as energy carrier is its storage problem. In contrast to the liquid hydrocarbon, hydrogen can not be stored or transported easily and safely because of its extremely low boiling point(21K). Recently scientists have made a tremendous achievement in storing hydrogen capacity in solid state materials such as carbon based and metal organic frameworks materials as well as metal hydrides. In this review the author reviewed the status of the hydrogen storage technologies in solid state, the advantages and disadvantages in each category of materials and the future prospects of hydrogen storage.

Plasma nitridation of atomic layer deposition-Al2O3 by NH3 in PECVD

  • Cha, Ham cho rom;Cho, Young Joon;Chang, Hyo Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.304.1-304.1
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    • 2016
  • We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

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An Interference Isolation Method for Wireless Power and Signal Parallel Transmissions on CPT Systems

  • Zhou, Wei;Su, Yu-Gang;Xie, Shi-Yun;Chen, Long;Dai, Xin;Zhao, Yu-Ming
    • Journal of Power Electronics
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    • v.17 no.1
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    • pp.305-313
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    • 2017
  • A novel interference isolation method is proposed by using several designed coils in capacitive power transfer systems as isolation impedances. For each designed coil, its stray parameters such as the inter-turn capacitance, coil resistance and capacitance between the coil and the core, etc. are taken into account. An equivalent circuit model of the designed coil is established. According to this equivalent circuit, the impedance characteristic of the coil is calculated. In addition, the maximum impedance point and the corresponding excitation frequency of the coil are obtained. Based on this analysis, six designed coils are adopted to isolate the interference from power delivery. The proposed method is verified through experiments with a power carrier frequency of 1MHz and a data carrier frequency of 8.7MHz. The power and data are transferred parrallelly with a data carrier attenuation lower than -5dB and a power attenuation on the sensing resistor higher than -45dB.

Bow hull-form optimization in waves of a 66,000 DWT bulk carrier

  • Yu, Jin-Won;Lee, Cheol-Min;Lee, Inwon;Choi, Jung-Eun
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.9 no.5
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    • pp.499-508
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    • 2017
  • This paper uses optimization techniques to obtain bow hull form of a 66,000 DWT bulk carrier in calm water and in waves. Parametric modification functions of SAC and section shape of DLWL are used for hull form variation. Multi-objective functions are applied to minimize the wave-making resistance in calm water and added resistance in regular head wave of ${\lambda}/L=0.5$. WAVIS version 1.3 is used to obtain wave-making resistance. The modified Fujii and Takahashi's formula is applied to obtain the added resistance in short wave. The PSO algorithm is employed for the optimization technique. The resistance and motion characteristics in calm water and regular and irregular head waves of the three hull forms are compared. It has been shown that the optimal brings 13.2% reduction in the wave-making resistance and 13.8% reduction in the added resistance at ${\lambda}/L=0.5$; and the mean added resistance reduces by 9.5% at sea state 5.

A Study on the In-Pipe Surge Analysis for Cargo Unloading Piping System of LNG Carrier (LNG선의 화물 하역 배관망의 과도 응답 해석에 관한 연구)

  • Chun, Byung-Il;Woo, Jong-Sik
    • Journal of the Society of Naval Architects of Korea
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    • v.33 no.1
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    • pp.124-134
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    • 1996
  • In this paper the pressures and flowrate distributions in the loading/unloading piping system of LNG carrier have been investigated in the case of unsteady flow state as well as steady one. Under emergency situation the main cargo pumps are forced to fail, and the ESD(Emergency Shut Down) valves and Stop valves are closed within set-time. The surge pressures according to the variations of valve closing time have been computed to recognize the surge phenomenon due to sudden decrease of flowrate. By means of these analysis results, the most important factors on the in-pipe surge phenomenon of cargo loading/unloading piping system of LNG Carrier are the type of ESD and Stop valves, valve closing time, and the pipe arrangements.

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