• Journal of Navigation and Port Research
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• v.37 no.1
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• pp.1-7
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• 2013

In this paper the developed prediction technique of wave-making resistance performance for a ship attached with a vertical blade had been verified. Numerical analysis program as a prediction technique had been developed using the Rankine source panel method and the vortex lattice method(VLM). The nonlinearity of the free surface conditions was fully taken into account using the iterative method and the trim and the sinkage of the ship were also considered in the numerical analysis program. Panel cutting method was applied to get hull surface panels. Numerical computations were carried out for a 4000TEU container carrier and the vertical blade was attached 6 different locations astern. To investigate the validity of the numerical analysis program the commercial viscous flow field analysis program FLUENT was used to obtain the viscous flow field around the ship and the model test was performed. The model test results were compared with the numerical analysis results.

• Bulletin of the Korean Chemical Society
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• v.27 no.9
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• pp.1335-1340
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• 2006

It has been found that a number of diseases are associated with mutations in the mitochondrial DNA. Therapeutic gene delivery to mitochondria has been suggested as a clinical option for these diseases. In this study, we developed a gene carrier to mitochondria by the conjugation of mitochondrial leader peptide (LP) to polyethylenimine (PEI). Mitochondrial LP conjugated PEI (PEI-LP) was synthesized with low molecular weight PEI (2,000 Da, PEI2K). Gel retardation assay showed that PEI2K-LP formed complexes at a 1.0/1 weight ratio. In addition, PEI2K-LP protected DNA from the enzymatic degradation for at least 60 min, while naked DNA was completely degraded within 20 min. PEI2K-LP was compared with LP conjugated high molecular weight PEI (25,000 Da, PEI25K) in terms of toxicity and delivery efficiency. MTT assay showed that PEI2K-LP had much lower cytotoxicity than PEI25K-LP to 293 cells. In addition, cell-free DNA delivery assay showed that PEI2K-LP delivered more DNA to mitochondria at a 1.8/1 weight ratio than naked DNA or PEI. This result suggests that PEI2K-LP may be useful for the development of mitochondrial gene therapy system with lower cytotoxicity.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.294.1-294.1
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• 2016

Transition metal dichalcogenides (TMDs) with two-dimensional layered structure, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), are considered attractive materials for future semiconductor devices due to its relatively superior electrical, optical, and mechanical properties. Their excellent scalability down to a monolayer based on the van der Waals layered structure without surface dangling bonds makes semiconductor devices based on TMD free from short channel effect. In comparison to the widely studied transistor based on MoS2, researchs focusing on WSe2 transistor are still limited. WSe2 is more resistant to oxidation in humid ambient condition and relatively air-stable than sulphides such as MoS2. These properties of WSe2 provide potential to fabricate high-performance filed-effect transistor if outstanding electronic characteristics can be achieved by suitable metal contacts and doping phenomenon. Here, we demonstrate the effect of two different metal contacts (titanium and platinum) in field-effect transistor based on WSe2, which regulate electronic characteristics of device by controlling the effective barreier height of the metal-semiconductor junction. Electronic properties of WSe2 transistor were systematically investigated through monitoring of threshold voltage shift, carrier concentration difference, on-current ratio, and field-effect mobility ratio with two different metal contacts. Additionally, performance of transistor based on WSe2 is further enhanced through reliable and controllable n-type doping method of WSe2 by triphenylphosphine (PPh3), which activates the doping phenomenon by thermal annealing process and adjust the doping level by controlling the doping concentration of PPh3. The doping level is controlled in the non-degenerate regime, where performance parameters of PPh3 doped WSe2 transistor can be optimized.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.257.1-257.1
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• 2015

Cu(In,Ga)Se2 (CIGS) 박막 태양 전지에서 buffer layer는 CIGS 흡수층과 TCO 사이의 밴드갭 차이에 대한 문제점과 lattice mismatch를 해결하기 위해 필수적이다. 흔히 buffer layer 물질로는 CdS가 가장 많이 사용되고 있으나 Cd의 독성에 관한 문제가 야기되고 있다. 따라서 ZnS(O, OH) buffer layer가 친환경 물질로 기존의 CdS 버퍼 층의 대체 물질로 각광 받고 있으며, 단파장 범위에서 높은 투과율로 인해 wide band gap의 Chalcopyrite 태양 전지에 응용되는 buffer layer로 많은 연구가 이루어지고 있다. 또한 buffer layer를 최적화 하여 carrier lifetime과 양자 효율이 증가시킬 수 있는 특성을 가지고 있다. 이 연구에서는 Cu(In,Ga)Se2 (CIGS) 박막에 화학습식공정 (CBD) 방법을 이용하여 최적화된 ZnS(O, OH)의 증착 조건을 찾고, 고품질의 buffer layer를 제조하기 위한 실험에 초점을 맞췄다. 또한, buffer layer의 막질을 개선하고 균일한 막을 제조하기 위해 processing parameters인 시약의 농도, 제조 시간 및 온도 등의 다양한 변화를 통해 실험을 진행하였다. 그 후 최적화된 ZnS(O, OH) buffer layer의 특성 분석을 위해 X-ray diffraction(XRD), photoluminescence (PL), scanning electron microscope (SEM) and GD-OES을 이용하였고, 이를 통해 제조된 CIGS 박막 태양전지는 light induced current-voltage (LIV) and external quantum efficiency (EQE)를 통해 특성 분석을 실시 하였다. 결과적으로, 제조된 ZnS(O, OH) buffer layer의 $ZnSO4{\cdot}7H2O$의 농도는 0.16 M, Thiourea는 0.5 M, NH4OH는 7.5 M, 그리고 반응 온도는 77.5 oC의 조건 하에 CIGS 기판 위에 균일하고 균열이 없는 ZnS(O, OH) 박막을 제조하였으며 이때 제조된 태양전지의 소자 특성은 Voc = 0.478 V, Jsc = 35.79 mA/cm2, FF = 47.77%, ${\eta}=8,18 %$이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.445-454
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• 2001

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect fby van der Pauw method are 9.62x10$^{16}$ cm$^{-3}$ , 296$\textrm{cm}^2$/V.s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film we have found that he values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 7meV and 5.9meV, respectivity. by Haynes rule, an activation energy of impurity was 50 meV.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.5
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• pp.787-793
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• 2018

In this paper, we propose a new single carrier - frequency domain equalization (SC-FDE) structure to cope with narrow band interference. In the conventional SC-FDE structure, when a high-power narrow band interference exists, channel estimation and data recovery is difficult. To relieve from this problem, this paper proposes a new SC-FDE frame structure to enable frequency-domain channel estimation in the environments that exist narrow band interference. Specifically, in the conventional method, the channel estimation is performed in time-domain first and from that, the frequency-domain channel is obtained by Fourier transform. In contrast, we proposed a new SC-FDE structure to enable frequency-domain channel estimation directly from received signals without time-domain channel estimation. The receiver performance improvement is verified through computer simulation. According to the results, the proposed technique can detect the signal with less than 2 dB loss compared with jammer-free environments, while the conventional method does not communicate with each other.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.125-126
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• 2006

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$. $345cm^2/V{\cdot}s$ at 293 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ},X$) having very strong peak intensity. Then. the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule. an activation energy of impurity was 137 meV.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.591-595
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE) and its some properties were investigated. The GaN substrate, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 100$\textrm{mm}^2$ area, were obtained by HVPE growth of thick film GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of $C_o$= 5.18486 $\AA$ and a FWHM of DCXRD was 650 arcsec for the single crystalline GaN substrate. The low temperature PL spectrum consist of three excitonic emission and a deep D- A pair recombination at 1.8eV. The Raman E, (high) mode frequency was 567$cm^{-1}$ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283$cm^3$<\ulcornerTEX>/ V.sand 1.1$\times$$10^{18}cm^{-3}$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.36-36
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• 1995

The cubic (zinc blende) CdSe eppilayers were grown on GaAs(100) substrates by electron beam (e-beam) evapporation technique. X-ray scans with copper $K\alpha$ radiation indicate that the CdSe eppilayers are zinc blende. The lattice pparameter obtained from the (400) reflection is 6.077$\AA$, which is in excellent agreement with the value repported in the literature for zinc blende CdSe. The orientation of as-grown CdSe eppilayer is determined by electron channeling ppatterns(ECpp). The crystallinity of heteroeppitaxial CdSe layers were investigated based on the double crystal x-ray rocking curve(DCRC). The deppendence of the rocking curve width on layer thickness was studied. The FWHM(full width at half maximum) of CdSe eppilayers grown on GaAs(100) substrates is decreasing with increasing eppilayer thickness. The carrier concentration and mobility of the as-grown eppilayers deduced Hall data by van der ppauw method, are about 7$\times$1017 cm-3 and 2$\times$102 $\textrm{cm}^2$ / sec at room tempperature, resppectively. The energy gapp was determinded from the pphotocurrent sppectrum. In pphotocurrent sppectrum of a 1-${\mu}{\textrm}{m}$-thick CdSe eppilayer at 30K, the ppeak at 1.746 eV is due to the free exciton of cubic CdSe. In summary, We have shown that eppilayers of zinc blende CdSe can be grown on GaAs(100) substrates by e-beam, desppite the large mismatch between eppilayer and substrate, as well as the natural ppreference for CdSe to form in the wurtzite structure.

• Journal of Positioning, Navigation, and Timing
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• v.6 no.4
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• pp.211-221
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• 2017

Ellipsodially referenced survey (ERS) is considered as one of the challenging issues in the hydrographic surveys due to the fact that the bathymetric data collected by this technique can be readily transformed either to the geodetic or the chart datum by application of some geoscientific models. Global Navigation Satellite Systems (GNSS) is a preferred technique to determine the ellipsoidal height of a vessel reference point (RP) because it provides cost-effective and unprecedentedly accurate positioning solutions. Especially, the GNSS-derived heights include heave and dynamic draft of a vessel, so as for the reduced bathymetric solutions to be potentially free from these corrections. Although over the last few decades, differential GNSS (DGNSS) has been widely adopted in the bathymetric surveys, it only provides limited accuracy of the vertical component. This technical barrier can be effectively overcome by adopting the so-called GNSS carrier phase (CPH) based techniques, enhancing accuracy of the height solution up to few centimeters. From the positioning algorithm standpoint, the CPH-based techniques are categorized under absolute and relative positioning in post-processing mode; the former is precise point positioning (PPP) correcting errors by the global or regional models, the latter is post-processed kinematic positioning (PPK) that uses the differencing technique to common error sources between two receivers. This study has focused on assessment of achievable accuracy of the ellipsoidal heights obtained from these CPH-based techniques with a view to their applications to hydrographic surveys where project area is, especially, few tens to hundreds kilometers away from the shore. Some field trials have been designed and performed so as to collect GNSS observables on static and kinematic mode. In this paper, details of these tests and processed results are presented and discussed.