• Structural Engineering and Mechanics
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• v.46 no.5
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• pp.629-644
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• 2013

This paper concerns about the raking damages on the ultimate residual hull girder strength of bulk carriers by applying the modified R-D diagram (advanced method). The limited raking damage scenarios, based on the IMO's probability density function of grounding accidents, were carried out by using sampling technique. Recently, innovative method for the evaluation of the structural condition assessment, which covers the residual strength and damage index diagram (R-D diagram), was proposed by Paik et al. (2012). This concept is applied in the present study and modified R-D diagram, which can be considered vessel size effect, is then proposed. Four different types of bulk carrier structures, i.e., Handysize (37K), Supramax (57K), Kamsarmax (82K) and Capesize (181K) by Common Structural Rule (CSR), were applied to draw the general tendency. The ALPS/HULL, intelligent supersize finite element method, was employed for the ultimate longitudinal strength analysis. The obtained empirical formulas will be useful for the condition assessment of bulk carrier structures. It can also cover different sizes of the bulk carriers in terms of ultimate longitudinal strength. Important insights and findings with useful guidelines developed in this study are summarized.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.164.2-164.2
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• 2014

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of $329.7{\pm}16.9cm^2/V{\cdot}s$, and a high on-off ratio of $10^5$. The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.243-247
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• 2014

Spherical NiO-YSZ particles were synthesized by ultrasonic spray pyrolysis (USP). The morphology of the synthesized particles can be modified by controlling parameters such as precursor pH, carrier-gas flow-rate, and temperature of the heating zone. The synthesized spherical NiO-YSZ particles have rough surface morphology at high carrier-gas flow-rates due to rapid gas exhaustion and insufficient particle ordering. The Ni-YSZ cermet anode synthesized by ultrasonic spray pyrolysis at a flow rate of l L/min, with precursor solution at pH4, showed a higher maximum power density of 256 $mW/cm^2$ compared to a conventionally mixed Ni-YSZ anode (185 $mW/cm^2$) at $800^{\circ}C$. While the area-specific resistance of conventionally mixed Ni-YSZ anodes increases gradually with operation time (indicating performance degradation), the Ni-YSZ anode synthesized by USP does not exhibit any performance degradation, even after 500 h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.75-81
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• 2003

This study evaporates ZnO layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1{\varepsilon}_2)$ has larger peak values as it’s thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.67.1-67.1
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• 2012

Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.

• Polymer(Korea)
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• v.36 no.4
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• pp.519-524
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• 2012

Capacitance measurements of the polymer light-emitting diodes (PLEDs) with conjugated polyelectrolyte (CPE) electron transporting layers (ETLs) provide important information of device physics for understanding the function of CPEs as ETLs, together with current density-voltage-luminescence measurements. We investigated the counterion-dependent capacitance behaviors that present a highly negative or positive capacitance at the low frequency, and suggested different carrier injection mechanisms. Capacitance model study reveals that the electron injection mechanism can be described either by the dipole alignment scheme or by electronic charge carrier accumulation at the cathode/ETL/emission layer interfaces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.321-326
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• 2016

Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.73-79
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• 2002

This study evaporates ZnO layer thickness' differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1,{\varepsilon}_2)$ has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.81-85
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• 2000

The effects of $NH_3$ flow rate and reactor pressure on Al composition and the interface of AlGaN/GaN heterostructure were studied. Equilibrium partial pressure of Ga and Al over AiGaN alloy was calculated as a function of growth pressure, $NH_3$flow rate and temperature. It was found equilbrium vapor pressure of Al is significantly lower than that of Ga, thus, the alloy composition mainly controlled by Ga partial pressure. We believe that more decomposition of Ga occur at lower $NH_3$ flow rate and higher growth pressure leads to preferred Al incorporation into AlGaN. The alloy composition gradient became larger at AlGaN/GaN heterointerface at higher reactor pressures, higher Al composition and low $NH_3$ flow rate. This composition gradient lowered sheet carrier concentration and electron mobility as well. We obtained an AlGaN/GaN heterostructure with sheet carrier density of ${\sim}2{\times}10^{13}cm^{-2}$ and mobility of 1250 and 5000 $cm^2$/Vs at 300 K and 100 K, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.63-63
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• 2010

Ability to transport extracted carriers from NQDs is essential for the development of most NQD based applications. Strategies to facilitate carrier transport while preserving NQDs' optical characteristics include: 1) Fabricating neat films of NQDs with modified surfaces either by adapting series of ligands with certain limitations or by applying physical processes such as heat annealing 2) Coupling of NQDs to one-dimensional nanostructures such as single walled carbon nanotubes (SWNTs) or various types of nanowires. NQD-nanowire hybrid nanostructures are expected to facilitate selective wavelength absorption, charge transfer to 1-D nanostructures, and efficient carrier transport. Even with the vast interests in using NQD-SWNT hybrid materials in optoelectric applications, still, no reports so far have clearly elucidated the optoelectric behavior when they were assembled on the FET mainly because the complexity involving in both components in their preparation and characterization. We have monitored the optical properties of both components (NQDs, SWNTs) from the synthesis, to the assembly, and to the device. More importantly, by using pyridine molecules as a linker to non-covalently attach NQDs to SWNTs, we were able to assemble NQDs on SWNTs with precise density control without harming their electronic structures. Furthermore, by measuring electrical signals from the fabricated aligned SWNTs-FET using dielectrophoresis (DEP), we were able to elucidate the charge transfer mechanism.