• 제목/요약/키워드: Carrier density

검색결과 547건 처리시간 0.03초

Modulated Carrier Control for Interleaved Continuous Conduction Mode(CCM) Boost Power Factor Correction Converter

  • Kim, Hye-jin;Choi, Kyu-sik;Cho, B.H.;Choi, Hang-seok
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2012년도 전력전자학술대회 논문집
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    • pp.195-196
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    • 2012
  • In recent years, in an effort to improve the efficiency and the power density of the front-end power factor correction(PFC), the interleaving of multiple converter is employed. The conventional interleaved continuous conduction mode(CCM) boost PFC converter requires input and output voltage sensing and three current sensing to obtain current balancing between modules. In this paper, the interleaved CCM PFC converter based on modulated carrier control is proposed. With the proposed method, two phase interleaved PFC can be realized simply without line voltage sensing resistor and can achieve current balancing without additional current sensing resistor on common return path. The simulation studies are carried out to verify the effectiveness of the proposed control scheme.

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Transport property of a Se:As films for digital x ray imaging

  • 김재형;김재형
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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    • pp.85-88
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    • 2006
  • The transport properties of amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. The effects of As addition on the carrier mobility and recombination lifetime in amorphous selenium (a-Se) films have been studied using the moving photocarrier grating (MPG) technique. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with the drift mobilities of holes and electrons obtained by time of flight (TOF) measurement.

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4H-SiC(0001) Epilayer 성장 및 쇼트키 다이오드의 전기적 특성 (4H-SiC(0001) Epilayer Growth and Electrical Property of Schottky Diode)

  • 박치권;이원재;;신병철
    • 한국전기전자재료학회논문지
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    • 제19권4호
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    • pp.344-349
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    • 2006
  • A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.

폴리우레탄 폼의 동적 응답에 미치는 밀도 및 온도의 영향 (Dynamic Response of Polyurethane Foam with Density and Temperature Effects)

  • 황병관;김정현;김정대;이제명
    • 대한조선학회논문집
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    • 제56권4호
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    • pp.291-297
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    • 2019
  • Polyurethane foam is the most efficient, high-performance insulation material, used for liquefied natural gas carrier (LNGC) insulation. Because LNGC is exposed to sloshing impact load due to ship motion of 6 degrees of freedom, polyurethane foam should be sufficient dynamic properties. The dynamic properties of these polyurethane foam depends on temperature and density. Therefore, this study investigates the dynamic response of polyurethane foam for various temperature($25^{\circ}C$, $-70^{\circ}C$, $-163^{\circ}C$) and density($90kg/m^3$, $113kg/m^3$, $134kg/m^3$, $150kg/m^3$) under drop impact test with impact energy of 20J, 50J, and 80J. For dynamic response was evaluated in terms of peak force, peak displacement, absorb energy, and the mechanical property with minimized density effects. The results show the effect of temperature and density on the polyurethane foam material for the dynamic response.

살조세균 Pseudomonas fluorescens HYK0210-SK09의 두 가지 담체 포집능과 이를 이용한 microcosm에서 Stephanodiscus hantzschii (Bacillariophyceae)의 살조능 연구 (Algicidal Effect of Immobilized Bacteria against S. hantzschii in Microcosm)

  • 정승원;김영옥;한명수
    • 환경생물
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    • 제27권3호
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    • pp.244-251
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    • 2009
  • 두 가지 다른 기질의 담체를 이용하여 살조세균 Pseudomonas fluorescens HYK0210-SK09의 포집율과 microcosm에서 Stephanodiscus hantzschii의 살조능을 파악하였다. Active carbon polyvinyl alcohol (ACPA)담체가 cellulose sponge (CS)담체보다 SK09를 높게 포집하였다. 이를 이용한 microcosm에서 ACPA담체가 CS담체보다 S. hantzschii의 살조능이 높았으며 지속적이었다. 특히 ACPA담체에서는 낮은 전기전도도를 나타내어 S. hantzs-chii 분해에 따른 용출된 이온들을 흡수하고 있음을 판단할 수 있었다. 따라서 ACPA담체를 이용한 유해조류 제어는 지속적 제어와 함께 생태계의 교란을 최소화할 것으로 판단된다.

대역제한 백색잡음 재밍환경에서 GPS L1 C/A 신호를 위한 유효 반송파 대 잡음 전력비 추정치의 CRLB (Cramer-Rao Lower Bound of Effective Carrier-to-noise Power Ratio Estimation for a GPS L1 C/A Signal under Band-limited White Noise Jamming Environments)

  • 유승수;염동진;지규인;김선용
    • 제어로봇시스템학회논문지
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    • 제20권8호
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    • pp.890-894
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    • 2014
  • In this paper, we derive the CRLB (Cramer-Rao Lower Bound) of effective carrier-to-noise power ratio ($C/N_0$) estimation for a GPS (Global Positioning System) L1 C/A (Coarse/Acquisition) signal under band-limited white noise jamming environments. The quality of a received GPS signal is commonly described in terms of its $C/N_0$, implying that the noise is white and thus can be described by scalar noise density. However, if some intentional interference is received to a victim GPS receiver, then the $C/N_0$ is no longer the efficacious performance indicator. The correct and straightforward measurement to analyze the receiving situation is the effective $C/N_0$. In this paper, we consider a band-limited white noise jamming whose bandwidth is 2MHz and is the same as one of the first null-to-null bandwidth of the GPS L1 C/A signal.

레이저 다이오드의 전기적 미분특성에 관한 연구 (Electrical Derivative Characteristics of Lsaer Diodes)

  • 김창균;도만희;김상배
    • 전자공학회논문지A
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    • 제30A권7호
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    • pp.38-46
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    • 1993
  • Based on the close correlation between the optoelectronic and electrical characteristics of laser diodes, this paper is to present an exact model for electrical characteristics of laser diodes with bulk active layers so that the optoelectronic characteristics may be estimated from the electrical Characteristics. Among the considered models, the most exact model is shown to be one which uses the Fermi-Dirac integral and the bimolecular recombination and takes into account the energy-gap shrinkage with the injected carrier density.

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Progess in Fabrication Technologies of Polycrystalline Silicon Thin Film Transistors at Low Temperatures

  • Sameshima, T.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.129-134
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    • 2004
  • The development of fabrication processes of polycrystalline-silicon-thin-film transistors (poly-Si TFTs) at low temperatures is reviewed. Rapid crystallization through laser-induced melt-regrowth has an advantage of formation of crystalline silicon films at a low thermal budget. Solid phase crystallization techniques have also been improved for low temperature processing. Passivation of $SiO_2$/Si interface and grain boundaries is important to achieve high carrier transport properties. Oxygen plasma and $H_2O$ vapor heat treatments are proposed for effective reduction of the density of defect states. TFTs with high performance is reported.

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Nano scale characterizations of semiconductor materials and devices with SPM

  • Park, Sang-il
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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    • pp.19-19
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    • 1998
  • Scanning pprobe Microscoppy (SppM) is a ppowerful surface chracterization technology which can measure not only surface toppograpphy but also various ppropperties of the sampple with unpprecedented sensitivity and sppatial resolution. Recent developpment of electrostatic force microscoppe (EFM) and scanning cappacitance microscoppe (SCM) allows us to measure surface ppotential distribution and cappacitance variation n semiconductor devices. The cappacitance image pprovide us valuable information on carrier density and dopping pprofile.

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위상최적설계를 이용한 BLDC 모터의 자석 설계 (Magnet Design of BLDC Motor using Topology Optimization)

  • 박승규;강제남;왕세명;노정채
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 B
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    • pp.831-833
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    • 2003
  • BLDC (Blush-Less Direct Current) motors are widely used for machine tools and ODD (Optic Disc Drive). Topology Optimization is applied to the rotor of a BLDC motor to improve in efficiency and save money. Density method and design sensitivity are derived. The result of topology optimization shows better performance.

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