• 제목/요약/키워드: Carbon nanowire

검색결과 58건 처리시간 0.024초

구리 나노와이어 투명 전극의 산화 방지 기술 (Review on Oxidation Resistance Technology for Copper Nanowire Transparent Electrodes)

  • 이기업;노호균;김형구;하준석
    • 마이크로전자및패키징학회지
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    • 제30권2호
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    • pp.21-32
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    • 2023
  • 구리 나노와이어(CuNW)는 전기 전도도가 우수할 뿐만 아니라 높은 기계적 유연성과 비용 효율성 등의 장점이 있다. 그러나 구리 나노와이어는 산화가 쉽게 일어나기 때문에 투명 전극의 특성까지도 저하될 수 있다는 단점 또한 존재한다. 따라서, 이러한 문제점을 해결하기 위한 연구들이 진행되고 있다. 이에 본 고에서는 탄소 기반 물질, 금속, 전도성 고분자 등의 코팅용 소재를 활용하여 구리 나노와이어 투명전극의 산화를 방지하고 안정성을 향상시키기 위한 다양한 방법과 연구를 소개한다. 이를 통해 구리 나노와이어 기반 기술의 발전과 산화에 대한 문제를 해결할 수 있는 방안들을 제공하고자 한다.

Synthesis of Uniformly Doped Ge Nanowires with Carbon Sheath

  • 김태헌;장야무진;최순형;서영민;이종철;황동훈;김대원;최윤정;황성우;황동목
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.289-289
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    • 2013
  • While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

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Preparation of Gallium Nitride Powders and Nanowires from a Gallium(III) Nitrate Salt in Flowing Ammonia

  • Jung, Woo-Sik
    • Bulletin of the Korean Chemical Society
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    • 제25권1호
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    • pp.51-54
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    • 2004
  • Gallium nitride (GaN) powders were prepared by calcining a gallium(III) nitrate salt in flowing ammonia in the temperature ranging from 500 to 1050 $^{\circ}C$. The process of conversion of the salt to GaN was monitored by X-ray diffraction and $^{71}Ga$ MAS (magic-angle spinning) NMR spectroscopy. The salt decomposed to ${\gamma}-Ga_2O_3$ and then converted to GaN without ${\gamma}-{\beta}Ga_2O_3$ phase transition. It is most likely that the conversion of ${\gamma}-Ga_2O_3$ to GaN does not proceed through $Ga_2O$ but stepwise via amorphous gallium oxynitride ($GaO_xN_y$) as intermediates. The GaN nanowires and microcrystals were obtained by calcining the pellet containing a mixture of ${\gamma}-Ga_2O_3$ and carbon in flowing ammonia at 900 $^{\circ}C$ for 15 h. The growth of the nanowire might be explained by the vapor-solid (VS) mechanism in a confined reactor. Room-temperature photoluminescence spectra of as-synthesized GaN powders obtained showed the emission peak at 363 nm.

탄소나노튜브/$V_2O_5$ 나노선 헤테로 구동소자 특성연구 (Research for MWCNTs/$V_2O_5$ Nanowire Hetero-Junction Actuator Devices)

  • 이강호;이성민;박소정;허정환;김규태;박성준;하정숙
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.83-84
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    • 2005
  • 생명체의 근육을 구성하는 근섬유와 마찬가지로 나노선 구동기는 불규칙적으로 엉켜있는 나노선들의 집합으로 이루어져 있으며, 기존의 강유전체에 기반을 둔 구동기에 비해 낮은 구동전압과 높은 일률을 가진다. 대표적인 나노선인 MWCNTs(Multi-walled Carbon Nanotubs)와 $V_2O_5$ 나노선을 이용한 구동기는 이미 각각 시현된 바 있으나, 이 둘의 이종접합을 통한 구동기는 아직까지 보고되지 않았다. 본 연구에서는 탄소나노튜브와 $V_2O_5$의 이종접합을 통해 필름 형태의 구동기를 구현하여 각각의 나노선 만을 이용했을 때보다 월등한 성능을 보여주는 구동기를 구현하였다. 향후 실용화 가능성을 염두에 두어, 보다 강건하고 최적화된 나노선 sheet의 합성과 구동기의 구조적 향상이 이루어진다면 그동안 알려진 그 어떤 물질보다도 우수한 구동특성을 보여줄 것이라 예상된다.

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Fabrication and Ammonia Gas Sensing Properties of Chemiresistor Sensor Based on Porous Tungsten Oxide Wire-like Nanostructure

  • Vuong, Nguyen Minh;Kim, Do-Jin;Hieu, Hoang Nhat
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.25.2-25.2
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    • 2011
  • The tungsten oxide wire-like nanostructure is fabricated by deposition and thermal oxidation of tungsten metal on porous single wall carbon nanotubes (SWNTs). The morphology and crystalline quality of materials are investigated by SEM, TEM, XRD and Raman analysis. The results prove that $WO_3$ wire-like nanostructure fabricated on SWNTs show highly porous structures. Exposure of the sensors to NH3 gas in the temperature range of 150~300$^{\circ}C$ resulted in the highest sensitivity at $250^{\circ}C$ with quite rapid response and recovery time. Response time as a function of test concentrations and NH3 gas sensing mechanism is reported and discussed.

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탄소나노튜브와 은나노와이어 복합 유연투명전극 필름 기술 (Nanocarbon/silver Nanowire Hybrid Flexible Transparent Conducting Film Technology)

  • 한중탁
    • 한국표면공학회지
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    • 제49권4호
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    • pp.323-330
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    • 2016
  • The flexible transparent conducting films (TCFs) are required to realize flexible optoelectronic devices. 1D nanomaterials such as carbon nanotubes (CNTs), metal nanowires are good candidates to replace indium tin oxide that is currently used to fabricate transparent electrode. Particularly, silver nanowires are used to produce flexible TCFs. In this review, we introduce TCF technologies based on silver nanowires/CNTs hybrid structures. CNTs can compromise drawbacks of silver nanowires for applications in high performance TCFs for optoelectronic devices.

실크 스크린 프린팅 기법을 적용한 용액 기반의 탄소나노튜브와 은 나노 와이어 코팅 기술 개발 (Development of Solution-based Carbon Nanotube and Silver Nanowire Coating Technology using Silk Printing Technique)

  • 김무진
    • 산업융합연구
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    • 제21권9호
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    • pp.33-39
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    • 2023
  • 나노 크기의 물질은 여러 기판에 코팅이 가능하며, 이 소재는 투명하며, 전도성이 있기 때문에 전자소자의 투명전극이나 전원 공급용 전극으로 활용이 가능하다. 본 연구에서는 CNT와 Ag 나노와이어를 실크스크린 기법을 이용하여 반복적으로 코팅하였으며, 5번까지 형성한 샘플을 제작하여, 광학 및 전기 특성을 측정하고, 분석하였다. 실크스크린 코팅된 샘플 표면은 코팅 방향에 의한 자국이 형성되었음을 확인하였으며, 코팅한 횟수에 따른 투과도 및 표면 저항의 경향성을 조사하였다. 코팅 횟수가 늘어남에 따라 투과도 및 표면 저항은 감소하는 경향을 나타내었다. 특히 투과도의 경우 2번과 5번에서 변화폭이 컸으며, 이러한 변화는 Ag 나노와이어 코팅에 의한 것으로 확인되었다. 또한, 700nm를 기점으로 이전 파장 영역에서는 파장에 따라 증가하는 반면 이상에서는 감소하는 경향을 보였다. 표면 저항은 1번 코팅했을 때 9Ω/cm2 에서 5번 코팅을 진행하였을 때 0.856Ω/cm2 으로 낮아졌다. 투과도와 유사하게 Ag에 의하여 저항값이 영향을 받는다는 것을 알 수 있었다. 향후 Ag 나노와이어의 Ag 농도 및 다른 방법으로 코팅하여 투명도가 높은 CNT와의 융합을 통하여 원하는 투명 전극을 구현하여 전자소자에 적용할 필요가 있다.

Fabrication of CNT Flexible Field Emitters and Their Field Emission Properties

  • Shin, Dong-Hoon;Song, Yenan;Sun, Yuning;Shin, Ji-Hong;Lee, Cheol-Jin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.384-384
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    • 2011
  • Carbon nanotubes (CNTs) have been studied as an ideal material for field emitters due to the high aspect ratio, excellent electrical property and good mechanical strength. There were many reports on CNT emitters fabricated on rigid substrates, but rare reports about CNT flexible field emitters. Recently, we considered that CNTs can be a good candidate for a flexible field emitter material because of their excellent Young's modulus and elasticity, which could not be achieved with metal tips or semiconducting nanowire tips. In this work, we demonstrated the CNT flexible field emitters fabricated by a simple method and studied the field emission properties of the CNT flexible field emitters under various bending conditions. The flexible field emitters showed stable and uniform emission characteristics. Especially, there is no remarkable change of the field emission properties at the CNT flexible field emitters according to the bending conditions. The CNT flexible field emitters also exhibited a good field emission performance like the low turn-on field and high emission current. Therefore, we suggest that the CNT flexible emitters can be used in many practical applications under different bending conditions.

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Synthesis of Core/Shell Graphene/Semiconductor Nanostructures for Lithium Ion Battery Anodes

  • 신용승;장현식;임재영;임세윤;이종운;이재현;;허근;김태근;황성우;황동목
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.288-288
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    • 2013
  • Lithium-ion battery (LIB) is one of the most important rechargeable battery and portable energy storage for the electric digital devices. In particular, study about the higher energy capacity and longer cycle life is intensively studied because of applications in mobile electronics and electric vehicles. Generally, the LIB's capacity can be improved by replacing anode materials with high capacitance. The graphite, common anode materials, has a good cyclability but shows limitations of capacity (~374 mAh/g). On the contrary, silicon (Si) and germanium(Ge), which is same group elements, are promising candidate for high-performance LIB electrodes because it has a higher theoretical specific capacity. (Si:4200 mAh/g, Ge:1600 mAh/g) However, it is well known that Si volume change by 400% upon full lithiation (lithium insertion into Si), which result in a mechanical pulverization and poor capacity retention during cycling. Therefore, variety of nanostructure group IV elements, including nanoparticles, nanowires, and hollow nanospheres, can be promising solution about the critical issues associated with the large volume change. However, the fundamental research about correlation between the composition and structure for LIB anode is not studied yet. Herein, we successfully synthesized various structure of nanowire such as Si-Ge, Ge-Carbon and Si-graphene core-shell types and analyzed the properties of LIB. Nanowires (NWs) were grown on stainless steel substrates using Au catalyst via VLS (Vapor Liquid Solid) mechanism. And, core-shell NWs were grown by VS (Vapor-Solid) process on the surface of NWs. In order to characterize it, we used FE-SEM, HR-TEM, and Raman spectroscopy. We measured battery property of various nanostructures for checking the capacity and cyclability by cell-tester.

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Copper Oxide Spike Grids for Enhanced Solution Transfer in Cryogenic Electron Microscopy

  • Dukwon Lee;Hansol, Lee;Jinwook Lee;Soung-Hun Roh;Nam-Chul Ha
    • Molecules and Cells
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    • 제46권9호
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    • pp.538-544
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    • 2023
  • The formation of uniform vitreous ice is a crucial step in the preparation of samples for cryogenic electron microscopy (cryo-EM). Despite the rapid technological progress in EM, controlling the thickness of vitreous ice on sample grids with reproducibility remains a major obstacle to obtaining high-quality data in cryo-EM imaging. The commonly employed classical blotting process faces the problem of excess water that cannot be absorbed by the filter paper, resulting in the formation of thick and heterogeneous ice. In this study, we propose a novel approach that combines the recently developed nanowire self-wicking technique with the classical blotting method to effectively control the thickness and homogeneity of vitrified ice. With simple procedures, we generated a copper oxide spike (COS) grid by inducing COSs on commercially available copper grids, which can effectively remove excess water during the blotting procedure without damaging the holey carbon membrane. The ice thickness could be controlled with good reproducibility compared to non-oxidized grids. Incorporated into other EM techniques, our new modification method is an effective option for obtaining high-quality data during cryo-EM imaging.