• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.169-172
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• 2008

We attempted to fabricate carbon nanotube field effect transistor (CNT-FET) using single walled carbon nanotube(SWNT) on the heavily doped Si substrate used as a bottom gate, source and drain electrode were fabricated bye-beam lithography on the 500 nm thick $SiO_2$ gate dielectric layer. We investigated electrical and physical properties of this CNT-FET using Scanning Probe Microscope(SPM) and conventional method based on tungsten probe tip technique. The gate length of CNT-FET was 600 nm and the diameter of identified SWNT was about 4 nm. We could observed gating effect and typical p-MOS property from the obtained $V_G-I_{DS}$ curve. The threshold voltage of CNT-FET is about -4.6V and transconductance is 47 nS. In the physical aspect, we could identified SWNT with phase mode of SPM which detecting phase shift by force gradient between cantilever tip and sample surface.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.1
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• pp.25-29
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• 2012

The properties of carbon nanotube-metal hybrid nanostructures are critically dependent on the structure and chemistry of the metal-carbon nanotube interface. In this study, the interface between nickel and multi-walled carbon nanotubes (CNTs) has been investigated using physical vapor-deposited (sputter-deposited) nickel onto the surface of freestanding carbon nanotube arrays processed by nano-imprint lithography (NIL). These interfaces have been characterized by transmission electron microscopy and 3D atom probe tomography. In the nickel nanocrystals growing on the CNT surface, a metastable hexagonal $Ni_3C$-types phase appears to be stabilized. The structural stability of the nickel-CNT interface is also discussed and related to potential implications for the properties of these nanocomposites.

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.66-69
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• 2017

In this study, the fabrication and electrical properties of aligned single-walled carbon nanotube (SWCNT) networks using a template-based fluidic assembly process are presented. This complementary metal-oxide-semiconductor (CMOS)-friendly process allows the formation of highly aligned lateral nanotube networks on $SiO_2/Si$ substrates, which can be easily integrated onto existing Si-based structures. To measure outstanding electrical properties of organized SWCNT devices, interfacial contact resistance between organized SWCNT devices and Ti/Au electrodes needs to be improved since conventional lithographic cleaning procedures are insufficient for the complete removal of lithographic residues in SWCNT network devices. Using optimized purification steps and controlled developing time, the interfacial contact resistance between SWCNTs and contact electrodes of Ti/Au is reached below 2% of the overall resistance in two-probe SWCNT platform. This structure can withstand current densities ${\sim}10^7A{\cdot}cm^{-2}$, equivalent to copper at similar dimensions. Also failure current density improves with decreasing network width.

• Journal of the Korean Chemical Society
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• v.49 no.6
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• pp.517-520
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.596-596
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• 2013

본 연구에서는 Carbon nanotube 용액을 brush-painting 시스템을 이용하여 유연성 있는 PET 기판 위에 고품위의 플렉시블 투명전극을 제작하였다. CNT 박막의 두께에 따른 특성을 알아보기 위해 brushing 횟수를 증가시켜 UV/Vis Spectrometry, four-point probe 및 Hall measurement를 이용하여 전기적, 광학적특성을 알아보았다. 최적조건인 bilayer의 CNT 박막은 244 Ohm/sq.의 면 저항과 550 nm에서 68％의 투과도를 얻을 수 있었다. CNT 박막의 기계적 응력에 따른 전기적 안정성을 알아보기 위해 bending test를 진행하였다. 10,000번 구부려도 저항의 변화가 거의 없어 이 박막이 플렉시블한 소자에 적합하다는 것을 알았다. 유기태양전지의 적용 가능성을 알아보기 위해 CNT 박막을 유기태양전지의 anode 층으로 적용하여 1.6％ (VOC: 0.566(V), $J_{SC}$: 7.118(mA/$cm^2$), Fill Factor: 40.49(％))의 효율을 얻어 유기태양전지 소자의 적용 가능성을 알았다. 최종적으로 실험에서 성막된 CNT 박막은 기존의 CVD공정과 같은 복잡한 공정 대신에 쉽고 간편하게 고품위의 flexible brush-painting Carbon nanotube (CNT) 투명전극을 제작 하여 플렉시블한 유기태양전지 소자의 가능성을 알아보았다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.169-170
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1228-1231
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• 2005

This paper reports about the development of scanning probe microscopy (SPM) tip with multi-walled carbon nanotube (MWNT). For making a carbon nanotube (CNT) modified tips, AC electric field which causes the dielectrophoresis was used for alignment and deposition of CNTs to the metal coated SPM tip. By dropping the MWNT solution and applying an electric field between an SPM tip and an electrode, MWNTs which were dispersed into a diluted solution were directly assembled onto the apex of the SPM tips due to the attraction by the dielectrophoretic force. In this paper, we investigate experimental conditions about the alignment of the CNT to tip axis according to the change of the angle between a tip and an electrode. Experimental results are presented, and then fabricated CNT tips are showed and measurement results for 15nm gold particles are compared with that of the conventional silicon tip.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.463-464
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• 2006

This paper present experimental results by non-contact mode Atomic Force Microscopy using high aspect ratio tips (HAR-T). We fabricated the carbon nanotube tip based on dielectrophoresis and the carbon nano probe by focused ion beam after dielectrophoretic assembling. In this paper, we measure AAO sample and trench structure to estimate HAR-T's performance and compared with conventional Si tip. We confirmed that results of HAR-T's performance in non contact mode was very superior than conventional tip.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.183-183
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.417-417
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• 2009

Although a transparent conductive film (TCF) belongs to essential supporting materials for many device applications such as touch screens, flat panel displays, and sensors, a conventional transparent conductive material, indium-tin oxide (ITO), suffers from considerable drawback because the price of indium has soared since 2001. Despite a recent falloff, a demand of ITO is expected to increase sharply in the future due to the trend of flat panel display technologies toward flexible, paper-like features. There have been recently extensive studies to replace ITO with new materials, in particular, carbon nanotubes (CNTs) since CNTs possess excellent properties such as flexibility, electrical conductivity, optical transparency, mechanical strength, etc., which are prerequisite to TCFs. This study fabricated TCFs with single-walled carbon nanotubes (SWCNTs) produced by arc discharge. The SWCNTs were dispersed in water with a surfactant of sodium dodecyl benzene sulfonate (NaDDBS) under sonication. Carbon black and fullerene nanoparticles were added to the SWCNT-dispersed solution to enhance contact resistance between CNTs. TCFs were manufactured by a filtration and transfer method. TCFs added with carbon black and fullerene nanoparticles were characterized by scanning electron microscopy (SEM), UV-vis spectroscopy (optical transmittance), and four-point probe measurement (sheet resistance).