• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.201-201
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• 2012

Using materials with high thermal conductivity is a matter of great concern in the field of thermal management. In this study, we present our experimental results on an important physical property of carbon nanotube (CNT) films, two-dimensional thermal conductivity obtained by using an optical method based on Raman spectroscopy. We prepared four kinds of CNT films to investigate the effect of CNT type on heat spreading performance of films. This first comparative study using the optical method shows that the arc-discharge single-walled carbon nanotubes yield the best heat spreading film. And we observed thermal conductivity values of CNT films with various transmittances and found that the Raman method works as long as the sample is a transparent film. This study provides useful information on characterization of thermal conduction in transparent CNT films and could be an important step toward high-performance carbon-based heat spreading films.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.939-942
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• 2011

Conductive carbon films were prepared at room temperature by unbalanced magnetron sputtering (UBMS) on silicon substrates using argon (Ar) gas, and the effects of post-annealing temperature on the structural, tribological, and electrical properties of carbon films were investigated. Films were annealed at temperatures ranging from $400^{\circ}C$ to $700^{\circ}C$ in increments of $100^{\circ}C$ using a rapid thermal annealing method by vacuum furnace in vacuum ambient. The increase of annealing temperature contributed to the increase of the ordering and formation of aromatic rings in the carbon film. Consequently, with increasing annealing temperature the tribological properties of sputtered carbon films are deteriorated while the resistivity of carbon films significantly decreased from $4.5{\times}10^{-3}$ to $1.0{\times}10^{-6}\;{\Omega}-cm$ and carrier concentration as well as mobility increased, respectively. This behavior can be explained by the increase of sp2 bonding fraction and ordering $sp^2$ clusters in the carbon networks caused by increasing annealing temperature.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.498-504
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• 1996

The synthesis of carbon nitride thin films with high nitrgen concentration was accomplished by reactive supttering at relatively high working pressure. In conventional reactive sputter-deposition of carbon nitride films, working pressure was 0.3-5Pa and the ratio of nitrogen to carbon(N/C ratio) in the films was less than 0.5. In this study, amorphous carbon nitride films with the N/C ratio $\tickapprox$ 1.0 were prepared on Si(100). substrates at higher pressure, 20-60 Pa. Structural analyses with Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy revealed that the films prepared consisted of triazine-like plain network.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1663-1664
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• 2006

Carbon films was grown on Si substrates using the method of electrolysis for methanol liquid. Deposition parameters for the growth of the carbon films were current density for the electrolysis, methanol liquid temperature and electrode spacing between anode and cathode. We examined electrical resistance and the surface morphology of carbon films formed under various conditions specified by deposition parameters. It was clarified that the high electrical resistance carbon films with smooth surface morphology are grown when a distance between the electrodes was relatively wider. We found that the electrical resistance in the films was independent of both current density and methanol liquid temperature for electrolysis. The temperature dependence of the electrical resistance in the low resistance carbon films was different from one obtained in graphite.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.163-164
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• 2002

This paper describes a new carbon film that afford superlubricity (i.e, friction coefficients of 0.001- 0.005) and superlow wear rates (i.e., $10^{-11}-10^{-10}mm^3/N.m$) to sliding metallic and ceramic surfaces, when tested in inert test environments. The wear life of these films are more than 1000 km even under very high contact pressures (i.e., 1-3 GPa) and at a wide range of sliding velocities (i.e., 0.1 to 2 m/s). They are produced in a plasma enhanced chemical vapor deposition system at room temperature using highly hydrogenated gas discharge plasmas. Extensive research has shown that films grown in highly hydrogenated gas discharge plasmas (i.e., hydrogen-to-carbon ratio of 6 and above) provide superlow friction and wear coefficients. In full paper, specific conditions under which superlubricity can be achieved in carbon films will be discussed.and a mechanistic model will be proposed to explain the superlubricity of new carbon films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.641-646
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) substrate using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in the presence of a N$_2$ reactive gas. We calculated dielectric constant, $\varepsilon$$\_$s/, with a capacitance Schering bridge method. We investigated the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were increased drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and C=N bonds. The carbon nitride thin films were observed crystalline phase confirmed by x-ray diffraction data.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.147-150
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• 2007

Electro-deposition of carbon film on silicon substrate in methanol solution was carried out with various current density, solution temperature and electrode spacing between anode and cathode. The carbon films with smooth surface morphology and high electrical resistance were formed when the distance between electrode was relatively wider. The electrical resistance of the carbon films were independent of both current density and solution temperature.

• Journal of Ceramic Processing Research
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• v.19 no.6
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• pp.479-482
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• 2018

Polystyrene superstructure films show faint rainbow color, and this low color saturation limits its wide application. In this paper, polystyrene superstructure films with single bright blue color were prepared by vertical deposition self-assembly method using polystyrene microspheres with average diameter of $310{\pm}10nm$ as raw material. Polystyrene superstructure films were modified by adding nano-carbon powder, and effect of the amount of nano-carbon powde on color performance was studied. The results showed that without addition of nano-carbon powder, the superstructure films showed a faint rainbow color, while with addition of nano-carbon power, the superstructure films exhibited a single bright blue under the same natural light source. Changing the amount of nano-carbon powder addition could adjust color saturation of the film. With increasing the amount of nano-carbon powder addition from 0.008 wt% to 0.01 wt%, color saturation of the superstructure film increased gradually. Further increasing the amount of nano-carbon powder addition to 0.011wt%, color saturation of the superstructure film didn't increase anymore and tended to get dark.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.551-557
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• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with the without the presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor plume plasma expending into th ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The nitrogen content of the films was found to increase drastically with an increase of nitrogen pressure. The surface morphology of the films was studied using a scanning electron microscopy. Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtained films.