• 한국전기전자재료학회논문지
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• 제29권7호
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• pp.394-399
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• 2016

The silicon dioxide ($SiO_2$) was deposited using various gas as oxygen and nitrous oxide ($N_2O$) in nowadays. In order to improve electrical characteristics and the interface state density ($D_{it}$) in low temperature, It was deposited with carbon dioxide ($CO_2$) and silane ($SiH_4$) gas by inductively coupled plasma chemical vapor deposition (ICP-CVD). Each $D_{it}$ of $SiO_2$ using $CO_2$ and $N_2O$ gas was $1.30{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$ and $3.31{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$. It showed $SiO_2$ using $CO_2$ gas was about 2.55 times better than $N_2O$ gas. After 10 years when the thin film was applied to metal/insulator/semiconductor(MIS)-nonvolatile memory(NVM), MIS NVM using $SiO_2$($CO_2$) on tunneling layer had window memory of 2.16 V with 60% retention at bias voltage from +16 V to -19 V. However, MIS NVM applied $SiO_2$($N_2O$) to tunneling layer had 2.48 V with 61% retention at bias voltage from +20 V to -24 V. The results show $SiO_2$ using $CO_2$ decrease the $D_{it}$ and it improves the operating voltage.

• 한국재료학회지
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• 제20권12호
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• pp.686-690
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• 2010

$TiO_2$ nanowires were self-catalytically synthesized on bare Si(100) substrates using metallorganic chemical vapor deposition. The nanowire formation was critically affected by growth temperature. The $TiO_2$ nanowires were grown at a high density on Si(100) at $510^{\circ}C$, which is near the complete decomposition temperature ($527^{\circ}C$) of the Ti precursor $(Ti(O-iPr)_2(dpm)_2)$. At $470^{\circ}C$, only very thin (< $0.1{\mu}m$) $TiO_2$ film was formed because the Ti precursor was not completely decomposed. When growth temperature was increased to $550^{\circ}C$ and $670^{\circ}C$, the nanowire formation was also significantly suppressed. A vaporsolid (V-S) growth mechanism excluding a liquid phase appeared to control the nanowire formation. The $TiO_2$ nanowire growth seemed to be activated by carbon, which was supplied by decomposition of the Ti precursor. The $TiO_2$ nanowire density was increased with increased growth pressure in the range of 1.2 to 10 torr. In addition, the nanowire formation was enhanced by using Au and Pt catalysts, which seem to act as catalysts for oxidation. The nanowires consisted of well-aligned ~20-30 nm size rutile and anatase nanocrystallines. This MOCVD synthesis technique is unique and efficient to self-catalytically grow $TiO_2$ nanowires, which hold significant promise for various photocatalysis and solar cell applications.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 춘계학술대회
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• pp.531-533
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• 2013

본 논문에서 연구하고자 하는 IPMC(Ionic exchange Polymer Metal Composite)는 술폰산 이온기와 플루오르화 탄소의 결합으로 이루어진 Nafion 필름을 사용한 소재로 전기 활성 고분자(Electro Active Polymer) 특성과 물의 유무 및 양이온에 크게 영향을 받는 특성을 지닌다. 즉, 전기 에너지를 기계적 에너지로 활용 하거나, 기계 에너지를 전기 에너지로 활용 할 수 있으며, 물과 물속의 양이온에 따라 그 특성도 크게 달라진다. 이러한 IPMC의 전기적 특성을 연구하기 위하여 모의실험 장치를 구성하였다. 이 모의 실험 장치에는 MCU 와 Stepper Motor를 사용 하여 해류의 기계적 움직임을 구현 하도록 하여 움직임에 따른 전기적 특성 분석을 하도록 설계 하였다. 본 연구에서는 IPMC와 모의실험 장치를 구성 하여 해류 에너지의 효율 적인 사용을 위하여 IPMC의 면적, 주파수, 염분의 농도, Bending 각도에 따른 전기적 분석 연구 방법을 통해 IPMC의 효율적인 사용 방법을 제안하고자 한다.

• 대한화학회지
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• 제45권5호
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• pp.429-435
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• 2001

단량체인 N,N'-bis(2-pyrrol-1-yl-propyl)-4,4'-bipyridine(bpb)을 유리탄소전극 상에 전기화학적으로 중합한 고분자 피막전극을 erichrome black T(EBT) 와 glutathione(GSSG)의 1:1 용액으로 수식하여 GC/poly-bpb, EBT, GSSG형의 전극을 제작하고 이로써 Zn(II)을 포집한 전극을 제작하였다. 수식된 피막 내에서 이온의 확산계수는 아연이온이 포집되기 전후에 각각 2.43${\times}10^{-15}$과 9.14${\times}10^{-15}cm^2s^{-1}$으로 피막내의 전기화학적 활성자리에서 이탈이 거의 일어나지 않는 안정한 전극이다. 중합된 bpb의 양이 2.83${\times}10^4gmol^{-1}$에 대하여 1.17${\times}10^4gmol^{-1}$의 아연이온이 포집되었다. 이들 중에 산화-환원 과정에서 회합/해리에 관여하는 이온은 포집된 180개의 이온들 중에서 81.7%였다. 이는 EBT 만으로 수식된 전극에서 보다 3배정도 큰 값이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.465-465
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• 2011

In recent years, electrochemical supercapacitors have attracted much attention due to their high power density, long life cycles, and high efficiency. Some supercapacitors using CNTs have been reported, but there are several issues to be resolved for further development of CNT based supercapacitors. One issue is time consuming procedures to prepare CNT films, which may provide poor control of CNT uniformity over the large area of the substrates. Another is new electrolytes replacing the conventional liquid electrolytes in supercapacitors. In this work, We have successfully demonstrated that spray deposition method of multiwalled CNT films using gel electroytes could be promising for CNT-based supercapacitors on ITO substrates. Specific capacitances using gel electrolyte reached up to 1.5 F/g and 9 mF/$cm^2$, and internal resistance was 28 ${\Omega}$. Specific capacitances and internal resistance of supercapacitors with gel electrolyte were better than or comparable to those with liquid electrolytes($KNO_3$, $Na_2SO_4$), indicating that gel electrolytes could replace liquid counterparts in CNT-based supercapacitors. Combined with gel electrolyte, spray deposition method could provide low cost and easily scalable process for high performance supercapacitors using CNT films on ITO for applications in display devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.562-562
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• 2012

Recently, graphene and graphene-based materials such as graphene oxide (GO) or reduced graphene oxide (R-GO) draws a great attention for electronic devices due to their structures of one atomic layer of carbon hexagon that have excellent mechanical, electrical, thermal, optical properties and very high specific surface area that can be high potential for chemical functionalization. R-GO is a promising candidate because it can be prepared with low-cost from solution process by chemical oxidation and exfoliation using strong acids and oxidants to produce graphene oxide (GO) and its subsequent reduction. R-GO has been used as semiconductor or conductor materials as well as sensing layer for bio-molecules or ions. In this work, reduced graphene oxide field-effect transistor (R-GO FET) has been fabricated with ITO extended gate structure that has sensing area on ITO extended gate part. R-GO FET device was encapsulated by tetratetracontane (TTC) layer using thermal evaporation. A thermal annealing process was carried out at $140^{\circ}C$ for 4 hours in the same thermal vacuum chamber to remove defects in R-GO film before deposition of TTC at $50^{\circ}C$ with thickness of 200 nm. As a result of this process, R-GO FET device has a very high stability and durability for months to serve as a transducer for sensing applications.

• 열처리공학회지
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• 제11권4호
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• pp.295-304
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• 1998

The effects of retained austenite and carbon content in the retained austenite on the tensile strength-elongation balance and spot weldability of TRIP high strength steel sheet have been investigated. The retained austenite of granular type increased with increasing intercritical annealing and austempering temperature, and film type was increased with the increase of austempering time. The volume fraction of retained austenite increased with decreasing intereritical annealing temperature, and the maximum value was obtained at austempering temperature of $400^{\circ}C$. The values of tensile strength-elongation balance increased with decreasing intercritical annealing temperature and maximum value was obtained at austempering temperature of $400^{\circ}C$. The maximum value of tensile strength-elongation balance was obtained at a retained austenite content of about 12%. Tensile shear strength of the specimens with retained austenite was higher than that of the normalizing specimens. With increasing welding current and time, the tensile shear strengh and nugget diameter increased, while nugget thickness showed the peak value and then decreased. The optimum range of welding condition at the given welding pressure of 350kgf was 7~11kA and 10~15 cycles.

• 열처리공학회지
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• 제24권5호
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• pp.243-250
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• 2011

When alloys are vacuum-deposited on cooled substrates, super-rapidly cooled alloy films in the unequilibrium state can be obtained. As an application of this method, Ag-Cu, Ag-Ni and Ag-C alloys were successfully produced, and their mechanical properties with tempering temperature were investigated. The following results were obtained : (1) In case of Ag-Cu alloys, the solid solution was hardened by tempering at $150^{\circ}C$. The hardening is considered to occur when the solid solution begins to decompose into ${\alpha}$ and ${\beta}$ phases. The Knoop hardness number of a 40 at.%Ag-Cu alloy film deposited on a cooled glass substrate was 390 $kg/mm^2$. The as-deposited films were generally very hard but fractured under stresses below their elastic limits. (2) In case of Ag-Ni and Ag-C alloys, after the tempering of 4 at.%Ni-Ag alloy at $400^{\circ}C$ and of 1 and 2 at.%C-Ag alloys at $200^{\circ}C$, they were hardened by the precipitation of fine nickel and carbon particles. The linear relationship between proof stress vs. $(grain\;diameter)^{-l/2}$ for bulk silver polycrystals can be applied to vacuum-deposited films up to about 0.1 ${\mu}m$ grain diameter, but the proof stress of ultra-fine grained silver with grain diameters of less than 0.1 ${\mu}m$ was smaller than the value expected from the Petch's relation.

• 한국표면공학회지
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• 제36권5호
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• pp.357-363
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• 2003

The aim of this work is the synthesis of a-C:H films from methane gas using surface spark discharge at the atmospheric pressure. Properties of these films have been investigated as functions of energy W delivered per a methane molecule in the discharge. The method enables the coatings to be deposited with high growth rates (up to $100 \mu\textrm{m}$/hour) onto large-area substrates. It is shown that the films consist of spherical granules with diameter of 20∼50 nm formed in the spark channel and then deposited onto the substrate. The best film characteristics such as minimum hydrogen-to-carbon atoms ratio H/C=0.69, maximum hardness $H_{v}$ =3 ㎬, the most dense packing of the granules and highest scratch resistance has been obtained under the condition of highest energy W of 40 eV. The deposited a-C:H coatings were found to be more soft and hydrogenated compared to the diamond-like hydrogenated (a-C:H) films which obtained by traditional plasmaenhanced chemical vapor deposition methods at low pressure (＜10 Torr). Nevertheless, these coatings can be potentially used for scratch protection of soft plastic materials since they are of an order harder than plastics but still transparent (the absorption coefficient is about $10^4$∼$10^{5}$ $m^{-1}$ At the same time the proposed method for fast deposition of a-C:H films makes this process less expensive compared to the conventional techniques. This advantage can widen the application field of. these films substantially.y.

• Macromolecular Research
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• 제14권5호
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• pp.552-558
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• 2006

Biodegradable nanofibrous poly(L-lactic acid) (PLLA) scaffold was prepared by an electrospinning process for use in tissue regeneration. The nanofiber scaffold was treated with oxygen plasma and then simultaneously in situ grafted with hydrophilic acrylic acid (AA) to obtain PLLA-g-PAA. The fiber diameter, pore size, and porosity of the electrospun nanofibrous PLLA scaffold were estimated as $250\sim750nm,\;\sim30{\mu}m$, and 95%, respectively. The ultimate tensile strength was 1.7 MPa and the percent elongation at break was 120%. Although the physical and mechanical properties of the PLLA-g-PAA scaffold were comparable to those of the PLLA control, a significantly lower contact angle and significantly higher ratio of oxygen to carbon were notable on the PLLA-g-PAA surface. After the fibroblasts were cultured for up to 6 days, cell adhesion and proliferation were much improved on the nanofibrous PLLA-g-PAA scaffold than on either PLLA film or unmodified nanofibrous PLLA scaffold. The present work demonstrated that the applications of plasma treatment and hydrophilic AA grafting were effective to modify the surface of electrospun nanofibrous polymer scaffolds and that the altered surface characteristics significantly improved cell adhesion and proliferation.