• 열처리공학회지
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• 제20권2호
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• pp.65-71
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• 2007

Microstructural changes and hardness variations in STS 304 steel have been investigated during the processes of carbide dispersion (CD) carburization; carburization, austenitization, subzero treatment and tempering. The carbon content of the surface layer increased up to maximum 4.0% after carburization, and the content was homogenized with the value of 2.3% to the $95{\mu}m$ from the surface after austenitization. The carbide appeared during CD carburization process was $Cr_7C_3$ type, which was composed network carbides along the austenite grain boundaries, square type carbides in the interior of the grain and fine nano-sized carbides. The fine nano-sized carbides precipitated at the austenitization stage and possibly subzero treatment stage were coarsened after tempering at $200^{\circ}C$, resulting the hardness decrease. The tempered steel without subzero treatment increased hardness with increasing time due to the continuous precipitation of fine carbides during tempering. The nano-sized carbide appeared square type morphology.

• 한국재료학회지
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• 제16권4호
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• pp.241-247
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• 2006

Structural studies have been performed on precipitation hardening discovered in $L1_2-ordered\;Ni_3(Al,Cr)$ containing 0.2 to 3.0 mol% of carbon using transmission electron microscopy (TEM). Fine octahedral precipitates of $M_{23}C_6$ appeared in the matrix by aging at temperatures around 973 K after solution treatment at 1423 K. TEM examination revealed that the $M_{23}C_6$ phase and the matrix lattices have a cube-cube orientation relationship and keep partial atomic matching at the {111} interface. After prolonged aging or by aging at higher temperatures, the $M_{23}C_6$ precipitates then adopt a rod-like morphology elongated parallel to the <100> directions. Deformation at temperature below 973 K, typical Orowan loops were observed surrounding the $M_{23}C_6$ particles. At higher deformation temperatures, the Orowan loops disappeared and the morphology of dislocations at the particle-matrix interfaces suggested the existence of attractive interaction between dislocations and particles. The change of the interaction modes between dislocation and particles with increasing deformation temperature can be considered as a result of strain relaxation at the interface between matrix and particles.

• 한국정밀공학회지
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• 제20권9호
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• pp.55-62
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• 2003

This paper investigates the micro-cutting of cemented carbides using PCD (polycrystalline diamond) and PCBN (polycrystalline cubic boron nitride) cutting tools are performed with SEM direct observation method. The purpose of this study is to make clear the cutting mechanism of cemented carbides and the fracture of WC particles at the plastic deformation zone in orthogonal micro-cutting. And also to achieve systematic understanding, the effect of machining parameter on chip formation and machined surface was studied, including cutting speed, depth of cut and various tool rake angle. Summary of the results are shown below. (1) Three type of chip formation process have been proposed by the results of the direct observation in orthogonal micro-cutting of cemented carbide materials. (2) From the whole observation of chip formation, primary WC particles are crushed and/or fine grained in the shearing deformation zone. A part of them are observed to collide directly with a cutting edge of tool by following the micro-cutting. (3) Surface finish, surface morphology and surface integrity is good to obtain by cutting with PCD cutting tool compared with PCBN. (4) The machined surface has the best quality near the low cutting speed of 10${\mu}m$/sec with a cutting depth of 10 ${\mu}m$ using 0$^\circ$ rake angle and 3$^\circ$ flank angle in this condition, but it was found that excessively low speed, for example the extent of 1 ${\mu}m$/sec, is not good enough to select for various reason.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.433-433
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• 2011

Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.

• 한국세라믹학회지
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• 제53권6호
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• pp.707-711
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• 2016

A small diameter of SiC fiber mat can produce much higher heat under microwave irradiation than the other types of SiC materials. Fabrication of high strength SiC fiber consists of iodine vapor curing on polycarbosilane precursor and heat treatment process. The curing stage of polycarbosilane fiber was maintained at $150-200^{\circ}C$ in a vacuum condition under the iodine vapor to fabricate a high thermal radiation SiC fiber. The structure and morphology of the fibers were characterized by Fourier transform infrared (FTIR) spectroscopy, thermogravimetric analysis (TG) and scanning electron microscopy (SEM). In this study, the thermal properties of SiC fiber mats under microwave have been analyzed with an IR thermal camera and its image analyzer. The prepared SiC fiber mats radiated high temperature with extremely high heating rate up to $1100^{\circ}C$ in 30 seconds. The fabricated SiC fiber mats were not oxidized after the heat radiation process under the microwave irradiation.

• 한국전기전자재료학회논문지
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• 제24권3호
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• pp.229-233
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• 2011

Diamond thin films were deposited on pretreated Co cemented tungsten carbide (WC-6%Co) inserts as substrate by microwave plasma chemical vapor deposition (MPCVD) system, equipped with a 915MHz, 30kW generator for generating a large-size plasma. The substrates were pretreated with two solutions Murakami solution $[KOH:K_3Fe(CN)_6:H_2O]$ and nitric solution $[HNO_3:H_2O]$ to etch, WC and Co at cemented carbide substrates, respectively. The deposition experiments were performed at an input power of 10 kW and in a total pressure of 100 torr. The influence of various $CH_4$ contents on the crystallinity and morphology of the diamond films deposited in MPCVD was investigated using scanning electron microscopy (SEM) and Raman spectroscopy. The diamond film synthesized by the $CH_4$ plasma shows a triangle-faceted (111) diamond. As $CH_4$ contents was increased, the thickness of diamond films increased and the faceted planes disappeared. Finally, Faceted diamond changed into nano-crystalline diamond with random crystallinity.

• Transactions on Electrical and Electronic Materials
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• 제1권4호
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• pp.1-6
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• 2000

The mechanical strength of silicon carbide dose nor permit the use of diffusion as a means to achieve selective doping as required by most electronic devices. While epitaxial layers may be doped during growth, ion implantation is needed to define such regions as drain and source wells, junction isolation regions, and so on. Ion activation without an annealing cap results in serious crystal damage as these activation processes must be carried out at temperatures on the order of 1600$^{\circ}C$. Ion implanted silicon carbide that is annealed in either a vacuum or argon environment usually results in a surface morphology that is highly irregular due to the out diffusion of Si atoms. We have developed and report a successful process of using silicon overpressure, provided by silane in a CAD reactor during the anneal, to prevent the destruction of the silicon carbide surface, This process has proved to be robust and has resulted in ion activation at a annealing temperature of 1600$^{\circ}C$ without degradation of the crystal surface as determined by AFM and RBS. In addition XPS was used to look at the surface and near surface chemical states for annealing temperatures of up to 1700$^{\circ}C$. The surface and near surface regions to approximately 6 nm in depth was observed to contain no free silicon or other impurities thus indicating that the process developed results in an atomically clean SiC surface and near surface region within the detection limits of the instrument(${\pm}$1 at %).

• Journal of Electrochemical Science and Technology
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• 제14권1호
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• pp.75-84
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• 2023

The accumulation of spent carbide (YG8), not only pollutes the environment but also causes waste of tungsten, cobalt and other rare metal resources. To better address this issue, we proposed a combined electrochemical separation process of low-temperature aqueous solution and high-temperature molten salt for tungsten and cobalt. H₂WO₄ was obtained from spent carbide in an aqueous solution, and we calcined it to obtain WO₃, which was used as a raw material to obtain tungsten by using molten salt electrodeposition. The influence of the current efficiency and the electrochemical behavior of the discharge precipitation of W(VI) were also studied. The calcination results showed that the morphology of WO₃ was regular and there were no other impurities. The maximum current efficiency of 82.91% was achieved in a series of electrodeposition experiments. According to XRD and SEM analysis, the recovered product was high purity tungsten, which belongs to the simple cubic crystal system. In the W(VI) reduction mechanism experiments, the electrochemical process of W(VI) in NaCl-Na₂WO₄-WO₃ molten salt was investigated using linear scanning voltammetry (LSV) and chronoamperometry in a three-electrode system. The LSV showed that W(VI) was reduced at the cathode in two steps and the electrode reaction was controlled by diffusion. The fitting results of chronoamperometry showed that the nucleation mechanism of W(VI) was an instantaneous nucleation mode, and the diffusion coefficient was 7.379×10^-10 cm²·s^-1.

• Composites Research
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• 제30권2호
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• pp.102-107
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• 2017

프리세라믹폴리머는 기존의 세라믹 공정으로는 얻을 수 없는 다양하고 복잡한 구조의 세라믹 소재를 구현할 수 있다. 대표적인 프리세라믹폴리머인 폴리카보실란은 분자구조 제어를 통해 실리콘과 탄소의 함량비 조절이나 분자구조의 선형성을 향상시키고 분자량 및 분자량분포 제어를 통해 탄화규소섬유를 포함한 다앙한 형상/미세구조의 탄화규소 세라믹을 제조할 수 있다. 본 논문에서는 폴리카보실란의 합성 및 분자구조제어기술과 이를 용융방사 및 안정화, 열처리를 거쳐 제조되는 탄화규소섬유섬유, 그리고 PIP 공정으로 만들어지는 세라믹섬유복합소재 기술에 대하여 논하였다. 더불어 나노다공구조를 갖는 탄화규소 중공사와 같이 폴리카보실란을 이용해 구현할 수 있는 복잡구조의 탄화규소 소재 개발 예를 소개하였다.

• 한국정밀공학회지
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• 제11권6호
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• pp.185-199
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• 1994

This study has been performed to present a new automatic tool wear measurement by digital image processing. The purpose of this paper is to develop an automatic tool wear measuring system based on the image processing which can be applied to the quasi-real time measurement of the characteristics of insert tip in turning. Tool wear monitoring is one of the key-problems, for the development of control systems of modern unmanned factory which are not completely solved now. In oredr words at present complete qualitative and quantitative information on tool wear morphology is required, at least on the following aspects : flank wear, its dimensions and distribution on the maximum and mean values on VB pqrqmeter in the various zones of the wearland. crater wear, its main dimensions and values of KT parameters. This research has been performed to this technique made possible by designing a proper lighting system to the worn tool with following features : The flank wear is measured by observing the active cutting part from a proper direction and by lighting the wearland by a diffuser optic system. The crater wear is visualized by lighting the tool by a He-Ne gas laser system developed in this study. By means of this system it is research to evaluate classical parameters of tool wear and to have complete information about tool wear morphology.