• Electrical & Electronic Materials
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• v.7 no.4
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• pp.331-340
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• 1994

Polysilicon on insulator has been recrystallized by zone melting recrystallization method with graphite strip heaters. Experiments are performed with non-seed SOI structures. When the capping layer thickness of Si$\_$3/N$\_$4//SiO$\_$2/ is 2.0.mu.m, grain boundaries are about 120.mu.m spacing and protrusions reduced. After the seed SOI films are annealed at 1100.deg. C in NH$\_$3/ ambient for 3 hours, the recrystallized silicon surface has convex shape. After ZMR process, the tensile stress is 2.49*10$\^$9/dyn/cm$\^$2/ and 3.74*10$\^$9/dyn/cm$\^$2/ in the seed edge and seed center regions. The phenomenon of convex shape and tensile stress difference are completely eliminated by using the PSG/SiO$\_$2/ capping layer. The characterization of SOI films are showed that the SOI films are improved in wetting properties. N channel SOI MOSFET has been fabricated to investigate the electrical characteristics of the recrystallized SOI films. In the 0.7.mu.m thickness SOI MOSFET, kink effects due to the floating substrate occur and the electron mobility was calculated from the measured g$\_$m/ characteristics, which is about 589cm$\^$2//V.s. The recrystallized SOI films are shown to be a good single crystal silicon.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.280-285
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• 2003

The influence of silicon surface damage on nickel-silicide (NiSi) has been characterized and H$_2$ anneal and TiN rapping has been applied to suppress the electrical, morphological deterioration phenomenon incurred by the surface damage. The substrate surface is intentionally damaged using Ar IBE (Ion beam etching) which can Precisely control the etch depth. The sheet resistance of NiSi increased about 18% by the surface damage, which is proven to be mainly due to the reduced silicide thickness. It is shown that simultaneous application of H: anneal and TiN capping layer is highly effective in suppressing the surface damage effect.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.39-39
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• 2008

기존의 Flip-chip형 발광소자에에서의 Ag반사층 상에 NiZn 합금을 적용한 구조를 통하여 기존보다 향상된 열적 안정성과 전기적, 광학적 물성을 얻고 이에 따른 오믹 메커니즘의 규명을 실시하였다.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.150-154
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• 2000

We investigated the quantum well intermixing (QWI) of a compressively strained InGaAs/InGaAsP multiple quantum well (MQW) by using impurity free vacancy diffusion technique. The samples with InGaAs/$SiO_2$ capping layer showed a higher degree of intermixing compared to that of InP/$SiO_2$ capping layer after rapid thermal annealing (RTA). Band-gap shift difference as large as 123 meV (195 nm) was observed between samples capped with InGaAs/$SiO_2$ and with InP/$SiO_2$ layer at RTA temperature of $700^{\circ}C$. Using the InGaAs/$SiO_2$ cap layer, the band-gap wavelength of MQW was changed by the intermixing from 1.55 $\mu\textrm{m}$ band to 1.3 $\mu\textrm{m}$ band with a wavelength shift of a 237 nm. The transform from MQW structure to homogenous alloy was observed above the RTA temperature of $700^{\circ}C$.

• Journal of the Korean Electrochemical Society
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• v.10 no.2
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• pp.94-103
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• 2007

The transition of interconnection metal from aluminum alloy to copper has been introduced to meet the requirements of high speed, ultra-large scale integration, and high reliability of the semiconductor device. Since copper, which has low electrical resistivity and high resistance to degradation, has different electrical and material characteristics compared to aluminum alloy, new related materials and processes are needed to successfully fabricate the copper interconnection. In this review, some important factors of multilevel copper damascene process have been surveyed such as diffusion barrier, seed layer, organic additives for bottom-up electro/electroless deposition, chemical mechanical polishing, and capping layer to introduce the related issues and recent research trends on them.

• Journal of Korean Society of Environmental Engineers
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• v.28 no.11
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• pp.1180-1185
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• 2006

Lab-scale batch experiments using several 25-L transparent acrylic reactors were conducted to develop optimum capping materials that can reduce phosphorus released from polluted sediments. The sediment used in the experiment was very fine clay(8.8 $\Phi$ in mean grain size), and organic carbon($C_{org}$) content was as high as 2%. Four kinds of batches with different capping materials Brucite($Mg(OH)_2$), Sea sand($SiO_2$), Granular-gypsum($CaSO_4{\cdot}2H_2O$), Double layer(brucite+sand), and one control batch were operated for 30 days. Phosphorus fluxes released from bottom sediments in the control batch were estimated to be 14.6 $mg{\cdot}m^{-2}{\cdot}d^{-1}$, while 9.5 $mg{\cdot}m^{-2}{\cdot}d^{-1}$, 5.2 $mg{\cdot}m^{-2}{\cdot}d^{-1}$, 4.2 $mg{\cdot}m^{-2}{\cdot}d^{-1}$, and 3.1 $mg{\cdot}m^{-2}{\cdot}d^{-1}$ in the batch capped with Sea sand, Granular-gypsum, Double layer, and Brucite, respectively. The results obtained from lab-scale batch experiments show that there were 70% reduction of phosphorus for some materials such as Brucite, Double layer(brucite+sand), and whereas sea sand only about 35%. The pH range of surface sediment to which Brucite was applied showed about $8.0{\sim}9.5$ in the weak alkaline state. This effect can prevent liberation of $H_2O$. The addition of gypsum into the sediment can reduce the progress of methanogenesis because of fast early diagenesis and sufficient supply of $SO_4^{2-}$ to the sediments, stimulate the SRB highly. Therefore, the application of Brucite and Gypsum can reduce phosphorus release from the sediment as a result of formation of $Mg_5(OH)(PO_4)_3$, pyrite($FeS_x$), and apatite-mineral.

• Journal of Korean Society of Environmental Engineers
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• v.28 no.5
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• pp.563-572
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• 2006

In order to propose optimum in-situ treatment for reducing phosphorous release from sediment of stationary lakes, a series of column tests were performed. The sediment used in experiment was very fine clay with a mean grain site $7.7{\phi}$ and high $C_{org}$ contents(2.4%). Phosphorous releases were evaluated in two ways : in lake water(with microbial effect) and in distilled water(without microbial effect). As in-situ capping material, sand and loess were used while Fe-Gypsum and $SiO_2$-Gypsum were used for in-situ chemical treatment. In case of lake water considering the effect of microorganism, phosphorous concentration rapidly decreased in the early stage of experiment but it was gradually increased after 10 days. Flux of phosphorous release for control was $3.0mg/m^2{\cdot}d$. Whereas, those for sand layer capping(5 cm) and loess layer capping(5 cm) were $2.5mg/m^2{\cdot}d\;and\;1.8mg/m^2{\cdot}d$, respectively because the latter two were not consolidated sufficiently. For Fe-gypsum and $SiO_2$-gypsum the fluxes were $1.4mg/m^2{\cdot}d$ which meant that reduction efficiency of phosphorous release was more than 40% higher than that of control. The case capping with complex layer was $1.0mg/m^2{\cdot}d$, which showed high reduction efficiency over 60%. The addition of gypsum($CaSO_4{\cdot}2H_2O$) into the sediment reduced release of Phosphorus from the sediments. Gypsum acted as a slow-releasing source of sulphate in sediment, which enhanced the activity of SRB(sulfate reducing bacteria) and improved the overall mineralization rate of organic matter.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.724-726
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• 2007

We have developed the synthesis method to reduce the surface oxide layer in Cu nanoparticle, which is based on controlling the molecular weight of capping polymer. In addition, we demonstrated how the variation of oxide layer thickness influences the resistivity of conductive Cu film.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.197-200
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• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.146-147
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• 2012

InP 기판위에 자발성장법으로 성장된 InAs 양자점은 $1.55{\mu}m$ 영역에서 발진하는 양자점 반도체 레이저 다이오드 및 광 증폭기를 제작할 수 있기 때문에 많은 관심을 받고 있다. 광통신 대역의 $1.55{\mu}m$ 반도체 레이저 다이오드 및 광 증폭기 분야에서 InAs/InP 양자점이 많은 관심을 받고 있으나, InAs/GaAs 양자점에 비해 제작이 어려운 단점을 가지고 있다. InAs/InP 양자점은 InAs/GaAs 양자점에 비해 격자 불일치가 작아 양자점의 크기가 크고 특히 As 계 박막과 P 계박막의 계면에서 V 족 원소 교환 반응으로 계면 특성 저하가 발생하여 성장이 까다롭다. As 과 P 간의 교환반응은 성장온도와 V/III 에 의해 크게 영향을 받는 것으로 보고되었다. 그러나, P계 InGaAsP 박막 위에 InAs 성장 시 발생하는 As/P 교환반응에 대한 연구는 매우 적다. 본 연구에서는 InGaAsP 박막 위에 InAs 양자점 성장 시 GI (growth interruption)에 의한 As/P 교환반응이 InAs 양자점의 형상 및 광학적 특성에 미치는 영향을 연구하였다. 시료는 수직형 저압 Metal Organic Chemical Vapor Deposition (MOCVD)를 이용하여 $520^{\circ}C$의 온도에서 성장하였다. 그림1(a) 구조의 양자점은 InP (100) 기판위에 InP buffer layer를 성장한 후 InP와 격자상수가 일치하는 $1.1{\mu}m$ 파장의 InGaAsP barrier를 50 nm 성장하였다. 그 후 As 분위기 하에서 다양한 GI 시간을 주었고 그 위에 InAs 양자점을 성장하였다. 양자점 성장 후 InGaAsP barrier를 50 nm, InP capping layer를 50 nm 성장하였다. AFM측정을 위해 InP capping layer 위에 동일한 GI 조건의 InAs/InGaAsP 양자점을 성장하였고 양자점 성장 후 As분위기 하에 온도를 내려주었다. 그림1(b) 구조의 양자점은 그림1(a) 와 모든 조건은 동일하나 InAs 양자점과 InGaAsP barrier 사이에 GaAs 2ML를 삽입한 구조이다. 양자점 형상 특성 평가는 Atomic force microscopy를 이용하였으며, 광특성 분석은 Photoluminescence를 이용하였다.