• Membrane and Water Treatment
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• v.11 no.2
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• pp.167-172
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• 2020

The effectiveness of in situ sediment capping as a technique for heavy metal risk mitigation in Hyeongsan River estuary, South Korea was studied. Sites in the estuary were found previously to show moderate to high levels of contamination of mercury, methylmercury and other heavy metals. A 400 m x 50 m section of the river was selected for a thin layer capping demonstration, where the total area was divided into 4 sections capped with different combinations of capping materials (zeolite, AC/zeolite, AC/sand, zeolite/sand). Pore water concentrations in the different sites were studied using diffusive gradient in thin film (DGT) probes. All capping amendments showed reduction in the pore water concentration of the different heavy metals with top 5 cm showing %reduction greater than 90% for some heavy metals. The relative maxima for the different metals were found to be translated to lower depths with addition of the caps. For two-layered cap with AC, order of placement should be considered since AC can easily be displaced due to its relatively low density. Investigation of methylmercury (MeHg) in the site showed that MeHg and %MeHg in pore water corresponds well with maxima for sulfide, Fe and Mn suggesting mercury methylation as probably coupled with sulfate, Fe and Mn reduction in sediments. Our results showed that thin-layer capping of active sorbents AC and zeolite, in combination with passive sand caps, are potential remediation strategy for sediments contaminated with heavy metals.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.162-165
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• 2007

We investigated the effects of the capping layer materials on the crystallization of the amorphous top-CoFeB (t-CoFeB) electrode and the magnetoresistance properties of the magnetic tunnel junctions (MTJs). When the hcp(002)-textured Ru capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe(110). The CoFe(110)/Ru(002) texture relation can be minimized the lattice mismatch down to 5.6%. However, when the fine polycrystalline but almost amorphous TiAl or amorphous ZrAl were used, the amorphous t-CoFeB was crystallized to bcc-CoFe(002). When the amorphous capping materials were used, the evolution of the t-CoFeB texture was affected mainly by the MgO(001) texture. Consequently, the M ratios of the annealed MTJ capped with the ZrAl and TiAl (72.7 and 71.8%) are relatively higher than that of the MTJ with Ru capping layer (46.7%). In conclusions, the texture evolution of the amorphous t-CoFeB during the post deposition annealing could be controlled by the crystallinity of the adjacent capping layer and in turn, it affects the TMR ratio of MTJs.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.23-28
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• 2009

We investigated the wafer-level MEMS capping process for which cavity formation in Si wafer was not required. Ni caps were formed by electrodeposition on 4" Si wafer and Ni rims of the Ni caps were bonded to the Cu rims of bottom Si wafer by using epoxy. Then, top Si wafer was debonded from the Ni cap structures by using SnBi layer of low melting temperature. As-evaporated SnBi layer was composed of double layers of Bi and Sn due to the large difference in vapor pressures of Bi and Sn. With keeping the as-evaporated SnBi layer at $150^{\circ}C$ for more than 15 sec, SnBi alloy composed of eutectic phase and Bi-rich $\beta$ phase was formed by interdiffusion of Sn and Bi. Debonding between top Si wafer and Ni cap structures was accomplished by melting of the SnBi layer at $150^{\circ}C$.

• Journal of The Korean Society of Agricultural Engineers
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• v.57 no.4
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• pp.31-38
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• 2015

This study aims to assess the effectiveness of limestone, zeolite, and crushed concrete as capping material to block the release of heavy metals (As, Cu, Cr, Ni, and Pb) and reduce the sediment oxygen demand. The efficiency of limestone, zeolite, and crushed concrete was evaluated in a reactor in which a 1-cm thick layer of capping materials was placed on the sediments collected from Inchon north harbor. Dissolved oxygen concentration and heavy metal concentration in seawater above the uncapped sediments and capping material were monitored for 17 days. The sediment oxygen demand was in the following increasing order: crushed concrete ($288.37mg/m^2{\cdot}d$) < zeolite ($428.96mg/m^2{\cdot}d$) < limestone ($904.53mg/m^2{\cdot}d$) < uncapped ($981.34mg/m^2{\cdot}d$). The capping materials could reduce the sediment oxygen demand by blocking the release of biochemical matters consuming dissolved oxygen in seawater. It was also shown that zeolite and crushed concrete could effectively block the release of Cu, Ni, and Pb but those were not effective for the interruption of As and Cr release from marine contaminated sediments.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.50-51
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• 2002

최근 실온에서 약 40％ 이상의 높은 자기저항(magnetoresistance, MR)을 나타내는 자기 터널 접합(magnetic tunnel junction, MTJ)이 보고되면서 비휘발성 자기메모리로의 응용을 눈앞에 두고 있다.[1]. 이에 본 실험에서는 Substrate / Ta (base electrode) / NiFe / PtMn (AF pinning layer) / CoFe (pinned) / Ru / CoFe (fixed) / Al-O/ CoFe (free) / NiFe (free) / Ta & Ru (Capping Layer)과 같은 MTJ 증착 구조를 사용하여, MTJ의 보다 향상된 특성을 확보하기 위한 노력으로서 Al-O 두께, 어닐링 조건(Field Intensity ＆ Sequence)변화 등을 시도하였다. (중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.429-429
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• 2010

TFT 제조 방법 중 LTPS (Low Temperature Polycrystalline Silicon)는 저온과 저비용 등의 이점으로 인하여 flat panel display 제작에 널리 사용된다. 이동도와 전류 점멸비 등에서 이점을 가지는 ELA(Excimer Laser Annealing)가 널리 사용되고 있지만, 이 방법은 uniformity 등의 문제점을 가지고 있다. 이를 극복하기 위한 방법으로 MICC(Metal Induced Capping Crystallization)이 사용되고 있다. 이 방법은 $SiN_x$, $SiO_2$, SiON등의 capping layer를 diffusion barrier로 위치시키고, Ni 등의 금속을 capping layer에 도핑 한 뒤, 다시 한번 열처리를 통하여 a-Si에 Ni을 확산시키킨다. a-Si 층에 도달한 Ni들이 seed로 작용하여 Grain size가 매우 큰 film을 제작할 수 있다. 채널의 grain size가 클 경우 grain boundary에 의한 캐리어 scattering을 줄일 수 있기 때문에 MIC 방법을 사용하였음에도 ELA에 버금가는 소자의 성능과 안정성을 얻을 수있었다. 본 연구에서는 large grain TFT의 Gate bias stress에 따른 소자의 안정성 측정 및 분석에 목표를 두었다.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.45-48
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• 2014

We have investigated the effects of an Ag capping layer on the emission characteristics of transparent organic light-emitting devices with Ca/Ag double-layer cathodes. The thickness of the Ag layer was varied from 10 to 30 nm, whereas the Ca was fixed to be a 10 nm in the Ca/Ag structure. The luminance and current efficiency on the cathode and anode sides are significantly dependent on the Ag thickness. For example, the current efficiency on the anode side increases from 8.4 to 11.7 cd/A, whereas, on the cathode side, it decreases from 3.2 to 0.2 cd/A as the Ag thickness increases from 10 to 30 nm. These changes in emission characteristics were investigated by measuring electroluminescence, transmission, and reflection spectra.

• Membrane and Water Treatment
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• v.11 no.1
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• pp.11-23
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• 2020

The effectiveness of in situ sediment capping as a technique for heavy metal risk mitigation in Hyeongsan River estuary, South Korea was studied. Sites in the estuary were found previously to show moderate to high levels of contamination of mercury, methylmercury and other heavy metals. A 400 m × 50 m section of the river was selected for a thin layer capping demonstration, where the total area was divided into 4 sections capped with different combinations of capping materials (zeolite, AC/zeolite, AC/sand, zeolite/sand). Pore water concentrations in the different sites were studied using diffusive gradient in thin film (DGT) probes. All capping amendments showed reduction in the pore water concentration of the different heavy metals with top 5 cm showing %reduction greater than 90% for some heavy metals. The relative maxima for the different metals were found to be translated to lower depths with addition of the caps. For two-layered cap with AC, order of placement should be considered since AC can easily be displaced due to its relatively low density. Investigation of methylmercury (MeHg) in the site showed that MeHg and %MeHg in pore water corresponds well with maxima for sulfide, Fe and Mn suggesting mercury methylation as probably coupled with sulfate, Fe and Mn reduction in sediments. Our results showed that thin-layer capping of active sorbents AC and zeolite, in combination with passive sand caps, are potential remediation strategy for sediments contaminated with heavy metals.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.57-62
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• 1999

Polycrystaline thin film transistors are fabricated on the transparent glass substrate by a lamp-scan annealing. The line-shaped lamp scanning method, which is profitable for large area process, effectively radiated silicon film on glass substrate. Amorphous silion film absorbs the light which is emitted from halogen-lamp and it transformed into crystalline silicon by metal-induced lateral crystallization. In order to enhance the annealing effect, capping layer was deposited on the whole substrate. When the scan speed was 1-2mm/sec, lateral crystallization of amorphous silicon under capping layer was 18~27${\mu}m/scan$. The thin film transistor fabricated by this method shows high electron mobility over 130$cm^2/V{\cdot}sec$

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.23-28
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• 2004

We utilized Ag capping layer for fluxless bonding. To investigate the effect of Ag capping layer, two sets of sample were used. One set was bare In and Sn solders. The other set was In and Sn solders with Ag capping layer. In ($10{\mu}m$) and Sn ($10{\mu}m$) solders were deposited on Cu/Ti/Si substrate using thermal-evaporation, and Ag ($0.1{\mu}m$) capping layers were deposited on In and Sn solders. Solder joints were made by joining two In and Sn deposited specimens at $130^{\circ}C$ for 30 s under 0.8, 1.6, 3.2 MPa using thermal compression bonder. The contact resistance was measured using four-point probe method. The shear strength of the solder joints was measured by the shear test of cross-bar sample in the direction. The microstructure of the solder joints was characterized with SEM and EDS. In and Sn solders without Ag capping layers were only bonded at $130^{\circ}C$ under high bonding pressure. Also the shear strength of the In-Sn solder joints under was lower than that of the Ag/In-Ag/Sn solder joints. The resistance of the solder joints was $2-4\;m{\Omega}$ The solder joints consisted of In-rich phase and Sn-rich phase and the intermixed compounds were found at the interface. As bonding pressure increased, the intermixed compounds formed more.