• Title/Summary/Keyword: Capacitor Structure

검색결과 532건 처리시간 0.04초

반투명 전극으로 된 다공질 실리콘 알코올 가스 센서의 C-V 특성 (C-V Characteristics of Porous Silicon Alcohol Sensors with the Semi-transparent Electrode)

  • 김성진;이상훈
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.1085-1088
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    • 2003
  • In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its I-V and C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/Oxidized porous silicon/porous silicon/Silicon/Al, where the silicon substrate is etched anisotropically to be prepared into a membrane shape. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator- semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

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축소형 부하불평형 보상장치의 개발 및 시험 (Development and Operation of Small-Scaled Equipment for Improving Unbalanced Load in Railway)

  • 김주락;한문섭;강문호;김정훈
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2007년도 춘계학술대회 논문집
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    • pp.809-815
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    • 2007
  • This paper proposes the analysis on new equipment for power quality in electrified railway. The proposed equipment consists of series and parallel inverter. Each inverter is connected by capacitor as dc link. This structure can be compensated for active and reactive power in catenary through transformer.

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Supercapacitors using Pure Single-walled Carbon Nanotubes

  • Tanaike, Osamu;Futaba, Don N.;Hata, Kenji;Hatori, Hiroaki
    • Carbon letters
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    • 제10권2호
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    • pp.90-93
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    • 2009
  • The excellent and characteristic capacitor performance of pure single-walled carbon nanotubes (SWNTs), which differ from conventional activated carbon electrodes, is reported. SWNTs with little bundling showed higher specific capacitance than activated carbons. High operating voltage can be expected for pure SWNTs without metal contamination and graphene edge structure.

전기철도 급전시스템 전력품질 향상을 위한 새로운 보상장치 검토 (Analysis on New Equipment for countermeasure of Power Quality in Electric Railway)

  • 김주락;한문섭;이장무;정호성;김희중
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2004년도 추계학술대회 논문집
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    • pp.1396-1401
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    • 2004
  • This paper proposes analysis on new equipment for power quality in electric railway. The Proposed equipment consists of series inverter and parallel inverter. Each inverter is connected by capacitor as de link. This structure can be compensated for active and reactive power in catenary through transformer.

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부하불평형 해소를 위한 축소형 보상설비 개발 (Development of the down-scaled compensator for the solution of unbalanced load)

  • 김주락;한문섭;이장무;정호성;박현준;강문호;김정훈
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2005년도 추계학술대회 논문집
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    • pp.649-654
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    • 2005
  • This paper proposes analysis on new equipment for power quality in electric railway. The proposed equipment consists of series inverter and parallel inverter. Each inverter is connected by capacitor as dc link. This structure can be compensated for active and reactive power in catenary through transformer.

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전기철도용 축소형 부하불평형 보상설비 개발 (Development of Small-Scaled Equipment for Improving Unbalanced Load in Railway)

  • 김주락;강문호;김정훈;박현준
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2006년도 추계학술대회 논문집
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    • pp.921-927
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    • 2006
  • This paper proposes the analysis on new equipment for power quality in electrified railway. The proposed equipment consists of series and parallel inverter. Each inverter is connected by capacitor as dc link. This structure can be compensated for active and reactive power in catenary through transformer.

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3상 다이오드 정류기의 Simulink 모델 (Simulink Model of 3-Phase Diode Rectifiers)

  • 이진우
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2001년도 전력전자학술대회 논문집
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    • pp.514-519
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    • 2001
  • Most of inverters adopt a diode rectifier as an input stage, which has very simple and rugged structure and therefore low cost. In order to properly design the 3-phase diode rectifier with an output smoothing capacitor and input inductors, it is necessary to fully simulate the system due to its nonlinear characteristics. Therefore this paper describes the operating behaviors including the current commutation in detail by using the proposed equivalent circuit, and also proposes the Simulink-based model of the system. The simulation results show the validity of the proposed model in all operating conditions.

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개선된 DWA 구조를 갖는 3차 3-비트 SC Sigma-Delta Modulator (A $3^{rd}$ order 3-bit Sigma-Delta Modulator with Improved DWA Structure)

  • 김동균;조성익
    • 대한전자공학회논문지SD
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    • 제48권5호
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    • pp.18-24
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    • 2011
  • DEM(Dynamic Element Matching) 기법중의 하나인 DWA(Data Weighted Averaging)는 멀티비트 Sigma-Delta Modulator에서 피드백 DAC의 단위요소 커패시터 부정합으로 인한 비선형성을 제거하기 위하여 널리 이용된다. 본 논문에서는 기존 DWA 구조에서 적용된 클록 타이밍을 조정하여 양자화기 데이터 코드 출력을 Latch 하는 $2^n$ Register 블록을 $2^n$ S-R latch 블록으로 대체하여 MOS Tr.를 줄임과 더불어 여분의 클록을 제거하였고, n-bit 데이터 코드를 지연시키기 위해 사용되는 2개의 n-비트 Register 블록을 1개의 n-비트 Register 블록으로 감소시켰다. 개선된 DWA 구조를 이용하여 3차 3-비트 SC(Switched Capacitor) Sigma-Delta Modulator를 설계한 후, 입력 주파수 20kHz, 샘플링 주파수 2.56MHz에서 0.1% DAC 단위 요소 커패시터 부정합을 갖도록 하여 시뮬레이션 한 결과 기존의 구조와 동일한 해상도를 얻을 수 있었고, 222개의 MOS Tr. 수를 줄일 수 있었다.

Improvement of Electrical Properties by Controlling Nickel Plating Temperatures for All Solid Alumina Capacitors

  • Jeong, Myung-Sun;Ju, Byeong-Kwon;Oh, Young-Jei;Lee, Jeon-Kook
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.25.2-25.2
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    • 2011
  • Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).

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