• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.11-16
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• 2002

In this study, the dry etching characteristics of $SrBi_2Ta_2O_9$ (SBT) thin films were investigated by using ICP-RIE (inductively coupled plasma-reactive ion etching). The etching damage and degradation were analyzed with XPS (X-ray photoelectron spectroscopy) and C-V (Capacitance-Voltage) measurement. The etching rate increased with increasing the ICP power and the capacitively coupled plasma (CCP) power. The etch rate of 900$\AA$/min was obtained with 700 W of ICP power and 200 W of CCP power. The main problem of dry etching is the degradation of the ferroelectric material. The damage-free etching characteristics were obtained with the $Ar/C1_2/CHF_3$ gas mixture of 20/14/2 when the ICP power and CCP power were biased at 700 W and 200 W, respectively. The experimental results show that the dry etching process with ICP-RIE is applicable to the fabrication of the single transistor type ferroelectric memory device.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1408-1409
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• 2006

In this paper, poly methyl methacrylate thin films were deposited on a ITO glass substrate using a plasma polymerization technique. In order to investigate the influence of the plasma coupling method and plasma conditions on the plasma polymerized poly methyl methacrylate (ppMMA) thin film properties, inductively coupled (ICP) and capacitively coupled plasma (CCP) were used to generate the plasma and the plasma parameters were varied. Molecular structures of the ppMMAs were investigated using a Fourier Transform Infrared (FT-IR) spectroscopy. Dielectric constants of the ppMMA thin films were investigated using a impedance analyzer (HP4192A, LF Impedance Analyzer). Current-Voltage (I-V) characteristics of the ppMMA thin films were investigated using a source measurement unit (SMU: Keithley 2400). Relationship between the plasma coupling technique/process parameter and ppMMA thin films properties were investigated.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1347-1348
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• 2007

In this paper, ITO gate electrode surface was modified using $O_2$ plasma and organic gate insulating layers were deposited on the ITO surface using plasma polymerization technique. In order to investigate the influence of the plasma coupling method and plasma conditions on the plasma polymerized methyl methacrylate (ppMMA) thin film properties, inductively coupled (ICP) and capacitively coupled plasma (CCP) were used to generate the plasma and the plasma parameters were varied. The ppMMAs were investigated using atomic force microscopy (AFM) and a Fourier Transform Infrared (FT-IR) spectroscopy. Dielectric constants of the ppMMA thin films were investigated using a impedance analyzer (HP4192A, LF Impedance Analyzer). Current-Voltage (I-V) characteristics of the organic thin film transistors (OTFTs) were investigated using a source measurement unit (SMU: Keithley 2612). Proposed method can be applied to dry-process to fabricate OTFTs during overall fabricating steps.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.156.2-156.2
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• 2015

반도체 소자의 크기가 나노사이즈로 줄어들기 때문에, 건식식각의 중요성이 강조되고 있다. dual plasma source를 사용함으로써 plasma 밀도, 이온충돌에너지, 이온플럭스를 조절 가능하다. Low frequency로 이온에너지를 조절하고, high frequency로 이온플럭스를 일반적으로 조절한다. 본 연구는 inductively coupled plasma (ICP)와 capacitively coupled plasma (CCP)를 사용하는 dual plasma source이다. ICP는 AE RPS로 2.4 MHz를 사용하고, CCP는 AE RFX-600으로 13.56 MHz이다. single L-probe는 Hiden ESPion이고, quadrupole mass spectrometer (QMS)는 INFICON CPM-300이다. chuck에 CCP가 인가되고, ICP는 SUS mesh를 거쳐서 영향을 미친다. Gas는 Ar, Ar+CF4 두 조건에서 비료를 하였다. Single L-probe를 이용하여 플라즈마를 측정한 결과 CCP만 인가하였을 때, Te 2.05 eV, Ne 4.07E+10 #/cm3, Ni 5.82E+10 #/cm3의 결과를 얻을 수 있었다. ICP를 방전하고 mesh를 통해서 chuck으로 입사하는 이온을 측정한 결과 mesh에 의해 이온이 중성화되어 거의 입사하지 않음을 확인할 수 있었다. 최종적으로 이온의 영향이 상쇄되고, 라디칼의 영향이 증가하여 높은 etch rate와 선택비를 가지며, 등방성 식각의 영향이 커질 것으로 사료된다.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.213-219
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• 1997

The plasma polymerized styrene films were prepared by using an inter-electrode capacitively coupled gas-flow-type reactor, and the effects of plasma polymerization condition on the molecular weight distribution were investigated by Fourier Transform Infrared (FT-IR), Pyrolysis Gas Chromatography(PyGC), Differential Scanning Calorimetry(DSC) and Gel Permeation Chromatography(GPC). From the above results, the very cross-linked films different from chemical characteristics of the starting monomer were taken out, and it is realized that the molecular structure, cross linking density, and molecular weight distribution could be controlled by changing the parameters such as deposition pressure, deposition power and gas flow rate. Accordingly, it is suggested that plasma polymerization method performed by inter-electrode capacitively coupled gas-flow-type reactor has good characteristics for manufacturing the functional organic thin films which can be applied in sensors, opto-electric device, photo-resist by changing the polymerization parameters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.131-134
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• 1998

This work was carried out to develop a pattern on the nanometer scale using plasma polymerization and plasma etching. This study is also aimed at developing a resist for the nano process and a vacuum lithography process. The thin films of plasma polymerization were fabricated by the plasma po1ymerization of inter-electrode capacitively coupled gas flow system. After delineating the pattern at accelerating voltage of 30[kV]. ranging the dose of 1∼500[${\mu}$C/$\textrm{cm}^2$], the pattern was developed with dry tree and formed by plasma etching. By analysing of the molecule structure using FT-lR, it was confirmed that the thin films of PPMST contains the functional radicals of the MST monomer. The thin films of PPMST had a highly crosslinked structure resulting in a higher molecule weight than the conventional resist.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.136.2-136.2
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• 2015

반도체 제조는 chip의 성능 향상 및 단가 하락을 위해 지속적으로 pattern size가 nano size로 감소해 왔고, capacitor 용량은 증가해 왔다. 이러한 현상은 contact hole의 aspect ratio를 지속적으로 증가시킨바, 그에 따라 최적의 HARC (high aspect ratio contact)을 확보하는 적합한 dry etch process가 필수적이다. 그러나 HARC dry etch process는 많은 critical plasma properties 에 의존하는 매우 복잡한 공정이다. 따라서, critical plasma properties를 적절히 조절하여 higher aspect ratio, higher etch selectivity, tighter critical dimension control, lower P2ID과 같은 plasma characteristics을 확보하는 것이 요구된다. 현재 critical plasma properties를 제어하기 위해 다양한 plasma etching 방법이 연구 되어왔다. 이 중 plasma를 낮은 kHz의 frequency에서 on/off 하는 pulsed plasma etching technique은 nanoscale semiconductor material의 etch 특성을 효과적으로 향상 시킬 수 있다. 따라서 본 실험에서는 dual-frequency capacitive coupled plasma (DF-CCP)을 사용하여 plasma operation 동안 duty ratio와 pulse frequency와 같은 pulse parameters를 적용하여 plasma의 특성을 각각 제어함으로써 etch selectivity와 uniformity를 향상 시키고자 하였다. Selective SiO2 contact etching을 위해 top electrode에는 60 MHz pulsed RF source power를, bottom electrode에는 2MHz pulse plasma를 인가하여 synchronously pulsed dual-frequency capacitive coupled plasma (DF-CCP)에서의 plasma 특성과 dual pulsed plasma의 sync. pulsing duty ratio의 영향에 따른 etching 특성 등을 연구 진행하였다. 또한 emissive probe를 통해 전자온도, OES를 통한 radical 분석으로 critical Plasma properties를 분석하였고 SEM을 통한 etch 특성분석과 XPS를 통한 표면분석도 함께 진행하였다. 그 결과 60%의 source duty percentage와 50%의 bias duty percentage에서 가장 향상된 etch 특성을 얻을 수 있었다.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1343-1345
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• 1998

This work was carried out to develop a pattern on the nanometer scale using plasma polymerization and plasma etching. This study is also aimed at developing a resist for the nano process and a vacuum lithography process. The thin films of plasma polymerization were fabricated by the plasma polymerization of inter-electrode capacitively coupled gas flow system. After delineating the pattern at accelerating voltage of 30[kV], ranging the dose of $1-500[{\mu}C/cm^2$], the pattern was developed with dry type and formed by plasma etching.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.486-486
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• 2012

반도체 식각 공정에서 이온의 플럭스와 충돌 에너지를 각각 조절하고자 Dual frequency RF source가 사용된다. 듀얼 freuqnecy RF가 인가된 Capacitively coupled plasma (CCP) 의 경우, 기판에 걸린 Low freuqency (LF) RF 소스에 의하여 이온의 에너지를 조절하고, High frequency (HF) 소스를 조절하여 이온의 플럭스를 조절하는 것이 일반적이다. 그러나 LF의 세기가 증가함에 따라서, 플라즈마의 밀도가 오히려 감소하는 문제점이 있었다. 이 경우, 약한 자장을 플라즈마에 걸어줌으로써 밀도가 감소되는 문제를 해결할 수 있다고 알려져 왔다. Inductively coupled plasma (ICP) 에서는 HF를 안테나에 가하여 이온의 플럭스를 조절하고, LF를 기판에 가하여 이온의 충돌 에너지를 조절하는 것이 일반적인데, 위와 동일한 문제가 이 경우에도 발생하는 것을 확인 하였다. CCP와 마찬가지로, 바이어스에 걸린 파워의 세기가 증가함에 따라서 플라즈마의 밀도가 감소하고 전자의 온도가 증가하는 현상을 확인하였다. 또한 이때에도, 약한 자장을 걸어줌으로써 플라즈마의 밀도가 감소하지 않고 유지될 수 있으며, 전자의 온도 또한 유지될 수 있음을 발견하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1568-1570
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• 2009

Nanocrystalline silicon thin films were deposited using an internal-type inductively coupled plasma-chemical vapor deposition at room temperature by varying the bias power to the substrate and the structural characteristics of the deposited thin film were investigated. The result showed that the crystalline volume fraction was decreased with the increase of bias power. At the low bias power range of 0~60 W, the compress stress in the deposited thin film was in the range of -34 ~ -77 Mpa which is generally lower than the residual stress observed for the nanocrystalline silicon thin films deposited by capacitively coupled plasma.