• Title/Summary/Keyword: Capacitively

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Fabrication and Characterization of Gate Insulator Thin Films prepared by Plasma Polymerization (플라즈마 중합법에 의한 게이트 절연박막의 제작 및 특성)

  • Son, Young-Do;Hwang, Myung-Whan;Lim, Jae-Sung;Shin, Paik-Kyun
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.12
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    • pp.48-53
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    • 2011
  • Polymer thin films were prepared by capacitively coupled plasma polymerization process for application of gate insulator. The polymer thin films revealed to form polymer layers with original properties of the monomer. Among the plasma polymer thin films, the styrene polymer having large number of phenyl sites revealed higher dielectric constant of k=3.7 than that of conventional polymer. The plasma polymerized styrene thin film revealed no hysteresis characteristics and low leakage current density of $1{\times}10^{-8}[Acm^{-2}]$ at field strength of $1[MVcm^{-1}]$, which measured by I-V and C-V measurements using MIM and MIS devices.

Study on the Formation of SiOC Films and the Appropriate Annealing Temperature

  • Oh, Teresa
    • Journal of information and communication convergence engineering
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    • v.9 no.2
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    • pp.217-219
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    • 2011
  • As silicon devices shrink and their density increases, the low dielectric constant materials instead of $SiO_2$ film is required. SiOC film as low-k films was deposited by the capacitively coupled plasma chemical vapor deposition and then annealed at $300{\sim}500^{\circ}C$ to find out the properties of the dependence on the temperature and polarity. This study researched the dielectric constant using by the structure of the metal/SiOC film/p-Si, chemical shift, thickness, refractive index and hardness. The trend of reflective index was inverse proportioned the thickness, but the dielectric constant was proportioned it. The dielectric constant decreased with decreasing the thickness and the increment of the refractive index.

Preparation and Characterization of Thin Films by Plasma Polymerization of Hexamethyldisiloxane

  • Lee, Sang-Hee;Lee, Duck-Chool
    • Electrical & Electronic Materials
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    • v.11 no.10
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    • pp.66-71
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    • 1998
  • Plasma polymerized hexamethyldisiloxane (PPHMDSO) thin films were produced using an electrode capacitively coupled apparatus. Fourier transform infrared spectroscopy analysis indicated that the thin film spectra are composed not only of the corresponding monomer bands but also of several new bands. Auger electron spectroscopy analysis indicated that the permeation depth of aluminum into the films is ca. 30nm when top electrode is deposited by evaporation aluminum. The increase of relative dielectric constant and decrease of dielectric loss tangent with the discharge power is originated from high cross-link of the films.

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Electrical Properties of Plasma Polymerized Hexamethyldisiloxane Thin Film (플라즈마 중합법에 의한 헥사메틸디실록산 박막의 전기적 특성)

  • 이상희;이덕출
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.1
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    • pp.43-47
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    • 2001
  • Plasma polymerized hexamethyldisiloxane thin film was fabricated by employing an inter-electrode capacitively coupled type apparatus under the following conditions : carrier gas flow rate of 11 sccm, reaction pressure of 0.1 torr, discharge frequency of 13.56 MHz and discharge power of 30∼90 W. Polymerization rate of thin film fabricated at the discharge power of 90W is 32.5nm/min. Relative dielectric constant and dielectric loss tangent of thin film shows 3.2∼3.8 and 2.6x10$\^$-3/∼4.51x10$\^$-3/ respectively in the frequency range of 1 kHz∼1 MHz. As the annealing temperature is increased, the relative dielectric constant gradually decreases while the dielectric loss tangent increases. The current density increase gradually with increasing annealing temperature and electric field. The electric conduction of the heaxamethyldisiloxane thin film shows Schottky effect.

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The Effect of Interference Current on the I-V Characteristic Curve of Josephson Junction in Stewart-McCumber Model (Stewart-McCumber Model에서 간섭전류에 의한 조셉슨접합의 I-V 특성 변화)

  • Hong, Hyun-Kwon;Kim, Kyu-Tae;Lee, Kie-Young
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.233-236
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    • 1999
  • To investigate the effect of interference current between pairs and quasi-particles, we have calculated the change I-V characteristic curve of resistively and capacitively shunted Josephson junction with external microwave by simulation of modified Stewart-McCumber model. Such rf-induced constant-voltage steps and the immunity against to noise were found to be changed in the presence of interference current.

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Characteristics of Luminance and Efficiency for External Electrode Fluorescent Lamps Driven by Square Pulses (구형파로 구동되는 외관전극 형광램프의 휘도 및 효율 특성)

  • 조태승;김영미;권남옥;김성중;강준길;최은하;조광섭
    • Journal of the Korean Vacuum Society
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    • v.11 no.1
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    • pp.76-80
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    • 2002
  • Characteristic properties of fluorescent lamps operated by capacitively-coupled external electrodes have been investigated. External electrode fluorescent lamps(EEFLs) are typically operated at low currents less than 10 mA, and high voltages of about 1.5 kV. Luminance of up to 20,000 cd/$\textrm m^2$ with efficiency of above 40 lm/W is achieved in EEFLs driven by square pulses of the frequency lower than 100 kHz. It is also found that the brightness and efficiency of external electrode fluorescent lamps depend on the electrode length whose optimum length is about 3 cm.

Nanometer Scale Vacuum Lithography using Plasma Processes (플라즈마 공정을 이용한 나노미터 단위의 진공리소그래피)

  • Kim, S.O.;Park, B.K.;Park, J.k.;Lee, K.S.;Lee, J.;Yuk, J.H.;Ra, D.K.;Lee, D.C.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1343-1345
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    • 1998
  • This work was carried out to develop a pattern on the nanometer scale using plasma polymerization and plasma etching. This study is also aimed at developing a resist for the nano process and a vacuum lithography process. The thin films of plasma polymerization were fabricated by the plasma polymerization of inter-electrode capacitively coupled gas flow system. After delineating the pattern at accelerating voltage of 30[kV], ranging the dose of $1-500[{\mu}C/cm^2$], the pattern was developed with dry type and formed by plasma etching.

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design and Resonant Characteristics Analysis of a Vibrating Angular Rate Senser of Microstructure (진동형 미세구조 각속도 센서의 공진 특성 해석 및 설계)

  • 홍윤식
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1996.04a
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    • pp.156-160
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    • 1996
  • A vibrating angular rate sensor with tuning fork type resonator of microstructure (940*820 .mu. m$^{2}$) was designed and will be fabricated by polysilicon surface micromaching. The angular rate sensor is driven in a lateral direction by electrostatic force of comb drive electrodes, and vertical vibrations of the sensor, thich is detected capacitively, are produced by Coriolis forces due to an external angular rate. Mechanical Q factors and a difference between the frequencies of the two resonant modes, the driving mode and detecting mode, play a great role in increasing the sensitivity of the sensor. To be a highly sensitive sensor, it was designed to have as small frequency discrepancy of the two resonant modes as possible. Finite element method was used for the modal analysis. Several design parameters were selected and their contributions to the modal frequencies were investigated. A method was presented for tuning the detecting mode frequency by DC bias on the drive electrodes.

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Signal Transient and Crosstalk Model of Capacitively and Inductively Coupled VLSI Interconnect Lines

  • Kim, Tae-Hoon;Kim, Dong-Chul;Eo, Yung-Seon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.4
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    • pp.260-266
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    • 2007
  • Analytical compact form models for the signal transients and crosstalk noise of inductive-effect-prominent multi-coupled RLC lines are developed. Capacitive and inductive coupling effects are investigated and formulated in terms of the equivalent transmission line model and transmission line parameters for fundamental modes. The signal transients and crosstalk noise expressions of two coupled lines are derived by using a waveform approximation technique. It is shown that the models have excellent agreement with SPICE simulation.

Preparation of plasma-polymerized polythiophene films (플라즈마 중합된 폴리티오펜 필름의 제조)

  • Kim, Tae-Young;Kim, Jong-Eun;Kim, Won-Jung;Suh, Kwang-S.
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1419-1421
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    • 2002
  • Plasma polymerization of thiophene was carried out in a vacuum reactor with capacitively coupled electrode. This paper describes the dependence of molecular structure and electrical properties on the polymerization conditions such as plasma energy, mass flow rate and pressure. The plasma polymerized thiophene films were chracterized by FT-IR spectroscopy and SEM. The IR analysis revealed the thiophene rings are broken by the discharge energy.

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