조명전기설비학회논문지 (Journal of the Korean Institute of Illuminating and Electrical Installation Engineers)

한국조명전기설비학회 (The Korean Institute of IIIuminating and Electrical Installation Engineers)
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플라즈마 중합법에 의한 게이트 절연박막의 제작 및 특성

Fabrication and Characterization of Gate Insulator Thin Films prepared by Plasma Polymerization

  • 투고 : 2011.10.18
  • 심사 : 2011.11.16
  • 발행 : 2011.12.30
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초록

Polymer thin films were prepared by capacitively coupled plasma polymerization process for application of gate insulator. The polymer thin films revealed to form polymer layers with original properties of the monomer. Among the plasma polymer thin films, the styrene polymer having large number of phenyl sites revealed higher dielectric constant of k=3.7 than that of conventional polymer. The plasma polymerized styrene thin film revealed no hysteresis characteristics and low leakage current density of $1{\times}10^{-8}[Acm^{-2}]$ at field strength of $1[MVcm^{-1}]$, which measured by I-V and C-V measurements using MIM and MIS devices.

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참고문헌

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