• Proceedings of the KIEE Conference
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.1066-1068
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• 1999

Magnetic field is commonly used in low temperature processing plasmas in order to obtain high density. E $\times$ B magnetron or surface multipole configuration were most popular. However, the properties of capacitively coupled rf plasma confined by axially applied static magnetic fields have rarely been studied. In this paper, the effects of magnetic field on the characteristics of 13.56MHz/40KHz argon plasma will be reported. Ion saturation current, electron temperature and plasma potential were measured by Langmuir probe and omissive probe. At low pressure region ($\sim$10mTorr), ion current was increased by a factor of 3 - 4 due to reduction of diffusion loss of charged particles to the wall. It was observed that magnetic field induces large time variation of the plasma potential. The experimental result was compared with particle-in-cell simulation. It was also observed that electron temperature tend to decrease with increasing magnetic induction level for 40KHz discharge.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.252-253
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• 2009

In this study, the deformation and etch characteristics of ArF and EUV photoresists were compared in a dual frequency superimposed capacitively coupled plasma (DFS-CCP) etcher systems using $CF_{4}/O_{2}/Ar$ and $CF_{4}/CHF_{3}/O_{2}/Ar$ mixture gas chemistry which are typically used for BARC open and $Si_{3}N_{4}$ teching chemistry, respectively. Etch rate of the resists tend to increase with low-frequency source power ($P_{LF}$) and high-frequency source ($f_{HF}$). The etch rate of ArF resist was hgither than that of EUV resist.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• The Transactions of the Korean Institute of Electrical Engineers
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• 제43권5호
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• pp.802-808
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• 1994

The purpose of this paper is to describe an application of plasma polymerized thin film as an electron beam resist. Plasma polymerized thin film was prepared using an interelectrode capacitively coupled gas-flow-type reactor, and chosen methylmethacrylate(MMA)and methylmethacrylate-tetrameth-yltin(MMA-TMT) as a monomer. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage of 30kV and an expose dose ranging from 20 to 900$\mu$C/cmS02T. The delineated pattern in the resist was developed with the same reactor which is used for polymerization using an argon as etching gas. The growth rate and etching rate of the thin film is increased with increasing of discharge power. Thin films by plasma polymerization show polymerization rate of 30~45($\pm$3) A/min, and etching rate of 440($\pm$30) A/min during Ar plasma etching at discharge power of 100W. In apparently lower than that of conventional PMMA, but the plasma-etching rate of PP(MMA-TMT) was higher than that of PPMMA.

• Journal of Semiconductor Engineering
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• 제2권1호
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• pp.109-118
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• 2021

This review paper describes the overall operating principle of a discrete-time delta-sigma modulator (DTDSM) and a continuous-time delta-sigma modulator (CTDSM) using a switched-capacitor (SC). In addition, research that has solved the problems related to each delta-sigma modulator (DSM) is introduced, and the latest developments are explained. This paper describes the chopper-stabilization technique that mitigates flicker noise, which is crucial for the DSM. In the case of DTDSM, this paper addresses the problems that arise when using SC circuits and explains the importance of the operational transconductance amplifier performance of the first integrator of the DSM. In the case of CTDSM, research that has reduced power consumption, and addresses the problems of clock jitter and excess loop delay is described. The recent developments of the analog front end, which have become important due to the increasing use of wireless sensors, is also described. In addition, this paper presents the advantages and disadvantages of the three-opamp instrumentation amplifier (IA), current feedback IA (CFIA), resistive feedback IA, and capacitively coupled IA (CCIA) methods for implementing instrumentation amplifiers in AFEs.

• Journal of the Semiconductor & Display Technology
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• 제22권4호
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• pp.7-12
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• 2023

The edge ring placed on the outside of the electrostatic chuck (ESC) is a key component for protecting the ESC and controlling the etching uniformity of the edge of the wafer. Therefore, it is very important to understand the etching phenomenon of edge rings for edge ring management and equipment homeostasis. In this study, a specimen with SiO₂ hard mask and underlying Si mold was installed on the edge ring surface and the etching results were measured by varying the edge ring 2MHz RF power. By developing PI-VM model with high prediction accuracy and analyzing the roles of key parameters in the model, we were able to evaluate the effect of plasma and sheath characteristics around the edge ring on edge ring erosion. This analysis method provided information necessary for edge ring maintenance and operation.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.310-311
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• 2011

Dual-frequency (DF) capacitively coupled plasmas (CCP) are used to separately control the mean ion energy and flux at the electrodes [1]. This separate control in capacitively coupled radio frequency discharges is one of the most important issues for various applications of plasma processing. For instance, in the Plasma Enhanced Chemical Vapor Deposition processes such as used for solar cell manufacturing, this separate control is most relevant. It principally allows to increase the ion flux for high deposition rates, while the mean ion energy is kept constant at low values to prevent highly energetic ion bombardment of the substrate to avoid unwanted damage of the surface structure. DF CCP can be analyzed in a fashion similar to single-frequency (SF) driven with effective parameters [2]. It means that DF CCP can be converted into SF CCP with effective parameters such as effective frequency and effective current density. In this study, comparison of DF CCP and its converted effective SF CCP is carried out through particle-in-cell/Monte Carlo (PIC-MCC) simulations. The PIC-MCC simulation shows that DF CCP and its converted effective SF CCP have almost the same plasma characteristics. In DF CCP, the negative resistance arises from the competition of the effective current and the effective frequency [2]. As the high-frequency current increases, the square of the effective frequency increases more than the effective current does. As a result, the effective voltage decreases with the effective current and it leads to an increase of the ion flux and a decrease of the mean ion energy. Because of that, the negative resistance regime can be called the preferable regime for solar cell manufacturing. In this preferable regime, comparison of DF (13.56+100 or 200 MHz) CCP and SF (60 MHz) CCP with the same effective current density is carried out. At the lower effective current density (or at the lower plasma density), the mean ion energy of SF CCP is lower than that of DF CCP. At the higher effective current density (or at the higher plasma density), however, the mean ion energy is lower than that of SF CCP. In this case, using DF CCP is better than SF CCP for solar cell manufacturing processes.

• Korean Journal of Materials Research
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• 제19권8호
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• pp.421-426
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• 2009

We report on the capacitively coupled O2 plasma etching of PMMA and polycarbonate (PC) with a diffusion pump. Plasma process variables were process pressure and CCP power at 5 sccm $O_2$ gas flow rate. Characterization was done in order to analyze etch rate, etch selectivity, surface roughness, and morphology using stylus surface profilometry and scanning electron microscopy. Self bias decreased with increase of process pressure in the range of 25$\sim$180 mTorr. We found an important result for optimum pressure for the highest etch rate of PMMA and PC, which was 60 mTorr. PMMA and PC had etch rates of 0.46 and 0.28 ${\mu}m$/min under pressure conditions, respectively. More specifically, etch rates of the materials increased when the pressure changed from 25 mTorr to 60 mTorr. However, they reduced when the pressure increased further after 60 mTorr. RMS roughnesses of the etched surfaces were in the range of 2.2$\sim$2.9 nm. Etch selectivity of PMMA to a photoresist was $\sim$1.5:1 and that of PC was $\sim$0.9:1. Etch rate constant was about 0.04 ${\mu}m$/minW and 0.02 ${\mu}m$/minW for PMMA and PC, respectively, with the CCP power change at 5 sccm $O_2$ and 40 mTorr process pressure. PC had more erosion on the etched sidewall than PMMA did. The OES data showed that the intensity of the oxygen atomic peak (777.196 nm) proportionally increased with the CCP power.

• Proceedings of the KIEE Conference
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1732-1734
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• 1999

In order to study the fabricating condition of phosphor layers of thin film EL devices, some discharge characteristics with several targets in the parallel-plate magnetron sputtering system will be studied. Plasma parameters, such as electron density and temperature, are also studied since they may be considered as one of the very important factors of fabricating condition of thin film EL device.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2007년도 제32회 학술대회 초록집
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• pp.88-88
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• 2007