• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1408-1409
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• 2006

In this paper, poly methyl methacrylate thin films were deposited on a ITO glass substrate using a plasma polymerization technique. In order to investigate the influence of the plasma coupling method and plasma conditions on the plasma polymerized poly methyl methacrylate (ppMMA) thin film properties, inductively coupled (ICP) and capacitively coupled plasma (CCP) were used to generate the plasma and the plasma parameters were varied. Molecular structures of the ppMMAs were investigated using a Fourier Transform Infrared (FT-IR) spectroscopy. Dielectric constants of the ppMMA thin films were investigated using a impedance analyzer (HP4192A, LF Impedance Analyzer). Current-Voltage (I-V) characteristics of the ppMMA thin films were investigated using a source measurement unit (SMU: Keithley 2400). Relationship between the plasma coupling technique/process parameter and ppMMA thin films properties were investigated.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1408-1409
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• 2007

In this paper, we developed a hybrid simulation model of carbon laser ablation under the Ar plasmas consisted of fluid and particle methods. Three kinds of carbon particles, which are carbon atom, ion and electron emitted by laser ablation, are considered in the computation. In the present modeling, we adopt capacitively coupled plasma with ring electrode inserted in the space between the substrate and the target, graphite. This system may take an advantage of ${\mu}m$-sized droplets from the sheath electric field near the substrate. As a result, in Ar plasmas, carbon ion motions were suppressed by a strong electric field and were captured in Ar plasmas. Therefore, a low number density of carbon ions were deposited upon substrate. In addition, the plume motions in Ar gas atmosphere was also discussed.

• Journal of information and communication convergence engineering
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• 제11권1호
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• pp.45-49
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• 2013

A compact radio frequency (RF) bandpass filter (BPF) in low temperature co-fired ceramic (LTCC) is suggested for WiMAX applications. The center frequency ($f_0$) of the BPF is 5.5 GHz and its pass band or 3-dB bandwidth is 700 MHz to cover all the three major bands, low and middle unlicensed national information infrastructure (U-NII; 5.15-5.35 GHz), World Radiocommunication Conference (5.47-5.725 GHz), and upper U-NII/industrial, scientific, and medical (ISM) (5.725-5.85 GHz), for the WiMAX frequency band. A lumped circuit element design-the 5th order capacitively coupled Chebyshev BPF topology-is adopted. In order to design a compact RF BPF, a very thin ($43.18{\mu}m$) ceramic layer is used in LTCC substrate. An interdigital BPF is also designed in silicon substrate to compare the size and performance of the lumped circuit element BPF. Due to the high relative dielectric constant (${\varepsilon}_r$ = 11.9) of the silicon substrate, the quarter-wavelength resonator of the interdigital BPF can be reduced. In comparison to the 5th order interdigital BPF at $f_0$ = 5.5 GHz, the lumped element design is 24% smaller in volume and has 17 and 7 dB better attenuation characteristics at $f_0{\pm}0.75$ GHz.

• 전기학회논문지P
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• 제59권4호
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• pp.417-422
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• 2010

Atmosphere Plasma of Gas Discharge (APGD) has been used in plasma sources for material processing such as etching, deposition, surface modification and so on due to having no thermal damages. The APGD researches on AC source with high frequency have been mainly processed. However, DC APGD studies have been not. In order to understand APGD further, it is necessary to study on fundamental properties of DC APGD. In this paper, we developed a one-dimensional fluid simulation model with capacitively coupled plasma chamber at the atmosphere pressure (760 [Torr]). Nine kinds of Ar discharge particles such as electron (e), positive ions ($Ar^+$, $Ar_2^+$) and neutral particles ($Ar_m^*$, $Ar_r^*$, $Ar_h^*$, $Ar_2^*$(1), $Ar_2^*$(3) and Ar gas) are considered in the computation. The simulation was worked at the current range of 1~15 [mA]. The characteristics of voltage-current were calculated and the structure of Joule heating were discussed. The spatial distributions of Ar DC APGD and the mechanism of power consumption were also investigated.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1347-1348
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• 2007

In this paper, ITO gate electrode surface was modified using $O_2$ plasma and organic gate insulating layers were deposited on the ITO surface using plasma polymerization technique. In order to investigate the influence of the plasma coupling method and plasma conditions on the plasma polymerized methyl methacrylate (ppMMA) thin film properties, inductively coupled (ICP) and capacitively coupled plasma (CCP) were used to generate the plasma and the plasma parameters were varied. The ppMMAs were investigated using atomic force microscopy (AFM) and a Fourier Transform Infrared (FT-IR) spectroscopy. Dielectric constants of the ppMMA thin films were investigated using a impedance analyzer (HP4192A, LF Impedance Analyzer). Current-Voltage (I-V) characteristics of the organic thin film transistors (OTFTs) were investigated using a source measurement unit (SMU: Keithley 2612). Proposed method can be applied to dry-process to fabricate OTFTs during overall fabricating steps.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.408-411
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure, discharge power and doping amounts of Al on the electrical, optical and morphological properties were investigated experimentally. The effect of bias voltage on the electrical properties of ZnO thin film were also studied. Films with lowest resistivity of $5.4{\times}10^{-4}\;{\Omega}-cm$ have been achieved in case of films deposited at 1mtorr, $400^{\circ}C$ with a substrate bias of +10V for 840nm in film thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.939-942
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• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors were Prepared by using the capacitively coupled RF magnetron sputtering method. In this paper the effect of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The results show that the structural and electrical properties of the film are highly affected by the variation of RF discharge power. The optimum growth conditions were obtained for films doped with 2 wt% of $Al_2O_3$ and 200 W in RF discharge power, which exhibit a resistivity of $10.4{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 89.66 % for 1000nm in films thickness in the wavelength range of the visible spectrum.

• 지질공학
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• 제34권2호
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• pp.295-315
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• 2024

최근 도심지의 발달과 전기비저항 탐사 적용 분야 및 현장의 확대에 따라, 포장된 지표에서 토양이나 지하 구조를 조사하기 위한 탐사의 필요성이 증가하고 있다. 과거에는 포장된 표면에서의 탐사는 포장재를 천공하거나 그 주변의 토양에서의 탐사로 대체하였다. 최근 포장재를 손상하지 않고 포장된 지표에서 탐사하는 방법 및 연구 사례들이 늘어남에 따라, 이 논문에서는 이에 대해 분석하고자 한다. 포장 지표에서의 전기비저항 탐사 방법을 기존의 천공 후 전극 삽입 방법, 평판 접지 전극 사용을 포함한 갈바닉 방법과 용량성 결합 방식으로 나누어 각 방법의 적용 사례를 조사하였다. 이를 통해 각 탐사 방법의 장단점과 탐사 현장의 특성을 고려하여 적절한 탐사 방법을 선택할 수 있음을 시사하였다. 마지막으로, 전기비 저항 탐사의 적용 가능성과 한계를 다양한 사례를 통해 분석하였습니다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• 한국전자파학회논문지
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• 제23권3호
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• pp.314-319
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• 2012

본 논문에서는 MICS(Medical Implant Communication Service, 402~405 MHz)와 ISM(The Industrial, Scientific and Medical, 2.40~2.48 GHz) 대역에서 동작하는 인체 통신 중계용 안테나를 제안하고, 인체의 영향을 고려한 안테나 성능에 대한 분석을 하였다. 제안된 안테나는 loop 안테나와 영차 공진 안테나로 구성되어 있다. Loop 안테나는 ISM 대역에서 동작하며, MICS 대역에서의 동작은 loop 안테나와 영차 공진기의 용량성 결합에 의해 요구 성능을 만족할 수 있도록 구현하였다. 근거리장에 인체가 존재할 때 인체가 안테나에 미치는 영향을 분석하기 위하여 인체 팬텀을 이용하여 시뮬레이션과 측정을 하였다. 시뮬레이션 및 측정 결과, 제안된 안테나는 MICS와 ISM 대역에서 대역폭을 만족하였고, 측정된 이득값은 MICS 대역에서 -28.53 dBi, ISM 대역에서 3.85 dBi였다. 또한, 설계된 안테나의 이중 대역 특성은 인체 내 외부 간의 통신 중계 용도로 적절하다고 사료된다.