• Title/Summary/Keyword: Capacitive switching

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A study on circuit design of synthetictest facilities of capacitive current switching tests (합성 진상전류 개폐 시험설비의 회로설계에 관한 연구)

  • Kim, M.H.;Suh, Y.T.;Yoon, H.D.;Shin, Y.J.;Kang, Y.S.;Koh, H.S.
    • Proceedings of the KIEE Conference
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    • 2002.07a
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    • pp.38-40
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    • 2002
  • A study on the test method and the test facilities of synthetic capacitive current tests have been very slight and the direct test method with the short-circuit generator and power transformer only used up to now. However, according to the development of analysis technique of power system and design and manufacture technique we are realized that direct testing method is not satisfactory to evaluate the performance of circuit-breaker because it is difficult to simulate precisely the conditions of power system. Therefore, in order to solve these problem this paper deals with the tests methods and the design technique of the tests facilities of the synthetic capacitive current based on the same theory with the synthetic short-circuit tests.

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A 40fJ/c-s 1 V 10 bit SAR ADC with Dual Sampling Capacitive DAC Topology

  • Kim, Bin-Hee;Yan, Long;Yoo, Jerald;Yoo, Hoi-Jun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.1
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    • pp.23-32
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    • 2011
  • A 40 fJ/c-s, 1 V, 10-bit SAR ADC is presented for energy constrained wearable body sensor network application. The proposed 10-bit dual sampling capacitive DAC topology reduces switching energy by 62% compared with 10-bit conventional SAR ADC. Also, it is more robust to capacitor mismatch than the conventional architecture due to its cancelling effect of each capacitive DAC. The proposed SAR ADC is fabricated in 0.18 ${\mu}m$ 1P6M CMOS technology and occupies 1.17 $mm^2$ including pads. It dissipates only 1.1 ${\mu}W$ with 1 V supply voltage while operating at 100 kS/s.

Loss Analyses of Soft Switching Techniques for Two-transistor Forward Converter (Two-transistor 포워드 컨버터에서 소프트 스위칭 기법의 손실 분석)

  • 김만고
    • The Transactions of the Korean Institute of Power Electronics
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    • v.6 no.5
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    • pp.453-459
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    • 2001
  • In this paper, the loss analyses of two soft switching techniques for two-transistor forward converter are performed. The sums of snubber conduction and capacitive turn-on losses for two transistors are calculated to compare the losses of the two techniques. While the conventional soft switching technique shows the loss difference between two transistors, the proposed soft switching technique shows equal as well as lower losses In two transistors. Thus, it can be said that even thermal distribution and higher reliability can be obtained by the proposed soft switching technique.

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A Novel Soft-Switching PWM DC/DC Converter with DC Rail Series Switch-Parallel Capacitor Edge Resonant Snubber Assisted by High-Frequency Transformer Parasitic Components

  • Fathy, Khairy;Lee, Hyun-Woo;Nakaoka, Mutsuo
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2005.11a
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    • pp.377-382
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    • 2005
  • This paper presents two new circuit topologies of DC bus lineside active edge resonant snubber assisted soft-switching PWM full-bridge DC-DC converter acceptable for either utility AC 200V-rms or AC 400V-rms input voltage source. One topology of proposed DC-DC converters is composed of a typical voltage source-fed full-bridge high frequency PWM inverter using DC busline side series power semiconductor switching devices with the aid of a parallel capacitive lossless snubber. All the active power switches in the full-bridge arms and DC busline can achieve ZCS turn-on and ZVS turn-off commutations and the total turn-off switching power losses of all active switches can be reduced for high-frequency switching action. It is proved that the more the switching frequency of full-bridge soft switching inverter increases, the more soft-switching PWM DC-DC converter with a hish frequency transformer link has remarkable advantages for its efficiency and power density as compared with the conventional hard-switching PWM inverter type DC-DC converter

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A Method to Monitor Vacuum Degree Using Capacitive Partial Discharge Coupler

  • Sun, Jong-Ho;Youn, Young-Woo;Hwang, Don-Ha;Yi, Sang-Hwa;Kang, Dong-Sik
    • Journal of Electrical Engineering and Technology
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    • v.7 no.6
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    • pp.959-964
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    • 2012
  • Internal pressure of vacuum interrupter (VI) is one of the most important parameters in VI operation and may increase due to the outgassing from the materials inside VI or gas permeation through metal flange or ceramic vessel. The increase of the pressure above a certain level leads to the failures of switching or insulation. Therefore, an effective pressure check of VI is essential and an analysis of partial discharge (PD) characteristics is an effective monitoring method to identify the degree of the internal pressure of VI. This paper introduces a research work on monitoring the internal pressure of VI by analyzing PDs which were measured using a capacitive PD coupler. The authors have developed cost effective capacitive coupler based on the ceramic material that has an excellent insulation properties and the main component of the capacitive coupler is made by SrTiO3. Detectable internal pressure range and distinguishability of the internal pressure of VI were investigated. From the PD tests results, the internal pressure range, from $10^{-2}$ torr to 500 torr, can be monitored by PD measurements using the capacitive coupler and PD inception voltage (PDIV) follows the Paschen's law. In addition, rise time of PD pulse at 13.2kV decreases with the increase of the internal pressure of VI.

Resistive Switching Characteristics of TiO2 Films with -Embedded Co Ultra Thin Layer

  • Do, Young-Ho;Kwak, June-Sik;Hong, Jin-Pyo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.1
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    • pp.80-84
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    • 2008
  • We systematically investigated the resistive switching properties of thin $TiO_2$ films on Pt/Ti/$SiO_2$/Si substrates that were embedded with a Co ultra thin layer. An in-situ sputtering technique was used to grow both films without breaking the chamber vacuum. A stable bipolar switching in the current-voltage curve was clearly observed in $TiO_2$ films with an embedded Co ultra thin layer, addressing the high and low resistive state under a bias voltage sweep. We propose that the underlying origin involved in the bipolar switching may be attributed to the interface redox reaction between the Co and $TiO_2$ layers. The improved reproducible switching properties of our novel structures under forward and reverse bias stresses demonstrated the possibility of future non-volatile memory elements in a simple capacitive-like structure.

Two Switches Balanced Buck Converter for Common-Mode Noise Reduction

  • Kanjanasopa, Warong;Prempraneerach, Yothin
    • 제어로봇시스템학회:학술대회논문집
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    • 2004.08a
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    • pp.493-498
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    • 2004
  • The EMI noise source in a switching mode power supply is dominated by a common mode noise. If we can understand the common mode noise occurring mechanism, it is resulted to find out the method to suppress the EMI noise source in the switching mode power supply. The common mode noise is occurring mostly due to circuit is unbalanced which is caused by the capacitive coupling to frame ground, which passes through a heatsink of the switching devices. This research paper presents a new effective balancing method of buck converter circuit by mean of grounding the parasitic and compensation capacitors in correct proportion which is called that the common mode impedance balance (CMIB). The CMIB can be achieved by source, transmission line and termination balanced, such balancing, the common mode current will be cancelled out in the frame ground. The greatly reduced common mode noise can be confirmed by the experimental results.

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A Cascaded Multilevel Inverter Using Bidirectional H-bridge Modules

  • Kang, Feel-Soon;Joung, Yeun-Ho
    • Journal of international Conference on Electrical Machines and Systems
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    • v.1 no.4
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    • pp.448-456
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    • 2012
  • This paper presents a multilevel inverter configuration which is designed by insertion of a bidirectional switch between capacitive voltage sources and a conventional H-bridge module. The modified inverter can produce a better sinusoidal waveform by increasing the number of output voltage levels. By serial connection of two modified H-bridge modules, it is possible to produce 9 output voltage levels including zero. There are 24 basic switching patterns with the 9 output voltage levels. Among the patterns, we select the 2 most efficient switching patterns to get a lower switching loss and minimum dv/dt stress. We then analyze characteristics of Total Harmonic Distortion (THD) of the output voltage with variation of input voltage by computer-aided simulations and experiments.

Dual Mode Phase-Shifted ZVS-PWM Series Load Resonant High-Frequency Inverter for Induction Heating Super Heated Steamer

  • Hisayuki Sugimura;Hidekazu Muraoka;Tarek Ahmed;Srawouth Chandhaket;Eiji Hiraki;Mutsuo Nakaoka;Lee, Hyun-Woo
    • Journal of Power Electronics
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    • v.4 no.3
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    • pp.138-151
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    • 2004
  • In this paper, a constant frequency phase shifting PWM-controlled voltage source full bridge-type series load resonant high-frequency inverter using the $4^{th}$ generation IGBT power modules is presented for innovative consumer electromagnetic induction heating applications, such as a hot water producer, steamer and super heated steamer. The bridge arm side link passive capacitive snubbers in parallel with each power semiconductor device and AC load side linked active edge inductive snubber-assisted series load resonant tank soft switching inverter with a constant frequency phase shifted PWM control scheme is evaluated and discussed on the basis of the simulation and experimental results. It is proved from a practical point of view that the series load resonant and edge resonant hybrid high-frequency inverter topology, what is called, DE class type, including the variable-power variable-frequency regulation function can expand zero voltage soft switching commutation area even under low output power setting ranges, which is more suitable and acceptable for newly developed induction heated dual pack fluid heaters. Furthermore, even the lower output power regulation mode of this high-frequency load resonant tank inverter circuit is verified so that this inverter can achieve ZVS with the aid of the single auxiliary inductor snubber.

Multi-Gbit/s Digital I/O Interface Based on RF-Modulation and Capacitive Coupling

  • Shin, Hyunchol
    • Journal of electromagnetic engineering and science
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    • v.4 no.2
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    • pp.56-62
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    • 2004
  • We present a multi-Gbit/s digital I/O interface based on RF-modulation and capacitive-coupling over an impedance matched transmission line. The RF-interconnect(RFI) can greatly reduce the digital switching noise and eliminate the dc power dissipation over the channel. It also enables reduced signal amplitude(as low as 200 ㎷) with enhanced data rate and affordable circuit overhead. This paper addresses the system advantages and implementation issues of RFI. A prototype on-chip RFI transceiver is implemented in 0.18-${\mu}{\textrm}{m}$ CMOS. It demonstrates a maximum data rate of 2.2 Gbit/s via 10.5-㎓ RF-modulation. The RFI can be very instrumental for future high-speed inter- and intra-ULSI data links.