• Bulletin of the Korean Chemical Society
• /
• v.23 no.5
• /
• pp.741-744
• /
• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• Corrosion Science and Technology
• /
• v.2 no.1
• /
• pp.7-11
• /
• 2003

Photoelectrochemical response and electrochemical impedance behavior was investigated for passive film formed on sputter-deposited Cr alloy in $0.1kmol{\cdot}m^{-3}$. Photoelectrochemical action spectrum could be separated into two components, which were considered to be derived from $Cr_2O_3$ ($E_g\sim3.6eV$) and $ Cr(OH)_3 $ ($E_g\sim2.5eV$). The band gap energy, $E_g$, of each component was almost constant for various applied potentials. polarization periods and alloying additives. The photoelectrochemical response showed negative photo current for most potentials in the passive region. Therefore, the photo current apparently exhibited p-typesemiconductor behavior. On the other hand, Mort-Schottky plot of the capacitance showed positive slope, which means that passive film formed on Cr alloy has n-type semiconductor property. These apparently conflicting results are rationally explained assuming that the passive film on Cr alloy formed in the acid solution has n-type semiconductor property with a fairly deep donor level in the band gap and forms an accumulation layer in the most of potential region in the passive state.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.43 no.4 s.310
• /
• pp.45-52
• /
• 2006

In his paper, we have developed the SMD(surface mounted device) type PECL(positive emitter-coupled logic) VCXO of the $5{\times}7mm$ size for gratifying the requested specifications and the multilayer ceramic SMD(surface mounted device) package technology. The VCXO wired with the PECL(positive emitter coupled logic) package take place a stray inductance and a parasitic capacitance by the length and the inner pattern of the VCXO and the amplitude attenuation and signal loss due to the reflection of power source and the noise component. We have developed the Zig system to analyze the precise spectrum and evaluate the performance. The basic operating voltage is the 3.3 V and have the frequency range of 120MHz-180MHz. The Q factor is over 5K and it has the low jitter characteristics of 3.5 ps and low phase noise.

• Proceedings of the KIEE Conference
• /
• 2005.11a
• /
• pp.197-200
• /
• 2005

As Plasma Immersion ion Implantation (PIII) using a conducting grid is very useful to reduce the effect of capacitance and charging in surface modification. If the bias voltage applied to the conducting grid is in the range of hundreds of volts, the effects of surface charge and space charge substantially affect the incident ion energy and ion current to the surface. In this paper, through an 1d and a 2d PIC simulation the time varying formation of the space charge and surface charge is analyzed. Experiment with the optimally designed grid on the basis of the simulation results is conducted, and the results of both cases with grid and without grid are compared. In our work with Poly Urethane(PU), the improvement of adhesion is yielded by increasing surface roughness and decreasing Si component of PU.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.61 no.1
• /
• pp.41-46
• /
• 2012

Electrolytic power capacitors have been widely used in power conversion system such as inverter or UPS because of characteristics of large capacitance, high-voltage and low-cost. The electrolytic capacitor, which is most of the time affected by the aging effect, plays a very important role for the power-electronics system quality and reliability. Therefore it is important to diagnosis monitoring the condition of an electrolytic capacitor in real-time to predict the failure. In this paper, the on-line remote diagnosis monitoring system for UPS DC link electrolytic capacitors using low-cost single-chip zigbee communication modules is developed. To estimate the health status of the capacitor, the equivalent series resistor(ESR) of the component has to be determined. The capacitor ESR is estimated by using RMS computation using BPF modeling of DC link ripple voltage/current. Zigbee-based hardware experimental results show that the proposed remote capacitor diagnosis monitoring system can be applied to UPS successfully.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.16 no.7
• /
• pp.1391-1396
• /
• 2012

It is introduced an approach to model for numerical analysis of a sound absorbing material that has different absorbing coefficient according to frequency. For modeling of a sound absorbing material, we tried to model by a traditional modeling method. But it had large differences on frequency domain, especially a capacitance component due to increasing of frequency. We approach to model a sound absorbing material by the Debye polarization technique with non-linear least square method. At first, we estimated parameters form a polyurethane with thickness 25 mm, then we could model a polyurethane with thickness 50 mm using same parameters. Therefor, we could find that the Debye polarization is an useful way to model sound absorbing materials.

• Journal of Advanced Marine Engineering and Technology
• /
• v.31 no.8
• /
• pp.975-982
• /
• 2007

The single-phase switched reluctance motor(SRM) drive requires DC source which is generally supplied through a rectifier connected with a commercial source. The rectifier is consist of a diode full bridge and a filter circuit. Usually the filter circuit uses capacitor with large value capacitance to reduce ripple component of DC power. Although the peak torque ripple of SRM is small, the short charge and discharge current of the filter capacitor draws the low power factor and system efficiency. A modified single phase SRM drive system is presented in this paper, which includes drive circuit realizing reduction of torque ripple and improvement of power factor. In the proposed drive circuit, one switching part and diode which can separate the output of AC/DC rectifier from the filter capacitor is added. Also, a upper switch of drive circuit is exchanged a diode in order to reduce power switching device. Therefore the number of power switch device is not changed, two diodes are only added in the SRM drive. To verify the proposed system, some simulation and experimental results are presented.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.22 no.4
• /
• pp.369-372
• /
• 2017

This paper presents a control scheme for three-level NPC inverters using small DC-link capacitors. To reduce the inverter system volume, the film capacitor with small capacitance is a promising candidate for the DC-link. When small capacitors are applied in a three level inverter, however, the AC ripple component increases in the DC-link NPV (neutral point voltage). In addition, the three-phase input grid currents are distorted when the DC-link capacitors are fed by diode rectifier. In this paper, the additional circuit is applied to compensate for small capacitor systems defect, and the offset voltage injection method is presented for the stabilization in NPV. These two proposed processes evidently ensure the quality improvement of the input grid currents and output load currents. The feasibility of the proposed method is verified by experimental results.

• Proceedings of the KOSOMBE Conference
• /
• v.1997 no.11
• /
• pp.471-474
• /
• 1997

Recently, many studies have shown clinically the detection of proximal arterial stenosis through evaluation of a Doppler waveform alternation, the so-called pulsus tardus and parvus, that often occurs distal to the stenosis. However the cause of the tardus-parvus phenomenon remains obscure. To analyze its cause, we modeled the blood-flow circuit as simple electrical circuit. This shows that pulsus tardus-parvus effect is caused as a result of high-frequency waveform component attenuation from low-pass filtering by capacitance(complience of the poststenotic vessel wall) and resistance(stenosis). As a result, the degree of pulsus tardus-parvus increased as the complience of the poststenotic segment of vessel increased, as well as increasing stenosis.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.9
• /
• pp.1463-1466
• /
• 2007

Single phases of multi-component oxides films, ZrTiO4 and Ta2Zr6O17, could be synthesized by using the combinatorial approach through surface sol-gel route, coating the appropriate mole ratio of 100 mM zirconium butoxide, tantalum butoxide and titanium butoxide precursors on Pt/Ti/SiO2/Si (100) substrate, following pyrolysis at 450 oC, and annealing them at 770 oC. Both the films and bulks of ZrTiO4 and Ta2Zr6O17 showed very stable dielectric properties in temperature range, ?140 to 60 oC, and frequency range, 100 Hz to 1 MHz, promising their applications in wide range of temperatures and frequencies. The dielectric constants of the films were lower and a little more dependent on frequency than those of the bulks. The reduction of dielectric property in the film was mainly due to the interfacial effects that worked as series and parallel-connected capacitances toward the substantial film capacitance.