• Title/Summary/Keyword: Capacitance Diagram

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A Study on Low-Current-Operation of 850nm Oxide VCSELs Using a Large-Signal Circuit Model (대신호 등가회로 모델을 이용한 850nm Oxide VCSEL의 저전류 동작 특성 연구)

  • Jang, Min-Woo;Kim, Sang-Bae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.10 s.352
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    • pp.10-21
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    • 2006
  • We have studied the characteristics of oxide VCSELS when their off-current and on-current are kept small in order to find out the possibility of low current operation. A large signal equivalent circuit model has been used. By comparing measured data and simulation results, the parameters of the large signal models are obtained including the capacitances. Using the large signal model, we have investigated the effects of capacitance and on/off currents upon the turn-on/turn-off characteristics and eye diagram. According to the experiment and simulation, the depletion capacitance, which has been neglected, is found to have significant influence on the him-on delay and eye-diagram. Therefore, for high speed and low current operation, the reduction of the depletion capacitance is essential.

Electro-Optical characteristics with dielectric thickness of AC-PDP

  • Jung, K.B.;Choi, J.H.;Kim, S.B.;Jung, Y.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.768-770
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    • 2003
  • In AC PDP, since charges generated by gas discharge are accumulated on the dielectric. The dielectric is a major factor to determine cell capacitance and its memory effect is a play an important role in PDP driving. In this experiment, we have investigated the electro-optical characteristics with dielectric thickness and we have analyzed wall charge and wall voltage by Q-V energy diagram. The dielectric thickness was varied from 20 um to 50 um. As results, according to the dielectric thickness increase,cell capacitance and power consumption is reduced.

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A Study on the Equivalent Model of an External Electrode Fluorescent Lamp Based on Equivalent Resistance and Capacitance Variation

  • Cho, Kyu-Min;Oh, Won-Sik;Moon, Gun-Woo;Park, Mun-Soo;Lee, Sang-Gil
    • Journal of Power Electronics
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    • v.7 no.1
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    • pp.38-43
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    • 2007
  • An External Electrode Fluorescent Lamp (EEFL) has longer lifespan, higher power efficiency and higher luminance than a Cold Cathode Fluorescent Lamp (CCFL). Moreover, it is easy to drive them in parallel. Therefore, the EEFL is expected to quickly replace the CCFL in LCD backlight systems. However, the EEFL has more complex characteristics than the CCFL with a resistive component, because it has both a resistive component by plasma and a capacitive component by external electrode. In this paper, values of resistance and capacitance are measured at several power levels and at several operating frequencies. They are expressed by a numeral formula based on a linear approximation that represents the equivalent resistance and capacitance as a function of power. Then we made block diagram of the equivalent circuit model using numerical expressions. Simulation waveforms and experimental results are presented to verify the feasibility of the equivalent model.

Analysis on How to Locate the Maximum Line Voltage to Hull in Steady State on the Vector Diagram Onboard Vessels

  • Choi, Soon-Man
    • Journal of Advanced Marine Engineering and Technology
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    • v.35 no.7
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    • pp.966-973
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    • 2011
  • Power distribution onboard vessel is typically configured as ungrounded system due to the ability to continuously supply electric power even when an earth fault occurs. The impedance connections between 3 phase power lines and hull cause the line-to-hull voltages to become unstable and increased in case the impedances are unbalanced, bringing the situation susceptible to electric shock and deterioration of insulation material. Also the line-to-hull voltage can reach to a certain maximum value in the steady state depending on the distributed capacitances and grounding resistances between lines and hull. This study suggests how to find and calculate the maximum line-to-hull voltage in view of magnitude and phase angle based on the vector diagram.

A Method of Low Power VLSI Design using Modified Binary Dicision Diagram (MBDD를 이용한 저전력 VLSI설계기법)

  • Yun, Gyeong-Yong;Jeong, Deok-Jin
    • The Transactions of the Korean Institute of Electrical Engineers D
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    • v.49 no.6
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    • pp.316-321
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    • 2000
  • In this paper, we proposed MBDD(Modified Binary Decision Diagram) as a multi-level logic synthesis method and a vertex of MBDD to NMOS transistors matching. A vertex in MBDD is matched to a set of NMOS transistors. MBDD structure can be achieved through transformation steps from BDD structure. MBDD can represent the same function with less vertices less number of NMOS transistors, consequently capacitance of the circuit can be reduced. Thus the power dissipation can be reduced. We applied MBDD to a full odder and a 4-2compressor. Comparing the 4-2compressor block with other synthesis logic, 31.2% reduction and 19.9% reduction was achieved in numbers of transistors and power dissipation respectively. In this simulation we used 0.8 ${\mu}{\textrm}{m}$ fabrication parameters.

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Dielectric relaxation properties in the lead scandium niobate

  • Yeon Jung Kim
    • Journal of the Korean institute of surface engineering
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    • v.56 no.4
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    • pp.227-232
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    • 2023
  • In this study, complex admittance as a function of temperature and frequency was measured to analyze the important relaxation properties of lead scandium niobate, which is physically important, although it is not an environmentally friendly electrical and electronic material, including lead. Lead scandium niobate was synthesized by heat treating the solid oxide, and the conductance, susceptance and capacitance were measured as a function of temperature and frequency from the temperature dependence of the RLC circuit. The relaxation characteristics of lead scandium niobate were found to be affected by contributions such as grain size, grain boundary characteristics, space charge, and dipole arrangement. As the temperature rises, the maximum admittance and susceptance increase in one direction, but the resonance frequency decreases below the transition temperature but increases after the phase transition.

Analysis of Inverter Circuit with External Electrode Fluorescent Lamps for LCD Backlight (LCD 백라이트용 외부전극 형광램프의 인버터 회로 해석)

  • Jeong, Jong-Mun;Shin, Myeong-Ju;Lee, Mi-Ran;Kim, Ga-Eul;Kim, Jung-Hyun;Kim, Sang-Jin;Lee, Min-Kyu;Kang, Mi-Jo;Shin, Sang-Cho;Ahn, Sang-Hyun;Gill, Do-Hyun;Yoo, Dong-Gun;Koo, Je-Huan
    • Journal of the Korean Vacuum Society
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    • v.15 no.6
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    • pp.587-593
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    • 2006
  • The circuit of the EEFL system and the inverter has been analyzed into the resistance RL, the capacitance C of the EEFL-backlight system, and the inductance of transformer in the inverter. The lamp resistance and capacitance are deter-mined from the phase difference is between the lamp current and voltage and from the Q-V diagram, respectively. The single Lamp of EEFL for 32' LCD-BLU has the resistance of $66\;k\Omega$ and the capacitance of 21.61 pF. The resistance, which is connected by parallel in the 20-EEFLS BLU, is $3.3\;k\Omega$ and the capacitance is 402.1 pF. The matching frequency in the operation of lamp system is noted as $\omega_M=1/\sqrt{L_2C(1-k^2)}$, where $L_2$ is the inductance of secondary coil and k is the coupling coefficient between primary and secondary coil. The lamp current and voltage has maximum value at the matching frequency in the LCD BLU system. The results of analytic solutions are in good agreement with the experimental results.

Nano-Scale Cu Direct Bonding Technology Using Ultra-High Density, Fine Size Cu Nano-Pillar (CNP) for Exascale 2.5D/3D Integrated System

  • Lee, Kang-Wook
    • Journal of the Microelectronics and Packaging Society
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    • v.23 no.4
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    • pp.69-77
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    • 2016
  • We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial energy at relatively lower temperature and pressure compared to conventional micro-scale Cu direct bonding. We confirmed for the first time that 4.3 million electrodes per die are successfully connected in series with the joining yield of 100%. The joining resistance of CNP bundle with $80{\mu}m$ height is around 30 m for each pair of $10{\mu}m$ dia. electrode. Capacitance value of CNP bundle with $3{\mu}m$ length and $80{\mu}m$ height is around 0.6fF. Eye-diagram pattern shows no degradation even at 10Gbps data rate after the lamination of anisotropic conductive film.