• 제목/요약/키워드: CaMV

검색결과 181건 처리시간 0.03초

방사선치료 선량 측정에 사용되는 열형광체에 따른 최대 형광 강도 특성 (Characteristics of the Maximum Glow Intensity According to the Thermoluminescent Phosphors used in the Absorbed Dose Measurement of the Radiation Therapy)

  • 강수만;임인철;박철우;이미현;이재승
    • 한국방사선학회논문지
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    • 제8권4호
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    • pp.181-187
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    • 2014
  • 본 연구는 방사선 치료 영역의 선량 측정을 위하여 상용화된 열형광선량계의 가열 온도에 따른 형광 곡선의 특성을 분석하였다. 본 연구에 사용된 열형광선량계는 LiF:Mg${\cdot}$Ti, LiF:Mg${\cdot}$Cu${\cdot}$P, $CaF_2$:Dy, $CaF_2$:Mn(Thermo Fisher Scientific Inc., USA)이었다. 선원과 고체 팬텀 표면(RW3 slab, IBA Dosimetry, Germany)간 거리를 100cm로 하여 기준점 깊이에서 6MV, 15MV X선과 6MeV, 12MeV 전자선을 각각 100MU 조사하였다. 방사선 조사 후 열형광 판독기(Hashaw 3500, Thermo Fisher Scientific Inc., USA)를 사용하여 $50^{\circ}C$에서 $260^{\circ}C$까지 $15^{\circ}C/sec$의 가온율로 가열하여 형광 곡선을 분석하였다. 트랩 준위에 포획된 전자가 정공과 결합하면서 빛을 방출하는 형광 피크(glow peak)는 2개 또는 3개의 피크가 나타났으며 방사선 조사 후 TLD의 온도를 일정하게 증가시켰을 때 최대 형광 피크를 나타내는 형광 온도의 경우 각각의 에너지에 따라 $LiF:Mg{\cdot}Ti$ 선량계는 $185.5{\pm}1.3^{\circ}C$, $LiF:Mg{\cdot}Ti$ 선량계는 $135.0{\pm}5.1^{\circ}C$, $CaF_2$:Dy 선량계는 $144.0{\pm}1.6^{\circ}C$, $CaF_2$:Mn 선량계는 $294.3{\pm}3.8^{\circ}C$ 근처에서 최대 형광 피크를 각각 나타났다. 방사선 조사 후 포획 전자의 형광 방출 확률은 가열 온도에 의존하게 되므로 방사선 치료 영역의 선량 측정에서 방사선 조사 후 열형광선량계에 일정한 가온율을 적용함으로써 고유한 물리적 특성에 따른 측정 정확도를 향상시킬 수 있을 것으로 판단되었다.

Isolation and Characterization of Pathogen-Inducible Putative Zinc Finger DNA Binding Protein from Hot Pepper Capsicum annuum L.

  • Oh, Sang-Keun;Park, Jeong-Mee;Jung, Young-Hee;Lee, Sanghyeob;Kim, Soo-Yong;Eunsook Chung;Yi, So-Young;Kim, Young-Cheol;Seung, Eun-Soo
    • 한국식물병리학회:학술대회논문집
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    • 한국식물병리학회 2003년도 정기총회 및 추계학술발표회
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    • pp.79.2-80
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    • 2003
  • To better understand plant defense responses against pathogen attack, we identified the transcription factor-encoding genes in the hot pepper Capsicum annuum that show altered expression patterns during the hypersensitive response raised by challenge with bacterial pathogens. One of these genes, Ca1244, was characterized further. This gene encodes a plant-specific Type IIIA - zinc finger protein that contains two Cys$_2$His$_2$zinc fingers. Ca1244 expression is rapidly and specifically induced when pepper plants are challenged with bacterial pathogens to which they are resistant. In contrast, challenge with a pathogen to which the plants are susceptible only generates weak Ca1244 expression. Ca1244 expression is also strongly induced in pepper leaves by the exogenous application of ethephon, an ethylene releasing compound. Whereas, salicylic acid and methyl jasmonate had moderate effects. Pepper protoplasts expressing a Ca1244-smGFP fusion protein showed Ca1244 localizes in the nucleus. Transgenic tobacco plants overexpressing Ca1244 driven by the CaMV 355 promoter show increased resistance to challenge with a tobacco-specific bacterial pathogen. These plants also showed constitutive upregulation of the expression of multiple defense-related genes. These observations provide the first evidence that an Type IIIA - zinc finger protein, Ca1244, plays a crucial role in the activation of the pathogen defense response in plants.

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$CaF_2$ 박막의 전기적, 구조적 특성 (Eelctrical and Structural Properties of $CaF_2$Films)

  • 김도영;최석원;이준신
    • 한국전기전자재료학회논문지
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    • 제11권12호
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    • pp.1122-1127
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    • 1998
  • Group II-AF_2$films such as $CaF_2$, $SrF_2$, and $BaF_2$ have been commonly used many practical applications such as silicon on insulatro(SOI), three-dimensional integrated circuits, buffer layers, and gate dielectrics in filed effect transistor. This paper presents electrical and structural properties of fluoride films as a gate dielectric layer. Conventional gate dielectric materials of TFTs like oxide group exhibited problems on high interface trap charge density($D_it$), and interface state incorporation with O-H bond created by mobile hydrogen and oxygen atoms. To overcome such problems in conventional gate insulators, we have investigated $CaF_2$ films on Si substrates. Fluoride films were deposited using a high vacuum evaporation method on the Si and glass substrate. $CaF_2$ films were preferentially grown in (200) plane direction at room temperature. We were able to achieve a minimum lattice mismatch of 0.74% between Si and $CaF_2$ films. Average roughness of $CaF_2$ films was decreased from 54.1 ${\AA}$ to 8.40 ${\AA}$ as temperature increased form RT and $300^{\circ}C$. Well fabricated MIM device showed breakdown electric field of 1.27 MV/cm and low leakage current of $10^{-10}$ A/$cm^2$. Interface trap charge density between $CaF_2$ film and Si substrate was as low as $1.8{\times}10^{11}cm^{-2}eV^{-1}$.

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게이트 절연막 응용을 위한 Ca $F_2$ 박막연구 (The study of Ca $F_2$ films for gate insulator application)

  • 김도영;최유신;최석원;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.239-242
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    • 1998
  • Ca $F_2$ films have superior gate insulator properties than conventional gate insulator such as $SiO_2$, Si $N_{x}$, $SiO_{x}$, and T $a_2$ $O_{5}$ to the side of lattice mismatch between Si substrate and interface trap charge density( $D_{it}$). Therefore, this material is enable to apply Thin Film Transistor(TFT) gate insulator. Most of gate oxide film have exhibited problems on high trap charge density, interface state in corporation with O-H bond created by mobile hydrogen and oxygen atom. This paper performed Ca $F_2$ property evaluation as MIM, MIS device fabrication. Ca $F_2$ films were deposited at the various substrate temperature using a thermal evaporation. Ca $F_2$ films was grown as polycrystalline film and showed grain size variation as a function of substrate temperature and RTA post-annealing treatment. C-V, I-V results exhibit almost low $D_{it}$(1.8$\times$10$^{11}$ $cm^{-1}$ /le $V^{-1}$ ) and higher $E_{br}$ (>0.87MV/cm) than reported that formerly. Structural analysis indicate that low $D_{it}$ and high $E_{br}$ were caused by low lattice mismatch(6%) and crystal growth direction. Ca $F_2$ as a gate insulator of TFT are presented in this paper paperaper

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CaSki 세포주에서 성장 상태에 따른 X-선에 의한 c-jun의 발현 (Expression of c-jun by X-ray According to Cell Growth State in CaSki Cell Line)

  • 장성순;박우윤
    • Radiation Oncology Journal
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    • 제17권3호
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    • pp.223-229
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    • 1999
  • 목적 : 세포의 성장 상태 즉, 지수적 증식기와 평형기 세포에서 방사선에 의한 c-jun의 발현 양상의 차이를 파악하고, 방사선조사 후 세포주기 분포를 분석하여 이들의 상관 관계를 알아보고자 하였다. 대상 및 방법 : 사람 자궁경부암 세포주인 CaSki를 대상으로 날자 경과에 따른 세포성장곡선을 작성하여 지수적 증식기(제 4일)와 평형기(제 9일) 세포를 정하였다. 방사선조사는 6 MV 선형가속기를 이용해 2 Gy의 선량을 조사하였고, 이때 선량률은 3 Gy/min 이었다. 지수적 증식기와 평형기 세포 각각에 방사선조사 후 시간 경과에 따라 total RNA를 추출하여 northern blot analysis를 시행해 c-jun의 발현 양상을 관찰하였다. 또 방사선조사 후 시간 경과에 따라 세포를 얻어 유세포계측법을 이용해 세포주기 분포를 분석하였다. 결과 : 방사선조사 1 시간 후에 지수적 증식기와 평형기 세포 모두에서 최대의 발현이 관찰되었다. 그러나 이후 6시간까지 지수적 증식기 세포에서는 지속적으로 발현이 증가한 반면, 평형기에서는 점차 발현이 감소되는 양상을 보였다. 방사선에 의한 세포주기의 변화는 지수적 증식기에서 시간 경과에 따라 G0-G1에서 S, G2-M 기로의 이동이 더 활발히 일어났다. 결론 : c-jun 은 방사선조사 후 성장상태에 따른 세포 증식의 조절과 관련 있을 것이다.

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Characteristics of fluoride/glass as a seed layer for microcrystalline silicon film growth

  • Choi, Seok-Won;Kim, Do-Young;Ahn, Byeong-Jae;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.65-66
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    • 2000
  • Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for crystalline Si film growth. The XRD analysis on $CaF_2/glass$ illustrated (220) preferential orientation and showed lattice mismatch less than 5 % with Si. We achieved a fluoride film with breakdown electric field of 1.27 MV/cm, leakage current density about $10^{-6}$ $A/cm^2$, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon $({\mu}c-Si)$ film growth by using a $CaF_2/glass$ substrate. The ${\mu}c-Si$ films exhibited crystallization in (111) and (220) planes, grain size of $700\;{\AA}$, crystalline volume fraction over 65 %, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than $4{\times}10^{-7}$ S/cm.

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Presence of Transgenic Genes and Proteins in Commercial Soybean Foods from Mexican Grocery Stores

  • Cruz-Flores, Yendi Arely;Rodriguez-Herrera, Raul;Aguilar-Gonzalez, Cristobal Noe;Contreras-Esquivel, Juan Carlos;Reyes-Vega, Maria de la Luz
    • Food Science and Biotechnology
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    • 제17권5호
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    • pp.1092-1096
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    • 2008
  • Commercial food products from major cities of Coahuila, Mexico were screened to identify residues of transgenic deoxyribonucleic acid (DNA) and/or proteins. After performed, an inventory on all products that contained a soybean-based ingredient in a commercial grocery store in the city of Saltillo, Coahuila, Mexico, 245 food products were identified and grouped in 15 classes according to the soybean ingredient as well as the manufacturing process used for their elaboration. Similar sampling was made for the different food classes in the cities of Monclova, Piedras Negras, and Torreon. A total of 88 samples were analyzed and DNA was extracted by the hexadecyltrimethyl-ammonium bromide (CTAB) technique with slight modification to obtain better DNA quality (1). In addition, segments of the transgenic genes one that codifies for 5-enolpyruvylshikimate-3-phosphate synthase (epsps), cry 1A, and the cauliflower mosaic virus (CaMV) promoter were amplified using polymerase chain reaction (PCR). The transgenic proteins 5-enolpyruvylshikimate-3-phosphate synthase (CP4 EPSPS) and insecticidal crystal protein (Cry 1Ab/Ac) were identified using double antibody sandwich-enzymatic linked immunoassay analysis (DAS-ELISA). Presence of transgenic genes and/or proteins was identified in 35.3% of the commercial products samples.

Overproduction of 5-enolpyruvylshikimate-3-phosphate synthase (EPSPS) confers resistance to the herbicide glyphosate in transgenic rice

  • Lee, Soo-In;Kim, Hyun-Uk;Shin, Dong-Jin;Kim, Jin-A;Hong, Joon-Ki;Kim, Young-Mi;Lee, Yeon-Hee;Koo, Bon-Sung;Kwon, Sun-Jong;Suh, Seok-Chul
    • Journal of Plant Biotechnology
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    • 제38권4호
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    • pp.272-277
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    • 2011
  • Plants expressing Agrobacterium sp. strain CP4 5-enolpyruvylshikimate-3-phosphate synthase (CP4 EPSPS) are known to be resistant to glyphosate, a potent herbicide that inhibits the activity of the endogenous plant EPSPS. In order to develop herbicide-resistant rice, we prepared transgenic rice plants with CP4 EPSPS gene under the control of CaMV 35S promoter for over-expression. A recombinant plasmid was transformed into rice via Agrobacterium-mediated transformation. A large number of transgenic rice plants were obtained with glyphosate and most of the transformants showed fertile. The integration and expression of CP4 EPSPS gene from regenerated plants was analyzed by Southern and northern blot analysis. The transgenic rice plants had CP4 EPSPS enzyme activity levels more than 15-fold higher than the wild-type plants. EPSPS enzyme activity of transgenic rice plants was also identified by strip-test method. Field trial of transgenic rice plants further confirmed that they can be selectively survived at 100% by spay of glyphosate (Roundup$^{(R)}$) at a regular dose used for conventional rice weed control.

Application of Biological Accelorator Mass Spectrometry by 6 MV in KIST

  • 이기수;이경희;조혜미;이관호;김재열;유병용
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.146.2-146.2
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    • 2014
  • KIST 6MV 가속기는 이온빔 분석 그리고 가속기 질량 분석법(Accelerator mass spectrometry)으로 활용된다. 이온빔 분석으로는 RBS, TOF ERD, PIXE. ${\mu}$-Probe을 할 수 있으며 AMS(Accelerator mass spectrometry)는 액체섬광측정법(LSC)과 비교할때 민감도는 1,000배 정도로 3H, 14C, 26Al,41Ca 을 10-21 ~ 10-18 mole/mg 까지 검출 가능하여. 응용분야로는 BAMS(Biological AMS), 전통과학, 지구과학, 환경과학에 활용되고 있다. 이중 AMS의 생-의학분야(BAMS)의 응용은 최근 매우 중요하게 연구되고 있다. BAMS의 활용 연구에 사용하는 핵종으로는 주로 3H, 14C, 41Ca, 36Cl를 사용하며, 14C 화합물은 쉽게 구할 수 있고, 자연방사선 이하의 낮은 14C labeled drug 사용하기 때문에 1948년 이후 생물학 연구에 혁신적으로 활용되고 있다. 주 활용분야로는 (1) 신약개발은 임상실험 전(Phase 0) 이용되며, 14C로 표지된 bio-molecule을 자연수준의 방사선 농도에서 추적자로 사용하여 질량을 측정하는 방법을 활용. (2) 의과학분야는 인체 내에서의 추적자 연구수행 (3) 항암제 연구는 암조직 중 약물농도와 암효과의 상관성을 연구 (4) 바이오 기술 분야에서는 생약 유효물질의 체내 대사연구 등을 할 수 있어 전세계적으로 활발히 연구가 진행되고 있다. KIST에서는 6MV가속기를 BAMS 연구에 활용하기 위하여 전처리 단계의 Combustion, Gas transfer, Reduction 등을 자체 제작하여 테스트 중에 있으며, BAMS 샘플의 Gas는 호기중의 성분, 대기 성분이 있으며, Liquid는 혈액(혈장,혈청,적혈구), Solid는 DNA, 세포, 장기 뼈, 피부, 식물조직, 사료, Drug 및 그 대사 류가 있다. AMS 측정 결과는 14C/12C 비율로 나타나며 그 결과를 농도로 환산하여 분석하게 된다. 또한 분석 데이터 신뢰를 확보하기 위하여 표준시료 및 품질관리용 시료를 사용하여 BAMS분석법에 대한 검증을 실시하였다.

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The epigenetic phenotypes in transgenic Nicotiana benthamiana for CaMV 35S-GFP are mediated by spontaneous transgene silencing

  • Sohn, Seong-Han;Choi, Min-Sue;Kim, Kook-Hyung;Lomonossoff, George
    • Plant Biotechnology Reports
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    • 제5권3호
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    • pp.273-281
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    • 2011
  • Diverse epigenetic phenotypes are frequently found during research on transgenic plants. To understand the factors underlying such diversity, hundreds of independent 35S-GFP transgenic N. benthamiana plants were analyzed. The diverse GFP-expression phenotypes of the transgenic plants were classified into three major types based on the GFP expression patterns and their response to 35S-GFP agroinfiltration: steady-green, silenced and non-uniform phenotype. The non-uniform phenotype was further sub-divided into five minor phenotypes: variegated, red-dropped, on-silencing, partitioned and misty, according to the distribution of GFP expression on the leaves. Many of transgenic plants continuously generated diverse phenotypes over several generations despite the transgene identity. Such epigenetic GFP phenotyping was found to be the result of spontaneous transgene silencing mediated by either or both of post-transcriptional gene silencing (PTGS) and transcriptional gene silencing (TGS). This finding was verified by the detection of 21- and 24-nt small interfering RNA (siRNA) molecules, and DNA methylation in the transgenic plants that showed repeated epigenetic variation. Agroinfiltration demonstrated that irregular distribution of GFP on a leaf was the result of erratic transgene silencing, and the technique also proved to be a rapid and effective method for selecting fully silenced plants within 3 days. Furthermore, two novel phenotypes described are potential materials for in-depth investigations into the genes and mechanisms responsible for spontaneous transgene silencing.