• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.426.2-426.2
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• 2016

Numerous of researches are being conducted to improve the efficiency of $Cu_2ZnSnSe_4$ (CZTSe)-based photovoltaic devices, which is one of the most promising candidates for low cost and environment-friendly solar cells. In this work, we concentrate on the back contact of the devices. A proper thickness of $MoSe_2$ in back contact structure is believed to enhance adhesion and ohmic contact between Mo back contact and absorber layer. Nevertheless, too thick $MoSe_2$ layers that are grown during high-temperature selenization process can impede the current collection, thus resulting in low cell performance. By applying molybdenum nitride as a barrier in back contact structure, we were able to control the thickness of $MoSe_2$ layer, which resulted in lower series resistance and higher fill factor of CZTSe devices. The phase transformation of Mo-N binary system was systematically studied by changing $N_2$ concentration during the sputtering process. With a proper phase of Mo-N fabricated by using an adequate partial pressure of $N_2$, the efficiency of CZTSe solar cells as high as 8.31% was achieved while the average efficiency was improved by about 2% with respect to that of the referent cells where no barrier layer was employed.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.85-87
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• 2009

Despite the success of $Cu(In,Ga)Se_2$ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. one candidate to replace CIGS is $Cu_2ZnSnSe_4$ (CZTSe), fabricated by co-evaporation technique. Effects of substrate temperature of $Cu_2ZnSnSe_4$ absorber layer on the performance of thin films solar cells were investigated. As substrate temperature increased, the grain size of $Cu_2ZnSnSe_4$ films increased presumably. At a optimal condition of substrate temperature is $320^{\circ}C$, the solar cell shows a conversion efficiency of 1.79% with $V_{OC}$ of 0.213V, JSC of $16.91mA/cm^2$ and FF of 49.7%.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.86.1-86.1
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• 2010

Cu2ZnSnSe4는 CIS 태양전지의 In 대체 물질계로 주목을 받고 있는 저가형 태양전지 재료로 장차 차세대 태양전지 재료로 응용이 기대되고 있다. 그러나 에너지 밴드갭이 0.9~1.1eV로 다소 낮아 태양전지 광흡수층 재료로 사용하기 위해서는 wide band gab화 처리가 필요하다. 본 연구에서는 CZTSe에 S를 첨가하여 에너지 밴드갭을 확장하고자 하며, S의 첨가가 CZTSe 박막의 특성에 미치는 영향에 대하여 조사하였다. 실험의 편의성을 도모하고자 펄스레이저 법을 사용하여 증착하였다. 박막 조성 제어에는 Cu, Zn, Sn, Se, S 분말을 볼밀로 분쇄, 혼합하여 균질 혼합상 프리커서를 제조하고 이를 Cold Isostatic Press(CIP) 성형하여 Source target을 사용하였다. Pulsed YAG-Laser를 사용하여 soda lime glass상에 증착하고 조성, 구조, 조직을 관찰하고 에너지 밴드갭, 광흡수계수, 면저항, 전하밀도 등 특성을 조사하였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.400-400
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• 2009

Despite the success of Cu(In,Ga)$Se_2$ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. One candidate to replace CIGS is $Cu_2ZnSnSe_4$ (CZTSe), fabricated by co-evaporation technique. Co-evaporation technique will be one of the best methods to control film composition. This type of absorber derives from the $CuInSe^2$ chalcopyrite structure by substituting half of the indium atoms with zinc and other half with tin. Energy bandgap of this material has been reported to range from 0.8eV for selenide to 1.5eV for the sulfide and large coefficient in the order of $10^{14}cm^{-1}$, which means large possibility of commercial production of the most suitable absorber by using the CZTSe film. In this work, Effects of substrate temperature of $Cu_2ZnSnSe_4$ absorber layer on the performance of thin films solar cells were investigated. We reported on some of the absorber properties and device results.

• 한국분말재료학회지
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• 제18권3호
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• pp.256-261
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• 2011

In order to make a $Cu_2ZnSnSe_4$ (CZTSe) sputtering target sintered for solar cell application, synthesis of CZTSe compound by solid state reaction of Cu, Zn, Sn and Se mixed powders and effects of ball milling condition on sinterability such as ball size, combination of ball size, ball milling time and sintering temperature, was investigated. As a result of this research, sintering at $500^{\circ}C$ after ball milling using mixed balls of 1 mm and 3 mm for 72 hours was the optimum condition to synthesis near stoichiometric composition of $Cu_2ZnSnSe_4$ and to prepare sintered pellet with high density relatively.

• Current Photovoltaic Research
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• 제3권3호
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• pp.97-100
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• 2015

The kesterite $Cu_2ZnSnSe_4$ (CZTSe) thin film solar cells were synthesized by selenization of sputtered Cu/Sn/Zn metallic precursors on Mo coated soda lime glass substrate in Ar atmosphere. Cu/Sn/Zn metallic precursors were deposited by DC magnetron sputtering process with 30 W power at room temperature. As-deposited metallic precursors were placed in a graphite box with Se pellets and selenized using rapid thermal processing furnace at various temperature ($480^{\circ}C{\sim}560^{\circ}C$) without using a toxic $H_2Se$ gas. Effects of Selenization temperature on the morphological, crystallinity, electrical properties and cell efficiency were investigated by field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD), J-V measurement system and solar simulator. Further details about effects of selenization temperature on CZTSe thin films will be discussed.

• 한국재료학회지
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• 제23권3호
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• pp.183-189
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• 2013

$Cu_2ZnSn(S,Se)_4$ material is receiving an increased amount of attention for solar cell applications as an absorber layer because it consists of inexpensive and abundant materials (Zn and Sn) instead of the expensive and rare materials (In and Ga) in $Cu(In,Ga)Se_2$ solar cells. We were able to achieve a cell conversion efficiency to 4.7% by the selenization of a stacked metal precursor with the Cu/(Zn + Sn)/Mo/glass structure. However, the selenization of the metal precursor results in large voids at the absorber/Mo interface because metals diffuse out through the top CZTSe layer. To avoid the voids at the absorber/Mo interface, binary selenide compounds of ZnSe and $SnSe_2$ were employed as a precursor instead of Zn and Sn metals. It was found that the precursor with Cu/$SnSe_2$/ZnSe stack provided a uniform film with larger grains compared to that with $Cu_2Se/SnSe_2$/ZnSe stack. Also, voids were not observed at the $Cu_2ZnSnSe_4$/Mo interface. A severe loss of Sn was observed after a high-temperature annealing process, suggesting that selenization in this case should be performed in a closed system with a uniform temperature in a $SnSe_2$ environment. However, in the experiments, Cu top-layer stack had more of an effect on reducing Sn loss compared to $Cu_2Se$ top-layer stack.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.444.1-444.1
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• 2014

높은 광흡수 계수를 갖는 Cu(In,Ga)Se2(CIGS) 화합물 박막 소재는 고효율 태양전지 양산을 위해 가장 전도유망한 재료이나 상대적으로 매장량이 적은 In 및 Ga을 사용한다는 소재적 한계가 있다. Cu2ZnSnSe4(CZTSe) 혹은 Cu2ZnSnS4(CZTS)와 같은 Cu-Zn-Sn-Se계 화합물 반도체는 CIGS 내 희소원소인 In과 Ga이 범용원소인 Zn 및 Sn으로 대체된 소재로써 미래형 저가 태양전지 개발을 위해 활발히 연구되고 있는데, 그 화합물 조합에 따라 0.8eV부터 1.5eV까지의 에너지 밴드갭을 갖는 것으로 알려져 있다. 본 연구에서는 열분해법으로 CZTS 나노 입자를 합성하였다. 용매로 Oleylamine을 사용하였는데, $220^{\circ}C{\sim}340^{\circ}C$의 온도 범위에서 3시간 30분 동안 CZTS 나노입자를 합성하였고, $240^{\circ}C$에서 3시간~5시간까지 합성하였다. 헥산을 이용하여 원심분리기와 초음파세척기로 용매인 Oleylamine을 제거하였고, 진공오븐에서 건조된 CZTS 분말의 FE-SEM(Field Emission Scanning Electron Microscope), XRD(X-Ray Diffraction), EDS(Energy Dispersive Spectroscopy) 분석 등을 통해 합성온도에 따른 구조적, 화학적 조성 변화를 조사하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.321.1-321.1
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• 2013

높은 광흡수 계수를 갖는 Cu(In,Ga)Se2(CIGS) 화합물 박막 소재는 고효율 태양전지 양산을 위해 가장 전도유망한 재료이나 상대적으로 매장량이 적은 In 및 Ga을 사용한다는 소재적 한계가 있다. Cu2ZnSnSe4(CZTSe) 혹은 Cu2ZnSnS4(CZTS)와 같은 Cu-Zn-Sn-Se계 화합물 반도체는 CIGS 내 희소원소인 In과 Ga이 범용원소인 Zn 및 Sn으로 대체된 소재로써 미래형 저가 태양전지 개발을 위해 활발히 연구되고 있는데, 그 화합물 조합에 따라 0.8eV부터 1.5eV까지의 에너지 밴드갭을 갖는 것으로 알려져 있다. 본 연구에서는 열분해법으로 CZTS 나노 입자를 합성하였다. 용매로 Oleylamine을 사용하였는데, $260{\sim}340^{\circ}C$의 온도 범위에서 5시간 30분 동안 CZTS 나노입자를 합성하였고, $300^{\circ}C$에서 5시간 30분~9시간까지 합성하였다. 헥산을 이용하여 원심분리기와 초음파세척기로 용매인 Oleylamine을 제거하였고, 진공오븐에서 건조된 CZTS 분말의 FE-SEM (Field Emission Scanning Electron Microscope), XRD (X-Ray Diffraction), EDS (Energy Dispersive Spectroscopy) 분석 등을 통해 합성온도에 따른 구조적, 화학적 조성 변화를 조사하였다.