• Nano
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• 제13권11호
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• pp.1850126.1-1850126.10
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• 2018

Flexible strain sensors, as the core member of the family of smart electronic devices, along with reasonable sensing range and sensitivity plus low cost, have rose a huge consumer market and also immense interests in fundamental studies and technological applications, especially in the field of biomimetic robots movement detection and human health condition monitoring. In this paper, we propose a new flexible strain sensor based on thick CVD graphene film and its low-cost fabrication strategy by using the commercial adhesive tape as flexible substrate. The tensile tests in a strain range of ~30% were implemented, and a gage factor of 30 was achieved under high strain condition. The optical microscopic observation with different strains showed the evolution of cracks in graphene film. Together with commonly used platelet overlap theory and percolation network theory for sensor resistance modeling, we established an overlap destructive resistance model to analyze the sensing mechanism of our devices, which fitted the experimental data very well. The finding of difference of fitting parameters in small and large strain ranges revealed the multiple stage feature of graphene crack evolution. The resistance fallback phenomenon due to the viscoelasticity of flexible substrate was analyzed. Our flexible strain sensor with low cost and simple fabrication process exhibits great potential for commercial applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.382-382
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• 2011

이차원 결정인 그래핀(graphene)은 전하도핑(charge doping)과 기계적 변형에 민감하기 때문에 기판의 물리 및 화학적 구조 및 특성에 따라 그래핀의 물성이 크게 영향을 받는다고 알려져 있다. 특히 널리 사용되고 있는 산화실리콘($SiO_2$/Si) 기판에 존재하는 나노미터 크기의 굴곡과 전하 트랩(charge trap)은 전하 이동도 및 화학적 안정성 등의 면에서 그래핀 고유의 뛰어난 물성을 제한하는 것으로 알려져 있다. 본 연구에서는 비정질 산화실리콘 기판을 대조군으로 삼아 편평도가 높은 결정성 h-BN (hexagonal boron nitride) 기판이 그래핀에 미치는 영향을 관찰하였다. 화학기상증착법(chemical vapor deposition 또는 CVD)으로 성장시킨 그래핀을 각 기판에 전사시킨 후 라만 분광법을 통해 전하 도핑 및 기계적 변형 정도를 측정하였다. h-BN 위에서는 외부 환경에서 기인하는 전하 도핑 정도가 산화실리콘 기판보다 적게 관찰되었다. 또한 h-BN 위에 고착된 그래핀 시료에서는 기판-그래핀 상호작용에서 기인하는 것으로 보이는 새로운 라만 분광 특성이 관찰되었다.

• 진공이야기
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• 제3권1호
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• pp.22-31
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• 2016

Although graphene has been considered as one of the promise materials for future logic devices due to extremely high mobility, its applications in electronics have been limited to a few cases such as a flexible interconnect, and RF devices. Furthermore, most of the studies on graphene devices reported unstable operations, claimed to be due to the poor quality of graphene. Nevertheless, recent studies showed that the electrical performance of graphene field effect transistor could be stabilized even with CVD graphene when well-established integration processes to control the interface of graphene were used. These results indicate that as in the case of silicon devices, a proper control of graphene interface is very important for the stable operation of graphene device as well as other 2D material based devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.644-644
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• 2013

Graphene is a two-dimensional sp2 layer material. Despite the short history in the empirical synthesis of the graphene layers, the academic/industrial unique features have brought highly significant interest in research and development related to graphene-related materials. In particular, the electrical and optical performances have been targeted towards pre-existing microelectronicand emerging nanoelectronic applications. The graphene synthesis relies on a variety of processing factors, such as temperature, pressure, and gas ratios involving H2, CH4, and Ar, in addition to the inherent selection of copper substrates. The current work places its emphasis on the role of experimental factors in growing graphene thin films. The thermally-grown graphene layers are characterized using physical/chemical analyses, i.e., four point resistance measurements, Raman spectroscopy, and UV-Visible spectrophotometry. Ultimately, an optimization strategy is proposed in growing high-quality graphene layers well-controlled through empirical factors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.114-114
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• 2011

Graphene is the hottest topic in condensed-matter physics due to its unusual electronic structures such as Dirac cones and massless linear dispersions. Graphene can be epitaxially grown on various metal surfaces with chemical vapor deposition (CVD) processes. Such epitaxial graphene shows modified electronic structures caused by substrates. In the method for removal of the effect of substrate, there are bi, tri-layer graphene, gold intercalation, and oxygen intercalation. Here, We will present the changes of geometric and electronic structure of graphene grown on Ru(0001) by oxygen intercalation between graphene and Ru(0001). Using Scanning tunneling microscopy (STM) and spectroscopy (STS), we observed the aspect that the band gap features near the fermi level of graphene on Ru(0001) system is shifted and narrow. Based on the observed results, two effects by intercalated oxygen were considered.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.188-188
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• 2012

Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ${\sim}60{\Omega}$/sq and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. In this study, we report a creative strategy, irradiation of microwave at room temperature under vacuum, for obtaining size-homogeneous gold nano-particle doping on graphene. The gold nano-particlization promoted by microwave irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping. These results clearly revealed that gold nanoparticle with ${\geq}30$ nm in mean size were decorated along the surface of the graphene after microwave irradiation. The fabrication high-performance transparent conducting film with optimized doping condition showed a sheet resistance of ${\geq}100{\Omega}$/sq. at ~90% transmittance. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

• 한국전자통신학회논문지
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• 제8권4호
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• pp.549-554
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• 2013

CVD를 이용하여 Cu 시편에 그래핀의 합성을 보이고, Cu 시편의 grain 크기와 방향성에 따른 그래핀의 성장거동을 보이고자 한다. 동일한 온도 및 압력 하에서도 사용하는 분위기 가스의 종류에 따라서 Cu의 확산에 영향을 주게 되고, 그래핀 합성 시 사용되는 $H_2$와 $CH_4$ 가스 분위기 하에서 Cu grain의 성장에도 영향을 미치는 것을 알 수 있었으며, 결과적으로 Cu grain의 성장이 그래핀의 합성과 성장에 직접적인 관련이 있음을 보이고자 하였다. 부식 저항성은 상온에서 동전위 분극실험를 통하여 분석하였으며, 부식속도 비교에서 그래핀 코팅된 Cu 시편의 경우가 그래핀의 화학적 안정성에 기인하여 순수 Cu 시편의 경우보다 동일한 부식 환경에서 약 10배 정도 안정적인 것으로 관찰이 되었다. 또한, grain boundary를 포함, 결함이 없는 그래핀의 균일한 성장의 가능성을 보이고, 이의 합성을 통한 공학적인 활용이 그 최종적인 목적이 될 것이다.

• 한국전자통신학회논문지
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• 제9권2호
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• pp.167-171
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• 2014

CVD를 이용하여 다결정 및 단결정 Cu 시편에 대한 그래핀의 합성 실험을 수행하였으며, 광학현미경 조직사진과 이미지 분석을 통하여 그래핀의 성장거동과 합성에 대한 특성평가 결과를 제시 하였다. 다결정 Cu 시편의 결정성에 따른 그래핀의 성장에 대한 분석의 결과 그래핀의 성장이 다결정 Cu 시편의 결정에 따라 일정한 방향성을 갖고 성장한다는 것을 알 수 있었으며, 다결정 Cu 시편의 이웃하는 단일 결정 내에서 성장하는 그래핀 형성에 대한 이미지 분석의 결과 단층, 복층, 그리고 3층의 그래핀에 대한 특성 분석이 가능하였다. 또한, (111) 방향을 갖는 단결정 Cu 시편을 이용하여 약 $3mm^2$ 정도의 비교적 넓은 면적을 갖는 고품질의 단일층 단결정 그래핀 합성과 이에 대한 특성평가 결과를 나타내고 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.165-165
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• 2014

In this study, we demonstrated that the soft lithographic patterning processing of chemical vapor deposition (CVD) graphene and rGO sheets as large scale, low cost, high quality and simplicity for future industrial applications. Recently, a previous study has reported that single layer graphene grown via CVD was patterned and transferred to a target surface by controlling the surface energy of the polydimethylsiloxane (PDMS) stamp [1]. Using this approach, the surface of a relief-patterned elastomeric stamp was functionalized with hydrophilic dimethylsulfoxide (DMSO) molecules to enhance the surface energy of the stamp and to remove the graphene-based layer from the initial substrate and transfer it to a target surface [2]. Further, we developed a soft lithographic patterning process via surface energy modification for advanced graphene-based flexible devices such as transistors or simple and efficient chemical sensor consisting of reduced graphene oxide (rGO) and a metallic nanoparticle composite. A flexible graphene-based device on a biocompatible silk fibroin substrate, which is attachable to an arbitrary target surface, was also successfully fabricated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.119-119
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• 2011

This study examined the synthesis of large area graphene and the change of its characteristics depending on the ratio of CH4/H2 by using the thermal CVD methods and performed the experiments to control the electron-hole conduction and Dirac-point of graphene by using chemical doping methods. Firstly, with regard to the characteristics of the large area graphene depending on the ratio of CH4/H2, hydrophobic characteristics of the graphene changed to hydrophilic characteristics as the ratio of CH4/H2 reduces. The angle of contact also increased to 78$^{\circ}$ from 58$^{\circ}$. According to the results of Raman spectroscopy showing the degree of defect, the ratio of I(D)/I(G) increases to 0.42% from 0.25% and the surface resistance also increased to 950 ${\Omega}$ from 750 ${\Omega}$/sq. As for the graphene synthesis at the high temperature of 1,000$^{\circ}$ by using CH4/H2 in a Cu-Foil, the possibility of graphene formation was determined as a function of the ratio of H2 included in the fixed quantity of CH4 as per specifications of every equipment. It was observed that the excessive amount of H2 prevented graphene from forming, as extra H-atoms and molecules activated the reaction to C-bond of graphene. Secondly, in the experiment for the electron-hole conduction and the Dirac-point of graphene using the chemical doping method, the shift of Dirac-point and the change in the electron-hole conduction were observed for both the N-type (PEI) and the P-type (Diazonium) dopings. The ID-VG results show that, for the N-type (PEI) doped graphene, Dirac-point shifted to the left (-voltage direction) by 90V at an hour and by 130 V at 2 hours respectively, compared to the pristine graphene. Carrier mobility was also reduced by 1,600 cm2/Vs (1 hour) and 1,100 cm2/Vs (2 hours), compared to the maximum hole mobility of the pristine graphene.